Data Sheet
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10V Drive Nch MOSFET
SP8K80
Structure Dimensions (Unit : mm)
Silicon N-channel MOSFET
Features
1) Built-in G-S protection diode.
2) Small surface mount package(SOP8).
Application
Switching
Packaging specifications Inner circuit
Package Taping
Code TB
Basic ordering unit (pieces) 2500
SP8K80
Absolute maximum ratings (Ta = 25C)
Symbol Limits Unit
Drain-source voltage VDSS 500 V
Gate-source voltage VGSS 30 V
Continuous ID0.5 A
Pulsed IDP 2A
Continuous IS0.5 A
Pulsed ISP 2A
Avalanche current IAS 0.25 A
Avalanche energy EAS 0.017 mJ
Power dissipation PD2W
Channel temperature Tch 0.2 C
Range of storage temperature Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25°C
*3 Limited only by maximum channel temperature allowed.
*4 Mounted on a ceramic board.
Type
Source current
(Body Diode)
Drain current
Parameter
*2
*2
*3
*4
*3
*1
*1
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗2
∗1
∗2
∗1
(8) (7)
(1) (2)
(6) (5)
(3) (4)
1 ESD PROTECTION DIODE
2 BODY DIODE
SOP8
(1)
(8) (5)(7) (6)
(4)(2) (3)
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
1/6 2011.10 - Rev.A
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Data Sheet
SP8K80 　
Electrical characteristics (Ta = 25C)
Symbol Min. Typ. Max. Unit
Gate-source leakage IGSS --10 AV
GS=30V, VDS=0V
Drain-source breakdown voltage V(BR)DSS 500 - - V ID=1mA, VGS=0V
Zero gate voltage drain current IDSS - - 100 AV
DS=500V, VGS=0V
Gate threshold voltage VGS (th) 3.0 - 5.0 V VDS=10V, ID=1mA
Forward transfer admittance l Yfs l 0.1 - - S VDS=10V, ID=0.25A
Input capacitance Ciss - 23.5 - pF VDS=25V
Output capacitance Coss - 36.5 - pF VGS=0V
Reverse transfer capacitance Crss - 2.4 - pF f=1MHz
Turn-on delay time td(on) - 10 - ns VDD 250V, ID=0.25A
Rise time tr- 18 - ns VGS=10V
Turn-off delay time td(off) - 25 - ns RL=1000
Fall time tf- 170 - ns RG=10
Total gate charge Qg- 3.8 - nC VDD 250V
Gate-source charge Qgs - 1.3 - nC ID=0.5A
Gate-drain charge Qgd - 1.6 - nC VGS=10V
*Pulsed
Body diode characteristics (Source-Drain)
Symbol Min. Typ. Max. Unit
Forward voltage VSD - - 1.5 V IS=0.25A, VGS=0V
*Pulsed
9.0 11.7
Parameter Conditions
Conditions
Parameter
Static drain-source on-state
resistance RDS (on) ID=0.25A, VGS=10V
-
*
*
*
*
*
*
*
*
*
*
2/6 2011.10 - Rev.A
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Data Sheet
SP8K80
　
Electrical characteristic curves (Ta=25C)
VGS=4.5V
VGS=5.0V
VGS=10.0V
VGS=6.0V
VGS=7.0V
VGS=8.0V
VGS=6.5V
Ta=25°C
Pulsed
0.0
0.1
0.2
0.3
0.4
0.5
012345678910
Drain Current : ID [A]
Drain-Source Voltage : VDS [V]
Fig.2 Typical Output Characteristics (Ⅱ)
VGS=10.0V
VGS=5.0V
VGS=6.0V
VGS=4.5V
VGS=7.0V
VGS=8.0V
VGS=6.5V
Ta=25°C
Pulsed
V
DS
=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
2
3
4
5
6
-50 0 50 100 150
Gate Threshold Voltage : VGS(th) [V]
Channel Temperature : Tch [℃]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
V
DS
=10V
ID
=1mA
pulsed
V
GS
=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0
5
10
15
20
25
-50 0 50 100 150
Static Drain-Source On-State Resistance : RDS(on) [Ω]
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
V
GS
=10V
pulsed
ID=0.25A
ID=0.50A
3/6 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
SP8K80
　
V
DS
=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.1
1
0 0.5 1 1.5 2
Source Current : IS [A]
Source-Drain Voltage : VSD [V]
Fig.8 Source Current vs. Source-Drain Voltage
V
GS
=0V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
ID=0.5A
ID=0.25A
Ta=25°C
Pulsed
1
10
100
1000
10000
0.01 0.1 1
Switching Time : t [ns]
Drain Current : ID [A]
Fig.10 Switching Characteristics
td(on)
tr
td(off)
tf
V
DD≒
250V
V
GS=10V
R
G=10Ω
T
a=25°C
Pulsed
T
a=25°C
V
DD=250V
ID
=0.5A
Pulsed
0.1
1
10
100
1000
0.01 0.1 1 10 100 1000
Capacitance : C [pF]
Drain-Source Voltage : VDS [V]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
T
a=25°C
f=1MHz
VGS=0V
Ciss
Coss
Crss
4/6 2011.10 - Rev.A
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Data Sheet
SP8K80
　
T
a=25
°
C
Single Pulse:1unit
Mounted on a ceramic board.
(30mm
× 30mm × 0.8mm)
Rth
(ch-a)=89.3°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
T
a=25
°
C
di/dt=50A/
μ
s
V
GS=0V
Pulsed
0.001
0.01
0.1
1
10
0.1 1 10 100 1000
Drain Current : ID [ A ]
Drain-Source Voltage : VDS [ V ]
Fig.14 Maximum Safe Operating Area
Ta=25°C
Single Pulse:1unit
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Operation in this area
is limited by RDS(on)
(VGS = 10V)
PW = 100μs
PW = 1ms
PW = 10ms
DC operation
5/6 2011.10 - Rev.A
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Data Sheet
SP8K80 　
Measurement circuits
F
ig.1-1 Switching Time Measurement Circu
it
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.1-2 Switching Waveforms
90%
90% 90
%
10% 10%
50%
10%
50%
V
GS
Pulse width
V
DS
t
on
t
off
t
r
t
d(on)
t
f
t
d(off)
F
ig.2-1 Gate Charge Measurement Circuit
V
GS
I
G(Const.)
V
D
S
D.U.T.
I
D
R
L
V
DD
Fig.2-2 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Fig.3-1 Avalanche Measurement Circuit
V
GS
R
G
V
DS
D.U.T.
I
AS
L
V
DD
Fig.3-2 Avalanche Waveform
I
AS
VDD
V(BR)DSS
I
AS
2
L
EAS =V(BR)DSS
-
VDD
V(BR)DSS
1
2
6/6 2011.10 - Rev.A
R1120A
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Notes
Datasheet
Part Number sp8k80
Package SOP8
Unit Quantity 2500
Minimum Package Quantity 2500
Packing Type Taping
Constitution Materials List inquiry
RoHS Yes
sp8k80 - Web Page
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