Silicon Junction FETs (Small Signal)
1
Publication date: March 2004 SJF00001CED
2SJ0163 (2SJ163)
Silicon P-channel junction FET
For switching circuits
Complementary to 2SK1103
■Features
•Low ON resistance
•Low-noise characteristics
■Absolute Maximum Ratings Ta = 25°C
1: Source
2: Drain
3: Gate
EIAJ: SC-59 Mini3-G1 Package
Unit: mm
Parameter Symbol Rating Unit
Gate-drain surrender voltage VGDS 65 V
Drain current ID−20 mA
Gate current IG−10 mA
Power dissipation PD150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Gate-drain surrender voltage VGDS IG = 10 µA, VDS = 065 V
Drain-source cutoff current *IDSS VDS = −10 V, VGS = 0 − 0.6 −6.0 mA
Gate-source cutoff current IGSS VGS = 30 V, VDS = 010nA
Gate-source cutoff voltage VGSC VDS = −10 V, ID = −10 µA 1.5 3.5 V
Forward transfer admittance YfsVDS = −10 V, ID = −1 mA, f = 1 kHz 1.8 2.5 mS
Drain-source ON resistance RDS(on) VDS = −10 mV, VGS = 0 300 Ω
Short-circuit forward transfer capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz 12 pF
(Common source)
Reverse transfer capacitance Crss 4pF
(Common source)
■Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3. *: Rank classification
Rank P Q R
IDSS (mA) − 0.6 to −1.5 −1.0 to −3.0 −2.5 to −6.0
Note) The part number in the parenthesis shows conventional part number.
Marking Symbol: 4M
0.40+0.10
–0.05
(0.65) 1.50+0.25
–0.05
2.8+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90+0.20
–0.05
0.16+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1 1.1+0.2
–0.1
1.1+0.3
–0.1
2SJ0163
2SJF00001CED
Yfs VGS Yfs IDCiss , Coss , Crss VDS
PD TaID VDS ID VGS
0 16040 12080
0
200
150
50
100
Ambient temperature Ta (°C)
Power dissipation P
D
(mW)
0−12−10−8−2−6−4
0
−4.0
−3.0
−1.0
−2.0
Ta = 25°C
VGS = 0 V
0.2 V
0.4 V
0.6 V
0.8 V
Drain-source voltage VDS (V)
Drain current I
D
(mA)
054132
0
3.0
2.5
2.0
1.5
1.0
0.5
VDS = −10 V
Gate-source voltage VGS (V)
Drain current I
D
(mA)
2.0 01.5 0.51.0
0
4.0
3.0
1.0
2.0
VDS = −10 V
f = 1 kHz
Ta = 25°C
Gate-source voltage VGS (V)
Forward transfer admittance |Y
fs
| (mS)
0−12−10−8−2−6−4
0
16
12
4
8
VDS = −10 V
f = 1 kHz
Ta = 25°C
Drain current ID (mA)
Forward transfer admittance |Y
fs
| (mS)
11010
2
0
24
20
16
12
8
4
f = 1 MHz
V
GS
= 0
T
a
= 25°C
C
iss
C
oss
C
rss
Drain-source voltage VDS (V)
Short-circuit forward transfer capacitance (Common-source) C
iss
,
Short-circuit output capacitance (Common-source) C
oss
,
Reverse transfer capacitance (Common-source) C
rss
(pF)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
