MIL SPECS 44E D MM 0000125 0033131 T MMMILS | The documentation and process INCH-POUND | conversion measures necessary to | | | MIL-S-19500/503A 12 April 1993 SUPERSEDING MIL-S-19500/503(EL) 12 May 1975 | comply with this revision shall be completed by 12 October 1993 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, ULTRA FAST RECOVERY, TYPES 1N6073 THROUGH 1N6081, JANTX AND JANTXV This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for three separat series of silicon, ultra fast recovery semiconductor diodes for use as power rectifiers. Two levels of product assurance are provided for each device as specified in MIL-S-19500. 1.2 Physical dimensions. See figure 1. 1.3 Maximum ratings. I Tot tw fs tw |), 1, | 01 0 rr | Types | Vp, | Vv | | | |Tyyg and T, | R [ 1 | R RWH It, = 455C | T= 470 |1,=0.5A STG J eJL FSM | | | | | [Ip =-1.0 A | | [ty = 8.3 as | 4/ 5/ 6/ V/ 2/ 3/ |Ip_ = -0.25 A Vide |v (pk) | Ade Ade ns 2c C/W A_(pk) 1N6073 50 50 0.85 3.0 30 -65 to +155 13.0 35 1N6074 | 100 100 0.85 3.0 30 -65 to +155 13.0 35 1N6075 | 150 150 0.85 3.0 30 ~65 to +155 13.0 35 1N6076 50 50 1.3 6.0 30 -65 to +155 8.5 75 1N6077 | 100 100 1.3 6.0 30 -65 to +155 8.5 75 1N6078 | 150 180 1.3 6.0 30 -65 to +155 8.5 75 1N6079 50 50 2.0 12.0 30 -65 to +155 5.0 175 1N6080 | 100 100 2.0 12.0 30 -65 to +155 5.0 175 1N6081 | 150 150 2.0 12.0 30 -65 to +155 5.0 175 4/1, and Rad rating at L = 0 and without forced air across the device body and/or leads. 2/ Derate I, rating to zero current linearly, from T, = 70C, to +150C. 3/ Higher I, rating is allowable provided that T, and/or Ty is maintained such that tT, = 155C. 4/ Ig rating without heat sinking, special mounting or forced air across the device body and/or leads. 3/ Derate Ig rating to zero current linearly, from T, = +55C, to +155C. jBeneficial comments (recommendations, additions, deletions) and any pertinent data which may be of juse in improving this document should be addressed to: US Army Research Laboratory, ATTN: AMSRL-EP-RD, |Fort Monmouth, NJ, 07703-5601 by using the Standardization Document Proposal (DD Form 1426) lappearing at the end of this document or by letter. AMSC N/A FSC 5961 OISTRIGUTION STATEMENT A. Approved for public release; distribution is unlimited.MIL SPECS 44E D M@@ 0000125 0033132 1 MMILS MIL~S-19500/503A 2. APPLICABLE DOCUMENTS 2.1 Government documents. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION MILITARY MIL-5S-19500 - Semiconductor Devices, General Specification For. STANDARDS MILITARY MIL-STD-750 - Test Method for Semiconductor Devices. MIL-STD-1276 - Leads for Electronic Component Parts. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Standardization Documents Order Desk, Building 40, 700 Robbins Avenue, Philadelphia, PA 19120-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable Laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Associated detail specification. The individual item requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions shall be as . specified in MIL-S-19500. 3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-S-19500 and figure 1. 3.3.1 Diode construction. The diode shall be metallurgically bonded, non-cavity, double plug construction. 3.3.2 Lead finish. Lead finish shall be solderable as defined in MIL~S-19500, MIL-STD-750, and as specified herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4 Marking. Marking shall be in accordance with MIL-S-19500. At the option of the manufacturer, the following marking may be omitted from the body of the diode, but shall be retained on the initial container. a. Manufacturer's identification. b. Country of origin. c. Inspection lot identification code. d. "1N" of the type designation.MIL SPECS YUE D MM 0000125 0033133 3 MBNILS MIL-S~19500/503A | Symbol | Dimensions Notes | | | 1N6O73 THROUGH 1N6075 | 1N6076 through 1N6078 | _.1N6079 through 1N6081 | | |__Inches Millimeters Inches Millimeters | Inches Millimeters | | | | | | | | | | | | L Min Max | Min Max Min | Max | Min | Max | Min Max | Min | Max | | | | g8__(0.055_|0.077 | 1.40 | 1.96 [0.065 [0.110 | 4.65 | 2.79 |0.135 [0.165 | 3.43 | 4.19 | 3 go__|0.026 [0.033 | 0.66 | 0.84 10.036 [0.042 | 0.91 | 1.07 |0.036 [0.042 | 0.91 | 1.07 G {0.140 (0.225 | 3.56 | 5.72 10.140 10.225 | 3.56 | .72 10.140 ]0.225 | 3.56 | S.72 | | | {ot 1.09 11.30 [25.4 133.02 10.90_|1.30 122.9 [33.02 10.90 {1.30 {22.9 133.02 | | | | a 10.030_| | 0.76 | 10.030_| | 0.76 | 10.030 | 1076) 4 | NOTES: Dimensions are in inches. Metric equivalents are given for general information only. Dimension 6 shall be measured at the largest diameter. The M dimension shall include all uncontrolled areas of the device. RUN FIGURE 1. Physical dimensions.MIL SPECS 4GE D MM 0000325 0033134 S MEMILS MIL-S-19500/503A 3.5 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end. 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampiing and inspection. Sampling and inspection shall be in accordance with MIL-S-19500 and as specified herein. 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-S-19500. 4.3 Screening (JANTX and JANTXV levels). Screening shall be in accordance with table Il of MIL-S-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the Limits of table I herein shall not be acceptable. | | | Screen (see I Measurement | table II of | | {_MIL-S-19500) I JANTX and JANTXV Levels | | | | | 9 {Not applicable | | { | | | | | 10 |T, = 125C | | | _| loon IV and 1 | an 1 F R1 1 | | | | 12 {See 4.3.1 _ | | | 13 |Subgroup 2 of table L herein; = | | [AV., = 20.1 V de; | | [Alp, = 1/ or 100 percent of | j |the initial value, whichever | | Jis greater. Scope display | | [evaluation (see 4.5.3). i 1/ Alp, is as follows: for 1N6073 through 1N6075 = +0.250 WA de. for 1N6076 through 1N6078 = +1.0 PA dc. for 1N6079 through 1N6081 = +5.0 WA de. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: MIL-STD-750, method 1038, T= 425C (minimum); Vewm = rated Vouy (see 1.3); Ip = rated Ip, (see 1.3); f = 60 Hz. 4.4 Quality conformance inspection. Quality conformance inspection shall be in accordance with MIL-S-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-S-19500 and table I herein. 4.4.2 Group 8 inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IVb (JANTX and JANTXV) of MIL-S-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein.MIL SPECS YUE D MM 0000125 0033135 7 MBMILS MIL-S-19500/503A 4.4.2.1 Group B inspection, table Ivb of MIL-S-19500. a. Subgroup 2: Surge current; method 4066; lesy = rated I, (see 1.3); 10 surges of 8.3 ms each at 1 minute intervals, super-imposed on Ip4 (see 439. Vewn = pated Vewm (see 1.3). b. Subgroup 3: Steady-state operation Life; method 1026 (see 4.5.5); Tj! -55C minimum, Ip4 = rated Ig (see 1.3); f = 60 Hz; Veunm = rated Vews (see 1.3), mounting conditions (see 4.5.5.1 and 4.5.5.2). c. Subgroup 5: Thermal resistance; method 4081; +25c < Th = 35C; Roj_ at bk = 0 inches, (see 1.3). d. Subgroup 6: High-temperature Life (nonoperating); method 1031; Ty = #155C. 4.4.3 Group C inspection. Group C inspection shalt be conducted in accordance with the conditions specified for subgroup testing in table V of MIL-S-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable steps of table III herein. 4.4.3.1 Group C inspection, table V_of MIL-S-19500. a. Subgroup 2: Terminal strength (tension); method 2036; test condition A, t = 15s, for 1N6073 through 1N6075 weight = 10 lbs, for 1N6076 through 1N6081, weight = 20 Lbs. b. Subgroup 6: Steady-state operation life; method 1026 (see 4.5.5); T= -55C minimum, Io4 = rated Iy (see 1.3); f = 60 Hz; Vewm = rated Veum (see 1.3), mounting conditions (see 4.5.5.1 and 4.5.5.2). 4.5 Methods of inspection. Methods of inspection shall be specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Inspection conditions. Unless otherwise specified, all inspections shall be conducted at an ambient temperature Ty Of 425C 3C. 4.5.3 Scope display evaluation. The reverse breakdown characteristics shall be viewed on an oscilloscope with display calibration factors of 20 pA/division and 10 to 50 V/division. Reverse current over the knee shall be at least 100 WA. Each device may exhibit a sharp knee characteristic and any discontinuity or dynamic instability of the trace shall be cause for rejection. 4.5.4 Reverse-recovery time. The reverse recovery time shall be measured in the circuit of figure 2 or an equivalent circuit. The recovery conditions shall be 0.5 A forward current to 1.0 A reverse current. The reverse recovery time is defined as the time the rectifier begins to conduct in the reverse direction (crosses I = zero) until the reverse current decays to - 0.25 A. The point of contact on the leads shall be no less than .375 inch (9.52 am) from the diode body. 4.5.5 Steady-state operation life. This test shall be conducted with a half-sine wavefors of the specified peak voltage impressed across the diode in the reverse direction, followed by a half-sine waveform of the specified average rectified current. The forward conduction angle of the rectified current shall be no greater than 180 degrees nor less than 150 degrees. 4.5.5.1 Mounting conditions. The diodes shall be suspended by the leads with at least 6 inches of No. 22 gauge wire between each lead and the power souce. The connecting wires may be soldered to the end of the diode leads or 4S27491 removable contacts may be used. Other contacts may be used provided they have equal or less mass than the MS27491 contacts. Ambient temperature shail be maintained at the specified temperature. No forced air shall be permitted, and the diodes shall be shielded from drafts. 4.5.5.2 Alternate mounting conditions. At the option of the manufacturer, other clip or heatsink mounting configurations may be used provided the Ip is adjusted such that each device junction temperature +125C = Ty = +155C at an ambient temperature +25C = T, 5 455C.MIL SPECS 4GE D MM 0000125 003313b 9 MMMILS MIL-S-19500/503A TABLE I. Group A_ inspection. | | | Inspection Subgroup 1 Visual and mechanical inspection Subgroup 2 Forward voltage 1N6073 thru 1N6075 1N6076 thru 1N6078 1N6079 thru 1N6081 Reverse current leakage | | | | | | { | | i [ | | | | | | | | | | | 1N6073 thru 1N6075 | 14N6076 thru 1N6078 | 1N6079 thru 1N6081 | | Breakdown voltage 1N6073 thru 1N6075 4N6076 thru 1N6078 1N6079 thru 1N6081 aa Subgrou | | | | | | | {High temperature operation: Reverse current leakage 1N6073 thru 1N6075 1N6076 thru 1N6078 1N6079 thru 1N6081 Subgroup 4 Reverse recovery time Capacitance 1N6073 thru 1N6075 1N6076 thru 1N6078 1N6079 thru 1N6081 | | | | | | | | | | | | | | { { | | | { | | | { | | | | | | | | | | i | | | { | | | | | { | | | | | Subgroups 5, 6, and 7 | | | | | | | | | | | | | | | | | | | | | | | t [Not_applicable | Method 2071 4011 40716 4021 4016 MIL-STD-750 Conditions |Pulse width = 8.3 ms and duty [cycle = 2 percent. | Tey Tem {FH 9.4 Adc 18.8 A de 37.7 Adc |DC method; V, = rated V, | (see 1.3) | I, = 100 HA de Th = +100C see 1.3) See 4.5.4 and figure 2. Vp = 12 V; f 2 100 Khz | | | | | | | | | | | | | | ies method; V_ = rated Vp | | | | | | | | | | IVgrg 5 200 wv (pk) | | | | | | | i 1/ For sampling plan, see MIL-S-19500. Ow & de de dc dc de dc dcMIL SPECS 44E D MM 0000125 0033137 O MHMILS MIL-S~19500/503A TABLE II. Groups A, B and C electrical measurements. 1/ 2/ | | | | | | | | | | MIL-STD-750 | | Limits i | |Step | Inspection | | Symbol | | Unit | | | | | | | | | | | |Method | Conditions | |Min | Max | | | _| | | | | | { | | | | | | | | | | | 1. | Forward voltage | 4011 [Pulse width = 8.3 [Ve ] | | | | | | |ms and duty cycle | | { | | | | | |= 2 percent. | | | | | | | | | | | | | | | 1N6073 thru 1N6075 | [Igy = 9-4 A de | | 2.06 | V de | | | 1N6076 thru 1N6078 [Igy = 18.8 A de | | | 1.76 | V de | | | 1N6079 thru 1N6081 | \Ipy = 37.7 A de | | | 1.50 | V de | | | | | | | | | | | 2. | Reverse current | 4016 |0C method | Ip | | | | | | | [Vp = rated Vp | | | | | | | | | (see 1.3) | | | | | | | | | | | | | | | | 1N6073 thru 1N6075 | | | | | 1.0 | pA de | | | 1N6076 thru 1N6078 | | | | | 5.0 | pA de | | | 1N6079 thru 1N6081 | | | | {10.0 | A de | | | | | | | | | | | 3. | Reverse current | 4016 {DC method; | Alp, | |3/ J | | | | [Vp = rated Vp | | | | | | | | | (see 1.3) | | | | | | | | | | | | | | | | 1N6073 thru 1N6075 | | | | } .250 | pA de | | | N6076 thru 1N6078 | | | | {1.0 | WA de | | | 1N6079 thru 1N6081 | | | | {5.0 | pA de | | | | | | | | | | | 4. [Breakdown voltage | 4021 ire = 100 LA de |cBRDR | | | | | 1N6073, 1N6076, | | | {| 60 | | Vide | | | 1N6079 | | | | | | | | | 1N6074, 1N6077, | | | | 110 | ] Vv de | | | 1N6080 | | | | | | | | | 1N6075, 1N6078, | | | | 160 | | V de | | | 1N6081 | | | | | | | | | | | | | | | | ! | j | | | i i J See footnotes at end of table.MIL SPECS WHE D MM 0000125 0033138 2 MMILS MIL-S-19500/503A + 0.1 V de maximum change from the [previous measured [value TABLE Il. Groups A, B and C electrical measurements 1/ 2/ - Continued. | | | | | | | | | | MIL-STD-750 { { Limits { | [step | Inspection | | Symbol =| | Unit | | | | | | | | | | | [Method | Conditions | [Min | Max | | | | i | | { | | | | | | | | | | | | | 5. | Forward voltage | 4011 [Pulse width = 8.3 | Ave | | | V de | | | ms and duty cycle | | | | | | | | |= 2 percent. | | | | | | | | { | | | | | | | 4N6073 thru 1N6075 | l1pq = 9-4 A de | | | | | | { 1N6076 thru 1N6078 | [Ipy = 18.8 A de | | | | | | | 1N6079 thru 1N6081 | llem = 37.7 Adc | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | | l | | 1 1/ The electrical measurements for table IVb (JANTX and JANTXV) of MIL-S-19500 are as follows: a. Subgroup 2, see table II herein, steps 1 and 2. b. Subgroup 3, see table II herein, steps 1, 2, 3, and 5. . Subgroup 6, see table Il herein, steps 1, 2, 3, and 5. 2/ The electrical measurements for table V of MIL-S-19500 are as follows: a. Subgroup 2, see table Il herein, steps 1 and 2. b. Subgroup 3, see table Il herein, steps 1 and 2. c. Subgroup 6, see table 11 herein, steps 1, 2, 3, and 5. 3/ Rated Al, or 100 percent, whichever is greater.MIL SPECS GUE D MM 0000125 0033139 4 MBMILS MIL-S-19500/503A tee B77 +0.5A- If O- 0.25A- Trr -1.0A- Ipn TYPICAL SCOPE DISPLAY 200 20 AH 4700 pF o ; on Uf put 1on $ MAX < t+) 5/ PULSE GENERATOR Vv 19 (4 OSCILLOSCOPE a e TEST CIACUIT OIAGRAM = NOTES: 1/ Rise time = 350 ps, input impedance 50 ohms, circuit impedance 50 ohms coaxial. 2/ Rise time S 250 ps, source impedance = 8 ohms maximum, PRF = 0.5 kHz, P,, 2 40 ns. 3/ Recovery conditions: 0.5 A forward current to 1.0 A reverse current. Recovery time measured when rectifier recovers to 0.25 A. 4/ Constructed from 10-10 ohm resistors 1/8 watt. 3/ Constructed from 10-100 ohm resistors 1/8 watt. FIGURE 2. Reverse recovery time test circuit and characteristic waveform.MIL SPECS MAXIMUM POWER DISSIPATION IN WATTS GGUE D MM QO0001e5 0033140 O GENILS MIL~S-19500/503A 10 L=.375" =.500 L=.750" 0 0 50 100 150 Maximum lead temperature in C (Ty at point d from body (see table below). For maximum operating junction temperature with equal two-lead conditions. L RaseL Dimensions C/W 0.000 (0.00 mm) 13 0.125 (3.18 mm) 24 0.250 (6.35 am) 35 0.375 (9.52 mm) 46 0.500 (12.7 ma) 54 0.750 (19.1 mm) | 70 FIGURE 3. Power derating curves maximum power in watts vs lead temperature for 1N6073, 1N6074, and _1N6075. 10MIL SPECS H4E D MM 0000125 0033141 2 MEMILS MIL-S-19500/503A MAXIMUM POWER DISSIPATION IN WATTS 0 50 100 150 Maximum lead temperature in C a. at point d from body (see table below). For maximum operating junction temperature with equal two-lead conditions. L Roget Dimensions C/W 0.000 (0.00 mm) 8.5 0.125 (3.18 mm) 14.0 | 0.250 (6.35 mm) 19.5 | 0.375 (9.52 mm) 25.0 | 0.500 (12.7 ma) 30.0 | 0.750 (19.1 sm) 40.0 FIGURE 4. Power _derating curves maximum power in watts vs lead temperature for 1N6076, IN6077, and 1N6078. 11MIL SPECS WUE D MM OO001eS 0033142 4 MMILS MIL-S-19500/503A 40 36 wr 32 <x = = 28 = Oo - 24 x a A 20 Oo . tw 16 =z oO a x 12 > = a 8 = 4 0 ft) 50 100 150 Maximum lead temperature in C (T, at point d from body (see table below). For maximum operating junction temperature with equal two-lead conditions. | | L R eJ-L | | Dimensions | C/W I | | 0.000 (0.00 mm) | 5.0 | 0.125 (3.18 mm) | 11.5 | 0.250 (6.35 mm) | 17.5 | 0.375 (9.52 mm) | 23.5 | 0.500 (12.7 mm) | 29.0 | 0.750 (19.1 wm) | 40.0 | FIGURE 5. Power derating curves maximum power in watts vs lead temperature for 1N6079, 1N6080, and 1N60811 . 12MIL SPECS U4UE D MM OO001eS 0033143 & MBMILS MIL-S-19500/503A 5. PACKAGING 5.1 Packaging requirements. The requirements for packaging shall be in accordance with MIL-S-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory). 6.1 Notes. The notes specified in MIL-S~19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents should specify the following: a. Issue of DODISS to be cited in the solicitation. c. Lead finish as applicable (see 3.3.2). d. Type designation and quality product assurance Level. 6.3 Thermal impedance. Device power capability with lead dissipators or body forced air cooling, may be determined from 2, 3, and 4, which shows maximum power dissipation in watts versus lead temperature in C as a function of the distance L" from the diode bedy at which lead temperature is measured. 6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue, due to the extensiveness of the changes. CONCLUDING MATERIAL Custodians: Preparing activity: Army - ER Army - ER Air Force - 17 Agent: Review activity: DLA - ES DLA - ES Air Force - 10, 80, 85, 99 (Project 5961-1501) 13