Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 -0.05 0.16+0.10 -0.06 (0.95) (0.95) 1.90.1 Absolute Maximum Ratings Ta = 25C 2.90+0.20 -0.05 Unit 65 V Drain current ID -20 mA Gate current IG -10 mA Power dissipation PD 150 mW Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C 10 1.1+0.3 -0.1 Rating VGDS 1.1+0.2 -0.1 Symbol 0 to 0.1 Parameter Gate-drain surrender voltage 0.40.2 2 1 (0.65) * Low ON resistance * Low-noise characteristics 5 Features 2.8+0.2 -0.3 1.50+0.25 -0.05 3 EIAJ: SC-59 1: Source 2: Drain 3: Gate Mini3-G1 Package Marking Symbol: 4M Electrical Characteristics Ta = 25C 3C Parameter Symbol Conditions Min Typ Max Unit -6.0 mA 10 nA 3.5 V Gate-drain surrender voltage VGDS IG = 10 A, VDS = 0 Drain-source cutoff current * IDSS VDS = -10 V, VGS = 0 Gate-source cutoff current IGSS VGS = 30 V, VDS = 0 Gate-source cutoff voltage VGSC VDS = -10 V, ID = -10 A Forward transfer admittance Yfs VDS = -10 V, ID = -1 mA, f = 1 kHz 2.5 mS Drain-source ON resistance RDS(on) VDS = -10 mV, VGS = 0 300 VDS = -10 V, VGS = 0, f = 1 MHz 12 pF 4 pF Short-circuit forward transfer capacitance (Common source) Ciss Reverse transfer capacitance (Common source) Crss 65 V - 0.6 1.5 1.8 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Rank classification Rank P Q R IDSS (mA) - 0.6 to -1.5 -1.0 to -3.0 -2.5 to -6.0 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2004 SJF00001CED 1 2SJ0163 PD Ta ID VDS ID VGS -4.0 200 3.0 VDS = -10 V 100 50 -3.0 VGS = 0 V -2.0 0.2 V -1.0 0.4 V 0.6 V Drain current ID (mA) 2.5 150 Drain current ID (mA) Power dissipation PD (mW) Ta = 25C 2.0 1.5 1.0 0.5 0.8 V 0 0 40 80 120 160 0 Ambient temperature Ta (C) -2 Yfs VGS -10 VDS = -10 V f = 1 kHz Ta = 25C 3.0 2.0 1.0 1.0 0.5 0 0 8 4 -2 -4 -6 -8 -10 Drain current ID (mA) SJF00001CED 2 3 4 5 Ciss , Coss , Crss VDS 12 0 1 Gate-source voltage VGS (V) VDS = -10 V f = 1 kHz Ta = 25C 0 1.5 0 -12 Yfs ID Forward transfer admittance |Yfs| (mS) Forward transfer admittance |Yfs| (mS) -8 16 Gate-source voltage VGS (V) 2 -6 Drain-source voltage VDS (V) 4.0 0 2.0 -4 -12 Short-circuit forward transfer capacitance (Common-source) Ciss , Short-circuit output capacitance (Common-source) Coss , Reverse transfer capacitance (Common-source) Crss (pF) 0 24 f = 1 MHz VGS = 0 Ta = 25C 20 16 Ciss 12 8 4 Coss Crss 0 1 10 Drain-source voltage VDS (V) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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