© Semiconductor Components Industries, LLC, 2016
July, 2017 − Rev. 2 1Publication Order Number:
NVMFS6B14NL/D
NVMFS6B14NL
Power MOSFET
100 V, 13 mW, 55 A, Single N−Channel
Features
•Small Footprint (5x6 mm) for Compact Design
•Low RDS(on) to Minimize Conduction Losses
•Low QG and Capacitance to Minimize Driver Losses
•NVMFS6B14NLWF − Wettable Flank Option for Enhanced Optical
Inspection
•AEC−Q101 Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage VDSS 100 V
Gate−to−Source Voltage VGS ±16 V
Continuous Drain Cur-
rent RqJC (Notes 1, 3) Steady
State
TC = 25°CID55 A
TC = 100°C 39
Power Dissipation RqJC
(Note 1) TC = 25°CPD94 W
TC = 100°C 47
Continuous Drain Cur-
rent RqJA (Notes 1, 2, 3
)
Steady
State
TA = 25°CID11 A
TA = 100°C 8.0
Power Dissipation RqJA
(Notes 1 & 2) TA = 25°CPD3.8 W
TA = 100°C 1.9
Pulsed Drain Current TA = 25°C, tp = 10 msIDM 140 A
Operating Junction and Storage Temperature TJ, Tstg −55 to
+ 175 °C
Source Current (Body Diode) IS60 A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 2.0 A) EAS 811 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s) TL260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol Value Unit
Junction−to−Case − Steady State RqJC 1.6 °C/W
Junction−to−Ambient − Steady State (Note 2) RqJA 40
1. The e ntire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING
DIAGRAM
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XXXXXX = 6B14NL
(NVMFS6B14NL) or
6B14LW
(NVMFS6B14NLWF)
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
XXXXXX
AYWZZ
V(BR)DSS RDS(ON) MAX ID MAX
100 V 13 mW @ 10 V
G (4)
S (1,2,3)
N−CHANNEL MOSFET
D (5,6)
S
S
S
G
D
D
D
D
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
1
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
ORDERING INFORMATION
19 mW @ 4.5 V 55 A
NVMFS6B14NL
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2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA100 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient V(BR)DSS/
TJ80 mV/°C
Zero Gate Voltage Drain Current IDSS VGS = 0 V,
VDS = 80 V TJ = 25°C 25 mA
TJ = 125°C 250
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = 16 V 100 nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA1.0 3.0 V
Threshold Temperature Coefficient VGS(TH)/TJ−5.8 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 20 A 10.5 13 mW
VGS = 4.5 V 15.5 19
CHARGES AND CAPACITANCES
Input Capacitance CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
1680
pF
Output Capacitance COSS 580
Reverse Transfer Capacitance CRSS 42
Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 50 V; ID = 25 A 8
nC
VGS = 10 V, VDS = 50 V; ID = 25 A
17
Threshold Gate Charge QG(TH) 2.2
Gate−to−Source Charge QGS 4.1
Gate−to−Drain Charge QGD 2.0
Plateau Voltage VGP 3.3 V
SWITCHING CHARACTERISTICS (Note 5)
T urn−On Delay Time td(ON)
VGS = 4.5 V, VDS = 50 V,
ID = 25 A, RG = 1.0 W
11
ns
Rise Time tr67.6
T urn−Off Delay Time td(OFF) 14.8
Fall Time tf7.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD VGS = 0 V,
IS = 20 A TJ = 25°C 0.83 1.2 V
TJ = 125°C 0.72
Reverse Recovery Time tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 25 A
48
ns
Charge Time ta25
Discharge Time tb23
Reverse Recovery Charge QRR 53 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
NVMFS6B14NL
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3
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V)
3.01.00
0
20
54210
Figure 3. On−Resistance vs. Gate−to−Source
Voltage Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)
610753
6
8
20 30
10
15
30
5
Figure 5. On−Resistance Variation with
Temperature Figure 6. Drain−to−Source Leakage Current
vs. Voltage
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)
15012510075250−25−50
0.8
1.2
50403020100
10K
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
IDSS, LEAKAGE (nA)
4.5 V 4.0 V VDS = 10 V
TJ = 25°C
TJ = 125°CTJ = −55°C
10
ID = 20 A
TJ = 25°C
VGS = 4.5 V
TJ = 25°C
VGS = 10 V
50
ID = 20 A
VGS = 10 V
TJ = 85°C
TJ = 125°C
3
16
1.0
0.4
1.4
22
10
3.8 V
2.0 0
40
20
26
1.8
2.0
40
50
2.5
3.2 V
VGS = 10 V
to 6 V
30
60 60
10050
0.6
100
10
1
0.5 1.5
489
20
20
1.6
TJ = 150°C
1K
100K
3.6 V
3.0 V
3.4 V
25
2.2
30
10
50
908060175
10
12
14
18
24
40 60 80 9070
2.4
70 100
NVMFS6B14NL
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4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total
Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
100
1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current
RG, GATE RESISTANCE (W)VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100101
1
10
100
1000
0.90.80.70.60.40.3
0.01
1
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
t, TIME (ns)
IS, SOURCE CURRENT (A)
VGS = 0 V
TJ = 25°C
f = 1 MHz
Ciss
Coss
Crss
VDS = 50 V
ID = 25 A
VGS = 4.5 V
td(on)
tr
tf
TJ = 125°C
1000
100
0
2
10
08
212
TJ = 25°C
VDS = 50 V
ID = 25 A
10
100
144
6
8
4Qgs Qgd
td(off)
0.5
0.1
100 6 16
10
10 18
1
9
5
7
3
10,000
20 30 40 50 60 70 80 90
1.0
TJ = 25°C TJ = −55°C
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1001010.1
0.01
0.1
1
10
100
1000
ID, DRAIN CURRENT (A)
VGS ≤ 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
500 ms
1 ms
10 ms
Figure 12. IPEAK vs. TAV
TAV, TIME IN AVALANCHE (sec)
0.0010.0001
0.1
10
100
IPEAK, DRAIN CURRENT (A)
0.01
100°C
25°C
1
NVMFS6B14NL
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5
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.001 1010.00010.00001 0.10.000001
0.001
0.01
0.1
1
10
100
R(t) (°C/W)
100 1000
50% Duty Cycle
20%
10%
5%
2%
1%
Single Pulse NVMFS6B14NL, 650 mm2, Cu Single Layer Pad
DEVICE ORDERING INFORMATION
Device Marking Package Shipping†
NVMFS6B14NLT1G 6B14NL DFN5
(Pb−Free) 1500 / Tape & Reel
NVMFS6B14NLWFT1G 614LLW DFN5
(Pb−Free, Wettable Flanks) 1500 / Tape & Reel
NVMFS6B14NLT3G 6B14NL DFN5
(Pb−Free) 5000 / Tape & Reel
NVMFS6B14NLWFT3G 614LLW DFN5
(Pb−Free, Wettable Flanks) 5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFS6B14NL
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6
PACKAGE DIMENSIONS
M3.00 3.40
q0 −−−
_
3.80
12
_
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15
D1 4.70 4.90
D2 3.80 4.00
E6.15
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.575
K1.20 1.35
L0.51 0.575
L1 0.125 REF
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
4.530
1.530
4.5600.495
3.200
1.330
0.965
2X
2X
4X
4X
PIN 5
(EXPOSED PAD)
5.00 5.30
6.00 6.30
PITCH
DIMENSIONS: MILLIMETERS
1
RECOMMENDED
e
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NVMFS6B14NL/D
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