TDA1572T/V3,112 - NXP Semiconductors

DATA SH EET

Product speciﬁcation

File under Integrated Circuits, IC01 May 1992

INTEGRATED CIRCUITS

TDA1572T

AM receiver

May 1992 2

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

GENERAL DESCRIPTION

The TDA1572T integrated AM receiver circuit performs all

the active functions and part of the filtering required of an

AM radio receiver. It is intended for use in mains-fed home

receivers and car radios. The circuit can be used for

oscillator frequencies up to 50 MHz and can handle RF

signals up to 500 mV.

RF radiation and sensitivity to interference are minimized

by an almost symmetrical design. The controlled-voltage

oscillator provides signals with extremely low distortion

and high spectral purity over the whole frequency range,

even when tuning with variable capacitance diodes. If

required, band switching diodes can easily be applied.

Selectivity is obtained using a block filter before the IF

amplifier.

Features

•Inputs protected against damage by static discharge

•Gain-controlled RF stage

•Double balanced mixer

•Separately buffered, voltage-controlled and

temperature-compensated oscillator, designed for

simple coils

•Gain-controlled IF stage with wide AGC range

•Full-wave, balanced envelope detector

•Internal generation of AGC voltage with possibility of

second-order filtering

•Buffered field strength indicator driver with short-circuit

protection

•AF preamplifier with possibilities for simple AF filtering

•Electronic standby switch

•IF output for stereo demodulator and search tuning.

QUICK REFERENCE DATA

PACKAGE OUTLINE

20-lead mini-pack; plastic (SO20; SOT163A); SOT163-1; 1996 August 13.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VPSupply voltage range 7.5 8.5 14.0 V

IPSupply current range VP = 8.5 V 15 25 28 mA

RF input voltage (RMS value)

ViFR(rms) for (S +N)/N = 6 dB m = 30% −1.5 −µV

iRF(rms) for THD = 3% m = 80% −500 −mV

VoIF(rms) IF output voltage (RMS value) Vi = 2 mV(rms) 180 230 290 mV

AF output voltage (RMS value) Vi = 2 mV(rms);

fi = 1 MHz; m = 30%;

VoAF(rms) fm = 400 Hz 240 310 390 mV

AGC range

Change of Vi for 1 dB

∆Vichange of VoAF −86 −dB

Indicator driver (pin 13)

Output voltage Vi = 500 mV(rms);

VoRL= 2.7 kΩ2.5 2.8 3.1 V

May 1992 3

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Fig.1 Block diagram and test circuits (connections shown in broken lines are not part of the test circuits).

(1) Coil data: TOKO sample no. 7XNS-A7523DY; L1 : N1/N2 = 12/32; Qo = 65; QB = 57.

Filter data: ZF = 700 Ωat R3-4 = 3 kΩ; ZI = 4.8 kΩ.

May 1992 4

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

PINNING

1 MXO mixer output

2 STB standby switch

3 IFI1 IF input 1

4 IFI2 IF input 2

5 DET detector

6 AFO1 AF output 1

7 AGC1 AGC stage 1

8 ACG2 AGC stage 2

9 AFO2 AF output 2

10 n.c. not connected

11 n.c. not connected

12 IFO IF output

13 IND indicator output

14 OSO buffered oscillator output

15 OSC1 oscillator 1

16 OSC2 oscillator 2

17 VPsupply voltage

18 RFI1 RF input 1

19 RFI2 RF input 2

20 GND ground Fig.2 Pinning diagram.

May 1992 5

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

FUNCTIONAL DESCRIPTION

Gain-controlled RF stage and mixer

The differential amplifier in the RF stage employs an AGC negative feedback network to provide a wide dynamic range.

Very good cross-modulation behaviour is achieved by AGC delays at the various signal stages. Large signals are

handled with low distortion and the (S + N)/N ratio of small signals is improved. Low noise working is achieved in the

differential amplifier by using transistors with low base resistance.

A double balanced mixer provides the IF output signal to pin 1.

Oscillator

The differential amplifier oscillator is temperature compensated and is suitable for simple coil connection. The oscillator

is voltage-controlled and has little distortion or spurious radiation. It is specially suitable for electronic tuning using

variable capacitance diodes. Band switching diodes can easily be applied using the stabilized voltage V15-20. An extra

buffered oscillator output (pin 14) is available for driving a synthesizer. If this is not needed, resistor RL(14) can be omitted.

Gain-controlled IF ampliﬁer

This amplifier comprises two cascaded, variable-gain differential amplifier stages coupled by a band-pass filter.

Both stages are gain-controlled by the AGC negative feedback network. The IF output is available at pin 12.

Detector

The full-wave, balanced envelope detector has very low distortion over a wide dynamic range. Residual IF carrier is

blocked from the signal path by an internal low-pass filter.

AF preampliﬁer

This stage preamplifies the audio frequency output signal. The amplifier output has an emitter follower with a series

resistor which, together with an external capacitor, yields the required low-pass for AF filtering.

AGC ampliﬁer

The AGC amplifier provides a control voltage which is proportional to the carrier amplitude. Second-order filtering of the

AGC voltage achieves signals with very little distortion, even at low audio frequencies. This method of filtering also gives

fast AGC settling time which is advantageous for electronic search tuning. The AGC settling time can be further reduced

by using capacitors of smaller value in the external filter (C16 and C17). The AGC voltage is fed to the RF and IF stages

via suitable AGC delays. The capacitor at pin 7 can be omitted for low-cost applications.

Field strength indicator output

A buffered voltage source provides a high-level field strength output signal which has good linearity for logarithmic input

signals over the whole dynamic range. If the field strength information is not needed, RL(13) can be omitted.

Standby switch

This switch is primarily intended for AM/FM band switching. During standby mode the oscillator, mixer and AF

preamplifier are switched off.

Short-circuit protection

All pins have short-circuit protection to ground.

May 1992 6

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Note

1. Equivalent to discharging a 100 pF capacitor through a 1.5 kΩ series resistor; (5 pulses, both polarities).

THERMAL RESISTANCE

SYMBOL PARAMETER MIN. MAX. UNIT

VP= V17-20 Supply voltage (pin 17) −16 V

|V18-19| Input voltage −12 V

−V18-19;−V19-20 −0.6 V

V18-19; V19-20 −VPV

I18;I20Input current (pins 18 and 20) −200 mA

Ptot Total power dissipation −500 mW

Tstg Storage temperature range −55 +150 °C

Tamb Operating ambient temperature range −40 +85 °C

TjJunction temperature −+125 °C

Electrostatic handling(1)

Ves all pins except pins 3, 6, 9, 14 −2000 +2000 V

Ves pins 3, 6, 14 −1500 +2000 V

Ves pin 9 −1000 +2000 V

From junction to ambient (in free air) Rth j-a (max.) = 95 K/W

May 1992 7

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

CHARACTERISTICS

VP= V17-20 = 8.5 V; Tamb = 25 °C; fi= 1 MHz; fm= 400 Hz; m = 30%; fIF = 460 kHz; measured in test circuit of Fig.1; all

voltages referenced to ground; unless otherwise speciﬁed.

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

Supply

VPSupply voltage (pin 17) 7.5 8.5 14.0 V

IPSupply current (pin 17) 15 25 28 mA

RF stage and mixer (pins 18 and 19)

VIDC input voltage −VP/2 −V

ZiRF input impedance at VI < 300 µV (rms) −5.5 −kΩ

CiRF input capacitance −25 −pF

ZiRF input impedance at VI > 10 mV (rms) −8−kΩ

CiRF input capacitance −22 −pF

ZoIF output impedance (pin 1) 200 −−kΩ

oIF output capacitance −6−pF

Conversion transconductance

I1/Vibefore start of AGC −6.5 −mA/V

Maximum IF output voltage, inductive

V1-17(p-p) coupling to pin 1 (peak-to-peak value) −5−V

DC value of output current;

IOat VI = 0 V (pin 1) −1.2 −mA

AGC range of input stage −30 −dB

RF signal handling capability

Input voltage (RMS value)

Vi(rms) for THD = 3% at m = 80% −500 −mV

May 1992 8

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Oscillator

fosc Frequency range 0.1 −60 MHz

Voltage amplitude (pins 15 to 16)

V(rms) (RMS value) 80 130 150 mV

R(ext) External load impedance (pins 16 to 15) 0.5 −200 kΩ

External load impedance for no

R(ext) oscillation (pins 16 to 15) −−60 Ω

Supply voltage ripple rejection

at VP = 100 mV(rms); fp = 100 Hz

SVRR (SVRR = 20 log [V17/V15]) −55 −dB

Source voltage for switching diodes

V15-20 (6 x VBE) (pin 15) −4.2 −V

DC output current (for switching

−IOdiodes) (pin 15) 0 −20 mA

Change of output voltage at

∆I15 = 20 mA (switch to maximum load)

∆VI(pin 15) −0.3 −V

Buffered oscillator output (pin 14)

VODC output voltage −0.8 −V

Output signal amplitude

Vo(p-p) (peak-to-peak value) −320 −mV

ZOOutput impedance −170 −Ω

−I

O(peak) Output current (peak value) −−3mA

IF, AGC and AF stages

VIDC input voltage (pins 3 and 4) −2.0 −V

ZiIF input impedance (pins 3 to 4) 2.4 3.0 3.9 kΩ

CiIF input capacitance −7−pF

IF input voltage for

THD = 3% at m = 80% (pins 3 and 4)

ViIF(rms) (RMS value) −90 −mV

ZoIF output impedance (pin 12) −50 −Ω

Unloaded IF output voltage

at Vi = 10 mV (pin 12)

VoIF(rms) (RMS value) 180 230 290 mV

Voltage gain before start of AGC

Gv(pins 3 to 4; 6 to 20) −68 −dB

AGC range of IF stages: change of

V3-4 for 1 dB change of Vo(AF);

∆VvV3-4(ref) = 75 mV(rms) −55 −dB

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

May 1992 9

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

AF output voltage (RMS value)

VoAF(rms) at V3-4(IF) = 50 µV(rms) −130 −mV

VoAF(rms) at V3-4(IF) = 1 mV(rms) −310 −mV

ZoAF output impedance (pin 6) 2.8 3.5 4.2 kΩ

ZoAF output impedance (pin 9) 12.4 15.5 18.6 kΩ

Indicator driver (pin 13)

Output voltage at Vi = 0 mV(rms);

VoRL= 2.7 kΩ −−140 mV

Output voltage at Vi = 500 mV(rms);

VoRL= 2.7 kΩ2.5 2.8 3.1 V

RLLoad resistance 1.5 −−kΩ

−I

oOutput current at Vi = 500 mV(rms) −−2.0 mA

ZoOutput impedance at −Io= 0.5 mA −220 −Ω

oReverse output voltage at AM off −6−V

Standby switch

Switching threshold at;

VP = 7.5 to 14 V

Tamb = −40 to + 80 °C

V2-20 ON-voltage 0 −2.0 V

V2-20 OFF-voltage 3.5 −20.0 V

−I2ON-current at V2-20 = 0 V −100 200 µA

I2OFF-current at V2-20 = 14 V −−10 µA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

May 1992 10

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

OPERATING CHARACTERISTICS

VP = 8.5 V; fi = 1 MHz; m = 30%; fm = 400 Hz; Tamb = 25 °C; measured in Fig.1; unless otherwise speciﬁed

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

RF sensitivity

RF input voltage

(RMS value)

ViRF(rms) for (S + N)/N = 6 dB −1.5 −µV

iRF(rms) for (S + N)/N = 26 dB −15 −µV

iRF(rms) for (S + N)/N = 46 dB −150 −µV

iRF(rms) at start of AGC −30 −µV

RF large signal handling

RF input voltage

(RMS value)

ViRF(rms) at THD = 3%; m = 80% −500 −mV

ViRF(rms) at THD = 3%; m = 30% −700 −mV

ViRF(rms) at THD = 10%; m = 30% −900 −mV

AGC range

Change of Vi for 1 dB change

∆Viof VoAF; Vi(ref) = 500 mV(rms) −86 −dB

Change of Vi for 6 dB change

∆Viof VoAF; Vi(ref) = 500 mV(rms) −91 −dB

Output signal

(RMS value)

VoIF(rms) IF output voltage at Vi = 2 mV(rms) 180 230 290 mV

AF output voltage

VoAF(rms) at Vi = 4 µV(rms); m = 80% −130 −mV

VoAF(rms) at Vi = 2 mV(rms) 240 310 390 mV

Total harmonic distortion

THD at Vi = 2 mV(rms); m = 30% −0.5 −%

THD at Vi = 2 mV(rms); m = 80% −1.0 −%

THD at Vi = 500 mV(rms); m = 30% −1.0 −%

(S + N)/N Signal-to-noise ratio at Vi = 100 mV(rms) −58 −dB

Supply voltage ripple rejection at Vi = 2 mV(rms)

VP = 100 mV(rms); fp = 100 Hz

SVRR (SVRR = 20 log [VP/VoAF]) −38 −dB

SVRR (a) additional AF signal at IF output −0(1) −dB

SVRR (b) add modulation at IF output (mref = 30%) −40 −dB

May 1992 11

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Note

1. AF signals at the IF output will be suppressed by a coupling capacitor to the demodulator and by full wave-detection

in the demodulator.

Unwanted signals

Suppression of IF whistles at

Vi = 15 µV; m = 0% related to AF signal

of m = 30%

α2IF at fi≈ 2 × fIF −37 −dB

α3IF at fi≈ 3 × fIF −44 −dB

IF suppression at RF input;

αIF for symmetrical input −40 −dB

αIF for asymmetrical input −40 −dB

Residual oscillator signal at mixer output;

I1(osc) at fosc −1−µA

1(2osc) at 2 × fosc −1.1 −µA

SYMBOL PARAMETER MIN. TYP. MAX. UNIT

Fig.3 AF output as a function of RF input in the

circuit of Fig.1; fi = 1 MHz; fm = 400 Hz;

m = 30%.

Fig.4 Total harmonic distortion and (S + N)/N as

functions of RF input in the circuit of Fig.1;

m = 30% for (S + N)/N curve and m = 80%

for THD curve.

May 1992 12

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Fig.5 Total harmonic distortion as a function of modulation frequency at Vi = 5 mV; m = 80%; measured in

the circuit of Fig.1 with C7-20(ext) = 0 µF and 2.2 µF.

Fig.6 Indicator driver voltage as a function of RF

input in the circuit of Fig.1. Fig.7 Typical frequency response curves from

Fig.1 showing the effect of filtering.

___________ with IF filter;

 −  −  with AF filter;

− − − − − − with IF and AF filters.

May 1992 13

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Fig.8 IF output voltage as a function of RF input in the circuit of Fig.1; fi = 1 MHz.

Fig.9 Forward transfer impedance as a function of intermediate frequency for filters 1 to 4 shown in

Fig.10; centre frequency = 455 kHz.

May 1992 14

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

APPLICATION INFORMATION

Fig.10 IF filter variants applied to the circuit of Fig.1. For filter data, refer to Table 1.

May 1992 15

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Fig.11 Application diagram.

May 1992 16

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Fig.12 (S + N)/N as a function of input voltage; measured in the circuit of Fig.11 for AM stereo.

Fig.13 Total harmonic distortion (THD) as a function of input voltage; measured in the circuit of Fig.11 for AM

stereo.

May 1992 17

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

Table 1 Data for IF ﬁlters shown in Fig.10 (Filter 1 to 4) and Fig.11 (Filter 5). Criteria for adjustment is IF = maximum (optimum selectivity curve at

centre frequency f0 = 455 kHz). Filter 5 is used for AM stereo application with centre frequency f0 = 450 kHz.

* The beginning of an arrow indicates the beginning of a winding; N1 is always the inner winding, N2 the outer winding.

FILTER NO. 1 2 3 4 5 UNIT

Coil data L1 L1 L1 L2 L1 L1

Value of C 3900 430 3900 4700 3900 4700 pF

N1 : N2 12 : 32 13 : (33 + 66) 15 : 31 29 : 29 13 : 31 26 : 32

Diameter of CU

laminated wire 0.09 0.08 0.09 0.08 0.09 0.07 mm

Qo65 (typ.) 50 75 60 75 50

Schematic*

windings

(N1) (N2)

Toko order no. 7XNS-A7523DY L7PES-A0060BTG 7XNS-A7518DY 7XNS-A7521AIH 7XNS-A7519DY

Resonators

Murata type SFZ455A SFZ455A SFZ455A SFT455B SFH450F

D (typical value) 4 4 4 6 6 dB

RG, RL33 332kΩ

Bandwidth (−3 dB) 4.2 4.2 4.2 4.5 10 kHz

S9kHz 24 24 24 38 dB

Filter data

ZI4.8 3.8 4.2 4.8 1.8 kΩ

QB57 40 52 (L1) 18 (L2) 55 20

ZF0.70 0.67 0.68 0.68 0.70 kΩ

Bandwidth (−3 dB) 3.6 3.8 3.6 4.0 10 kHz

S9kHz 35 31 36 42 dB

S18kHz 52 49 54 64 dB

S27kHz 63 58 66 74 dB

May 1992 18

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

PACKAGE OUTLINE

UNIT A

max. A1A2A3bpcD

(1) E(1) (1)

ELL

pQZ

ywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

inches

2.65 0.30

0.10 2.45

2.25 0.49

0.36 0.32

0.23 13.0

12.6 7.6

7.4 1.27 10.65

10.00 1.1

1.0 0.9

0.4 8

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT163-1 92-11-17

95-01-24

detail X

0.25

075E04 MS-013AC

pin 1 index

0.10 0.012

0.004 0.096

0.089 0.019

0.014 0.013

0.009 0.51

0.49 0.30

0.29 0.050

1.4

0.055

0.42

0.39 0.043

0.039 0.035

0.016

0.01

0.25

0.01 0.004

0.043

0.016

0.01

0 5 10 mm

scale

vMA

(A )

SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

May 1992 19

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our

“IC Package Databook”

(order code 9398 652 90011).

Reﬂow soldering

Reflow soldering techniques are suitable for all SO

packages.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,

thermal conduction by heated belt. Dwell times vary

between 50 and 300 seconds depending on heating

method. Typical reflow temperatures range from

215 to 250 °C.

Preheating is necessary to dry the paste and evaporate

the binding agent. Preheating duration: 45 minutes at

45 °C.

Wave soldering

Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

•A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering

technique should be used.

•The longitudinal axis of the package footprint must be

parallel to the solder flow.

•The package footprint must incorporate solder thieves at

the downstream end.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Maximum permissible solder temperature is 260 °C, and

maximum duration of package immersion in solder is

10 seconds, if cooled to less than 150 °C within

6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limited to 10 seconds at up to 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operation within 2 to 5 seconds between

270 and 320 °C.

May 1992 20

Philips Semiconductors Product speciﬁcation

AM receiver TDA1572T

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.