MCC255-16io1
3 1 2
6 57 4
Phase leg
Thyristor Module
Part number
MCC255-16io1
Backside: isolated
TAV
T
V V1.08
RRM
250
1600
=
V=V
I=A
2x
Features / Advantages: Applications: Package:
International standard package
Direct copper bonded Al2O3-ceramic
with copper base plate
Planar passivated chip
Keyed gate/cathode twin pins
Motor control, softstarter
Power converter
Heat and temperature control for
industrial furnaces and chemical
processes
Lighting control
Solid state switches
Y1
Industry standard outline
RoHS compliant
Soldering pins for PCB mounting
Base plate: Copper
internally DCB isolated
Advanced power cycling
Isolation Voltage: V~
3600
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
Disclaimer Notice
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. 20191210fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC255-16io1
V = V
kA²s
kA²s
kA²s
kA²s
Symbol
Definition
Ratings
typ.
max.
I
V
IA
V
T
1.14
R0.14 K/W
min.
250
VV
1T = 25°C
VJ
T = °C
VJ
mA40V = V
T = 25°C
VJ
I = A
T
V
T = °C
C
85
P
tot
820 WT = 25°C
C
300
1600
forward voltage drop
total power dissipation
Conditions
1.36
T = 25°C
VJ
140
V
T0
V0.80T = °C
VJ
140
r
T
0.68 m
V1.08T = °C
VJ
I = A
T
V
300
1.33
I = A600
I = A600
threshold voltage
slope resistance for power loss calculation only
mA
125
VV1600T = 25°C
VJ
IA450
P
GM
Wt = 30 µs 120
max. gate power dissipation
P
T = °C
C
140
Wt = 60
P
P
GAV
W20
average gate power dissipation
C
J
438
junction capacitance
V = V400 T = 25°Cf = 1 MHz
RVJ
pF
I
TSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
140
I²t T = 45°C
value for fusing
T = °C140
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
thJC
thermal resistance junction to case
T = °C
VJ
140
9.20
9.94
305.8
296.7
kA
kA
kA
kA
7.82
8.45
423.2
410.6
1600
500 µs
RMS forward current
T(RMS)
TAV
180° sine
average forward current
(di/dt)
cr
A/µs
100repetitive, I =T
VJ
= 140 °C; f = 50 Hz
critical rate of rise of current
V
GT
gate trigger voltage
V = 6 V T = °C25
(dv/dt) T = 140°C
critical rate of rise of voltage
A/µs500
V/µs
t = µs;
I A; V = V
R = ∞; method 1 (linear voltage rise)
VJ
DVJ
860 A
T
P
G
= 1
di /dt A/µs;
G
=1
DRM
cr
V = V
DRM
GK
1000
2 V
T = °C-40
VJ
I
GT
gate trigger current
V = 6 V T = °C25
DVJ
150 mA
T = °C-40
VJ
3 V
220 mA
V
GD
gate non-trigger voltage
T = °C
VJ
0.25 V
I
GD
gate non-trigger current
10 mA
V = V
D DRM
140
latching current
T = °C
VJ
200 mA
I
L
25t µs
p
= 30
I A;
G
= 0.45 di /dt A/µs
G
= 0.45
holding current
T = °C
VJ
150 mA
I
H
25V = 6 V
D
R =
GK
gate controlled delay time
T = °C
VJ
2 µs
t
gd
25
I A;
G
= 1 di /dt A/µs
G
= 1
V = ½ V
D DRM
turn-off time
T = °C
VJ
200 µs
t
q
di/dt = A/µs10 dv/dt = V/µs50
V =
R
100 V; I A;
T
= 300 V = V
DRM
tµs
p
= 200
non-repet., I = 250 A
T
125
R
thCH
0.04
thermal resistance case to heatsink
K/W
Thyristor
1700
RRM/DRM
RSM/DSM
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
R/D
reverse current, drain current
T
T
R/D
R/D
200
IXYS reserves the right to change limits, conditions and dimensions. 20191210fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC255-16io1
Ratings
Part Number
yywwAA
Date Code
(DC)
Production
Index (PI)
Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.#
(26-31),
blank (32), serial no.# (33-36)
Circuit
Package
T
op
°C
M
D
Nm7
mounting torque
4.5
T
VJ
°C140
virtual junction temperature
-40
Weight g680
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
M
T
Nm13
terminal torque
11
VV
t = 1 second
V
t = 1 minute
isolation voltage
mm
mm
16.0
16.0
d
Spp/App
creepage distance on surface | striking distance through air
d
Spb/Apb
terminal to backside
I
RMS
RMS current
600 A
per terminal
125-40
terminal to terminal
Y1
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering
50/60 Hz, RMS; I 1 mA
ISOL
MCC255-16io1 509190Box 3MCC255-16io1Standard
3600
ISOL
T
stg
°C125
storage temperature
-40
3000
threshold voltage
V0.8
m
V
0 max
R
0 max
slope resistance *
0.5
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Thyristor
°C
* on die level
140
IXYS reserves the right to change limits, conditions and dimensions. 20191210fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC255-16io1
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7)
2.8 x 0.8
10
2
49
45
43
1
2 3
7654
80
92
115
6.2
20 22.5 35 28.5
50
38
5
18
UL 758, style 3751
52
+0
-1,4
32 +0
-1,9
15 ±1
3x M8
3 1 2
6 57 4
Outlines Y1
IXYS reserves the right to change limits, conditions and dimensions. 20191210fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC255-16io1
T
C
[°C]
t [s]
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
011
10
4
10
5
10
6
0 25 50 75 100 125 150
0
100
200
300
400
I
TSM
[A]
I
TAVM
[A]
0 25 50 75 100 125 150
0 100 200 300
0
100
200
300
400
500
0 25 50 75 100 125 1500 200 400 600
0
500
1000
1500
2000
R
thKA
K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Circuit
B6
3xMCD255
3xMCC255 or
180 ° sin
120 °
60°
30°
DC
180 ° sin
120 °
60°
30°
DC
I
2
dt
[A
2
s]
t [ms]
I
TAVM
[A]
P
tot
[W]
T
A
[°C]
P
tot
[W]
I
DAVM
T]A[
A
[°C]
Fig. 1 Surge overload current
I
T(F)SM
: Crest value, t: duration
Fig. 2 I
2
dt versus time Fig. 3 Max. forward current
at case temperature
Fig. 4 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation
vs. direct output current and ambient temperature
T
VJ
= 45°C
R
thKA
K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
6
5
4
3
1
limit
typ.
V
G
[V]
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.1
1
10
0.01 0.1 1 10
1
10
100
2
4: P
GM
= 20 W
5: P
GM
= 60 W
6: P
GM
= 120 W
I
G
[A]
t
gd
[µs]
I
G
[A]
Fig. 5 Surge overload current
I
T(F)SM
: Crest value, t: duration
Fig. 7 Gate trigger delay time
T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
2: I
GT
, T
VJ
= 25°C
1: I
GT
,T
VJ
= 140°C
I
GD
,T
VJ
= 140°C
80 % V
RRM
T
VJ
= 45°C
50 Hz
T
VJ
= 140°C
T
VJ
= 140°C
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191210fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved
MCC255-16io1
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
0.30
P
tot
[W]
0 25 50 75 100 125 1500 100 200 300 400 500
0
500
1000
1500
2
000
10
-3
10
-2
10
-1
10
0
10
1
10
2
0.00
0.05
0.10
0.15
0.20
0.25
DC
180°
120°
60°
30°
R
thKA
K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
Circuit
W3
3xMCD255
3xMCC255 or
I
RMS
[A] T
A
[°C]
t[s]
Z
thJC
[K/W]
t [s]
Z
thJK
[K/W]
Fig. 8 Three phase AC-controller: Power dissipation versus
R
MS
output current and ambient temperature
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
DC
180°
120°
60°
30° Constants for Z
thJC
calculation:
i R
thi
[K/W] t
i
[s]
1 0.0066 0.00054
2 0.0358 0.098
3 0.0831 0.54
4 0.0129 12
R
thJC
for various conduct. angles d:
d
DC
180°
120°
60°
30°
R
thJC
[K/W]
0.139
0.148
0.156
0.176
0.214
t
i
[s]
0.00054
0.098
0.54
12
12
Constants for Z
thJK
calculation:
i R
thi
[K/W]
1 0.0066
2 0.0358
3 0.0831
4 0.0129
5 0.04
R
thJK
for various conduct. angles d:
d
DC
180°
120°
60°
30°
R
thJK
[K/W]
0.179
0.188
0.196
0.216
0.254
Thyristor
IXYS reserves the right to change limits, conditions and dimensions. 20191210fData according to IEC 60747and per semiconductor unless otherwise specified
© 2019 IXYS all rights reserved