DESCRIPTION
The
μ
PC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC
can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
wide band matched IC.
μ
PC8178TK adopts 6-pin lead-less minimold package using same chip as the conventional
μ
PC8178TB in 6-pin super minimold.
TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50 %.
This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process.
FEATURES
Low current consumption : ICC = 1.9 mA TYP. @ VCC = 3.0 V
V :egatlov ylppuSCC = 2.4 to 3.3 V
Excellent isolation : ISL = 40 dB TYP. @ f = 1.0 GHz
zHG 9.1 = f @ .PYT Bd 14 = LSI
zHG 4.2 = f @ .PYT Bd 24 = LSI
G :niag rewoPP = 11.0 dB TYP. @ f = 1.0 GHz
G P = 11.0 dB TYP. @ f = 1.9 GHz
G P = 11.0 dB TYP. @ f = 2.4 GHz
Gain 1 dB compression output power : PO (1 dB) = 5.5 dBm TYP. @ f = 1.0 GHz
P O (1 dB) = 8.0 dBm TYP. @ f = 1.9 GHz
P O (1 dB) = 8.0 dBm TYP. @ f = 2.4 GHz
Operating frequency : 0.1 to 2.4 GHz (Output port LC matching)
High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.3 × 0.55 mm)
)eulav dradnatS( gm 3 :thgiew thgiL
APPLICAION
Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
BIPOLAR ANALOG INTEGRATED CIRCUIT
μ
PC8178TK
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
Document No. PU10063EJ02V0DS (2nd edition)
Date Published March 2005 CP(K)
The mark shows major revised points.
DISCONTINUED
ORDERING INFORMATION
Part Number Order Number Package Marking Supplying Form
µ
PC8178TK-E2
µ
PC8178TK-E2-A 6-pin lead-less minimold
(1511) (Pb-Free) Note
6B Embossed tape 8 mm wide
Pin 1, 2, 3 face the perforation side of the tape
Qty 5 kpcs/reel
Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact
your nearby sales office.
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PC8178TK-A
PRODUCT LINE-UP (TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 )
Parameter 1.0 GHz output port
matching frequency
1.66 GHz output port
matching frequency
1.9 GHz output port
matching frequency
2.4 GHz output port
matching frequency
Marking
Part No.
ICC
(mA)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
GP
(dB)
ISL
(dB)
PO(1dB)
(dBm)
µ
PC8178TB 1.9 11.0 39.0 4.0 11.5 40.0 7.0 11.5 38.0 7.5 C3B
µ
PC8178TK 1.9 11.0 40.0 5.5 11.0 41.0 8.0 11.0 42.0 8.0 6B
µ
PC8179TB 4.0 13.5 44.0 +3.0 15.5 42.0 +1.5 15.5 41.0 +1.0 C3C
µ
PC8128TB 2.8 12.5 39.0 4.0 13.0 39.0 4.0 13.0 37.0 4.0 C2P
µ
PC8151TB 4.2 12.5 38.0 +2.5 15.0 36.0 +1.5 15.0 34.0 +0.5 C2U
µ
PC8152TB 5.6 23.0 40.0 4.5 19.5 38.0 8.5 17.5 35.0 8.5 C2V
Remarks 1. Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail.
2. To know the associated product, please refer to each latest data sheet.
Data Sheet PU10063EJ02V0DS
2
µ
PC8178TK
DISCONTINUED
SYSTEM APPLICATION EXAMPLE
Location examples in digital cellular
RX
Low Noise Tr.
SW
TX
÷N PLL
PLL
I
Q
I
Q
DEMOD.
90˚
PA
φ
These ICs can be added to your system around parts, when you need more isolation or gain. The application
herein, however, shows only examples, therefore the application can depend on your kit evaluation.
Data Sheet PU10063EJ02V0DS 3
µ
PC8178TK
DISCONTINUED
PIN CONNECTIONS
Pin No. Pin Name
1 INPUT
2 GND
3 GND
4 OUTPUT
5 GND
1
2
3
6
6B
(Top View)
5
4
6
5
4
1
(Bottom View)
2
3
6 VCC
PIN EXPLANATION
Pin
No.
Pin
Name
Applied
Voltage
(V)
Pin
Voltage
(V)Note
Function and Applications Internal Equivalent Circuit
1 INPUT 0.90 Signal input pin. A internal
matching circuit, configured with
resisters, enables 50 connection
over a wide band. This pin must
be coupled to signal source with
capacitor for DC cut.
2
3
5
GND 0 Ground pin. This pin should be
connected to system ground with
minimum inductance. Ground
pattern on the board should be
formed as wide as possible.
All the ground pins must be con-
nected together with wide ground
pattern to decrease impedance
defference.
4 OUTPUT Voltage
as same
as VCC
through
external
inductor
Signal output pin. This pin is de-
signed as collector output. Due to
the high impedance output, this pin
should be externally equipped with
LC matching circuit to next stage.
For L, a size 1 005 chip inductor
can be chosen.
6 VCC 2.4 to 3.3 Power supply pin. This pin should
be externally equipped with bypass
capacitor to minimize its
impedance.
2
35
6
4
1
Note Pin voltage is measured at VCC = 3.0 V.
Data Sheet PU10063EJ02V0DS
4
µ
PC8178TK
DISCONTINUED
ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Test Conditions Ratings Unit
Supply Voltage VCC TA = +25°C, Pin 4, Pin 6 3.6 V
Circuit Current ICC TA = +25°C 15 mA
Power Dissipation PD TA = +85°C Note 232 mW
Operating Ambient Temperature TA40 to +85 °C
Storage Temperature Tstg 55 to +150 °C
Input Power Pin TA = +25°C +5 dBm
Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RANGE
Parameter Symbol MIN. TYP. MAX. Unit Remarks
Supply Voltage VCC 2.4 3.0 3.3 V The same voltage should be applied to
pin 4 and pin 6.
Operating Ambient Temperature TA 40 +25 +85 °C
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TA = +25°C, VCC = Vout = 3.0 V, ZS = ZL = 50 , at LC matched frequency)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Circuit Current ICC No signal 1.4 1.9 2.4 mA
Power Gain GP f = 1.0 GHz, Pin = 30 dBm
f = 1.9 GHz, Pin = 30 dBm
f = 2.4 GHz, Pin = 30 dBm
9.0
9.0
9.0
11.0
11.0
11.0
13.0
13.5
13.5
dB
Isolation ISL f = 1.0 GHz, Pin = 30 dBm
f = 1.9 GHz, Pin = 30 dBm
f = 2.4 GHz, Pin = 30 dBm
35.0
36.0
37.0
40.0
41.0
42.0
dB
Gain 1 dB Compression Output
Power
PO(1 dB) f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
8.0
11.0
11.5
5.5
8.0
8.0
dBm
Noise Figure NF f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
5.5
5.5
5.5
7.0
7.0
7.0
dB
Input Return Loss RLin f = 1.0 GHz, Pin = 30 dBm
f = 1.9 GHz, Pin = 30 dBm
f = 2.4 GHz, Pin = 30 dBm
4.0
5.0
6.5
7.0
8.0
9.5
dB
Data Sheet PU10063EJ02V0DS 5
µ
PC8178TK
DISCONTINUED
TEST CIRCUITS
<1> f = 1.0 GHz
Strip Line : 5 mm
IN OUT
L
1
4
2, 3, 5
6
1
C
1
C
2
C
3
C
5
Output port matching circuit
C
4
C
6
DUT
V
CC
Strip Line : 1 mm
<2> f = 1.9 GHz
IN OUT
L1
4
2, 3, 5
6
1
C1C2C3
C6
Output port matching circuit
C5C4
C7
DUT
VCC
Strip Line : 7 mm
<3> f = 2.4 GHz
IN OUT
L2
4
2, 3, 5
6
1
C1C2
C5
Output port matching circuit
C4C3
C6
DUT
VCC
Strip Line : 3 mm
Strip Line : 4 mm
L1
Data Sheet PU10063EJ02V0DS
6
µ
PC8178TK
DISCONTINUED
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD
<1> f = 1.0 GHz
VCC
C
1
C
5
C
4
C
3
L
1
OUT
IN
PC8178TK
µ
Top View
Mounting direction
6B
C
6
V
CC
C
2
(1) 42 × 35 × 0.4 mm polyimide board, double-sided copper clad
(2) Back side: GND pattern
(3) Gold plated on pattern
(4) { : Through holes
COMPONENT LIST
Form Symbol Value Type code Maker
Chip capacitor C1, C3 1 000 pF GRM40CH102J50PT murata
C20.75 pF GRM39CKR75C50PT murata
C420 pF GRM39CH200J50PT murata
C510 pF GRM39CH100D50PT murata
Feed-though Capacitor C6 1 000 pF DFT301-801 × 7R102S50 murata
Chip inductor L112 nH LL1608-FH12N TOKO
Data Sheet PU10063EJ02V0DS 7
µ
PC8178TK
DISCONTINUED
<2> f = 1.9 GHz
VCC
C
1
C
5
C
4
C
6
C
2
C
3
L
1
OUT
IN
PC8178TK
µ
Top View
Mounting direction
6B
C
7
V
CC
(1) 42 × 35 × 0.4 mm polyimide board, double-sided copper clad
(2) Back side: GND pattern
(3) Gold plated on pattern
(4) { : Through holes
COMPONENT LIST
Form Symbol Value Type code Maker
Chip capacitor C1, C3, C5, C6 1 000 pF GRM40CH102J50PT murata
C20.5 pF GRM39CKR5C50PT murata
C48 pF GRM39CH080D50PT murata
Feed-though Capacitor C7 1 000 pF DFT301-801 × 7R102S50 murata
Chip inductor L12.7 nH LL1608-FH2N7S TOKO
Data Sheet PU10063EJ02V0DS
8
µ
PC8178TK
DISCONTINUED
<3> f = 2.4 GHz
VCC
C
1
C
4
C
3
C
5
C
2
L
2
OUT
IN
PC8178TK
µ
Top View
Mounting direction
6B
C
6
V
CC
L
1
(1) 42 × 35 × 0.4 mm polyimide board, double-sided copper clad
(2) Back side: GND pattern
(3) Gold plated on pattern
(4) { : Through holes
COMPONENT LIST
Form Symbol Value Type code Maker
Chip capacitor C1, C2, C4, C5 1 000 pF GRM40CH102J50PT murata
C310 pF GRM39CH100D50PT murata
Feed-though Capacitor C6 1 000 pF DFT301-801 × 7R102S50 murata
Chip inductor L12.7 nH LL1608-FH2N7S TOKO
L21.8 nH LL1608-FH1N8S TOKO
Data Sheet PU10063EJ02V0DS 9
µ
PC8178TK
DISCONTINUED
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
00
0.5
0.5
1.0
1.0
1.5
1.5
2.0
2.0
2.5
2.5
3.0
3.0 3.5 4.0
–40°C
T
A
= +25°C
+50°C
+85°C
–20°C
Circuit Current I
CC
(mA)
CIRCUIT CURRENT vs. SUPPLY VOLTAGE
Supply Voltage V
CC
(V)
Remark The graph indicates nominal characteristics.
Data Sheet PU10063EJ02V0DS
10
µ
PC8178TK
DISCONTINUED
f = 1.0 GHz MATCHING
2
4
6
8
10
12
14
16
18
20
2
4
6
8
10
12
–14
16
18
20
2
4
6
8
10
12
14
16
18
START 100.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
0
0
S
21
-FREQUENCY S
22
-FREQUENCY
S21 log MAG 2 dB/ REF
0
dB 1 :
11.235
dB
S11 log MAG 2 dB/ REF 0 dB 1 : –
6.9156
dB
S22 log MAG 2 dB/ REF
0
dB 1 : –
16.86
dB
1
1
1: 63.219
64.27
2.4764 pF
1: 54.049
12.43
12.804 pF
1
3.0 V
2.4 V
2.7 V
V
CC
= 3.3 V
3.3 V
3.0 V
V
CC
= 2.4 V
2.7 V
1
1
VCC = 2.4 V
2.7 V
3.0 V
3.3 V
0
MARKER 1
1.0 GHz
MARKER 1
1.0 GHz
P
in
= 30 dBm,
MARKER 1
f = 1.0 GHz
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm
P
in
= 30 dBm,
MARKER 1
f = 1.0 GHz
P
in
= 30 dBm,
MARKER 1
f = 1.0 GHz
20
S
11
-FREQUENCY S
22
-FREQUENCY
S
11
-FREQUENCY S
12
-FREQUENCY
20
25
30
35
40
45
50
55
60
65
START 100.000 000 MHz STOP 3 100.000 000 MHz
S12 log MAG 5 dB/ REF –
20
dB 1 : –
40.104
dB
1
P
in
= 30 dBm,
MARKER 1
f = 1.0 GHz
70
VCC = 2.4 V
2.7 V
3.0 V
3.3 V
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS 11
µ
PC8178TK
DISCONTINUED
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
TA =
40°C
+
25°C
+
85°C
T
A
=
40°C
+
25°C
+
85°C
0
2
4
6
8
10
12
14
16
18
20
0
–2
–4
–6
–8
–10
–12
–14
–16
–18
–20
0
–2
–4
–6
–8
–10
–12
–14
–16
–18
–20
1
1
1
T
A
=
40
°
C
+25
°
C
+85
°
C
S
21
-FREQUENCY
S
11
-FREQUENCY S
12
-FREQUENCY
S
22
-FREQUENCY
S
21
log MAG 2 dB/ REF
0
dB 1 :
11.053
dB S
22
log MAG 2 dB/ REF
0
dB 1 : –
13.758
dB
S
11
log MAG 2 dB/ REF
0
dB 1 : –
6.8297
dB
Pin =
30 dBm, VCC = 3.0 V
MARKER 1
f = 1.0 GHz
Pin =
30 dBm, VCC = 3.0 V
MARKER 1
f = 1.0 GHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
T
A
= –40
°
C
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
1
S
12
log MAG 5 dB/ REF –
20
dB 1 : –
39.127
dB
Pin = 30 dBm, VCC = 3.0 V
MARKER 1
f = 1.0 GHz
+85
°
C
+25
°
C
Pin =
30 dBm, VCC = 3.0 V
MARKER 1
f = 1.0 GHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS
12
µ
PC8178TK
DISCONTINUED
V
CC
= 3.3 V
3.0 V 2.4 V
2.7 V
5
10
0
–5
–10
–15
–20
–25
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
–30
5
10
0
–5
–10
–15
–20
–25
–30
010
–10
–20
–30
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
–30
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
–30
0
–10
–20
0
–10
–20
010
–10
–20
+25°C
T
A
= –40°C
+85°C
OIP
3
= 5.0 dBm
OIP
3
= 4.2 dBm
OIP
3
= 5.3 dBm
0
–10
–20
–30 0
–10
–20
IM
3 (des)
P
out (des)
P
out (undes)
IM
3 (undes)
P
out (des)
P
out (undes)
IM
3 (des)
IM
3 (undes)
IM
3 (des)
IM
3 (undes)
P
out (des)
P
out (undes)
P
out (des)
P
out (undes)
IM
3 (des)
V
CC
= 3.0 V
f = 1.0 GHz
OIP
3
= 3.5 dBm
V
CC
= 2.4 V
f1 = 1 000 MHz
f2 = 1 001 MHz
V
CC
= 3.3 V
f1 = 1 000 MHz
f2 = 1 001 MHz
IM
3 (undes)
V
CC
= 3.0 V
f1 = 1 000 MHz
f2 = 1 001 MHz
V
CC
= 2.7 V
f1 = 1 000 MHz
f2 = 1 001 MHz
f = 1.0 GHz
Output Power P
out
(dBm)
OUTPUT POWER vs. INPUT POWER
Input Power P
in
(dBm)
Output Power P
out
(dBm)
OUTPUT POWER vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
Input Power P
in
(dBm)
OUTPUT POWER, IM3 vs. INPUT POWER
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS 13
µ
PC8178TK
DISCONTINUED
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
–30
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
–30
0
–10
–20
–30 0
–10–15 –5
–20–25
0
6.5
6
5.5
5
4.5
4
2 2.5 3 3.5 4
–10
–15 –5
–20–25
IM
3 (undes)
P
out (undes)
P
out (des)
IM
3 (des)
IM
3 (des)
IM
3 (undes)
P
out (undes)
P
out (des)
P
out (undes)
P
out (des)
IM
3 (des)
IM
3 (undes)
0
–10
–15 –5
–20–25
0
10
20
30
40
50
60
2.4 V
2.7 V
V
CC
= 3.0 V
3.3 V
OIP
3
= 5.0 dBm
f = 1.0 GHz
–40°C
T
A
= +85°C
V
CC
= 3.0 V
f1 = 1 000 MHz
f2 = 1 001 MHz
OIP
3
= 3.0 dBm
V
CC
= 3.0 V
T
A
= –40°C
f1 = 1 000 MHz
f2 = 1 001 MHz
OIP
3
= 5.0 dBm
V
CC
= 3.0 V
T
A
= +85°C
f1 = 1 000 MHz
f2 = 1 001 MHz
f1 = 1 000 MHz
f2 = 1 001 MHz
+25°C
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM
3
vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM
3
vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM
3
vs. INPUT POWER
Input Power P
in
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
Output Power of Each Tone P
out (each)
(dBm)
Noise Figure NF (dB)
NOISE FIGURE vs. SUPPLY VOLTAGE
Supply Voltage V
CC
(V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS
14
µ
PC8178TK
DISCONTINUED
f = 1.9 GHz MATCHING
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm
START 100.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz STOP 3 100.000 000 MHz
1: 33.535
44.393
1.8869 pF
1
1
MARKER 1
1.9 GHz
MARKER 1
1.9 GHz
1: 43.529
16.648
5.0314 pF
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
0
2
4
6
8
10
12
14
16
18
0
S
21
log MAG 2 dB/ REF
0
dB 1 :
11.5
dB S
22
log MAG 2 dB/ REF
0
dB 1 : –
15.578
dB
S
11
log MAG 2 dB/ REF 0 dB 1 : –
8.4012
dB
1
2.4 V
3.3 V
V
CC
= 3.0 V
2.7 V
–4
–6
–8
–10
–12
–14
–16
–18
–20
–2
1
V
CC
= 2.4 V
3.3 V
3.0 V
2.7 V
START 100.000 000 MHz STOP 3 100.000 000 MHz
0
–4
–6
–8
–10
–12
–14
–16
–18
–20
–2
V
CC
= 2.4 V
2.7 V
3.0 V
3.3 V
S
11
-FREQUENCY S
22
-FREQUENCY
S
21
-FREQUENCY
S
11
-FREQUENCY S
12
-FREQUENCY
S
22
-FREQUENCY
1
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm
20
P
in
=
30 dBm,
MARKER 1
f = 1.9 GHz
P
in
=
30 dBm,
MARKER 1
f = 1.9 GHz
P
in
= 30 dBm,
MARKER 1 f = 1.9 GHz
S
12
log MAG 5 dB/ REF –
20
dB 1 : –
41.705
dB
1
START 100.000 000 MHz STOP 3 100.000 000 MHz
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
P
in
= 30 dBm,
MARKER 1 f = 1.9 GHz
V
CC
= 2.4 V
2.7 V
3.0 V
3.3 V
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS 15
µ
PC8178TK
DISCONTINUED
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
20
S
21
log MAG 2 dB/ REF
0
dB 1 :
11.553
dB
S
11
log MAG 2 dB/ REF
0
dB 1 : –
8.2405
dB
1
T
A
= –40°C
T
A
= –40°C
+25°C
+85°C
+85°C
+25°C
1
T
A
= –40°C
+25°C
+85°C
1
START 100.000 000 MHz STOP 3 100.000 000 MHz
0
2
4
6
8
10
12
14
16
18
20
S
22
log MAG 2 dB/ REF
0
dB 1 : –
14.437
dB
S
21
-FREQUENCY
S
11
-FREQUENCY S
12
-FREQUENCY
S
22
-FREQUENCY
P
in
= 30 dBm, V
CC
= 3.0 V
MARKER 1
f = 1.9 GHz
P
in
= 30 dBm,
V
CC
= 3.0 V,
MARKER 1 f = 1.9 GHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
S
12
log MAG 5 dB/ REF
20
dB 1 : –
40.84
dB
P
in
= 30 dBm, V
CC
= 3.0 V
MARKER 1
f = 1.9 GHz T
A
= –40°C
+85°C
+25°C
1
P
in
= 30 dBm, V
CC
= 3.0 V
MARKER 1
f = 1.9 GHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS
16
µ
PC8178TK
DISCONTINUED
30 010
10
20 010
10
20
5
10
0
5
10
15
20
25 30
5
10
0
5
10
15
20
25
VCC = 3.3 V
2.4 V
2.7 V
3.0 V
T
A
= 40°C
+25°C
+85°C
20
10
0
30
40
50
60
70
80
10
20
20
10
0
30
40
50
60
70
80
10
20
20
10
0
30
40
50
60
70
10
20
30
OIP
3
= 2.3 dBm
OIP3 = 1.6 dBm
OIP
3
= 2.5 dBm
OIP
3
= 0.8 dBm
P
out
(undes)
P
out
(des)
P
out
(undes)
P
out (undes)
P
out (undes)
P
out
(des)
P
out (des)
0
10
20
80
30 0
10
20 30
20
10
0
30
40
50
60
70
80
10
20
30
0
10
20
0
10
20
IM
3
(undes)
IM
3
(des)
IM
3
(undes)
IM
3 (undes)
P
out (des)
IM
3 (des)
IM
3 (undes)
IM
3
(des)
IM
3 (des)
f = 1.9 GHz
f = 1.9 GHz, V
CC
= 3.0 V
V
CC
= 3.0 V
f1 = 1 900 MHz
f2 = 1 901 MHz
V
CC
= 2.4 V
f1 = 1 900 MHz
f2 = 1 901 MHz
V
CC
= 2.7 V
f1 = 1 900 MHz
f2 = 1 901 MHz
V
CC
= 3.3 V
f1 = 1 900 MHz
f2 = 1 901 MHz
Output Power P
out
(dBm)
OUTPUT POWER vs. INPUT POWER
Input Power P
in
(dBm)
Output Power P
out
(dBm)
OUTPUT POWER vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS 17
µ
PC8178TK
DISCONTINUED
20
10
0
30
40
50
60
70
80
10
20
30
20
10
0
30
40
50
60
70
80
10
20
30
20
10
0
30
40
50
60
70
80
10
20
30
0
10
20
0
10
20
0
10
20
IM
3
(undes)
IM
3
(des)
OIP3 = 2.3 dBm
OIP3 = 2.3 dBm
P
out
(undes)
P
out
(des)
Pout (undes)
Pout (des)
IM3 (undes) IM3 (des)
IM3 (undes)
IM3 (des)
Pout (des)
Pout (undes)
0
1015 5
2025
0
5
10
15
20
25
30
40
45
50
35
VCC = 3.0 V
3.3 V
2.4 V
2.7 V
f1 = 1 900 MHz
f2 = 1 901 MHz
OIP3 = 2.1 dBm
VCC = 3.0 V
f1 = 1 900 MHz
f2 = 1 901 MHz
VCC = 3.0 V
TA = 40°C
f1 = 1 900 MHz
f2 = 1 901 MHz
VCC = 3.0 V
TA = +85˚C
f1 = 1 900 MHz
f2 = 1 901 MHz
Output power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power Pin (dBm)
Output power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power Pin (dBm)
Output power Pout (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power Pin (dBm)
3rd Order Intermodulation Distortion IM3 (dBc)
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
Output Power of Each Tone Pout (each) (dBm)
6.5
6
5.5
5
4.5
42 2.5 3 3.5 4
TA = +85°C
40°C
+25°C
f = 1.9 GHz
Noise Figure NF (dB)
NOISE FIGURE vs. SUPPLY VOLTAGE
Supply Voltage VCC (V)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS
18
µ
PC8178TK
DISCONTINUED
f = 2.4 GHz MATCHING
START 100.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
1
MARKER 1
2.4 GHz
MARKER 1
2.4 GHz
1
1: 26.945
32.572
2.0359 pF
1: 47.047 13.205
875.69 pH
S21 log MAG 2 dB/ REF
0
dB 1 :
11.623
dB
S11 log MAG 2 dB/ REF
0
dB 1 : –
10.022
dB
1
1
V
CC
= 3.3 V
2.4 V
3.0 V
2.7 V
S22 log MAG 2 dB/ REF
0
dB 1 : –
16.424
dB
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
8
10
12
14
16
18
0
2
4
6
8
10
12
14
16
18
20
V
CC
= 2.4 V
2.7 V
3.3 V
3.0 V
1
S
11
-FREQUENCY S
22
-FREQUENCY
S
21
-FREQUENCY
S
12
-FREQUENCY
S
11
-FREQUENCY
S
22
-FREQUENCY
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm
Pin =
30 dBm,
MARKER 1
f = 2.4 GHz
Pin =
30 dBm,
MARKER 1
f = 2.4 GHz
20
V
CC
= 2.4 V
2.7 V
3.0 V
3.3 V
Pin =
30 dBm,
MARKER 1
f = 2.4 GHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
1
S12 log MAG 5 dB/ REF –
20
dB 1 : –
41.967
dB
20
25
30
35
40
45
50
55
60
65
70
Pin =
30 dBm,
MARKER 1
f = 2.4 GHz
V
CC
= 2.4 V
2.7 V
3.0 V
3.3 V
VCC = 2.4 V
2.7 V
3.0 V
3.3 V
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS 19
µ
PC8178TK
DISCONTINUED
S
11
-FREQUENCY S
12
-FREQUENCY
S
22
-FREQUENCY
S
11
log MAG 2 dB/ REF
0
dB 1 : –
10.156
dB
START 100.000 000 MHz STOP 3 100.000 000 MHz
T
A
= –40°C
+25°C
+85°C
START 100.000 000 MHz STOP 3 100.000 000 MHz
0
–2
–4
–6
–8
–10
–12
–14
–16
–18
–20
0
–2
–4
–6
–8
–10
–12
–14
–16
–18
–20
S
22
log MAG 2 dB/ REF
0
dB 1 : –
12.302
dB
1
1
–40°C
T
A
= +85°C
+25°C
P
in
= 30 dBm, V
CC
= 3.0 V
MARKER 1
f = 2.4 GHz
P
in
= 30 dBm, V
CC
= 3.0 V
MARKER 1
f = 2.4 GHz
S
21
-FREQUENCY
S
21
log MAG 2 dB/ REF
0
dB 1 :
10.851
dB
START 100.000 000 MHz STOP 3 100.000 000 MHz
0
2
4
6
8
10
12
14
16
18
20
1
T
A
= –40°C
+25°C
+85°C
P
in
= 30 dBm, V
CC
= 3.0 V
MARKER 1
f = 2.4 GHz
START 100.000 000 MHz STOP 3 100.000 000 MHz
–20
–25
–30
–35
–40
–45
–50
–55
–60
–65
–70
S
12
log MAG 5 dB/ REF –
20
dB 1 : –
39.14
dB
1
P
in
= 30 dBm, V
CC
= 3.0 V
MARKER 1
f = 2.4 GHz
+85°C
T
A
= –40°C
+25°C
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS
20
µ
PC8178TK
DISCONTINUED
–30
5
10
0
–5
–10
–15
–20
–25
5
10
0
–5
–10
–15
–20
–25
010
–10
–20 –30 010
–10
–20
V
CC
= 3.0 V
3.3 V
2.7 V
2.4 V
f = 2.4 GHz
TA = +85°C
–40°C
+25°C
–20
–30
–30 –20 –10 0
–30 –20 –10 0
–40
–50
–60
–70
–80
–10
0
10
20
–20
–30
–40
–50
–60
–70
–80
–10
0
0
10
20
–30
–20
–30
–40
–50
–60
–70
–80
–10
10
20
0
–20
–30
–40
–50
–60
–70
–80
–10
10
20
OIP3 = 2.1 dBm
OIP
3
= 1.4 dBm
OIP
3
= 2.6 dBm
OIP
3
= 1.0 dBm
–20 –10 0
–30 –20 –10 0
IM3 (des)
IM
3 (des)
IM3 (undes)
IM
3 (undes)
Pout (des)
P
out (des)
Pout (undes)
P
out (undes)
P
out (undes)
IM
3 (des)
IM
3 (undes)
P
out (undes)
P
out (des)
P
out (des)
IM
3 (des)
IM
3 (undes)
f = 2.4 GHz,
V
CC
= 3.0 V
VCC = 3.0 V
f1 = 2 400 MHz
f2 = 2 401 MHz
V
CC
= 2.4 V
f1 = 2 400 MHz
f2 = 2 401 MHz
V
CC
= 2.7 V
f1 = 2 400 MHz
f2 = 2 401 MHz
V
CC
= 3.3 V
f1 = 2 400 MHz
f2 = 2 401 MHz
Output Power P
out
(dBm)
OUTPUT POWER vs. INPUT POWER
Input Power P
in
(dBm)
Output Power P
out
(dBm)
OUTPUT POWER vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM3 vs. INPUT POWER
Input Power P
in
(dBm)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS 21
µ
PC8178TK
DISCONTINUED
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
20
10
0
–30
–40
–50
–60
–70
–80
–10
–20
–30 0
–10
–20
–30 0
–10
–20
–30 0
–10
–20
P
out (undes)
P
out (des)
IM
3 (des)
IM
3 (undes)
OIP
3
= 2.1 dBm
OIP
3
= 1.1 dBm
IM
3 (des)
IM
3 (undes)
P
out (undes)
P
out (des)
IM
3 (des)
IM
3 (undes)
P
out (undes)
P
out (des)
OIP
3
= 2.2 dBm
6.5
6
5.5
5
4.5
42 2.5 3 3.5 4
+25°C
T
A
= +85°C
–40°C
f = 2.4 GHz
V
CC
= 3.0 V
f1 = 2 400 MHz
f2 = 2 401 MHz
V
CC
= 3.0 V
T
A
= –40°C
f1 = 2 400 MHz
f2 = 2 401 MHz
V
CC
= 3.0 V
T
A
= +85°C
f1 = 2 400 MHz
f2 = 2 401 MHz
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM
3
vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM
3
vs. INPUT POWER
Input Power P
in
(dBm)
Output power P
out
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
OUTPUT POWER, IM
3
vs. INPUT POWER
Input Power P
in
(dBm)
3rd Order Intermodulation Distortion IM
3
(dBc)
3RD ORDER INTERMODULATION DISTORTION
vs. OUTPUT POWER OF EACH TONE
Output Power of Each Tone P
out (each)
(dBm)
Noise Figure NF (dB)
NOISE FIGURE vs. SUPPLY VOLTAGE
Supply Voltage V
CC
(V)
0
–10–15 –5
–20–25
0
5
10
15
20
25
30
40
45
50
35
2.4 V
2.7 V
V
CC
= 3.0 V
3.3 V
f1 = 2 400 MHz
f2 = 2 401 MHz
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS
22
µ
PC8178TK
DISCONTINUED
f = 3.0 GHz MATCHING
42
4
32
1
1: 67.34
63.512
1 GHz
2: 34.416
46.209
1.9 GHz
3: 27.732
34.887
2.4 GHz
4: 24.257
25.16
2.1086 pF
START 100.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz STOP 3 100.000 000 MHz
MARKER 4
3 GHz
MARKER 4
3 GHz
1
3
1: 100.98
350.69
1 GHz
2: 61.047
216.37
1.9 GHz
3: 45.648
180.84
2.4 GHz
4: 29.031
149.79
354.18 fF
S
11
-FREQUENCY S
22
-FREQUENCY
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm,
T
A
= +25
°
C
(at L loaded)
V
CC
= 3.0 V,
I
CC
= 2.11 mA
P
in
=
30 dBm,
T
A
= +25
°
C
(at L loaded)
Remark The graphs indicate nominal characteristics.
Data Sheet PU10063EJ02V0DS 23
µ
PC8178TK
DISCONTINUED
PACKAGE DIMENSIONS
6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm)
0.48±0.050.48±0.05
1.5±0.1
1.3±0.05
1.1±0.1
0.55±0.03
0.11+0.1
–0.05 0.16±0.05
0.9±0.10.2±0.1
(Bottom View)
(Top View)
Data Sheet PU10063EJ02V0DS
24
µ
PC8178TK
DISCONTINUED
NOTE ON CORRECT USE
(1) Observe precautions for handling because of electro-static sensitive devices.
(2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation).
All the ground pins must be connected together with wide ground pattern to decrease impedance difference.
(3) The bypass capacitor should be attached to VCC line.
(4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values
should be adjusted for applied frequency to match impedance to next stage.
(5) The DC capacitor must be attached to input pin.
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method Soldering Conditions Condition Symbol
Infrared Reflow Peak temperature (package surface temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Time at temperature of 220°C or higher : 60 seconds or less
Preheating time at 120 to 180°C : 120±30 seconds
Maximum number of reflow processes : 3 times
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
IR260
Wave Soldering Peak temperature (molten solder temperature) : 260°C or below
Time at peak temperature : 10 seconds or less
Preheating temperature (package surface temperature) : 120°C or below
Maximum number of flow processes : 1 time
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
WS260
Partial Heating Peak temperature (terminal temperature) : 350°C or below
Soldering time (per side of device) : 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below
HS350
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet PU10063EJ02V0DS 25
µ
PC8178TK
DISCONTINUED
NOTICE
1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and
application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California
Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits,
software, or information.
2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does
not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property
rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express,
implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas
Electronics or others.
4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern
Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modication, copy
or otherwise misappropriation of Renesas Electronics product.
5. Renesas Electronics products are classied according to the following two quality grades: “Standard” and “High Quality”. The recommended applications
for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; ofce equipment; communications
equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and
industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); trafc control systems; anti-disaster systems; anti-crime
systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct
threat to human life or bodily injury (articial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear
reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular
application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas
Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product
for which the product is not intended by California Eastern Laboratories or Renesas Electronics.
6. You should use the Renesas Electronics products described in this document within the range specied by California Eastern Laboratories, especially with
respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product
characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products
beyond such specied ranges.
7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specic characteristics such as
the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation
resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by
re in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy,
re control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of
microcomputer software alone is very difcult, please evaluate the safety of the nal products or systems manufactured by you.
8. Please contact a California Eastern Laboratories sales ofce for details as to environmental matters such as the environmental compatibility of each Renesas
Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of
controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for
damages or losses occurring as a result of your noncompliance with applicable laws and regulations.
9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited
under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document
for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When
exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and
regulations and follow the procedures required by such laws and regulations.
10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics
product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and
Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.
11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.
12. Please contact a California Eastern Laboratories sales ofce if you have any questions regarding the information contained in this document or Renesas
Electronics products, or if you have any other inquiries.
NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.
NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
NOTE 3: Products and product information are subject to change without notice.
CEL Headquarters 4590 Patrick Henry Drive, Santa Clara, CA 95054 Phone (408) 919-2500 www.cel.com
For a complete list of sales ofces, representatives and distributors,
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