Advance Product Information January 7, 2004 K Band Low Noise Amplifier TGA4506-EPU Key Features * * * * * * * Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm (0.047 x 0.031 x 0.004) in Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 60 mA * Point-to-Point Radio 20 * Point-to-MultiPoint Radio 10 * LMDS G ain & R etu rn L o ss (d B ) 30 Gain 0 -10 -20 ORL -30 IRL -40 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) 3.0 Noise Figure (dB) 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 20 21 22 23 24 25 26 27 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information January 7, 2004 TGA4506-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 5V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 190 mA 2/ 3/ 1/2Ig1/2 Gate Current 6 mA 3/ PIN Input Continuous Wave Power TBD PD Power Dissipation TBD -1 TO +0.5 V T CH Operating Channel Temperature 150 C TM Mounting Temperature (30 Seconds) 320 C TSTG Storage Temperature 2/ 4/ 0 5/ 6/ 0 0 -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this bias condition with a base plate temperature of TBD, the median life is reduced from TBD to TBD hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information January 7, 2004 TGA4506-EPU TABLE II DC PROBE TESTS 0 (Ta = 25 C Nominal) SYMBOL VP3 PARAMETER Pinch-off Voltage MINIMUM MAXIMUM VALUE -1.0 -0.1 V Q3 is 300 um FET TABLE III ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Drain Voltage, Vd 3.5 V Drain Current, Id 60 mA Gate Voltage, Vg -0.5 to 0 V Small Signal Gain, S21 21 dB Input Return Loss, S11 15 dB Output Return Loss, S22 11 dB Noise Figure, NF 2.2 dB Output Power @ 1 dB Compression Gain, P1dB 12 dBm Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information January 7, 2004 TGA4506-EPU Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 60 mA 24 22 20 Gain (dB ) 18 16 14 12 10 8 15 17 19 21 23 25 27 29 31 33 35 Frequency (GHz) 3.0 2.8 Noise Figure (dB) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 20 21 22 23 24 25 26 27 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information January 7, 2004 TGA4506-EPU Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 60 mA 0 Input R eturn Loss (dB ) -5 -10 -15 -20 -25 -30 -35 -40 15 17 19 21 23 25 27 29 31 33 35 29 31 33 35 Frequency (GHz) 0 Output R eturn Loss (dB ) -5 -10 -15 -20 -25 -30 -35 -40 15 17 19 21 23 25 27 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information January 7, 2004 TGA4506-EPU Preliminary Measured Data Bias Conditions: Vd = 3.5 V, Id = 60 mA, Freq @ 24 GHz 23 100 21 95 90 Gain 17 85 Ids 15 80 13 75 11 70 9 65 Pout 7 Ids (mA) Pout (dBm), Gain (dB) 19 60 5 55 -15 -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 Pin (dBm ) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information January 7, 2004 TGA4506-EPU Mechanical Drawing . GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information January 7, 2004 TGA4506-EPU Chip Assembly Diagram Vg RF Out RF In Vd GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Advance Product Information January 7, 2004 TGA4506-EPU Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9