TLVD4200
www.vishay.com Vishay Semiconductors
Rev. 2.0, 27-Jan-15 1Document Number: 83058
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package
DESCRIPTION
The TLVD4200 serie was developed for backlighting in the
extrem bright double heterojunction (DH) red GaAlAs on
GaAs technology. Due to its special shape the spatial
distribution of the radiation is qualified for backlighting.
To optimize the brightness of backlighting a custom-built
reflector (with scattering) is required. Uniform illumination
can be enhanced by covering the front of the reflector with
diffusor material.
This is a bright and flexible solution for backlighting different
areas.
PRODUCT GROUP AND PACKAGE DATA
• Product group: LED
• Package: 3 mm backlighting
• Product series: standard
• Angle of half intensity: ± 85°
FEATURES
• High brightness
• Wide viewing angle
• Categorized for luminous flux
• Available in DH red
• Tinted clear package
• Low power dissipation
• Low self heating
• Rugged design
• High reliability
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Backlighting of display panels, LCD displays, symbols on
switches, keyboards, graphic boards, and measuring
scales
• Illumination of large areas e.g. dot matrix displays
19231
PARTS TABLE
PART COLOR
LUMINOUS FLUX
(mlm) at IF
(mA)
WAVELENGTH
(nm) at IF
(mA)
FORWARD VOLTAGE
(V) at IF
(mA) TECHNOLOGY
MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX.
TLVD4200 Red 40 130 - 15 - 640 - 10 - 1.8 2.2 20 GaAIAs on GaAs
TLVD4200-MSZ Red 40 130 - 15 - 640 - 10 - 1.8 2.2 20 GaAIAs on GaAs
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
TLVD4200
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR6V
DC forward current IF50 mA
Surge forward current tp ≤ 10μs IFSM 1A
Power dissipation Tamb ≤ 60 °C PV100 mW
Junction temperature Tj100 °C
Operating temperature range Tamb -40 to +100 °C
Storage temperature range Tstg -55 to +100 °C
Soldering temperature t ≤ 5 s, 2 mm from body Tsd 260 °C
Thermal resistance junction/ambient RthJA 400 K/W
TLVD4200
www.vishay.com Vishay Semiconductors
Rev. 2.0, 27-Jan-15 2Document Number: 83058
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Luminous flux is tested at a current pulse duration of 25 ms.
The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each
bag (there will be no mixing of two groups in each bag).
In order to ensure availability, single brightness groups will not be orderable.
In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one bag.
In order to ensure availability, single wavelength groups will not be orderable.
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward Current vs. Ambient Temperature Fig. 2 - Forward Current vs. Pulse Length
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TLVD4200, RED
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Luminous flux IF = 15 mA φV40 130 - mlm
Dominant wavelength IF = 10 mA λd- 640 - nm
Peak wavelength IF = 10 mA λp- 650 - nm
Angle of half intensity IF = 10 mA ϕ-± 85- deg
Forward voltage IF = 20 mA VF-1.82.2V
Reverse voltage IR = 10 μAV
R615- V
Junction capacitance VR = 0 V, f = 1 MHz Cj-50-pF
LUMINOUS FLUX CLASSIFICATION
GROUP LUMINOUS FLUX (mlm)
STANDARD MIN. MAX.
U4080
V 63 125
W 100 200
X 130 260
Y 180 360
Z 240 480
0
10
20
30
40
60
I
F
- Forward Current (mA)
T
amb
- Ambient Temperature (°C)
95 10095
50
020406080100
0.02
0.05
0.1
0.2
1
0.5
t
p/T= 0.01
Tamb ≤ 65 °C
0.01 0.1 1 10
1
10
100
1000
10 000
tp- Pulse Length (ms)
100
95 10047
I - Forward Current (mA)
F
TLVD4200
www.vishay.com Vishay Semiconductors
Rev. 2.0, 27-Jan-15 3Document Number: 83058
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Forward Current vs. Forward Voltage
Fig. 4 - Relative Luminous Flux vs. Ambient Temperature
Fig. 5 - Relative Luminous Flux vs. Forward Current / Duty Cycle
Fig. 6 - Relative Luminous Flux vs. Forward Current
Fig. 7 - Relative Intensity vs. Wavelength
Fig. 8 - Relative Luminous Intensity vs.
Angular Displacement for 90 ° Emission Angle
1
10
100
95 10014
1 1.5 2 2.5 3
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
red
0
96 11605
20 40 60 80 100
Tamb - Ambient Temperature (°C)
0
0.4
0.8
1.2
1.6
2.0
red
ΦV rel - Relative Luminous Flux
10 20 50 100 200
0
0.4
0.8
1.2
1.6
2.4
96 11606
500
0.5 0.2 0.1 0.05 0.021
IF (mA)
tp/T
2.0
red
IFAV = 10 mA, const.
ΦV rel - RelativeLuminous Flux
0.1 1 10
0.01
0.1
1
10
100
96 11607
I
F
- Forward Current (mA)
red
Φ
V rel
- Relative Luminous Flux
600 620 640 660 680
0
0.2
0.4
0.6
0.8
1.2
700
95 10018
I
rel
- Relative Luminous Intensity
- Wavelength (nm)
1.0
red
96 11608
I
V rel
- Relative Luminous Intensity
0.4 0.2 0 0.2 0.4 0.6
0.6
0° 30°10° 20° 40°
50°
60°
70°
80°
0.8 1.0
0.81.0
TLVD4200
www.vishay.com Vishay Semiconductors
Rev. 2.0, 27-Jan-15 4Document Number: 83058
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
AMMOPACK
Fig. 9 - Tape Direction
Note
• The new nomenclature for ammopack is e.g. ASZ only, without
suffix for the LED orientation. The carton box has to be turned to
the desired position: “+” for anode first, or “-” for cathode first.
AS12Z and AS21Z are still valid for already existing types, BUT
NOT FOR NEW DESIGN.
Ø 3.4 ± 0.15
Ø 2.95 ± 0.1
0.4
+ 0.15
- 0.05
< 0.6
2.4 ± 0.1
3.2 ± 0.3
4.6 ± 0.3
33.08 ± 0.5
1.5 ± 0.5
2.54 nom.
AC
AREA NOT PLANE
(1.3)
technical drawings
according to DIN
specications
Drawing-No.: 6.544-5226.01-4
Issue: 2; 28.07.14
0.5
+ 0.2
- 0.1
Tape feed direction
Diodes: cathode before anode
Transistors: collector before emitter
Label
Tape feed direction
94 8667-2
Diodes: anode before cathode
Transistors: emitter before collecto
r
TLVD4200
www.vishay.com Vishay Semiconductors
Rev. 2.0, 27-Jan-15 5Document Number: 83058
For technical questions, contact: LED@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE DIMENSIONS in millimeters
Option Dim. “H” ± 0.5 mm
MS 25.5
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
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