© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ100 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 110 A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 250 A
IAR TC= 25°C60A
EAR TC= 25°C40mJ
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 480 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
FCMounting Force (PLUS220) 11..65 / 2.5..15 N/lb
Weight TO-247 6 g
PLUS220 4 g
G = Gate D = Drain
S = Source TAB = Drain
DS99212E(01/06)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 100 V
VGS(th) VDS = VGS, ID = 4 mA 2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 15 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM HiPerFET
Power MOSFET
VDSS = 100 V
ID25 =110A
RDS(on) ≤≤
≤≤
≤15 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 150 ns
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Features
lFast intrinsic diode
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
IXFH 110N10P
IXFV 110N10P
IXFV 110N10PS
G
DS
TO-247 (IXFH)
(TAB)
G
S
D
PLUS220 (IXFV)
D (TAB)
G
SD (TAB)
PLUS220SMD (IXFV...S)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 30 40 S
Ciss 3550 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1370 pF
Crss 440 pF
td(on) 21 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 25 ns
td(off) RG = 4 Ω (External) 65 ns
tf25 ns
Qg(on) 110 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 25 nC
Qgd 62 nC
RthJC 0.31°C/W
RthCS (TO-247) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 110 A
ISM Repetitive 250 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/µs 150 ns
QRM VR = 50 V, VGS = 0 V 0.6 µC
TO-247 (IXFH) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
Terminals: 1 - Gate 2 - Drain
3 - Source TAB - Drain
1 2 3
PLUS220 (IXFV) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
140
160
180
200
220
012345678910
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
10
20
30
40
50
60
70
80
90
100
110
0 0.5 1 1.5 2 2.5 3 3.5 4
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
º
C
0
10
20
30
40
50
60
70
80
90
100
110
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
5V
6V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 110A
I
D
= 55A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 25ºC
V
GS
= 10V
T
J
= 175ºC
VGS = 15V
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
Fig. 11. Capacitance
100
1000
10000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20406080100120
Q
G
- nanoCoulombs
V
G S
- Volts
VDS = 50V
ID = 55A
IG = 10mA
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
4567891011
V
G S
- Volts
I
D
- Amperes
TJ = -40
º
C
25
º
C
150
º
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
0 50 100 150 200 250 300
I
D
- Amperes
g f s
- Siemens
TJ = -40
º
C
25
º
C
150
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.40.60.8 1 1.21.41.61.8 2
V
S D
- Volts
I
S
- Amperes
TJ = 150
º
C
TJ = 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1 10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
TJ = 175
º
C
TC = 25
º
C
RDS(on) Limit
10ms
25µs
© 2006 IXYS All rights reserved
Fig. 13. M axim um Trans ie nt The rm al Res is tance
0.01
0.10
1.00
0.1 1 10 100 1000
Pu ls e W id th - m illis e c onds
R( t h ) J C
- ºC / W
IXFH 110N10P IXFV110N10P
IXFV 110N10PS
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