2SC5086-Y,LF(T - TOSHIBA - Product.Network

2SC5086

2014-03-01

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

2SC5086

VHF~UHF Band Low Noise Amplifier Applications

• Low noise figure, high gain.

• NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-base voltage VCBO 20 V

Collector-emitter voltage VCEO 12 V

Emitter-base voltage VEBO 3 V

Base current IB 40 mA

Collector current IC 80 mA

Collector power dissipation PC 100 mW

Junction temperature Tj 125 °C

Storage temperature range Tstg −55 to 125 °C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Microwave Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Transition frequency fT VCE = 10 V, IC = 20 mA 5 7 ⎯ GHz

⎪S21e⎪2 (1)

VCE = 10 V, IC = 20 mA, f = 500 MHz ⎯ 16.5 ⎯

Insertion gain ⎪S21e⎪2 (2)

VCE = 10 V, IC = 20 mA, f = 1 GHz 7.5 11 ⎯

NF (1) VCE = 10 V, IC = 5 mA, f = 500 MHz ⎯ 1 ⎯

Noise figure

NF (2) VCE = 10 V, IC = 5 mA, f = 1 GHz ⎯ 1.1 2

Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Collector cut-off current ICBO VCB = 10 V, IE = 0 ⎯ ⎯ 1 μA

Emitter cut-off current IEBO V

EB = 1 V, IC = 0 ⎯ ⎯ 1 μA

DC current gain hFE

(Note 1) VCE = 10 V, IC = 20 mA 80 ⎯ 240

Output capacitance Cob ⎯ 1.0 ⎯ pF

Reverse transfer capacitance Cre

VCB = 10 V, IE = 0, f = 1 MHz (Note 2) ⎯ 0.65 1.15 pF

Note 1: hFE classification O: 80 to 160, Y: 120 to 240

Note 2: Cre is measured by 3 terminal method with capacitance bridge.

Unit: mm

JEDEC ―

JEITA ―

TOSHIBA 2-2H1A

Weight: 2.4 mg (typ.)

Start of commercial production

1993-10

2SC5086

2014-03-01

Marking

2SC5086

2014-03-01

2SC5086

2014-03-01

S-Parameter ZO = 50 Ω, Ta = 25°C

VCE = 10 V, IC = 5 mA

Frequency S11 S21 S12 S22

(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.

200 0.715 −69.3 9.495 132.1 0.051 55.2 0.747 −29.0

400 0.542 −112.4 6.482 108.5 0.068 46.8 0.555 −35.1

600 0.476 −137.7 4.717 95.8 0.077 47.9 0.478 −36.2

800 0.447 −154.4 3.691 87.1 0.086 51.6 0.442 −37.1

1000 0.435 −166.8 3.049 79.9 0.096 55.9 0.424 −38.9

1200 0.433 −176.6 2.611 73.9 0.108 60.4 0.418 −41.8

1400 0.435 174.8 2.294 68.3 0.123 64.2 0.411 −45.0

1600 0.439 167.3 2.050 63.2 0.140 66.9 0.407 −49.0

1800 0.444 160.6 1.860 58.7 0.159 68.7 0.406 −53.6

2000 0.454 154.2 1.713 53.9 0.180 70.5 0.404 −57.8

VCE = 10 V, IC = 20 mA

Frequency S11 S21 S12 S22

(MHz) Mag. Ang. Mag. Ang. Mag. Ang. Mag. Ang.

200 0.465 −107.8 16.512 113.2 0.035 56.7 0.484 −40.9

400 0.375 −145.6 9.090 96.5 0.052 62.2 0.331 −37.8

600 0.351 −164.4 6.252 88.1 0.070 66.5 0.291 −34.1

800 0.343 −176.7 4.762 81.9 0.089 68.9 0.277 −33.3

1000 0.338 174.8 3.875 76.6 0.109 70.2 0.273 −34.0

1200 0.337 167.9 3.285 71.8 0.130 70.8 0.274 −36.2

1400 0.343 161.6 2.874 67.2 0.152 70.6 0.274 −39.3

1600 0.343 156.2 2.553 62.9 0.173 69.8 0.274 −43.4

1800 0.348 151.2 2.317 58.8 0.195 68.9 0.273 −47.8

2000 0.354 146.2 2.113 55.0 0.218 68.2 0.272 −52.1

2SC5086

2014-03-01

2SC5086

2014-03-01

2SC5086

2014-03-01

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