AUIRF1404S
AUIRF1404L
VDSS 40V
RDS(on) typ. 3.5m
max. 4.0m
ID (Silicon Limited) 162A
ID (Package Limited) 75A
Features
Advanced Planar Technology
Dynamic dv/dt Rating
175°C Operating Temp erature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
1 2015-11-11
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 162
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 115
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) 75
IDM Pulsed Drain Current 650
PD @TA = 25°C Maximum Power Dissipation 3.8 W
PD @TC = 25°C Maximum Power Dissipation 200
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 519
mJ
IAR Avalanche Current 95 A
EAR Repetitive Avalanche Energy 20 mJ
Dv/dt Peak Diode Recovery 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case) 300 °C
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition be yon d those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratin gs are measured under bo ard mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.75
°C/W
RJA Junction-to-Ambient ( PCB Mount, steady state) 40
D2Pak
AUIRF1404S TO-262
AUIRF1404L
S
D
G
S
D
G
D
Base part number Package Type Standard Pack
Form Quantity
AUIRF1404L TO-262 Tube 50 AUIRF1404L
AUIRF1404S D2-Pak Tube 50 AUIRF1404S
Tape and Reel Left 800 AUIRF1404STRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRF1404S/L
2 2015-11-11
Notes:
Repetitive rating; pulse width limit ed by max. junction temperature. (See fig. 11)
Starting TJ = 25°C, L = 0.12mH, RG = 25, IAS = 95A, VGS =10V. (See fig. 12)
ISD 95A, di/dt 150A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
C
oss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A.
Use IRF1404 data and test conditions.
This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
R is measured at TJ approximately 90°C.
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.036 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.5 4.0 m VGS = 10V, ID = 95A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 106 ––– ––– S VDS = 25V, ID = 60A
IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS = 40 V, VGS = 0V
––– ––– 250 VDS = 32V,VGS = 0V,TJ =125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 VGS = -20V
Dynamic Electrical Characte ristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– 160 200 nC
ID = 95A
Qgs Gate-to-Source Charge ––– 35 ––– VDS = 32V
Qgd Gate-to-Drain Charge ––– 42 60 VGS = 10V
td(on) Turn-On Delay Time ––– 17 –––
ns
VDD = 20V
tr Rise Time ––– 140 ––– ID = 95A
td(off) Turn-Off Delay Time ––– 72 ––– RG= 2.5
tf Fall Time ––– 26 ––– RD= 0.21
LS Internal Source Inductance ––– 7.5 ––– nH Between lead,
and center of die contact
Ciss Input Capacitance ––– 7360 –––
pF
VGS = 0V
Coss Output Capacitance ––– 1680 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 240 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6630 ––– VGS = 0V, VDS = 1.0V ƒ = 1.0MHz
Coss Output Capacitance ––– 1490 ––– VGS = 0V, VDS = 32V ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1540 ––– VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 162 A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 650 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 95A,VGS = 0V
trr Reverse Re covery Time ––– 71 110 ns TJ = 25°C ,IF = 95A
Qrr Reverse Recovery Charge ––– 180 270 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn -on is dominated by LS+LD)
AUIRF1404S/L
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Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteri stics Fig. 4 Normalized On-Resistance
Vs. Temperature
Fig. 1 Typical Output Characteristics
10
100
1000
0.1 1 10 10 0
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Dra in -to-Sou rc e Curren t (A)
DS
D
4.5V
10
100
1000
0.1 1 10 100
20µs PULSE W ID TH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to - S o u rc e Curren t (A)
DS
D
4.5V
10
100
1000
4.0 5.0 6.0 7.0 8.0 9.0
V = 25V
20µs PUL SE WIDTH
DS
V , Gate-to-Source Voltage (V )
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction Temperature ( C)
R , Drain-to-So urce On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
159A
AUIRF1404S/L
4 2015-11-11
Fig 5. Typical Cap acitance vs.
Drain-to-Source Voltage Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
1 10 100
0
2000
4000
6000
8000
10000
12000
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
040 80 120 160 200 240
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Volt a ge (V )
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
95A
V = 20V
DS
V = 32V
DS
1
10
100
1000
0.4 0.8 1.2 1.6 2.0 2.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
1
10
100
1000
10000
1 10 100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T = 175 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
AUIRF1404S/L
5 2015-11-11
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
0
40
80
120
160
200
T , Case T emperat ure ( C)
I , Drai n C ur r ent (A )
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. P eak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SING LE PULSE
(T HE RMAL RES P O NS E)
AUIRF1404S/L
6 2015-11-11
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
tp
V
(BR)DSS
I
AS
Fig 13b. Gate Charge Test Circuit
Fig 13a. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
25 50 75 100 125 150 175
0
200
400
600
800
1000
1200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
39A
67A
95A
020 40 60 80 100
IAV , Avalanche Current ( A)
40
42
44
46
48
50
V DSav , Avalanche Voltage ( V )
AUIRF1404S/L
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Fig 14. Peak Diode Recov ery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRF1404S/L
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D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF1404S
Lot Code
Part Number
IR Logo
D2Pak (TO-263AB) Part Marking Info rmation
AUIRF1404S/L
9 2015-11-11
TO-262 Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRF1404L
Lot Code
Part Number
IR Logo
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
AUIRF1404S/L
10 2015-11-11
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
3
4
4
TRR
FEED DIRE CT ION
1.85 (.073)
1.65 (.065)
1.60 (.06 3)
1.50 (.05 9)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1. 197 )
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSI ON: MILLIME TE R.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRF1404S/L
11 2015-11-11
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level TO-262 MSL1
D2-Pak
ESD
Machine Model Class M4 (+/- 425V) †
AEC-Q101-002
Human Body Model Class H2 (+/- 4000V )†
AEC-Q101-001
Charged Device Model Class C5 (+/-1125V)†
AEC-Q101-005
RoHS Compliant Yes
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Revision History
Date Comments
11/11/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
† Highest passing voltage.
