DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC8178TK ED SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 wide band matched IC. PC8178TK adopts 6-pin lead-less minimold package using same chip as the conventional PC8178TB in 6-pin super minimold. TK suffix IC which is smaller package than TB suffix IC contributes to reduce mounting space by 50 %. FEATURES * Low current consumption * Supply voltage * Excellent isolation IN U This IC is manufactured using our 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. : ICC = 1.9 mA TYP. @ VCC = 3.0 V : VCC = 2.4 to 3.3 V : ISL = 40 dB TYP. @ f = 1.0 GHz ISL = 41 dB TYP. @ f = 1.9 GHz ISL = 42 dB TYP. @ f = 2.4 GHz : GP = 11.0 dB TYP. @ f = 1.0 GHz GP = 11.0 dB TYP. @ f = 1.9 GHz O NT * Power gain GP = 11.0 dB TYP. @ f = 2.4 GHz * Gain 1 dB compression output power : PO (1 dB) = -5.5 dBm TYP. @ f = 1.0 GHz PO (1 dB) = -8.0 dBm TYP. @ f = 1.9 GHz PO (1 dB) = -8.0 dBm TYP. @ f = 2.4 GHz * Operating frequency : 0.1 to 2.4 GHz (Output port LC matching) * Light weight : 3 mg (Standard value) * High-density surface mounting APPLICAION : 6-pin lead-less minimold package (1.5 x 1.3 x 0.55 mm) DI SC * Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PU10063EJ02V0DS (2nd edition) Date Published March 2005 CP(K) The mark shows major revised points. PC8178TK ORDERING INFORMATION Part Number PC8178TK-E2 Order Number PC8178TK-E2-A Package Marking 6-pin lead-less minimold 6B (1511) (Pb-Free) Supplying Form * Embossed tape 8 mm wide Note * Pin 1, 2, 3 face the perforation side of the tape ED * Qty 5 kpcs/reel Note With regards to terminal solder (the solder contains lead) plated products (conventionally plated), contact your nearby sales office. Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: PC8178TK-A Parameter 1.0 GHz output port 1.66 GHz output port 1.9 GHz output port 2.4 GHz output port matching frequency matching frequency matching frequency matching frequency ICC GP ISL PO(1dB) GP (mA) (dB) (dB) (dBm) (dB) PC8178TB 1.9 11.0 39.0 -4.0 - PC8178TK 1.9 11.0 40.0 -5.5 - PC8179TB 4.0 13.5 44.0 +3.0 - PC8128TB 2.8 12.5 39.0 -4.0 PC8151TB 4.2 12.5 38.0 PC8152TB 5.6 23.0 40.0 ISL PO(1dB) GP ISL PO(1dB) GP ISL PO(1dB) (dBm) (dB) (dB) (dBm) (dB) (dB) (dBm) - - 11.5 40.0 -7.0 11.5 38.0 -7.5 C3B - - 11.0 41.0 -8.0 11.0 42.0 -8.0 6B - - 15.5 42.0 +1.5 15.5 41.0 +1.0 C3C 13.0 39.0 -4.0 13.0 37.0 -4.0 - - - C2P +2.5 15.0 36.0 +1.5 15.0 34.0 +0.5 - - - C2U -4.5 19.5 38.0 -8.5 17.5 35.0 -8.5 - - - C2V Remarks 1. Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. DI SC 2. To know the associated product, please refer to each latest data sheet. 2 Marking (dB) O NT Part No. IN U PRODUCT LINE-UP (TA = +25C, VCC = Vout = 3.0 V, ZS = ZL = 50 ) Data Sheet PU10063EJ02V0DS PC8178TK SYSTEM APPLICATION EXAMPLE Location examples in digital cellular Low Noise Tr. RX I Q SW /N ED DEMOD. PLL PLL I TX IN U 0 PA 90 These ICs can be added to your system around Q parts, when you need more isolation or gain. The application DI SC O NT herein, however, shows only examples, therefore the application can depend on your kit evaluation. Data Sheet PU10063EJ02V0DS 3 PC8178TK PIN CONNECTIONS 2 6B 1 (Bottom View) 3 6 6 1 5 5 2 4 4 3 Pin Pin No. Name 1 INPUT Applied Pin Voltage (V) Voltage Note (V) - 0.90 Pin Name 1 INPUT 2 GND 3 GND 4 OUTPUT 5 GND 6 VCC IN U PIN EXPLANATION Pin No. ED (Top View) Function and Applications Internal Equivalent Circuit Signal input pin. A internal matching circuit, configured with resisters, enables 50 connection over a wide band. This pin must be coupled to signal source with capacitor for DC cut. GND 0 - Ground pin. This pin should be O NT 2 6 connected to system ground with 3 minimum inductance. Ground 5 4 pattern on the board should be formed as wide as possible. All the ground pins must be con- nected together with wide ground pattern to decrease impedance defference. OUTPUT Voltage - 6 VCC Signal output pin. This pin is de- as same signed as collector output. Due to as VCC the high impedance output, this pin through should be externally equipped with external LC matching circuit to next stage. inductor For L, a size 1 005 chip inductor DI SC 4 2.4 to 3.3 - can be chosen. Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. Note Pin voltage is measured at VCC = 3.0 V. 4 Data Sheet PU10063EJ02V0DS 2 3 1 5 PC8178TK ABSOLUTE MAXIMUM RATINGS Parameter Symbol Test Conditions Ratings Unit Supply Voltage VCC TA = +25C, Pin 4, Pin 6 3.6 V Circuit Current ICC TA = +25C 15 mA Power Dissipation PD TA = +85C 232 mW Operating Ambient Temperature TA -40 to +85 C Storage Temperature Tstg -55 to +150 C Input Power Pin +5 dBm ED Note TA = +25C RECOMMENDED OPERATING RANGE Parameter Supply Voltage Symbol MIN. VCC 2.4 IN U Note Mounted on double-sided copper-clad 50 x 50 x 1.6 mm epoxy glass PWB TYP. MAX. Unit Remarks 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA -40 +25 +85 C O NT ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25C, VCC = Vout = 3.0 V, ZS = ZL = 50 , at LC matched frequency) Parameter Circuit Current Power Gain Test Conditions MIN. TYP. MAX. Unit ICC No signal 1.4 1.9 2.4 mA GP f = 1.0 GHz, Pin = -30 dBm 9.0 11.0 13.0 dB f = 1.9 GHz, Pin = -30 dBm 9.0 11.0 13.5 f = 2.4 GHz, Pin = -30 dBm 9.0 11.0 13.5 f = 1.0 GHz, Pin = -30 dBm 35.0 40.0 - f = 1.9 GHz, Pin = -30 dBm 36.0 41.0 - f = 2.4 GHz, Pin = -30 dBm 37.0 42.0 - ISL PO(1 dB) f = 1.0 GHz -8.0 -5.5 - DI SC Isolation Symbol f = 1.9 GHz -11.0 -8.0 - f = 2.4 GHz -11.5 -8.0 - f = 1.0 GHz - 5.5 7.0 f = 1.9 GHz - 5.5 7.0 f = 2.4 GHz - 5.5 7.0 f = 1.0 GHz, Pin = -30 dBm 4.0 7.0 - f = 1.9 GHz, Pin = -30 dBm 5.0 8.0 - f = 2.4 GHz, Pin = -30 dBm 6.5 9.5 - Gain 1 dB Compression Output Power Noise Figure Input Return Loss NF RLin Data Sheet PU10063EJ02V0DS dB dBm dB dB 5 PC8178TK TEST CIRCUITS <1> f = 1.0 GHz Output port matching circuit C6 C5 VCC ED C4 L1 6 C1 C2 4 1 IN C3 OUT DUT IN U Strip Line : 1 mm Strip Line : 5 mm 2, 3, 5 <2> f = 1.9 GHz Output port matching circuit C7 C5 VCC C4 O NT C6 L1 6 C1 IN C2 4 1 C3 OUT DUT Strip Line : 7 mm 2, 3, 5 DI SC <3> f = 2.4 GHz C5 C4 Output port matching circuit C6 VCC C3 L2 6 C1 IN 1 4 C2 L1 OUT DUT Strip Line : 4 mm 2, 3, 5 Strip Line : 3 mm 6 Data Sheet PU10063EJ02V0DS PC8178TK ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD <1> f = 1.0 GHz ED VCC C6 IN VCC C5 C4 Top View OUT 6B L1 C1 C3 IN U C2 Mounting direction PC8178TK O NT (1) 42 x 35 x 0.4 mm polyimide board, double-sided copper clad (2) Back side: GND pattern (3) Gold plated on pattern (4) {: Through holes COMPONENT LIST Form Symbol Value Type code Maker C1, C3 1 000 pF GRM40CH102J50PT murata C2 0.75 pF GRM39CKR75C50PT murata C4 20 pF GRM39CH200J50PT murata C5 10 pF GRM39CH100D50PT murata Feed-though Capacitor C6 1 000 pF DFT301-801 x 7R102S50 murata Chip inductor L1 12 nH LL1608-FH12N TOKO DI SC Chip capacitor Data Sheet PU10063EJ02V0DS 7 PC8178TK <2> f = 1.9 GHz C5 VCC C7 IN Top View OUT C6 6B L1 C1 ED VCC C4 C2 IN U Mounting direction C3 PC8178TK (1) 42 x 35 x 0.4 mm polyimide board, double-sided copper clad (2) Back side: GND pattern (4) {: O NT (3) Gold plated on pattern Through holes COMPONENT LIST Form Symbol Value Type code Maker C1, C3, C5, C6 1 000 pF GRM40CH102J50PT murata C2 0.5 pF GRM39CKR5C50PT murata C4 8 pF GRM39CH080D50PT murata Feed-though Capacitor C7 1 000 pF DFT301-801 x 7R102S50 murata Chip inductor L1 2.7 nH LL1608-FH2N7S TOKO DI SC Chip capacitor 8 Data Sheet PU10063EJ02V0DS PC8178TK <3> f = 2.4 GHz VCC C4 C6 IN ED VCC OUT Top View C5 C3 6B L2 C1 L1 C2 IN U Mounting direction PC8178TK (1) 42 x 35 x 0.4 mm polyimide board, double-sided copper clad (2) Back side: GND pattern (4) {: O NT (3) Gold plated on pattern Through holes COMPONENT LIST Form Symbol Value Type code Maker C1, C2, C4, C5 1 000 pF GRM40CH102J50PT murata C3 10 pF GRM39CH100D50PT murata Feed-though Capacitor C6 1 000 pF DFT301-801 x 7R102S50 murata Chip inductor L1 2.7 nH LL1608-FH2N7S TOKO L2 1.8 nH LL1608-FH1N8S TOKO DI SC Chip capacitor Data Sheet PU10063EJ02V0DS 9 PC8178TK TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified) CIRCUIT CURRENT vs. SUPPLY VOLTAGE 2.5 ED Circuit Current ICC (mA) 3.0 2.0 1.5 TA = +25C 1.0 +50C +85C 0.5 -40C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Supply Voltage VCC (V) 4.0 IN U -20C 0 DI SC O NT Remark The graph indicates nominal characteristics. 10 Data Sheet PU10063EJ02V0DS PC8178TK f = 1.0 GHz MATCHING S22-FREQUENCY S11-FREQUENCY 1: 54.049 -12.43 12.804 pF 1: 63.219 -64.27 2.4764 pF MARKER 1 1.0 GHz ED MARKER 1 1.0 GHz 1 1 VCC = 3.0 V, ICC = 2.11 mA Pin = -30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz -4 2 dB/ REF 0 dB 1 : -6.9156 dB Pin = -30 dBm, MARKER 1 f = 1.0 GHz VCC = 2.4 V MAG Pin = -30 dBm, MARKER 1 f = 1.0 GHz -35 1 3.3 V -16 VCC = 2.4 V 2.7 V 3.0 V 3.3 V -50 2.7 V -14 -55 -60 -65 -18 -20 START 100.000 000 MHz STOP 3 100.000 000 MHz -70 START 100.000 000 MHz S21-FREQUENCY 2 dB/ REF 0 dB 1 : 11.235 dB DI SC MAG Pin = -30 dBm, MARKER 1 f = 1.0 GHz 18 S22 log 0 -4 14 -6 1 2 dB/ REF 0 dB 1 : -16.86 dB VCC = 2.4 V 2.7 V 3.0 V 3.3 V -10 -12 VCC = 3.3 V 3.0 V -14 -16 2.7 V 2 2.4 V 0 START 100.000 000 MHz S22-FREQUENCY -8 10 4 MAG STOP 3 100.000 000 MHz -2 16 6 1 : -40.104 dB -45 -12 8 REF -20 dB -40 -10 12 STOP 3 100.000 000 MHz -30 3.0 V -8 S21 log 20 5 dB/ -25 1 -6 S12 log -20 O NT -2 MAG START 100.000 000 MHz S12-FREQUENCY S11-FREQUENCY S11 log 0 IN U VCC = 3.0 V, ICC = 2.11 mA Pin = -30 dBm 1 -18 STOP 3 100.000 000 MHz -20 START 100.000 000 MHz Pin = -30 dBm, MARKER 1 f = 1.0 GHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10063EJ02V0DS 11 PC8178TK S11-FREQUENCY MAG 2 dB/ REF 0 dB S12 log -20 1 : -6.8297 dB -2 -40 -10 -45 -55 -16 Pin = -30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz STOP 3 100.000 000 MHz 2 dB/ REF 0 dB 1 : 11.053 dB Pin = -30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz 18 2 REF 0 dB 1 : -13.758 dB TA = -40C +25C +85C -10 -12 TA = -40C 1 -14 +25C -16 -18 STOP 3 100.000 000 MHz Pin = -30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz -20 START 100.000 000 MHz DI SC Remark The graphs indicate nominal characteristics. 12 2 dB/ -8 1 +85C 0 START 100.000 000 MHz STOP 3 100.000 000 MHz -2 O NT 4 MAG -6 14 6 S22 log 0 -4 16 8 +85C -70 START 100.000 000 MHz S22-FREQUENCY S21-FREQUENCY MAG -65 IN U -20 START 100.000 000 MHz TA = -40C +25C -60 -18 12 1 -50 +25C +85C -14 1 : -39.127 dB Pin = -30 dBm, VCC = 3.0 V MARKER 1 f = 1.0 GHz -35 -8 -12 REF -20 dB -30 TA = -40C 1 -6 10 5 dB/ -25 -4 S21 log 20 MAG ED S11 log 0 S12-FREQUENCY Data Sheet PU10063EJ02V0DS STOP 3 100.000 000 MHz PC8178TK OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 10 10 5 5 3.0 V 2.4 V -5 2.7 V -10 -15 0 +85C -5 -10 -15 -20 -20 f = 1.0 GHz 0 10 20 OIP3 = 3.5 dBm Pout (undes) -10 -20 Pout (des) -30 IM3 (undes) -40 IM3 (des) -50 -60 -70 -80 -30 -20 20 VCC = 2.4 V f1 = 1 000 MHz f2 = 1 001 MHz -10 0 0 Pout (undes) -10 -20 -30 Pout (des) -40 IM3 (des) IM3 (undes) -50 -60 -70 -80 -30 -20 VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz 0 -10 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OIP3 = 5.0 dBm DI SC Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER 10 10 OIP3 = 4.2 dBm 10 Pout (undes) 0 -10 -20 Pout (des) -30 IM3 (des) -40 IM3 (undes) -50 -60 -70 -80 -30 Input Power Pin (dBm) 20 0 OUTPUT POWER, IM3 vs. INPUT POWER O NT Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER 0 -10 -20 Input Power Pin (dBm) Input Power Pin (dBm) 10 VCC = 3.0 V f = 1.0 GHz IN U -10 -20 -25 -30 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) -25 -30 ED VCC = 3.3 V 0 Output Power Pout (dBm) Output Power Pout (dBm) TA = -40C +25C -20 VCC = 2.7 V f1 = 1 000 MHz f2 = 1 001 MHz -10 0 Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 5.3 dBm 0 Pout (undes) -10 -20 Pout (des) -30 -40 IM3 (undes) -50 -60 -70 -80 -30 Input Power Pin (dBm) IM3 (des) -20 VCC = 3.3 V f1 = 1 000 MHz f2 = 1 001 MHz -10 0 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10063EJ02V0DS 13 10 OIP3 = 3.0 dBm Pout (undes) 0 -10 -20 Pout (des) -30 -40 IM3 (des) IM3 (undes) -50 VCC = 3.0 V TA = -40C f1 = 1 000 MHz f2 = 1 001 MHz -60 -70 -80 -30 -25 -20 -15 -10 -5 0 OIP3 = 5.0 dBm Pout (undes) -10 -20 Pout (des) IM3 (des) -40 IM3 (undes) -50 VCC = 3.0 V TA = +85C f1 = 1 000 MHz f2 = 1 001 MHz -60 -70 -80 -30 OIP3 = 5.0 dBm Pout (undes) 0 -10 -20 Pout (des) -30 -40 -25 -20 -15 IM3 (undes) -50 -60 -70 -80 -30 VCC = 3.0 V 50 3.3 V 40 2.4 V 2.7 V 30 0 -5 -10 20 10 f1 = 1 000 MHz f2 = 1 001 MHz 0 -25 DI SC Noise Figure NF (dB) TA = +85C +25C 5 -40C 4.5 f = 1.0 GHz 2.5 3 3.5 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 14 -20 -15 -10 -5 Output Power of Each Tone Pout (each) (dBm) 6 4 2 -20 60 NOISE FIGURE vs. SUPPLY VOLTAGE 5.5 VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz -10 0 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE Input Power Pin (dBm) 6.5 IM3 (des) IN U 20 -30 10 O NT Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER 0 20 Input Power Pin (dBm) Input Power Pin (dBm) 10 OUTPUT POWER, IM3 vs. INPUT POWER ED 20 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) PC8178TK Data Sheet PU10063EJ02V0DS 0 PC8178TK f = 1.9 GHz MATCHING S22-FREQUENCY S11-FREQUENCY 1: 33.535 -44.393 1.8869 pF 1: 43.529 -16.648 5.0314 pF MARKER 1 1.9 GHz ED MARKER 1 1.9 GHz 1 1 VCC = 3.0 V, ICC = 2.11 mA Pin = -30 dBm START 100.000 000 MHz STOP 3 100.000 000 MHz S11-FREQUENCY S11 log 0 MAG 2 dB/ REF 0 dB 1 : -8.4012 dB -4 VCC = 2.4 V O NT -8 VCC = 2.4 V 2.7 V 3.0 V 3.3 V 1 -40 3.0 V -12 -50 3.3 V -14 -55 -60 -16 Pin = -30 dBm, MARKER 1 f = 1.9 GHz -18 -20 START 100.000 000 MHz -65 STOP 3 100.000 000 MHz -70 START 100.000 000 MHz DI SC S21-FREQUENCY S21 log MAG 2 dB/ REF 0 dB 1 : 11.5 dB Pin = -30 dBm, MARKER 1 f = 1.9 GHz 18 VCC = 3.0 V 12 1 2 dB/ REF 0 dB 1 : -15.578 dB -2 -8 VCC = 2.4 V 2.7 V 3.0 V 3.3 V -10 -12 2.4 V 6 -14 4 -16 2 0 START 100.000 000 MHz MAG S22-FREQUENCY -6 3.3 V 10 8 S22 log 0 STOP 3 100.000 000 MHz -4 16 14 1 : -41.705 dB -45 -10 20 STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF -20 dB -20 -25 Pin = -30 dBm, MARKER 1 f = 1.9 GHz -30 -35 2.7 V 1 START 100.000 000 MHz S12-FREQUENCY -2 -6 IN U VCC = 3.0 V, ICC = 2.11 mA Pin = -30 dBm 2.7 V STOP 3 100.000 000 MHz 1 -18 Pin = -30 dBm, MARKER 1 f = 1.9 GHz -20 START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10063EJ02V0DS 15 PC8178TK S12-FREQUENCY S11-FREQUENCY MAG 2 dB/ REF 0 dB S12 log MAG 5 dB/ REF -20 dB 1 : -40.84 dB -20 Pin = -30 dBm, VCC = 3.0 V -25 MARKER 1 f = 1.9 GHz TA = -40C -30 1 : -8.2405 dB -2 -4 TA = -40C -6 +25C -35 1 -8 -10 -45 -12 -50 +85C -14 -55 -16 -60 +85C 12 8 6 4 2 -65 -70 START 100.000 000 MHz 1 : 11.553 dB S22 log 0 STOP 3 100.000 000 MHz 2 dB/ REF 0 dB 1 : -14.437 dB -2 -4 -6 1 TA = -40C 0 START 100.000 000 MHz -8 -12 +25C -14 -16 STOP 3 100.000 000 MHz TA = -40C +25C +85C -10 1 Pin = -30 dBm, -18 VCC = 3.0 V, -20 MARKER 1 f = 1.9 GHz START 100.000 000 MHz STOP 3 100.000 000 MHz DI SC Remark The graphs indicate nominal characteristics. 16 MAG O NT 10 +85C S22-FREQUENCY S21-FREQUENCY S21 log MAG 2 dB/ REF 0 dB 20 Pin = -30 dBm, VCC = 3.0 V 18 MARKER 1 f = 1.9 GHz 16 +25C IN U Pin = -30 dBm, VCC = 3.0 V -18 MARKER 1 f = 1.9 GHz -20 START 100.000 000 MHz STOP 3 100.000 000 MHz 14 1 -40 ED S11 log 0 Data Sheet PU10063EJ02V0DS PC8178TK OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 10 10 5 5 VCC = 3.3 V 0 3.0 V 2.7 V -5 2.4 V -10 -15 -20 0 -10 10 -15 +85C 20 OIP3 = 0.8 dBm Pout (undes) 0 IM3 (des) -20 -40 IM3 (undes) -50 -60 -70 -80 -30 OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 1.6 dBm Pout (undes) 0 -10 -20 VCC = 2.4 V f1 = 1 900 MHz f2 = 1 901 MHz -10 0 IM3 (des) -20 Pout (des) -30 O NT Pout (des) -30 10 Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER -10 0 IN U Input Power Pin (dBm) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) -25 -30 -40 IM3 (undes) -50 -60 -70 -80 -30 -20 VCC = 2.7 V f1 = 1 900 MHz f2 = 1 901 MHz 0 -10 Input Power Pin (dBm) Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 DI SC 10 OIP3 = 2.3 dBm 0 Pout (undes) IM3 (des) -10 -20 -30 Pout (des) -40 IM3 (undes) -50 -60 -70 -80 -30 -20 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz -10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) -10 f = 1.9 GHz, VCC = 3.0 V -25 -10 -30 -20 f = 1.9 GHz Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) +25C -5 -20 -20 10 0 ED Output Power Pout (dBm) Output Power Pout (dBm) TA = -40C 20 10 OIP3 = 2.5 dBm 0 Pout (undes) IM3 (des) -10 -20 Pout (des) -30 -40 IM3 (undes) -50 -60 -70 -80 -30 Input Power Pin (dBm) -20 VCC = 3.3 V f1 = 1 900 MHz f2 = 1 901 MHz 0 -10 Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10063EJ02V0DS 17 10 OIP3 = 2.3 dBm Pout (undes) 0 -10 -20 Pout (des) -30 -40 IM3 (des) IM3 (undes) -50 VCC = 3.0 V TA = -40C f1 = 1 900 MHz f2 = 1 901 MHz -60 -70 -80 -30 -20 0 -10 OIP3 = 2.1 dBm Pout (undes) -10 -20 -40 -50 -60 -70 -80 -30 Pout (des) OIP3 = 2.3 dBm -20 -40 IM3 (des) IM3 (undes) VCC = 3.0 V TA = +85C f1 = 1 900 MHz f2 = 1 901 MHz -10 -20 -60 -70 -80 -30 0 DI SC 5.5 -20 45 VCC = 3.0 V 3.3 V 40 35 2.4 V 30 2.7 V 25 20 15 10 5 0 -25 -40C 3 3.5 -20 -15 f1 = 1 900 MHz f2 = 1 901 MHz 0 -10 -5 Output Power of Each Tone Pout (each) (dBm) 5 f = 1.9 GHz 4 2 2.5 VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz -10 0 50 +25C 4.5 IM3 (des) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE TA = +85C 6 Noise Figure NF (dB) IM3 (undes) -50 NOISE FIGURE vs. SUPPLY VOLTAGE 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 18 Pout (des) -30 Input Power Pin (dBm) 6.5 Pout (undes) 0 -10 IN U 20 -30 10 O NT Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER 0 20 Input Power Pin (dBm) Input Power Pin (dBm) 10 OUTPUT POWER, IM3 vs. INPUT POWER ED 20 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) PC8178TK Data Sheet PU10063EJ02V0DS PC8178TK f = 2.4 GHz MATCHING S22-FREQUENCY S11-FREQUENCY 1: 47.047 13.205 875.69 pH 1: 26.945 -32.572 2.0359 pF ED MARKER 1 2.4 GHz 1 MARKER 1 2.4 GHz 1 VCC = 3.0 V, ICC = 2.11 mA Pin = -30 dBm STOP 3 100.000 000 MHz MAG 2 dB/ REF 0 dB 1 : -10.022 dB -2 -4 -6 -10 -12 -14 -16 -18 -35 VCC = 2.4 V -40 1 3.0 V -60 Pin = -30 dBm, MARKER 1 f = 2.4 GHz -65 STOP 3 100.000 000 MHz 1 : 11.623 dB DI SC VCC = 3.3 V 12 10 -70 START 100.000 000 MHz S22 log 0 MAG STOP 3 100.000 000 MHz S22-FREQUENCY 2 dB/ REF 0 dB 1 : -16.424 dB -4 3.0 V -6 1 -8 2.4 V -10 -12 VCC = 2.4 V 2.7 V 3.0 V 3.3 V -14 2.7 V -16 4 2 0 START 100.000 000 MHz VCC = 2.4 V 2.7 V 3.0 V 3.3 V -2 8 6 1 -55 S21-FREQUENCY 14 VCC = 2.4 V 2.7 V 3.0 V 3.3 V -50 2.7 V S21 log MAG 2 dB/ REF 0 dB 20 Pin = -30 dBm, 18 MARKER 1 f = 2.4 GHz 16 1 : -41.967 dB -45 3.3 V -20 START 100.000 000 MHz STOP 3 100.000 000 MHz S12 log MAG 5 dB/ REF -20 dB -20 -25 Pin = -30 dBm, MARKER 1 f = 2.4 GHz -30 O NT -8 START 100.000 000 MHz S12-FREQUENCY S11-FREQUENCY S11 log 0 IN U START 100.000 000 MHz VCC = 3.0 V, ICC = 2.11 mA Pin = -30 dBm -18 STOP 3 100.000 000 MHz 1 Pin = -30 dBm, MARKER 1 f = 2.4 GHz -20 START 100.000 000 MHz STOP 3 100.000 000 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10063EJ02V0DS 19 PC8178TK S11-FREQUENCY MAG 2 dB/ REF 0 dB S12-FREQUENCY 1 : -10.156 dB S12 log MAG 5 dB/ REF -20 dB 1 : -39.14 dB -20 -25 Pin = -30 dBm, VCC = 3.0 V MARKER 1 f = 2.4 GHz TA = -40C -30 +25C -35 1 -2 -4 TA = -40C -6 +25C -8 -40 1 -10 -45 -12 -50 +85C -14 -55 -16 -60 S21-FREQUENCY 1 : 10.851 dB 12 1 4 2 S22 log 0 0 START 100.000 000 MHz +85C STOP 3 100.000 000 MHz 2 dB/ REF 0 dB 1 : -12.302 dB TA = +85C -2 -4 -6 -8 -10 +25C -12 -14 +25C 1 -40C -16 +85C STOP 3 100.000 000 MHz -18 Pin = -30 dBm, VCC = 3.0 V MARKER 1 f = 2.4 GHz -20 START 100.000 000 MHz STOP 3 100.000 000 MHz DI SC Remark The graphs indicate nominal characteristics. 20 MAG O NT 6 -70 START 100.000 000 MHz S22-FREQUENCY S21 log MAG 2 dB/ REF 0 dB 20 Pin = -30 dBm, VCC = 3.0 V 18 MARKER 1 f = 2.4 GHz 16 TA = -40C 14 8 -65 IN U -18 Pin = -30 dBm, VCC = 3.0 V MARKER 1 f = 2.4 GHz -20 START 100.000 000 MHz STOP 3 100.000 000 MHz 10 ED S11 log 0 Data Sheet PU10063EJ02V0DS PC8178TK OUTPUT POWER vs. INPUT POWER OUTPUT POWER vs. INPUT POWER 10 10 5 0 -5 2.7 V -10 2.4 V -15 -20 0 TA = +85C -5 -40C -10 -15 +25C -20 f = 2.4 GHz -10 -20 0 10 OIP3 = 1.0 dBm Pout (undes) 0 -10 IM3 (undes) -20 -40 IM3 (des) -50 -60 -70 -80 -30 OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 1.4 dBm Pout (undes) 0 -10 IM3 (undes) -20 Pout (des) -30 O NT Pout (des) -30 VCC = 2.4 V f1 = 2 400 MHz f2 = 2 401 MHz -20 -10 -10 -20 IN U 10 f = 2.4 GHz, VCC = 3.0 V 0 10 Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 0 IM3 (des) -40 -50 -60 VCC = 2.7 V f1 = 2 400 MHz f2 = 2 401 MHz -70 -80 -30 -20 -10 0 Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER OUTPUT POWER, IM3 vs. INPUT POWER 20 10 OIP3 = 2.1 dBm 0 Pout (undes) -10 IM3 (undes) -20 -30 Pout (des) IM3 (des) -40 -50 -60 -70 -80 -30 -20 VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz -10 0 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Input Power Pin (dBm) DI SC Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Input Power Pin (dBm) 20 -25 -30 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) -25 -30 ED VCC = 3.0 V 3.3 V Output Power Pout (dBm) Output Power Pout (dBm) 5 20 10 OIP3 = 2.6 dBm 0 Pout (undes) -10 IM3 (undes) -20 -30 Pout (des) IM3 (des) -40 -50 -60 -70 -80 -30 -20 VCC = 3.3 V f1 = 2 400 MHz f2 = 2 401 MHz -10 0 Input Power Pin (dBm) Input Power Pin (dBm) Remark The graphs indicate nominal characteristics. Data Sheet PU10063EJ02V0DS 21 10 OIP3 = 1.1 dBm Pout (undes) 0 -10 Pout (des) IM3 (undes) -20 -30 IM3 (des) -40 -50 VCC = 3.0 V TA = -40C f1 = 2 400 MHz f2 = 2 401 MHz -60 -70 -80 -30 -20 -10 0 OIP3 = 2.2 dBm Pout (undes) -10 Pout (des) -20 -30 IM3 (undes) -40 IM3 (des) -50 VCC = 3.0 V TA = +85C f1 = 2 400 MHz f2 = 2 401 MHz -60 -70 -80 -30 -10 -20 -30 -40 -60 -70 -80 -30 -10 50 45 40 35 0 DI SC Noise Figure NF (dB) 2.7 V 25 20 15 10 f1 = 2 400 MHz f2 = 2 401 MHz 5 0 -25 -20 -15 -10 -5 Output Power of Each Tone Pout (each) (dBm) +25C 5.5 5 -40C 4.5 f = 2.4 GHz 3.5 VCC = 3.0 V 3.3 V 2.4 V 30 6 3 -20 VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz -10 0 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE TA = +85C 2.5 IM3 (des) IM3 (undes) -50 NOISE FIGURE vs. SUPPLY VOLTAGE 6.5 4 Supply Voltage VCC (V) Remark The graphs indicate nominal characteristics. 22 Pout (des) -20 Input Power Pin (dBm) 4 2 Pout (undes) 0 IN U 20 0 OIP3 = 2.1 dBm Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 10 10 O NT Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) Input Power Pin (dBm) OUTPUT POWER, IM3 vs. INPUT POWER 20 ED 20 Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) OUTPUT POWER, IM3 vs. INPUT POWER 3rd Order Intermodulation Distortion IM3 (dBc) Output power Pout (dBm) 3rd Order Intermodulation Distortion IM3 (dBc) PC8178TK Data Sheet PU10063EJ02V0DS 0 PC8178TK f = 3.0 GHz MATCHING S22-FREQUENCY S11-FREQUENCY 1: 100.98 1 GHz 2: 61.047 1.9 GHz 3: 45.648 2.4 GHz 4: 29.031 354.18 fF MARKER 4 3 GHz 1 3 2 START 100.000 000 MHz -216.37 -180.84 -149.79 2 4 1 VCC = 3.0 V, ICC = 2.11 mA 3 Pin = -30 dBm, TA = +25C (at L loaded) VCC = 3.0 V, ICC = 2.11 mA Pin = -30 dBm, TA = +25C (at L loaded) STOP 3 100.000 000 MHz MARKER 4 3 GHz IN U 4 -350.69 ED 1: 67.34 -63.512 1 GHz 2: 34.416 -46.209 1.9 GHz 3: 27.732 -34.887 2.4 GHz 4: 24.257 -25.16 2.1086 pF START 100.000 000 MHz STOP 3 100.000 000 MHz DI SC O NT Remark The graphs indicate nominal characteristics. Data Sheet PU10063EJ02V0DS 23 PC8178TK PACKAGE DIMENSIONS 6-PIN LEAD-LESS MINIMOLD (1511) (UNIT: mm) 0.160.05 1.50.1 0.480.05 0.480.05 0.20.1 0.11+0.1 -0.05 DI SC O NT 0.550.03 1.30.05 24 0.90.1 IN U 1.10.1 ED (Bottom View) (Top View) Data Sheet PU10063EJ02V0DS PC8178TK NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. ED (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Infrared Reflow Wave Soldering Soldering Conditions Condition Symbol IN U Soldering Method Peak temperature (package surface temperature) : 260C or below Time at peak temperature : 10 seconds or less Time at temperature of 220C or higher : 60 seconds or less Preheating time at 120 to 180C : 12030 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (molten solder temperature) : 260C or below Time at peak temperature : 10 seconds or less IR260 WS260 Partial Heating O NT Preheating temperature (package surface temperature) : 120C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 DI SC Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10063EJ02V0DS 25 NOTICE Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas Electronics or others. 4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product. 5. Renesas Electronics products are classified according to the following two quality grades: "Standard" and "High Quality". The recommended applications for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard": Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. "High Quality": Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. 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Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you. 8. 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You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. 10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products. 11. 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