GaAs SP3T 2.7 V CDMA-GPS Switch
DC - 2.5 GHz
MASWSS0200
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V1
1
RoHS
Compliant
Features
•Balanced (symmetrical) RF Ports
•Low Cross Modulation
•Low Insertion Loss: 0.55 dB at 1 GHz
•High Isolation: 21 dB at 2 GHz
•0.5 micron GaAs PHEMT Process
•Lead-Free 3 mm 12-Lead PQFN Package
•100% Matte Tin Plating over Copper
•Halogen-Free “Green” Mold Compound
•260°C Reflow Compatible
•RoHS* Compliant Version of MASWSS0060
Description
M/A-COM’s MASWSS0200 is an industry leading
GaAs PHEMT MMIC single pole three throw (SP3T)
CDMA-GPS switch in a lead-free 3 mm 12-lead
PQFN package. The MASWSS0200 is uniquely
configured to enable switching from a common
antenna port to CDMA cellular, CDMA PCS, or GPS
ports.
The design is symmetric and has been fully
optimized for excellent cross modulation
performance in all three paths while still maintaining
excellent insertion loss and isolation. Note that
since the design is symmetric, the user can assign
CDMA cellular, CDMA PCS and GPS to ports RF1,
RF2 or RF3 at his or her discretion.
The MASWSS0200 is fabricated using a 0.5 micron
gate length GaAs PHEMT process. The process
features full passivation for performance and
reliability.
Pin Configuration
Pin No. Function Description
1 V1 Control 1
2 RF1 RF Port 1
3 GND Ground
4 GND Ground
5 RF2 RF Port 2
6 V2 Control 2
7 GND RF Ground
8 RF3 RF Port 3
9 V3 Control 3
10 GND RF Ground
11 ANT Antenna Port
12 GND RF Ground
13 GND (paddle) RF Ground
Functional Schematic
ANT
GND
GND
GND
100 pF
100 pF
100 pF
100 pF
RF2
V2
GND
RF3
V3V1
RF1
GND
Pin 1
Pin 12
Ordering Information
Part Number
Package
MASWSS0200TR-3000 3000 piece reel
MASWSS0200SMB Sample on Evaluation Board
Note: Reference Application Note M513 for reel size
information.
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
GaAs SP3T 2.7 V CDMA-GPS Switch
DC - 2.5 GHz
MASWSS0200
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V1
2
RoHS
Compliant
Electrical Specifications: TA = 25°C, Z0 = 50 Ω 1
1. External DC blocking capacitors are required on all RF ports.
2. Insertion Loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 - 2.5 GHz.
Parameter Test Conditions Units Min. Typ. Max.
Insertion Loss2
(All Paths)
1.0 GHz
1.5 GHz
2.0 GHz
dB
dB
dB
—
—
—
0.55
0.60
0.70
0.70
0.75
0.90
Isolation
DC - 1.0 GHz
1.0 - 2.0 GHz
2.0 - 2.5 GHz
dB
dB
dB
23
18
16
27
21
20
—
—
—
Return Loss
(All RF ports)
DC - 2.5 GHz dB — 20 —
IP3
Two Tone, +22 dBm/tone, 1 MHz Spacing, 820 MHz
Two Tone, +22 dBm/tone, 1 MHz Spacing, 1880 MHz
dBm
dBm
—
—
62
61
—
—
Cross Modulation
For Cell Band: Two-tone signal input:
Tx1 = +22 dBm @ 820 MHz, Tx2 = +22 dBm @ 821 MHz,
RX interfere = -23 dBm @ 869 MHz
dBm
— -101 —
For PCS Band: Two-tone signal input:
Tx1 = +18 dBm @ 1880 MHz, Tx2 = +18 dBm @ 1881 MHz,
RX interfere = -23 dBm @ 1960 MHz
dBm — -102 —
P.1dB Vc = 0 V / 2.7 V, 1 GHz dBm — 36 —
Trise, Tfall 10% to 90% RF, 90% to 10% RF, 900 MHz µS — 0.06 —
Ton, Toff 50% control to 90% RF, and 50% control to 10% RF, 900 MHz µS — 0.09 —
Transients In Band mV — 70 —
Control Current Vc = 0 V / 2.7 V µA — — 30
Truth Table 5,6
V1 V2 V3 ANT-RF1 ANT-RF2 ANT-RF3
1 0 0 On Off Off
0 1 0 Off On Off
0 0 1 Off Off On
5. Differential voltage, V (state 1) -V (state 0) must be 2.6 V
minimum and must not exceed 8.5 V.
6. 0 = -5 V to 2.4 V, 1 = -2.4 V to 5 V.
Parameter Absolute Maximum
Input Power
(0.5 - 2.5 GHz, 2.7 V Control)
+36 dBm
Control Voltage ±8.5 volts
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C
Absolute Maximum Ratings 3,4
3. Exceeding any one or combination of these limits may cause
permanent damage to this device.
4. M/A-COM does not recommend sustained operation near
these survivability limits.
GaAs SP3T 2.7 V CDMA-GPS Switch
DC - 2.5 GHz
MASWSS0200
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.
V1
3
RoHS
Compliant
Typical Performance Curves @ +25°C
VSWR
Insertion Loss
Isolation
0.0
0.2
0.4
0.6
0.8
1.0
0.51.01.52.02.53.0
RF1
RF2
RF3
Frequency (GHz)
15
20
25
30
35
0.5 1.0 1.5 2.0 2.5 3.0
RF1-RF2
RF2-RF1
RF3-RF2
Frequency (GHz)
1.0
1.1
1.2
1.3
1.4
1.5
0.51.01.52.02.53.0
Frequency (GHz)
Lead-Free 3 mm 12-Lead PQFN†
† Reference Application Note M538 for lead-free solder reflow recommendations.
Qualification
Qualified to M/A-COM specification REL-201,
Process Flow –2.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
