AAT4901
Buffered Power Full-BridgeFastSwitchTM
PRODUCT DATASHEET
10 4901.2010.01.1.2
www.analogictech.com
Application Information
Input Supply Capacitor
The input capacitor provides a low impedance loop for
the edges of pulsed current drawn by the AAT4901 and
reduces the surge current drawn from the input power.
A 4.7F to 10F X7R or X5R low ESR/ESL ceramic capac-
itor is selected for the input supply decoupling. To mini-
mize the tray resistance, the capacitor should be placed
as closely as possible to the input pin. This keeps the
high frequency content of input current localized, mini-
mizing EMI and input voltage ripple.
Shoot-Through Protection
The internal high-side and low-side MOSFETs of the
AAT4901 cannot conduct at the same time to prevent
shoot-through current. When the high-side MOSFET
turns on, the low-side MOSFET turns off first; after 5ns
break-before-make time, the high-side MOSFET then
turns on. Similarly, before the low-side MOSFET turns
on, the high-side MOSFET turns off; after a certain
break-before-make time (5ns typ.), the low-side MOSFET
turns on. The dead time between the high-side and low-
side turn-on should be kept as low as possible to mini-
mize current flows through the body diode of the high-
side and/or low-side MOSFET(s). The break-before-make
shoot-through protection significantly reduces losses
associated with the driver at high frequency.
Thermal Calculations
In the dual low-side MOSFET driver application, the power
dissipation of the AAT4901 includes the power dissipation
in the MOSFETs due to charging and discharging the gate
capacitance, the AC quiescent current power dissipation,
and transient power in the driver during output transi-
tions. As the transient power is usually very small, its
losses can be ignored. Maximum package power dissipa-
tion can be estimated by the following equation:
Eq. 1: TJ(MAX) - TA
θJA
PD(MAX) = VCC · IIN =
= IQAC · VCC + QG(tot)FSW · VCC
Where:
TJ(MAX) = junction temperature of the dice (°C).
TA = ambient temperature (°C).
JA = thermal resistance (225°C/W).
IQAC = AC quiescent current of the driver (mA).
QG(tot) = total gate charge of external low side MOSFETs
(nC).
FSW = switching frequency (MHz).
The maximum junction temperature for the SC70JW-8
package can be derived from Equation 1:
Eq. 2: TJ(MAX) = PD(MAX) · θJA + T
For example, if the AAT4901 drives 2 AAT9560 MOSFETs
whose maximum gate charge is specified as 13nC for
VGATE = 5V, the total power dissipation in the driver at a
switching frequency of 1MHz equals:
PD(tot) = 2 · (5V · 13nC · 1MHz) + 5V · 4.0mA = 150m
Gate Drive Current Ratings
Assuming that the maximum gate charge of the dual
low-side MOSFETs are equal, the maximum gate drive
capability for the designed maximum junction tempera-
ture without an external resistor can be derived from
Equation 1:
Eq. 3: 1
2 · FSW
TJ(MAX) - TA
θJA · VIN
QG(MAX) = · - IQAC
The relationship between gate capacitance, turn-on/
turn-off time, and the MOSFET driver current rating can
be determined by:
Eq. 4: IG(MAX) = CG(MAX) · dV
dt
Where:
IG(MAX) = peak drive current for a given voltage
CG(MAX) = maximum gate capacitance
dV = MOSFET gate-to-source voltage
dt = rising time of MOSFET gate-to-source voltage