TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-40
-30
-20
-10
0
10
20
30
15 17 19 21 23 25 27 29 31 33 35
Frequency (GHz)
Gain & Return Loss (dB)
K Band Low Noise Amplifier TGA4506-EPU
Key Features
• Typical Frequency Range: 20 - 27 GHz
• 21 dB Nominal Gain
• 2.2 dB Nominal Noise Figure
• 12 dBm Nominal P1dB
• Bias 3.5 V, 60 mA
• 0.15 um 3MI pHEMT Technology
• Chip Dimensions 1.2 x 0.8 x 0.1 mm
(0.047 x 0.031 x 0.004) in
Primary Applications
• Point-to-Point Radio
• Point-to-MultiPoint Radio
•LMDS
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA
ORL
Gain
IRL
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
20 21 22 23 24 25 26 27
Frequency (GHz)
Noise Figure (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE I
MAXIMUM RATINGS 1/
SYMBOL PARAMETER VALUE NOTES
Vd Drain Voltage 5 V 2/
Vg Gate Voltage Range -1 TO +0.5 V
Id Drain Current 190 mA 2/ 3/
½Ig½Gate Current 6 mA 3/
PIN Input Continuous Wave Power TBD
PDPower Dissipation TBD 2/ 4/
TCH Operating Channel Temperature 150 0C5/ 6/
TMMounting Temperature (30 Seconds) 320 0C
TSTG Storage Temperature -65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of TBD, the median life is
reduced from TBD to TBD hrs.
5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
6/ These ratings apply to each individual FET.
TGA4506-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
TABLE III
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
TGA4506-EPU
PARAMETER TYPICAL UNITS
Drain Voltage, Vd 3.5 V
Drain Current, Id 60 mA
Gate Voltage, Vg -0.5 to 0 V
Small Signal Gain, S21 21 dB
Input Return Loss, S11 15 dB
Output Return Loss, S22 11 dB
Noise Figure, NF 2.2 dB
Output Power @ 1 dB Compression Gain, P1dB 12 dBm
TABLE II
DC PROBE TESTS
(Ta = 25 0C Nominal)
SYMBOL PARAMETER MINIMUM MAXIMUM VALUE
VP3 Pinch-off Voltage -1.0 -0.1 V
Q3 is 300 um FET
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
8
10
12
14
16
18
20
22
24
15 17 19 21 23 25 27 29 31 33 35
Frequency (GHz)
Gain (dB)
TGA4506-EPU
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
20 21 22 23 24 25 26 27
Frequency (GHz)
Noise Figure (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
-40
-35
-30
-25
-20
-15
-10
-5
0
15 17 19 21 23 25 27 29 31 33 35
Frequency (GHz)
Input Return Loss (dB)
TGA4506-EPU
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA
-40
-35
-30
-25
-20
-15
-10
-5
0
15 17 19 21 23 25 27 29 31 33 35
Frequency (GHz)
Output Return Loss (dB)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
5
7
9
11
13
15
17
19
21
23
-15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1
Pin (dBm)
Pout (dBm), Gain (dB)
55
60
65
70
75
80
85
90
95
100
Ids (mA)
TGA4506-EPU
Preliminary Measured Data
Bias Conditions: Vd = 3.5 V, Id = 60 mA, Freq @ 24 GHz
Pout
Gain
Ids
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Mechanical Drawing
TGA4506-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Chip Assembly Diagram
TGA4506-EPU
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Vd
Vg
RF In RF Out
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
January 7, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4506-EPU
Reflow process assembly notes:
· Use AuSn (80/20) solder with limited exposure to temperatures at or above 300§C (30 seconds max).
· An alloy station or conveyor furnace with reducing atmosphere should be used.
· No fluxes should be utilized.
· Coefficient of thermal expansion matching is critical for long-term reliability.
· Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
· Vacuum pencils and/or vacuum collets are the preferred method of pick up.
· Air bridges must be avoided during placement.
· The force impact is critical during auto placement.
· Organic attachment can be used in low-power applications.
· Curing should be done in a convection oven; proper exhaust is a safety concern.
· Microwave or radiant curing should not be used because of differential heating.
· Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
· Thermosonic ball bonding is the preferred interconnect technique.
· Force, time, and ultrasonics are critical parameters.
· Aluminum wire should not be used.
· Maximum stage temperature is 200§C.
