BTW69-1200RG - STMicroelectronics

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Table 1: Main Features

DESCRIPTION

Available in high power packages, the BTW67 /

BTW69 Series is suitable in applications where

power handling and power dissipation are critical,

such as solid state relays, welding equipment,

high power motor control.

Based on a clip assembly technology, they offer a

superior performance in surge current handling

capabilities.

Thanks to their internal ceramic pad, they provide

high voltage insulation (2500VRMS), complying

with UL standards (file ref: E81734).

Symbol Value Unit

IT(RMS) 50 A

VDRM/VRRM 600 to 1200 V

IGT 80 mA

BTW67 and BTW69 Series

50A SCRS

REV. 5February 2006

STANDARD

Table 2: Order Codes

Part Numbers Marking

BTW67-xxx BTW67xxx

BTW69-xxxRG BTW69xxx

RD91

(BTW67)

TOP3 Ins.

(BTW69)

Table 3: Absolute Ratings (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current

(180° conduction angle)

RD91 Tc = 70°C 50 A

TOP3 Ins. Tc = 75°C

IT(AV) Average on-state current

(180° conduction angle)

RD91 Tc = 70°C 32 A

TOP3 Ins. Tc = 75°C

ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C 610 A

tp = 10 ms 580

I²tI

²t Value for fusing Tj = 25°C 1680 A2S

dI/dt Critical rate of rise of on-state current IG = 2

x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs

IGM Peak gate current tp = 20 µs Tj = 125°C 8A

PG(AV) Average gate power dissipation Tj = 125°C 1W

Tstg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125 °C

VRGM Maximum peak reverse gate voltage 5 V

BTW67 and BTW69 Series

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Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified)

Table 5: Thermal resistance

Symbol Test Conditions Value Unit

IGT VD = 12 V RL = 33 Ω

MIN. 8 mA

MAX. 80

VGT MAX. 1.3 V

VGD VD = VDRM RL = 3.3 kΩTj = 125°C MIN. 0.2 V

IHIT = 500 mA Gate open MAX. 150 mA

ILIG = 1.2 x IGT MAX. 200 mA

dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 1000 V/µs

VTM ITM = 100 A tp = 380 µs Tj = 25°C MAX. 1.9 V

Vt0 Threshold voltage Tj = 125°C MAX. 1.0 V

RdDynamic resistance Tj = 125°C MAX. 8.5 mΩ

IDRM

IRRM

VDRM = VRRM

Tj = 25°C

MAX.

10 µA

Tj = 125°C 5mA

Symbol Parameter Value Unit

Rth(j-c) Junction to case (D.C.) RD91 (Insulated) 1.0 °C/W

TOP3 Insulated 0.9

Rth(j-a) Junction to ambient (D.C.) TOP3 Insulated 50 °C/W

Figure 1: Maximum average power dissipation

versus average on-state current

Figure 2: Average and D.C. on-state current

versus case temperature

0 5 10 15 20 25 30 35

P(W)

I (A)

T(AV)

α= 180°

360°

0 25 50 75 100 125

I (A)

T(AV)

T (°C)

case

α= 180°

D.C.

BTW69

BTW67

BTW67 and BTW69 Series

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Figure 3: Relative variation of thermal

impedance versus pulse duration

Figure 4: Relative variation of gate trigger

current, holding current and latching current

versus junction temperature

Figure 5: Surge peak on-state current versus

number of cycles

Figure 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp < 10 ms, and corresponding values of I²t

Figure 7: On-state characteristics (maximum

values)

1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

1E-3

1E-2

1E-1

1E+0

K=[Z /R

th th

]

t (s)

Zth(j-c)

Zth(j-a)

BTW69

-40 -20 0 20 40 60 80 100 120 140

0.0

0.5

1.0

1.5

2.0

2.5

T (°C)

I,I,I[T] /

GT H L j

I ,I ,I [T =25°C]

GT H L j

IGT

IH& IL

1 10 100 1000

100

150

200

250

300

350

400

450

500

550

600

I (A)

TSM

Number of cycles

Non repetitive

T initial=25°C

Repetitive

T =75°C

t =10ms

One cycle

0.01 0.10 1.00 10.00

100

1000

5000

I (A), I t (A s)

TSM 22

t (ms)

I t

ITSM

T initial = 25°C

dI/dt limitation

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

100

600

I (A)

V (V)

Tj=max

T =25°C

V =1.0V

R =8.5m

T max.:

dΩ

BTW67 and BTW69 Series

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Figure 8: Ordering Information Scheme

Table 6: Product Selector

Figure 9: RD91 Package Mechanical Data

BTW 69 - 600 RG

Standard SCR series

Voltage

Packing mode

Type

67 = 50A in RD91

69 = 50A in TOP3

600 = 600V

800 = 800V

1200 = 1200V

RG = Tube

Blanck = Bulk

Part Numbers Voltage (xxx) Sensitivity Package

600 V 800 V 1200 V

BTW67-xxx X X X 80 mA RD91

BTW69-xxx X X X 80 mA TOP3 Ins.

N2 N1

C2 C1

REF.

DIMENSIONS

Millimeters Inches

Min. Max. Min. Max.

A 40.00 1.575

A1 29.90 30.30 1.177 1.193

A2 22.00 0.867

B 27.00 1.063

B1 13.50 16.50 0.531 0.650

B2 24.00 0.945

C 14.00 0.551

C1 3.50 0.138

C2 1.95 3.00 0.077 0.118

E3 0.70 0.90 0.027 0.035

F 4.00 4.50 0.157 0.177

I 11.20 13.60 0.441 0.535

L1 3.10 3.50 0.122 0.138

L2 1.70 1.90 0.067 0.075

N1 33° 43° 33° 43°

N2 28° 38° 28° 38°

BTW67 and BTW69 Series

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Figure 10: TOP3 Insulated Package Mechanical Data

In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These

packages have a Lead-free second level interconnect . The category of second level interconnect is

marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The

maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an

ST trademark. ECOPACK specifications are available at: www.st.com.

ØL

Table 7: Ordering Information

Ordering type Marking Package Weight Base qty Delivery mode

BTW67-xxx BTW67xxx RD91 20 g 25 Bulk

BTW69-xxxRG BTW69xxx TOP3 Ins. 4.5 g 30 Tube

Note: xxx = voltage

Table 8: Revision History

Date Revision Description of Changes

Apr-2001 4A Last update.

13-Feb-2006 5 TOP3 Insulated delivery mode changed from bulk to tube.

ECOPACK statement added.

REF.

DIMENSIONS

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

A 4.4 4.6 0.173 0.181

B 1.45 1.55 0.057 0.061

C 14.35 15.60 0.565 0.614

D 0.5 0.7 0.020 0.028

E 2.7 2.9 0.106 0.114

F 15.8 16.5 0.622 0.650

G 20.4 21.1 0.815 0.831

H 15.1 15.5 0.594 0.610

J 5.4 5.65 0.213 0.222

K 3.4 3.65 0.134 0.144

ØL 4.08 4.17 0.161 0.164

P 1.20 1.40 0.047 0.055

R 4.60 0.181

BTW67 and BTW69 Series

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