1Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
MX25R8035F
ULTRA LOW POWER, 8M-BIT [x 1/x 2/x 4]
CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
Key Features
• Ultra Low Power Mode and High Performance Mode
• Wide Range VCC 1.65V-3.6V for Read, Erase and Program Operations
• Unique ID and Secure OTP Support
• Multi I/O Support - Single I/O, Dual I/O and Quad I/O
• Program Suspend/Resume & Erase Suspend/Resume
2Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Contents
1. FEATURES ..............................................................................................................................................................4
2. GENERAL DESCRIPTION ..................................................................................................................................... 6
Table 1. Additional Feature ..........................................................................................................................7
3. PIN CONFIGURATIONS ......................................................................................................................................... 8
4. PIN DESCRIPTION .................................................................................................................................................. 8
5. BLOCK DIAGRAM ................................................................................................................................................... 9
6. DATA PROTECTION .............................................................................................................................................. 10
Table 2. Protected Area Sizes ................................................................................................................... 11
Table 3. 8K-bit Secured OTP Denition ....................................................................................................12
7. MEMORY ORGANIZATION ................................................................................................................................... 13
Table 4. Memory Organization ..................................................................................................................13
8. DEVICE OPERATION ............................................................................................................................................ 14
9. HOLD FEATURE .................................................................................................................................................... 16
10. COMMAND DESCRIPTION ................................................................................................................................. 17
Table 5. Command Set ..............................................................................................................................17
10-1. Write Enable (WREN) ............................................................................................................................. 20
10-2. Write Disable (WRDI) ............................................................................................................................. 21
10-3. Read Identication (RDID) ...................................................................................................................... 22
10-4. Factory Mode Enable (FMEN) ................................................................................................................ 23
10-5. Read Electronic Signature (RES) ........................................................................................................... 24
10-6. Read Electronic Manufacturer ID & Device ID (REMS) .......................................................................... 25
10-7. ID Read ................................................................................................................................................... 26
Table 6. ID Denitions ..............................................................................................................................26
10-8. Read Status Register (RDSR) ................................................................................................................ 27
10-9. Read Conguration Register (RDCR) ..................................................................................................... 32
10-10. Write Status Register (WRSR) ............................................................................................................... 33
Table 7. Protection Modes .........................................................................................................................34
10-11. Read Data Bytes (READ) ....................................................................................................................... 37
10-12. Read Data Bytes at Higher Speed (FAST_READ) ................................................................................. 38
10-13. Dual Read Mode (DREAD) ..................................................................................................................... 39
10-14. 2 x I/O Read Mode (2READ) .................................................................................................................. 40
10-15. Quad Read Mode (QREAD) ................................................................................................................... 41
10-16. 4 x I/O Read Mode (4READ) .................................................................................................................. 42
10-17. Burst Read .............................................................................................................................................. 44
10-18. Performance Enhance Mode .................................................................................................................. 45
10-19. Sector Erase (SE) ................................................................................................................................... 47
10-20. Block Erase (BE32K) .............................................................................................................................. 48
10-21. Block Erase (BE) .................................................................................................................................... 49
10-22. Chip Erase (CE) ...................................................................................................................................... 50
10-23. Page Program (PP) ................................................................................................................................ 51
10-24. Quad Input Page Program (QPP) ........................................................................................................... 52
10-25. 4 x I/O Page Program (4PP) ................................................................................................................... 53
10-26. Deep Power-down (DP) .......................................................................................................................... 54
10-27. Enter Secured OTP (ENSO) ................................................................................................................... 55
10-28. Exit Secured OTP (EXSO) ...................................................................................................................... 55
3Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-29. Read Security Register (RDSCUR) ........................................................................................................ 55
Table 8. Security Register Denition .........................................................................................................56
10-30. Write Security Register (WRSCUR) ....................................................................................................... 56
10-31. Program/Erase Suspend/Resume .......................................................................................................... 57
Table 9. Readable Area of Memory While a Program or Erase Operation is Suspended .........................57
Table 10. Acceptable Commands During Program/Erase Suspend after tPSL/tESL ................................57
Table 11. Acceptable Commands During Suspend (tPSL/tESL not required) ...........................................58
10-32. Program Resume and Erase Resume .................................................................................................... 59
10-33. No Operation (NOP) ............................................................................................................................... 60
10-34. Software Reset (Reset-Enable (RSTEN) and Reset (RST)) .................................................................. 60
10-35. High Voltage Operation ........................................................................................................................... 62
10-36. Read SFDP Mode (RDSFDP) ................................................................................................................ 63
10-37. Factory Mode Sector Erase .................................................................................................................... 64
10-38. Factory Mode 32KB Block Erase ............................................................................................................ 65
10-39. Factory Mode 64KB Block Erase ............................................................................................................ 66
10-40. Factory Mode Chip Erase ....................................................................................................................... 67
10-41. Read Factory Status ............................................................................................................................... 68
11. RESET .................................................................................................................................................................. 69
Table 12. Reset Timing-(Power On) ..........................................................................................................69
Table 13. Reset Timing-(Other Operation) ................................................................................................69
12. POWER-ON STATE ............................................................................................................................................. 70
13. ELECTRICAL SPECIFICATIONS ........................................................................................................................ 71
Table 14. Absolute Maximum Ratings .......................................................................................................71
Table 15. Capacitance ...............................................................................................................................71
Table 16. DC Characteristics .....................................................................................................................73
Table 17. AC Characteristics ....................................................................................................................75
14. OPERATING CONDITIONS ................................................................................................................................. 79
Table 18. Power-Up/Down Voltage and Timing ......................................................................................... 81
14-1. Initial Delivery State ................................................................................................................................ 81
15. ERASE AND PROGRAMMING PERFORMANCE .............................................................................................. 82
16. ERASE AND PROGRAMMING PERFORMANCE (Factory Mode) ................................................................... 83
17. LATCH-UP CHARACTERISTICS ........................................................................................................................ 83
18. ORDERING INFORMATION ................................................................................................................................ 84
19. PART NAME DESCRIPTION ............................................................................................................................... 85
20. PACKAGE INFORMATION .................................................................................................................................. 86
20-1. 8 PIN SOP (150mil) ................................................................................................................................ 86
20-2. 8 PIN SOP (200mil) ................................................................................................................................ 87
20-3. 8 Land WSON (6x5mm) ......................................................................................................................... 88
20-4. 8 Land USON (2x3mm) .......................................................................................................................... 89
20-5. 3-2-3 Ball Array 8-BALL BGA (WLCSP) .................................................................................................. 90
20-6. 2x4 Ball Array 8-BALL BGA (WLCSP) .................................................................................................... 91
20-7. 2x4 Ball Array 8-BALL BGA (WLCSP) (Height: 0.3mm) ......................................................................... 92
21. REVISION HISTORY ........................................................................................................................................... 93
4Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
1. FEATURES
Ultra Low Power 8M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
GENERAL
• Supports Serial Peripheral Interface -- Mode 0 and Mode 3
• 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (two I/O mode) structure or 2,097,152 x 4 bits (four I/O mode)
structure
• Equal Sectors with 4K byte each, or Equal Blocks with 32K/64K byte each
- Any Block can be erased individually
• Single Power Supply Operation
- Operation Voltage: 1.65V-3.6V for Read, Erase and Program Operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
- Fast read
- 1 I/O: 108MHz with 8 dummy cycles
- 2 I/O: 104MHz with 4 dummy cycles, equivalent to 208MHz
- 4 I/O: 104MHz with 2+4 dummy cycles, equivalent to 416MHz
- Fast program and erase time
- 8/16/32/64 byte Wrap-Around Burst Read Mode
• Ultra Low Power Consumption
• Minimum 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit denes the size of the area to be software protection against program and erase
instructions
• Additional 8K bits secured OTP
- Features unique identier.
- Factory locked identiable and customer lockable
• Auto Erase and Auto Program Algorithm
- Automatically erases and veries data at selected sector or block
-
Automatically programs and veries data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state rst)
• Status Register Feature
• Command Reset
• Program/Erase Suspend and Program/Erase Resume
• Electronic Identication
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and 1-byte device ID
• Support Serial Flash Discoverable Parameters (SFDP) mode
• Support Unique ID (Please contact local Macronix sales for detail information)
5Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• RESET#/SIO3 * or HOLD#/SIO3 *
- Hardware Reset pin or Serial input & Output for 4 x I/O read mode
or
- HOLD feature, to pause the device without deselecting the device or Serial input & Output for 4 x I/O read mode
* Depends on part number options
• PACKAGE
- 8-pin SOP (150mil/200mil)
- 8-land WSON (6x5mm)
- 8-land USON (2x3mm)
- 8-ball WLCSP (3-2-3 Ball Array)
- 8-ball WLCSP (2x4 Ball Array)
- All devices are RoHS Compliant and Halogen-free
6Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
2. GENERAL DESCRIPTION
MX25R8035F is 8Mb bits Serial NOR Flash memory, which is congured as 1,048,576 x 8 internally. When it is in
four I/O mode, the structure becomes 2,097,152 bits x 4 or 4,194,304 bits x 2.
MX25R8035F features a serial peripheral interface and software protocol allowing operation on a simple 3-wire bus
while it is in single I/O mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial
data output (SO). Serial access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits
input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# pin and RESET#/HOLD# pin
become SIO0 pin, SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25R8035F
MXSMIO® (Serial Multi I/O)
provides sequential read operation on the whole chip.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the
specied page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis. Erase command is executed on 4K-byte sector, 32K-byte block, or 64K-byte block, or
whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
The MX25R8035F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
7Rev. 1.6, October 27, 2017
MX25R8035F
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Table 1. Additional Feature
Protection and Security MX25R8035F
Flexible Block Protection (BP0-BP3) V
8K-bit security OTP V
Fast Read
Performance
Ultra Low Power Mode
(Conguration Register-2 bit1= 0)
High Performance Mode
(Conguration Register-2 bit1= 1)
I/O 1 I/O 1I/2O 2 I/O 1I/4O 4 I/O 1 I/O 1I/2O 2 I/O 1I/4O 4 I/O
Dummy Cycle 8 8 4 8 6 8 8 4 8 6
Frequency 33MHz 16MHz 16MHz 16MHz 16MHz 108MHz 104MHz 104MHz 104MHz 104MHz
8Rev. 1.6, October 27, 2017
MX25R8035F
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3. PIN CONFIGURATIONS 4. PIN DESCRIPTION
SYMBOL DESCRIPTION
CS# Chip Select
SI/SIO0
Serial Data Input (for 1 x I/O)/ Serial
Data Input & Output (for 4xI/O read
mode)
SO/SIO1
Serial Data Output (for 1 x I/O)/ Serial
Data Input & Output (for 4xI/O read
mode)
SCLK Clock Input
WP#/SIO2
Write Protection Active Low or Serial
Data Input & Output (for 4xI/O read
mode)
RESET#/SIO3 *
Hardware Reset Pin Active low or
Serial Data Input & Output (for 4xI/O
read mode)
HOLD#/SIO3 *
To pause the device without
deselecting the device or Serial Data
Input & Output (for 4xI/O read mode)
VCC Power Supply
GND Ground
8-LAND WSON (6x5mm), USON (2x3mm)
1
2
3
4
CS#
SO/SIO1
WP#/SIO2
GND
8
7
6
5
VCC
RESET#/SIO3 * or HOLD#/SIO3 *
SCLK
SI/SIO0
8-PIN SOP (150mil/200mil)
1
2
3
4
CS#
SO/SIO1
WP#/SIO2
GND
VCC
RESET#/SIO3 * or HOLD#/SIO3 *
SCLK
SI/SIO0
8
7
6
5
3-2-3 Ball Array 8-BALL BGA (WLCSP) TOP View
A
1 2 3
B
C
D
E
SCLK WP#/SIO2
RESET#/SIO3*
or HOLD#/SIO3* SO/SIO1
CS#
SI/SIO0
GND
VCC
2x4 Ball Array 8-BALL BGA (WLCSP) TOP View
A
1 2
B
C
D
SCLK WP#/SIO2
RESET#/SIO3*
or HOLD#/SIO3* SO/SIO1
CS#
SI/SIO0 GND
VCC
* Depends on part number options.
* Depends on part number options.
Note:
1. The pin of RESET#/SIO3, HOLD#/SIO3 or WP#/SIO2
will remain internal pull up function while this pin is
not physically connected in system conguration.
However, the internal pull up function will be disabled
if the system has physical connection to RESET#/
SIO3, HOLD#/SIO3 or WP#/SIO2 pin.
9Rev. 1.6, October 27, 2017
MX25R8035F
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5. BLOCK DIAGRAM
Address
Generator
Memory Array
Y-Decoder
X-Decoder
Data
Register
SRAM
Buffer
SI/SIO0
SO/SIO1
SIO2 *
SIO3 *
WP# *
RESET# *
HOLD# *
CS#
SCLK Clock Generator
State
Machine
Mode
Logic
Sense
Amplifier
HV
Generator
Output
Buffer
* Depends on part number options.
10 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specic command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC power-
up and power-down or from system noise.
• Power-on reset: to avoid sudden power switch by system power supply transition, the power-on reset may
protect the Flash.
• Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
• Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
issuing other commands to change data.
• Deep Power Down Mode: By entering deep power down mode, the ash device is under protected from writing
all commands except toggling the CS#. For more detail please see "10-26. Deep Power-down (DP)".
• Advanced Security Features: there are some protection and security features which protect content from
inadvertent write and hostile access.
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0) bits to allow part of memory to be protected
as read only. The protected area denition is shown as "Table 2. Protected Area Sizes", the protected areas are
more exible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Protected Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status
Register Write Protect (SRWD) bit. If the system goes into four I/O mode, the feature of HPM will be disabled.
11 Rev. 1.6, October 27, 2017
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Table 2. Protected Area Sizes
Protected Area Sizes (TB bit = 0)
Status bit Protect Level
BP3 BP2 BP1 BP0 8Mb
0 0 0 0 0 (none)
0 0 0 1 1 (1block, block 15th)
0 0 1 0 2 (2blocks, block 14th-15th)
0 0 1 1 3 (4blocks, block 12th-15th)
0 1 0 0 4 (8blocks, block 8th-15th)
0 1 0 1 5 (16blocks, protect all)
0 1 1 0 6 (16blocks, protect all)
0 1 1 1 7 (16blocks, protect all)
1 0 0 0 8 (16blocks, protect all)
1 0 0 1 9 (16blocks, protect all)
1 0 1 0 10 (16blocks, protect all)
1 0 1 1 11 (16blocks, protect all)
1 1 0 0 12 (16blocks, protect all)
1 1 0 1 13 (16blocks, protect all)
1 1 1 0 14 (16blocks, protect all)
1 1 1 1 15 (16blocks, protect all)
Protected Area Sizes (TB bit = 1)
Status bit Protect Level
BP3 BP2 BP1 BP0 8Mb
0 0 0 0 0 (none)
0 0 0 1 1 (1block, block 0th)
0 0 1 0 2 (2blocks, block 0th-1st)
0 0 1 1 3 (4blocks, block 0th-3rd)
0 1 0 0 4 (8blocks, block 0th-7th)
0 1 0 1 5 (16blocks, protect all)
0 1 1 0 6 (16blocks, protect all)
0 1 1 1 7 (16blocks, protect all)
1 0 0 0 8 (16blocks, protect all)
1 0 0 1 9 (16blocks, protect all)
1 0 1 0 10 (16blocks, protect all)
1 0 1 1 11 (16blocks, protect all)
1 1 0 0 12 (16blocks, protect all)
1 1 0 1 13 (16blocks, protect all)
1 1 1 0 14 (16blocks, protect all)
1 1 1 1 15 (16blocks, protect all)
Note: The device is ready to accept a Chip Erase instruction if, and only if, all Block Protect (BP3, BP2, BP1,
BP0) are 0.
12 Rev. 1.6, October 27, 2017
MX25R8035F
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II. Additional 8K-bit secured OTP for unique identier: to provide 8K-bit One-Time Program area for setting
device unique serial number - Which may be set by factory or system maker.
The 8K-bit secured OTP area is composed of two rows of 4K-bit. Customer could lock the rst 4K-bit OTP
area and factory could lock the other.
- Security register bit 0 indicates whether the 2nd 4K-bit is locked by factory or not.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register)
command to set customer lock-down bit1 as "1". Please refer to table of "Table 8. Security Register Denition"
for security register bit denition and table of "Table 3. 8K-bit Secured OTP Denition" for address range
denition.
- To program 8K-bit secured OTP by entering secured OTP mode (with ENSO command), and going through
normal program procedure, and then exiting secured OTP mode by writing EXSO command.
Note: Once lock-down whatever by factory or customer, the corresponding secured area cannot be changed any
more. While in 8K-bit Secured OTP mode, array access is not allowed.
Table 3. 8K-bit Secured OTP Denition
Address range Size Lock-down
xxx000~xxx1FF 4096-bit Determined by Customer
xxx200~xxx3FF 4096-bit Determined by Factory
13 Rev. 1.6, October 27, 2017
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Table 4. Memory Organization
7. MEMORY ORGANIZATION
Block
(64KB)
Block
(32KB)
Sector
(4KB) Address Range
15
31
|
30
255 0FF000h 0FFFFFh
: : :
240 0F0000h 0F0FFFh
14
29
|
28
239 0EF000h 0EFFFFh
: : :
224 0E0000h 0E0FFFh
13
27
|
26
223 0DF000h 0DFFFFh
: : :
208 0D0000h 0D0FFFh
12
25
|
24
207 0CF000h 0CFFFFh
: : :
192 0C0000h 0C0FFFh
11
23
|
22
191 0BF000h 0BFFFFh
: : :
176 0B0000h 0B0FFFh
10
21
|
20
175 0AF000h 0AFFFFh
: : :
160 0A0000h 0A0FFFh
9
19
|
18
159 09F000h 09FFFFh
: : :
144 090000h 090FFFh
8
17
|
16
143 08F000h 08FFFFh
: : :
128 080000h 080FFFh
7
15
|
14
127 07F000h 07FFFFh
: : :
112 070000h 070FFFh
6
13
|
12
111 06F000h 06FFFFh
: : :
96 060000h 060FFFh
5
11
|
10
95 05F000h 05FFFFh
: : :
80 050000h 050FFFh
4
9
|
8
79 04F000h 04FFFFh
: : :
64 040000h 040FFFh
3
7
|
6
63 03F000h 03FFFFh
: : :
48 030000h 030FFFh
2
5
|
4
47 02F000h 02FFFFh
: : :
32 020000h 020FFFh
1
3
|
2
31 01F000h 01FFFFh
: : :
16 010000h 010FFFh
0
1
|
0
15 00F000h 00FFFFh
: : :
2 002000h 002FFFh
1 001000h 001FFFh
0 000000h 000FFFh
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8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended
operation.
2. When incorrect command is inputted to this device, it enters standby mode and remains in standby mode until
next CS# falling edge. In standby mode, SO pin of the device is High-Z.
3. When correct command is inputted to this device, it enters active mode and remains in active mode until next
CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as "Figure 1. Serial Modes Supported".
5. For the following instructions: RDID, RDSR, RDCR, RDSCUR, READ, FAST_READ, DREAD, 2READ, 4READ,
QREAD, RDSFDP, RES, REMS, the shifted-in instruction sequence is followed by a data-out sequence. After
any bit of data being shifted out, the CS# can be high. For the following instructions: WREN, WRDI, WRSR, SE,
BE32K, BE, CE, PP, QPP, 4PP, DP, ENSO, EXSO, WRSCUR, SUSPEND, RESUME, NOP, RSTEN, RST, the
CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
6. While a Write Status Register, Program or Erase operation is in progress, access to the memory array is
neglected and will not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
SCLK
MSB
CPHA shift in shift out
SI
0
1
CPOL
0(Serial mode 0)
(Serial mode 3) 1
SO
SCLK
MSB
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Figure 2. Serial Input Timing
Figure 3. Output Timing
SCLK
SI
CS#
MSB
SO
tDVCH
High-Z
LSB
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSHtCHSL
LSB
ADDR.LSB IN
tSHQZ
tCH
tCL
tCLQX
tCLQV
tCLQX
tCLQV
SCLK
SO
CS#
SI
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9. HOLD FEATURE
HOLD# pin signal goes low to hold any serial communications with the device. The HOLD feature will not stop the
operation of write status register, programming, or erasing in progress.
The operation of HOLD requires Chip Select (CS#) keeping low and starts on falling edge of HOLD# pin signal
while Serial Clock (SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not start
until Serial Clock signal being low). The HOLD condition ends on the rising edge of HOLD# pin signal while Serial
Clock(SCLK) signal is being low (if Serial Clock signal is not being low, HOLD operation will not end until Serial
Clock being low).
Figure 4. Hold Condition Operation
Valid Data Valid Data Valid DataDon’t care
High_Z High_Z
Don’t care
Bit 7 Bit 6 Bit 5
Bit 5
Bit 7
Bit 7 Bit 6
Bit 6
HOLD#
CS#
SCLK
SI/SIO0
SO/SIO1
(internal)
SO/SIO1
(External)
≈ ≈ ≈ ≈ ≈ ≈ ≈≈
Valid Data Valid Data Valid DataDon’t care
High_Z High_Z
Don’t care
Bit 7 Bit 6 Bit 5 Bit 3Bit 4
Bit 7 Bit 6 Bit 4
Bit 5 Bit 3
HOLD#
CS#
SCLK
SI/SIO0
SO/SIO1
(internal)
SO/SIO1
(External)
≈ ≈ ≈ ≈ ≈ ≈ ≈≈
During the HOLD operation, the Serial Data Output (SO) is high impedance when Hold# pin goes low and will keep
high impedance until Hold# pin goes high. The Serial Data Input (SI) is don't care if both Serial Clock (SCLK) and
Hold# pin goes low and will keep the state until SCLK goes low and Hold# pin goes high. If Chip Select (CS#) drives
high during HOLD operation, it will reset the internal logic of the device. To re-start communication with chip, the
HOLD# must be at high and CS# must be at low.
Note: The HOLD feature is disabled during Quad I/O mode.
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10. COMMAND DESCRIPTION
Table 5. Command Set
Read/Write Array Commands
I/O 1 1 2 2 4 4 1
Command
(byte)
READ
(normal read)
FAST READ
(fast read data)
2READ
(2 x I/O read
command)
DREAD
(1I / 2O read
command)
4READ
(4 x I/O read)
QREAD
(1I/4O read)
PP
(page program)
1st byte 03 (hex) 0B (hex) BB (hex) 3B (hex) EB (hex) 6B (hex) 02 (hex)
2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1 ADD1
3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2 ADD2
4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3 ADD3
5th byte Dummy Dummy Dummy Dummy Dummy
Action
n bytes read
out until CS#
goes high
n bytes read
out until CS#
goes high
n bytes read
out by 2 x I/O
until CS# goes
high
n bytes read
out by Dual
Output until
CS# goes high
Quad I/O read
with 6 dummy
cycles
n bytes read
out by Quad
output until
CS# goes high
to program the
selected page
I/O4411111
Command
(byte)
QPP
(Quad Input
Page Program)
4PP
(quad page
program)
SE
(sector erase)
BE 32K
(block erase
32KB)
BE
(block erase
64KB)
CE
(chip erase)
RDSFDP
(Read SFDP)
1st byte 32 (hex) 38 (hex) 20 (hex) 52 (hex) D8 (hex) 60 or C7 (hex) 5A (hex)
2nd byte ADD1 ADD1 ADD1 ADD1 ADD1 ADD1
3rd byte ADD2 ADD2 ADD2 ADD2 ADD2 ADD2
4th byte ADD3 ADD3 ADD3 ADD3 ADD3 ADD3
5th byte Dummy
Action
single I/O
address input
and quad I/O
data input to
program the
selected page
quad input to
program the
selected page
to erase the
selected sector
to erase the
selected 32KB
block
to erase the
selected block
to erase whole
chip
Read SFDP
mode
18 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Register/Setting Commands
Command
(byte)
WREN
(write enable)
WRDI
(write disable)
FMEN
(factory mode
enable)
RDSR
(read status
register)
RDCR (read
conguration
register)
WRSR
(write status
register)
1st byte 06 (hex) 04 (hex) 41 (hex) 05 (hex) 15 (hex) 01 (hex)
2nd byte Values
3rd byte Values
4th byte Values
5th byte
Action
sets the (WEL)
write enable latch
bit
resets the (WEL)
write enable latch
bit
enable factory
mode
to read out the
values of the
status register
to read out the
values of the
conguration
register -1 &
conguration
register -2
to write new
values of the
conguration/
status register
Command
(byte)
PGM/ERS
Suspend
(Suspends
Program/Erase)
PGM/ERS
Resume
(Resumes
Program/Erase)
DP
(Deep power
down)
SBL
(Set Burst Length)
RDFSR
(Read Factory
Status Register)
1st byte 75 or B0 (hex) 7A or 30 (hex) B9 (hex) C0 (hex) 44 (hex)
2nd byte Value
3rd byte
4th byte
5th byte
Action
program/erase
operation is
interrupted
by suspend
command
to continue
performing the
suspended
program/erase
sequence
enters deep
power down
mode
to set Burst length to read out the
values of the
factory status
register
19 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Command
(byte)
RDID
(read identic-
ation)
RES (read
electronic ID)
REMS (read
electronic
manufacturer
& device ID)
ENSO (enter
secured OTP)
EXSO (exit
secured OTP)
RDSCUR
(read security
register)
WRSCUR
(write security
register)
1st byte 9F (hex) AB (hex) 90 (hex) B1 (hex) C1 (hex) 2B (hex) 2F (hex)
2nd byte x x
3rd byte x x
4th byte x ADD (Note 1)
5th byte
Action
outputs JEDEC
ID: 1-byte
Manufacturer
ID & 2-byte
Device ID
to read out
1-byte Device
ID
output the
Manufacturer
ID & Device ID
to enter the
8K-bit secured
OTP mode
to exit the
8K-bit secured
OTP mode
to read value
of security
register
to set the lock-
down bit as
"1" (once lock-
down, cannot
be update)
COMMAND
(byte)
NOP
(No Operation)
RSTEN
(Reset Enable)
RST
(Reset
Memory)
1st byte 00 (hex) 66 (hex) 99 (hex)
2nd byte
3rd byte
4th byte
5th byte
Action (Note 3)
ID/Reset Commands
Note 1: ADD=00H will output the manufacturer ID rst and ADD=01H will output device ID rst.
Note 2: It is not recommended to adopt any other code not in the command denition table, which will potentially enter the
hidden mode.
Note 3: The RSTEN command must be executed before executing the RST command. If any other command is issued
in-between RSTEN and RST, the RST command will be ignored.
20 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP,
QPP, 4PP, SE, BE32K, BE, CE, and WRSR, which are intended to change the device content WEL bit should be set
every time after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
The SIO[3:1] are "don't care" .
Figure 5. Write Enable (WREN) Sequence
21 34567
High-Z
0
06h
Command
SCLK
SI
CS#
SO
Mode 3
Mode 0
21 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
The SIO[3:1] are "don't care".
The WEL bit is reset by following situations:
- Power-up
- Reset# pin driven low
- Completion of Write Disable (WRDI) instruction
- Completion of Write Status Register (WRSR) instruction
- Completion of Page Program (PP) instruction
- Completion of Quad Input Page Program (QPP) instruction
- Completion of Quad Page Program (4PP) instruction
- Completion of Sector Erase (SE) instruction
- Completion of Block Erase 32KB (BE32K) instruction
- Completion of Block Erase (BE) instruction
- Completion of Chip Erase (CE) instruction
- Program/Erase Suspend
- Completion of Softreset command
- Completion of Write Security Register (WRSCUR) command
Figure 6. Write Disable (WRDI) Sequence
21 34567
High-Z
0Mode 3
Mode 0
04h
Command
SCLK
SI
CS#
SO
22 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-3. Read Identication (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix
Manufacturer ID and Device ID are listed as "Table 6. ID Denitions".
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 7. Read Identication (RDID) Sequence
21 3456789 10 11 12 13 14 15
Command
0
Manufacturer Identification
High-Z
MSB
15 14 13 3210
Device Identification
MSB
7 6 5 3 2 1 0
16 17 18 28 29 30 31
SCLK
SI
CS#
SO
9Fh
Mode 3
Mode 0
23 Rev. 1.6, October 27, 2017
MX25R8035F
10-4. Factory Mode Enable (FMEN)
The Factory Mode Enable (FMEN) instruction is for enhance Program and Erase performance for increase factory
production throughput. The FMEN instruction need to combine with the instructions which are intended to change
the device content, like SE, BE32K, BE, and CE.
The sequence of issuing FMEN instruction is: CS# goes low→sending FMEN instruction code→ CS# goes high.
A valid factory mode operation need to included three sequences: WREN instruction → FMEN instruction→ Erase
instruction.
Suspend command is not acceptable under factory mode.
The FMEN is reset by following situations
- Power-up
- Reset# pin driven low
- SE command completion
- BE32K command completion
- BE command completion
- CE command completion
- Softreset command completion
Figure 8. Factory Mode Enable (FMEN) Sequence
21 34567
High-Z
0
41h
Command
SCLK
SI
CS#
SO
Mode 3
Mode 0
P/N: PM2164
24 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-5. Read Electronic Signature (RES)
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as "Table 6.
ID Denitions". This is not the same as RDID instruction. It is not recommended to use for new design. For new
design, please use RDID instruction.
The SIO[3:1] are "don't care".
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly
if continuously send the additional clock cycles on SCLK while CS# is at low.
Figure 9. Read Electronic Signature (RES) Sequence
23
21 3456789 10 28 29 30 31 32 33 34 35
22 21 3210
36 37 38
765432 0
1
High-Z Electronic Signature Out
3 Dummy Bytes
0
MSB
MSB
SCLK
CS#
SI
SO
ABh
Command
Mode 3
Mode 0
25 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-6. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction returns both the JEDEC assigned manufacturer ID and the device ID. The Device ID values
are listed in "Table 6. ID Denitions".
The REMS instruction is initiated by driving the CS# pin low and sending the instruction code "90h" followed by two
dummy bytes and one address byte (A7~A0). After which the manufacturer ID for Macronix (C2h) and the device
ID are shifted out on the falling edge of SCLK with the most signicant bit (MSB) rst. If the address byte is 00h,
the manufacturer ID will be output rst, followed by the device ID. If the address byte is 01h, then the device ID will
be output rst, followed by the manufacturer ID. While CS# is low, the manufacturer and device IDs can be read
continuously, alternating from one to the other. The instruction is completed by driving CS# high.
Notes:
(1) ADD=00H will output the manufacturer's ID rst and ADD=01H will output device ID rst.
Figure 10. Read Electronic Manufacturer & Device ID (REMS) Sequence
15 14 13 3 2 1 0
21 3456789 10
2 Dummy Bytes
0
32 33 34 36 37 38 39 40 41 42 43 44 45 46
765432 0
1
Manufacturer ID
ADD (1)
MSB
76543210
Device ID
MSB MSB
7
47
765432 0
1
3531302928
SCLK
SI
CS#
SO
SCLK
SI
CS#
SO
90h
High-Z
Command
Mode 3
Mode 0
26 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-7. ID Read
User can execute this ID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issuing
RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out on SO→ to end RDID
operation can drive CS# to high at any time during data out.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Table 6. ID Denitions
Command Type MX25R8035F
RDID Manufacturer ID Memory type Memory density
C2 28 14
RES Electronic ID
14
REMS Manufacturer ID Device ID
C2 14
27 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-8. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
The SIO[3:1] are "don't care".
Figure 11. Read Status Register (RDSR) Sequence
21 3456789 10 11 12 13 14 15
command
0
76543210
Status Register Out
High-Z
MSB
76543210
Status Register Out
MSB
7
SCLK
SI
CS#
SO
05h
Mode 3
Mode 0
28 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
WREN command
Program/erase command
Write program data/address
(Write erase address)
RDSR command
Read array data
(same address of PGM/ERS)
Program/erase successfully
Yes
Yes
Program/erase fail
No
start
Verify OK?
WIP=0?
Program/erase
another block?
Program/erase completed
No
Yes
No
RDSR command*
Yes
WEL=1? No
* Issue RDSR to check BP[3:0].
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Figure 12. Program/Erase ow with read array data
For user to check if Program/Erase operation is nished or not, RDSR instruction ow are shown as follows:
29 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Figure 13. Program/Erase ow without read array data (read P_FAIL/E_FAIL ag)
WREN command
Program/erase command
Write program data/address
(Write erase address)
RDSR command
RDSCUR command
Program/erase successfully
Yes
No
Program/erase fail
Yes
start
P_FAIL/E_FAIL =1 ?
WIP=0?
Program/erase
another block?
Program/erase completed
No
Yes
No
RDSR command*
Yes
WEL=1? No
* Issue RDSR to check BP[3:0].
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
30 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Status Register
Note 1: see the "Table 2. Protected Area Sizes".
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
SRWD (status
register write
protect)
QE
(Quad
Enable)
BP3
(level of
protected
block)
BP2
(level of
protected
block)
BP1
(level of
protected
block)
BP0
(level of
protected
block)
WEL
(write enable
latch)
WIP
(write in
progress bit)
1=status
register write
disabled
0=status
register write
enabled
1=Quad
Enable
0=not Quad
Enable
(note 1) (note 1) (note 1) (note 1)
1=write
enable
0=not write
enable
1=write
operation
0=not in write
operation
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit
Non-volatile
bit volatile bit volatile bit
Status Register
The denition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write
status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status
register progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status
register cycle.
WEL bit. The Write Enable Latch (WEL) bit is a volatile bit that is set to “1” by the WREN instruction. WEL needs to be
set to “1” before the device can accept program and erase instructions, otherwise the program and erase instructions
are ignored. WEL automatically clears to “0” when a program or erase operation completes. To ensure that both WIP
and WEL are “0” and the device is ready for the next program or erase operation, it is recommended that WIP be
conrmed to be “0” before checking that WEL is also “0”. If a program or erase instruction is applied to a protected
memory area, the instruction will be ignored and WEL will clear to “0”.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area (as
dened in "Table 2. Protected Area Sizes") of the device to against the program/erase instruction without hardware
protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR)
instruction to be executed. Those bits dene the protected area of the memory to against Page Program (PP), Sector
Erase (SE), Block Erase (BE/BE32K) and Chip Erase (CE) instructions (only if Block Protect bits (BP3:BP0) set to 0,
the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default, which is un-protected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#,
RESET#/HOLD# are enable. While QE is "1", it performs Quad I/O mode and WP#, RESET#/HOLD# are disabled.
In the other word, if the system goes into four I/O mode (QE=1), the feature of HPM and RESET/HOLD will be
disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
31 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Conguration Register
The Conguration Register is able to change the default status of Flash memory. Flash memory will be congured
after the CR bit is set.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to congure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as “0”,
which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bit requires the Write Status Register (WRSR) instruction to be executed.
L/H switch bit
The Low Power / High Performance bit is a volatile bit. User can change the value of L/H switch bit to keep Ultra
Low Power mode or High Performance mode. Please check Ordering Information for the L/H Switch default
support.
Conguration Register - 1
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
Reserved
DC
(Dummy
Cycle)
Reserved Reserved
TB
(top/bottom
selected)
Reserved Reserved Reserved
x
2READ/
4READ
Dummy
Cycle
x x
0=Top area
protect
1=Bottom
area protect
(Default=0)
xxx
x Volatile bit x x OTP x x x
Conguration Register - 2
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
Reserved Reserved Reserved Reserved Reserved Reserved L/H Switch Reserved
xxxxxx
0 = Ultra Low
power mode
1 = High
performance
mode
x
x x x x x x Volatile bit x
DC Numbers of Dummy
Cycles
2READ 0 (default) 4
1 8
4READ 0 (default) 6
1 10
Dummy Cycle Table
32 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-9. Read Conguration Register (RDCR)
The RDCR instruction is for reading Conguration Register Bits. The Read Conguration Register can be read
at any time (even in program/erase/write conguration register condition). It is recommended to check the Write
in Progress (WIP) bit before sending a new instruction when a program, erase, or write conguration register
operation is in progress.
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Conguration
Register data out on SO.
The SIO[3:1] are don't care.
Figure 14. Read Conguration Register (RDCR) Sequence
21 3456789 10 11 12 13 14 15
command
0
76543210
Configuration register-1 Out
High-Z
MSB
76543210
Configuration register-2 Out
MSB
7
SCLK
SI
CS#
SO
15h
Mode 3
Mode 0
33 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-10. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Conguration Register Bits. Before
sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write
Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2,
BP1, BP0) bits to dene the protected area of memory (as shown in "Table 2. Protected Area Sizes"). The WRSR
also can set or reset the Quad enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in
accordance with Write Protection (WP#/SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status
register. The WRSR instruction cannot be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits, 16 bits or 24 bits data boundary; otherwise, the instruction will be
rejected and not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select
(CS#) goes high. The Write in Progress (WIP) bit still can be checked during the Write Status Register cycle is in
progress. The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the
Write Enable Latch (WEL) bit is reset. Please note that there is another parameter, "Write Status Register cycle time
for Mode Changing Switching (tWMS)", which is only for the self-timed of Mode Switching. For more detail please
check "Table 17. AC Characteristics".
Figure 15. Write Status Register (WRSR) Sequence
21 3456789 10 11 12 13 14 15
Status
Register In
Configuration
Register -1 In
0
MSB
SCLK
SI
CS#
SO
01h
High-Z
command
Mode 3
Mode 0
16 17 18 19 20 21 22 23
765 4321 0 15 14 13 12 11 10 9 8
24 25 26 27 28 29 30 31
Configuration
Register -2 In
23 22 21 20 19 18 17 16
34 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is dened by BP3, BP2, BP1,
BP0, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is dened by BP3, BP2, BP1, BP0, is at software
protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and hardware protected mode by the WP#/SIO2 to against data modication.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only can
use software protected mode via BP3, BP2, BP1, BP0.
Table 7. Protection Modes
Note:
1. As dened by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in
"Table 2. Protected Area Sizes".
Mode Status register condition WP# and SRWD bit status Memory
Software protection
mode (SPM)
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
Hardware protection
mode (HPM)
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
35 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Figure 16. WRSR ow
WREN command
WRSR command
Write status register
data
RDSR command
WRSR successfully
Yes
Yes
WRSR fail
No
start
Verify OK?
WIP=0? No
RDSR command
Yes
WEL=1? No
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
36 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Figure 17. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
High-Z
01h
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
tWHSL tSHWL
SCLK
SI
CS#
WP#
SO
Note: WP# must be kept high until the embedded operation nish.
37 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-11. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The rst address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte address on
SI→ data out on SO→to end READ operation can use CS# to high at any time during data out.
Figure 18. Read Data Bytes (READ) Sequence
SCLK
SI
CS#
SO
23
21 3456789 10 28 29 30 31 32 33 34 35
22 21 3210
36 37 38
76543 1 7
0
Data Out 1
0
MSB
MSB
2
39
Data Out 2
03h
High-Z
command
Mode 3
Mode 0
24-Bit Address
38 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The rst address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ instruction code→
3-byte address on SI→1-dummy byte (default) address on SI→ data out on SO→ to end FAST_READ operation
can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 19. Read at Higher Speed (FAST_READ) Sequence
23
21 3456789 10 28 29 30 31
22 21 3210
High-Z
0
32 33 34 36 37 38 39 40 41 42 43 44 45 46
765432 0
1
DATA OUT 1
Dummy Cycle
MSB
76543210
DATA OUT 2
MSB MSB
7
47
765432 0
1
35
SCLK
SI
CS#
SO
SCLK
SI
CS#
SO
0Bh
Command
Mode 3
Mode 0
24-Bit Address
10-12. Read Data Bytes at Higher Speed (FAST_READ)
39 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-13. Dual Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial NOR Flash in read mode. The address is latched on
rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at
a maximum frequency fT. The rst address byte can be at any location. The address is automatically increased
to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single
DREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once
writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing DREAD instruction is: CS# goes low → sending DREAD instruction → 3-byte address
on SI → 8-bit dummy cycle → data out interleave on SIO1 & SIO0 → to end DREAD operation can use CS# to
high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 20. Dual Read Mode Sequence (Command 3B)
High Impedance
21 3456780
SCLK
SI/SIO0
SO/SIO1
CS#
930 31 32 39 40 41 43 44 4542
3B D4
D5
D2
D3
D7
D6 D6 D4
D0
D7 D5
D1
Command 24 ADD Cycle 8 dummy
cycle
A23 A22 A1 A0
… …
…
Data Out
1
Data Out
2
40 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-14. 2 x I/O Read Mode (2READ)
The 2READ instruction enables Double Transfer Rate of Serial NOR Flash in read mode. The address is latched
on rising edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of
SCLK at a maximum frequency fT. The rst address byte can be at any location. The address is automatically
increased to the next higher address after each byte data is shifted out, so the whole memory can be read out
at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been reached.
Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous
1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 24-bit address
interleave on SIO1 & SIO0→ 4-bit dummy cycle on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end
2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 21. 2 x I/O Read Mode Sequence (Command BB)
High Impedance
21 3456780
SCLK
SI/SIO0
SO/SIO1
CS#
9 18 19 20
BB(hex)
21 22 23 24 25 26 27 28 29
P0
P2
P1
P3
D4
D5
D2
D3
D7
D6 D6 D4
D0
D7 D5
D1
Command 12 ADD Cycle 4 dummy
cycle
A22 A20 A2 A0
A3 A1
A23 A21
…
…
…
Data Out
1
Data Out
2
Note: SI/SIO0 or SO/SIO1 should be kept "0h" or "Fh" in the rst two dummy cycles. In other words, P2=P0 or
P3=P1 is necessary.
41 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-15. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial NOR Flash in read mode. A Quad Enable (QE) bit of
status Register must be set to "1" before sending the QREAD instruction. The address is latched on rising edge
of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum
frequency fQ. The rst address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD
instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing
QREAD instruction, the following data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte address
on SI → 8-bit dummy cycle → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any
impact on the Program/Erase/Write Status Register current cycle.
Figure 22. Quad Read Mode Sequence (Command 6B)
High Impedance
21 3456780
SCLK
SI/SIO0
SO/SIO1
CS#
29
930 31 32 33 38 39 40 41 42
6B
High Impedance
SIO2
High Impedance
SIO3
8 dummy cycles
D4 D0
D5 D1
D6 D2
D7 D3
D4 D0
D5 D1
D6 D2
D7 D3
D4
D5
D6
D7
A23 A22 A2 A1 A0
Command 24 ADD Cycles Data
Out 1
Data
Out 2
Data
Out 3
…
…
…
42 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-16. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial NOR Flash in read mode. A Quad Enable (QE) bit of status
Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK,
and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency
fQ. The rst address byte can be at any location. The address is automatically increased to the next higher address
after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing 4READ instruction is: CS# goes low→ sending 4READ instruction→ 24-bit address
interleave on SIO3, SIO2, SIO1 & SIO0→2+4 dummy cycles→data out interleave on SIO3, SIO2, SIO1 & SIO0→ to
end 4READ operation can use CS# to high at any time during data out.
Another sequence of issuing 4READ instruction especially useful in random access is: CS# goes low→sending
4READ instruction→3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling
bit P[7:0]→ 4 dummy cycles →data out still CS# goes high → CS# goes low (reduce 4 Read instruction) →24-bit
random access address.
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh can
make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0];
likewise P[7:0]=FFh, 00h, AAh or 55h and afterwards CS# is raised and then lowered, the system then will escape
from performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
43 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Figure 23. 4 x I/O Read Mode Sequence
21 3456780
SCLK
SIO0
SIO1
SIO2
SIO3
CS#
9 1210 11 13 14
EBh P4 P0
P5 P1
P6 P2
P7 P3
15 16 17 18 19 20 21 22
23 24
Command 4 Dummy
Cycles
Performance
enhance
indicator (Note)
Mode 3
Mode 0
6 ADD Cycles
A21 A17 A13 A9 A5 A1
A8 A4 A0A20 A16 A12
A23 A19 A15 A11 A7 A3
A10 A6 A2A22 A18 A14
D4 D0
D5 D1
Data
Out 1
Data
Out 2
Data
Out 3
D4 D0
D5 D1
D4 D0
D5 D1
D6 D2
D7 D3
D6 D2
D7 D3
D6 D2
D7 D3
Mode 3
Mode 0
Note:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
44 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-17. Burst Read
This device supports Burst Read.
To set the Burst length, following command operation is required
Issuing command: “C0h” in the rst Byte (8-clocks), following 4 clocks dening wrap around enable with “0h” and
disable with“1h”.
Next 4 clocks is to dene wrap around depth. Denition as following table:
The wrap around unit is dened within the 256Byte page, with random initial address. It’s dened as “wrap-around
mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0h” command
in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change
wrap around depth, it is requried to issue another “C0h” command in which data=“0xh”. “EBh” supports wrap around
feature after wrap around enable. The device is default without Burst read.
Data Wrap Around Wrap Depth
00h Yes 8-byte
01h Yes 16-byte
02h Yes 32-byte
03h Yes 64-byte
1xh No X
0
CS#
SCLK
SIO
C0h D7 D6 D5 D4 D3 D2 D1 D0
1 2 3 4 6 7 8 9 10 1112 13 14 155
Mode 3
Mode 0
Figure 24. Burst Read
45 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-18. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles.
“EBh” command supports enhance mode. The performance enhance mode is not supported in dual I/O mode.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of
the rst clock as address instead of command cycle.
To exit enhance mode, a new fast read command whose rst two dummy cycles is not toggle then exit. Or issue
”FFh” command to exit enhance mode.
Notice: Performance Enhance can only be operated in high performance mode.
46 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Figure 25. 4 x I/O Read enhance performance Mode Sequence
21 3456780
SCLK
SIO0
SIO1
CS#
9 1210 11 13 14
EBh
15 16
n+1 ........... ...... ........... ...........n+7 n+9 n+13
17 18 19 20 21 22 n
SIO2
SIO3
SIO0
SIO1
SIO2
SIO3
Performance
enhance
indicator (Note)
SCLK
CS#
Performance
enhance
indicator (Note)
Mode 3
Mode 0
A21 A17 A13 A9 A5 A1
A8 A4 A0A20 A16 A12
A23 A19 A15 A11 A7 A3
A10 A6 A2A22 A18 A14
P4 P0
P5 P1
P6 P2
P7 P3
A21 A17 A13 A9 A5 A1
A8 A4 A0A20 A16 A12
A23 A19 A15 A11 A7 A3
A10 A6 A2A22 A18 A14
P4 P0
P5 P1
P6 P2
P7 P3
Command 4 Dummy
Cycles
4 Dummy
Cycles
6 ADD Cycles
6 ADD Cycles
D4 D0
D5 D1
Data
Out 1
Data
Out 2
Data
Out n
D4 D0
D5 D1
D4 D0
D5 D1
D6 D2
D7 D3
D6 D2
D7 D3
D6 D2
D7 D3
D4 D0
D5 D1
Data
Out 1
Data
Out 2
Data
Out n
D4 D0
D5 D1
D4 D0
D5 D1
D6 D2
D7 D3
D6 D2
D7 D3
D6 D2
D7 D3
Mode 3
Mode 0
Note:
1. Performance enhance mode, if P7≠P3 & P6≠P2 & P5≠P1 & P4≠P0 (Toggling), ex: A5, 5A, 0F, if not using
performance enhance recommend to keep 1 or 0 in performance enhance indicator.
2. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF
47 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Figure 26. Sector Erase (SE) Sequence
21 3456789 29 30 310
23 22 2 1 0
MSB
SCLK
CS#
SI
20h
Command
Mode 3
Mode 0
24-Bit Address
10-19. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see "Table 4. Memory Organization") is a valid address
for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the latest eighth of address
byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most signicant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte address on SI→
CS# goes high.
The SIO[3:1] are "don't care".
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked during the Sector Erase cycle is in progress. The WIP sets 1 during the
tSE timing, and sets 0 when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If
the sector is protected by BP3, BP2, BP1, BP0 bits, the Sector Erase (SE) instruction will not be executed on the
sector.
48 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-20. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 32K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable
Latch (WEL) bit before sending the Block Erase (BE32K). Any address of the block (see "Table 4. Memory
Organization") is a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte
boundary (the least signicant bit of address byte has been latched-in); otherwise, the instruction will be rejected
and not executed.
The sequence of issuing BE32K instruction is: CS# goes low → sending BE32K instruction code → 3-byte
address on SI → CS# goes high.
The SIO[3:1] are don't care.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write
in Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during
the tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is
cleared. If the block is protected by BP3~0, the array data will be protected (no change) and the WEL bit still be
reset.
Figure 27. Block Erase 32KB (BE32K) Sequence (Command 52)
24 Bit Address
21 3456789 29 30 310
23 22 2 0
1
MSB
SCLK
CS#
SI
52h
Command
49 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-21. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
64K-byte block erase operation. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL)
bit before sending the Block Erase (BE). Any address of the block (Please refer to "Table 4. Memory Organization")
is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the latest
eighth of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte address on SI→
CS# goes high.
The SIO[3:1] are "don't care".
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked during the Block Erase cycle is in progress. The WIP sets 1 during the tBE
timing, and sets 0 when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the block
is protected by BP3, BP2, BP1, BP0 bits, the Block Erase (BE) instruction will not be executed on the block.
Figure 28. Block Erase (BE) Sequence
21 3456789 29 30 310
23 22 2 0
1
MSB
SCLK
CS#
SI
D8h
Command
Mode 3
Mode 0
24-Bit Address
50 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-22. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS#
must go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
The SIO[3:1] are "don't care".
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked during the Chip Erase cycle is in progress. The WIP sets 1 during the
tCE timing, and sets 0 when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
chip is protected by BP3, BP2, BP1, BP0 bits, the Chip Erase (CE) instruction will not be executed. It will be only
executed when BP3, BP2, BP1, BP0 all set to "0".
Figure 29. Chip Erase (CE) Sequence
21 345670
60h or C7h
SCLK
SI
CS#
Command
Mode 3
Mode 0
51 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-23. Page Program (PP)
The Page Program (PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction
must be executed to set the Write Enable Latch (WEL) bit before sending the Page Program (PP). The device
programs only the last 256 data bytes sent to the device. The last address byte (the 8 least signicant address
bits, A7-A0) should be set to 0 for 256 bytes page program. If A7-A0 are not all zero, transmitted data that exceed
page length are programmed from the starting address (24-bit address that last 8 bit are all 0) of currently selected
page. If the data bytes sent to the device exceeds 256, the last 256 data byte is programmed at the request page
and previous data will be disregarded. If the data bytes sent to the device has not exceeded 256, the data will be
programmed at the request address of the page. There will be no effort on the other data bytes of the same page.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on SI→ at
least 1-byte on data on SI→ CS# goes high.
The CS# must be kept low during the whole Page Program cycle; The CS# must go high exactly at the byte boundary (the
latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked during the Page Program cycle is in progress. The WIP sets 1 during the
tPP timing, and sets 0 when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the
page is protected by BP3, BP2, BP1, BP0 bits, the Page Program (PP) instruction will not be executed.
The SIO[3:1] are "don't care".
Figure 30. Page Program (PP) Sequence
4241 43 44 45 46 47 48 49 50 52 53 54 5540
23
21 3456789 10 28 29 30 31 32 33 34 35
22 21 3210
36 37 38
0
765432 0
1
Data Byte 1
39
51
765432 0
1
Data Byte 2
765432 0
1
Data Byte 3 Data Byte 256
2079
2078
2077
2076
2075
2074
2073
765432 0
1
2072
MSB MSB
MSB MSB MSB
SCLK
CS#
SI
SCLK
CS#
SI
02h
Command
Mode 3
Mode 0
24-Bit Address
52 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-24. Quad Input Page Program (QPP)
The Quad Input Page Program instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1"
before sending the Quad Input Page Program.
The Quad Input Page Programming takes four pins: SIO0, SIO1, SIO2, and SIO3 as data input, which can improve
programmer performance and the effectiveness of application. The other function descriptions are as same as
standard page program.
The sequence of issuing Quad Input Page Program instruction is: CS# goes low→ sending Quad Input Page
Program (32h) instruction code→ 3-byte address on SIO0→ at least 1-byte on data on SIO[3:0]→CS# goes high.
Figure 31. Quad Input Page Program Sequence
High Impedance
21 3456780
SCLK
SIO0
SIO1
CS#
29
930 31 32 33
32h
High Impedance
SIO2
High Impedance
SIO3
A23 A22 A2 A1 A0
Command 24 ADD Cycles
…
…
34
4 4 4 40 0 0 0
5 5 5 51 1 1 1
Data
Byte 1
Data
Byte 2
Data
Byte 3
Data
Byte 4
6 6 6 62 2 2 2
7 7 7 73 3 3 3
35 36 37 38 39
53 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-25. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN)
instruction must execute to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before
sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and
SIO3 as address and data input, which can improve programmer performance and the effectiveness of application.
The 4PP operation frequency supports as fast as f4PP. The other function descriptions are as same as standard
page program.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
Figure 32. 4 x I/O Page Program (4PP) Sequence
A20
A21 A17
A16 A12 A8 A4 A0
A13 A9 A5 A1
D4 D0
D5 D1
21 3456789
6 ADD cycles Data
Byte 1
Data
Byte 2
Data
Byte 3
Data
Byte 4
0
A22 A18 A14 A10 A6 A2
A23 A19 A15 A11 A7 A3
D6 D2
D7 D3
D4 D0
D5 D1
D6 D2
D7 D3
D4 D0
D5 D1
D6 D2
D7 D3
D4 D0
D5 D1
D6 D2
D7 D3
SCLK
CS#
SIO0
SIO1
SIO3
SIO2
38h
Command
10 11 12 13 14 15 16 17 18 19 20 21
Mode 3
Mode 0
54 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
21 345670
Deep Power-down ModeStand-by Mode
SCLK
CS#
SI
B9h
Command
Mode 3
Mode 0
tDP tDPDD
Stand-by Mode
tRDP
tCRDP
10-26. Deep Power-down (DP)
The Deep Power-down (DP) instruction places the device into a minimum power consumption state, Deep Power
down mode, in which the quiescent current is reduced from ISB1 to ISB2.
The sequence of issuing DP instruction: CS# goes low→ send DP instruction code→ CS# goes high. The CS# must
go high at the byte boundary; otherwise the instruction will not be executed. SIO[3:1] are "don't care".
After CS# goes high there is a delay of tDP before the device transitions from Stand-by mode to Deep Power-down
mode and the current reduces from ISB1 to ISB2. Once in Deep Power-down mode, all instructions will be ignored.
CS# must not be pulsed low until the device has been in Deep Power-down mode for a minimum of tDPDD. The
device exits Deep Power-down mode and returns to Stand-by mode if CS# pulses low for tCRDP or if the device is
power-cycled or hardware reset. After CS# goes high, there is a delay of tRDP before the device transitions from
Deep Power-down mode back to Stand-by mode.
Figure 33. Deep Power-down (DP) Sequence and Release from Deep Power-down Sequence
55 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
10-27. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 8K-bit secured OTP mode. While the device is in 8K-bit Secured
OTP mode, array access is not available. The additional 8K-bit secured OTP is independent from main array, and
may be used to store unique serial number for system identier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
The SIO[3:1] are "don't care".
Please note that WRSR/WRSCUR commands are not acceptable during the access of secure OTP region, once
security OTP is lock down, only read related commands are valid.
10-28. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 8K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
The SIO[3:1] are "don't care".
10-29. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
The SIO[3:1] are "don't care".
The denition of the Security Register bits is as below:
Secured OTP Indicator bit. The Secured OTP indicator bit shows the secured OTP area is locked by factory or not.
When it is "0", it indicates non-factory lock; "1" indicates factory- lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for
customer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 1st 4K-bit
Secured OTP area cannot be updated any more.
Program Suspend Status bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation.
Users may use PSB to identify the state of ash memory. After the ash memory is suspended by Program Suspend
command, PSB is set to "1". PSB is cleared to "0" after program operation resumes.
Erase Suspend Status bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may
use ESB to identify the state of ash memory. After the ash memory is suspended by Erase Suspend command,
ESB is set to "1". ESB is cleared to "0" after erase operation resumes.
56 Rev. 1.6, October 27, 2017
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10-30. Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction
is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO bit)
for customer to lock-down the 1st 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the 1st 4K-bit Secured
OTP area cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
The SIO[3:1] are "don't care".
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
Table 8. Security Register Denition
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
Reserved E_FAIL P_FAIL Reserved
ESB (Erase
Suspend
status)
PSB
(Program
Suspend
status)
LDSO
(lock-down
1st 4K-bit
Secured
OTP)
Secured OTP
Indicator bit
(2nd 4K-bit
Secured
OTP)
Reserved
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
Reserved
0=Erase
is not
suspended
1=Erase is
suspended
(default=0)
0=Program
is not
suspended
1=Program
is suspended
(default=0)
0 = not
lockdown
1 = lock-down
(cannot
program/
erase
OTP)
0 =
nonfactory
lock
1 = factory
lock
non-volatile
bit volatile bit volatile bit volatile bit volatile bit volatile bit non-volatile
bit
non-volatile
bit
Reserved Read Only Read Only Read Only Read Only OTP Read Only
Program Fail Flag bit. The Program Fail bit shows the status of the last Program operation. The bit will be set to "1"
if the program operation failed or the program region was protected. It will be automatically cleared to "0" if the next
program operation succeeds. Please note that it will not interrupt or stop any operation in the ash memory.
Erase Fail Flag bit. The Erase Fail bit shows the status of last Erase operation. The bit will be set to "1" if the erase
operation failed or the erase region was protected. It will be automatically cleared to "0" if the next erase operation
succeeds. Please note that it will not interrupt or stop any operation in the ash memory.
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10-31. Program/Erase Suspend/Resume
The Suspend instruction interrupts a Page Program, Sector Erase, or Block Erase operation to allow access to
the memory array. After the program or erase operation has entered the suspended state, the memory array can
be read except for the page being programmed or the sector or block being erased ("Table 9. Readable Area of
Memory While a Program or Erase Operation is Suspended").
Table 9. Readable Area of Memory While a Program or Erase Operation is Suspended
Suspended Operation Readable Region of Memory Array
Page Program All but the Page being programmed
Sector Erase (4KB) All but the 4KB Sector being erased
Block Erase (32KB) All but the 32KB Block being erased
Block Erase (64KB) All but the 64KB Block being erased
When the Serial NOR Flash receives the Suspend instruction, there is a latency of tPSL or tESL ("Figure 35.
Suspend to Read/Program Latency") before the Write Enable Latch (WEL) bit clears to “0” and the PSB or ESB sets
to “1”, after which the device is ready to accept one of the commands listed in "Table 10. Acceptable Commands
During Program/Erase Suspend after tPSL/tESL" (e.g. FAST READ). Refer to "Table 17. AC Characteristics" for
tPSL and tESL timings. "Table 11. Acceptable Commands During Suspend (tPSL/tESL not required)" lists the
commands for which the tPSL and tESL latencies do not apply. For example, RDSR, RDSCUR, RSTEN, and RST
can be issued at any time after the Suspend instruction.
Security Register bit 2 (PSB) and bit 3 (ESB) can be read to check the suspend status. The PSB (Program Suspend
Bit) sets to “1” when a program operation is suspended. The ESB (Erase Suspend Bit) sets to “1” when an erase
operation is suspended. The PSB or ESB clears to “0” when the program or erase operation is resumed.
Table 10. Acceptable Commands During Program/Erase Suspend after tPSL/tESL
Command Name Command Code
Suspend Type
Program Suspend Erase Suspend
READ 03h • •
FAST READ 0Bh • •
DREAD 3Bh • •
QREAD 6Bh • •
2READ BBh • •
4READ EBh • •
RDSFDP 5Ah • •
RDID 9Fh • •
REMS 90h • •
SBL C0h • •
ENSO B1h • •
EXSO C1h • •
WREN 06h •
RESUME 7Ah or 30h • •
PP 02h •
QPP 32h •
4PP 38h •
58 Rev. 1.6, October 27, 2017
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P/N: PM2164
Table 11. Acceptable Commands During Suspend (tPSL/tESL not required)
Command Name Command Code
Suspend Type
Program Suspend Erase Suspend
WRDI 04h • •
RDSR 05h • •
RDCR 15h • •
RDSCUR 2Bh • •
RES ABh • •
RSTEN 66h • •
RST 99h • •
NOP 00h • •
Figure 34. Resume to Suspend Latency
CS#
tPRS: Program Resume to another Suspend
tERS: Erase Resume to another Suspend
Resume Command Suspend Command
tPRS / tERS
59 Rev. 1.6, October 27, 2017
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10-31-1. Erase Suspend to Program
The “Erase Suspend to Program” feature allows Page Programming while an erase operation is suspended. Page
Programming is permitted in any unprotected memory except within the sector of a suspended Sector Erase
operation or within the block of a suspended Block Erase operation. The Write Enable (WREN) instruction must be
issued before any Page Program instruction.
A Page Program operation initiated within a suspended erase cannot itself be suspended and must be allowed to
nish before the suspended erase can be resumed. The Status Register can be polled to determine the status of
the Page Program operation. The WEL and WIP bits of the Status Register will remain “1” while the Page Program
operation is in progress and will both clear to “0” when the Page Program operation completes.
10-32. Program Resume and Erase Resume
The Resume instruction resumes a suspended Page Program, Sector Erase, or Block Erase operation. Before
issuing the Resume instruction to restart a suspended erase operation, make sure that there is no Page Program
operation in progress.
Immediately after the Serial NOR Flash receives the Resume instruction, the WEL and WIP bits are set to “1” and
the PSB or ESB is cleared to “0”. The program or erase operation will continue until nished ("Figure 36. Resume
to Read Latency") or until another Suspend instruction is received. A resume-to-suspend latency of tPRS or tERS
must be observed before issuing another Suspend instruction ("Figure 34. Resume to Suspend Latency").
Please note that the Resume instruction will be ignored if the Serial NOR Flash is in “Performance Enhance Mode”.
Make sure the Serial NOR Flash is not in “Performance Enhance Mode” before issuing the Resume instruction.
Figure 35. Suspend to Read/Program Latency
CS#
tPSL / tESL
Suspend Command Read/Program Command
tPSL: Program latency
tESL: Erase latency
Notes:
1. Please note that Program only available after the Erase-Suspend operation
2. To check suspend ready information, please read security register bit2(PSB) and bit3(ESB)
Figure 36. Resume to Read Latency
CS#
tSE / tBE / tPP
Resume Command Read Command
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10-33. No Operation (NOP)
The "No Operation" command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
The SIO[3:1] are don't care.
10-34. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command and Reset (RST)
command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which
makes the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed rst to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
The SIO[3:1] are "don't care".
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. Longer latency time is required to recover from a
program operation than from other operations.
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Figure 39. High Voltage Operation Diagram
WP#
Vcc
tVhv(Note 1) tVhv(Note 2)
Vhv
(7V ~ 8V)
tVSL1
GND
Vcc
GND GND
GND
Vcc
Vcc (min.)
tVhv2 tVhv2
GND
CS#
GND
Vcc Vcc
Standby Mode
Note 1: Please note that the CS# can only go low after tVSL1+tVhv +tVhv2 timing during High Voltage Operation.
Note 2: Please note that the WP# can only start to go low after whole Erase/Program Operation has been done.
To check the operation status, user may check the status of WIP bit.
Note 3: tVhv(min.) = 250ns, tVSL 1(min.) = 800us; tVhv2(min.) = 0ns
Note 4: Vhv range is 7V(min.) ≤ Vhv ≤ 8(max.)
Note 5: The High Voltage Operation can only work during Vcc(min.) ≤ Vcc ≤ 2.0V
10-35. High Voltage Operation
The ash device supports High Voltage Operation. This opeartion allows user can have better performance in
following Program/Erase operation.
To enable High Voltage Opeartion, WP#/SIO2 need to apply Vhv during whole operation. If the voltage can not
sustain in Vhv range, the Program/Erase opeation might be failed. CS# can only go low after tVSL1+tVhv +tVhv2
timing during High Voltage Operation. WP# can only start to go low after whole Erase/Program Operation has been
done.
To check the operation status, user may check the status of WIP bit.
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10-36. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial ash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is same as FAST_READ: CS# goes low→send RDSFDP instruction
(5Ah)→send 3 address bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP
operation can use CS# to high at any time during data out.
SFDP is a JEDEC Standard, JESD216B.
For SFDP register values detail, please contact local Macronix sales channel for Application Note.
Figure 40. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
23
21 3456789 10 28 29 30 31
22 21 3210
High-Z
24 BIT ADDRESS
0
32 33 34 36 37 38 39 40 41 42 43 44 45 46
765432 0
1
DATA OUT 1
Dummy Cycle
MSB
76543210
DATA OUT 2
MSB MSB
7
47
765432 0
1
35
SCLK
SI
CS#
SO
SCLK
SI
CS#
SO
5Ah
Command
64 Rev. 1.6, October 27, 2017
MX25R8035F
10-37. Factory Mode Sector Erase
To apply Factory Mode Sector Erase, customers need to follow the operation below:
Factory Mode Enable (FMEN): The Factory Mode Enable (FMEN) instruction is for enhancing Sector Erase
performance, which increase factory production throughput. The FMEN instruction will need to be combined with the
SE instruction when user intends to change the device content.
A valid factory mode operation need to include three sequences: WREN instruction → FMEN instruction→ Sector
Erase instruction. The sequence of issuing FMEN instruction is: CS# goes low→send FMEN instruction code→ CS#
goes high. Please note that Suspend command is not acceptable during factory mode.
The FMEN will be reset in following situations: Power-up, Reset# pin driven low, Sector Erase command completion,
and Softreset command completion.
Figure 41. Factory Mode Sector Erase Flow
WREN Command
Sector Erase Command*
Start
Factory Mode
Sector Erase Completed
FMEN Command
Yes
Factory Status Bit
[7:0]=FFh?
No
Read Factory
Status Command
RDSR Command
WEL=1?
No
Yes
Note: * Please reference Program/Erase flow chart in datasheet.
P/N: PM2164
65 Rev. 1.6, October 27, 2017
MX25R8035F
10-38. Factory Mode 32KB Block Erase
To apply Factory Mode 32KB Block Erase, customers need to follow the operation below:
Factory Mode Enable (FMEN): The Factory Mode Enable (FMEN) instruction is for enhancing 32KB Block Erase
performance, which increase factory production throughput. The FMEN instruction will need to be combined with the
BE32K instruction when user intends to change the device content.
A valid factory mode operation need to include three sequences: WREN instruction → FMEN instruction→ BE32K
instruction. The sequence of issuing FMEN instruction is: CS# goes low→send FMEN instruction code→ CS# goes
high. Please note that Suspend command is not acceptable during factory mode.
The FMEN will be reset in following situations: Power-up, Reset# pin driven low, BE32K command completion, and
Softreset command completion.
Figure 42. Factory Mode 32KB Block Erase Flow
WREN Command
32KB Block Erase Command*
Start
Factory Mode
BE32K Completed
FMEN Command
Yes
Factory Status Bit
[7:0]=FFh?
No
Read Factory
Status Command
RDSR Command
WEL=1?
No
Yes
Note: * Please reference Program/Erase flow chart in datasheet.
P/N: PM2164
66 Rev. 1.6, October 27, 2017
MX25R8035F
10-39. Factory Mode 64KB Block Erase
To apply Factory Mode 64KB Block Erase, customers need to follow the operation below:
Factory Mode Enable (FMEN): The Factory Mode Enable (FMEN) instruction is for enhancing 64KB Block Erase
performance, which increase factory production throughput. The FMEN instruction will need to be combined with the
BE instruction when user intends to change the device content.
A valid factory mode operation need to include three sequences: WREN instruction → FMEN instruction→ BE
instruction. The sequence of issuing FMEN instruction is: CS# goes low→send FMEN instruction code→ CS# goes
high. Please note that Suspend command is not acceptable during factory mode.
The FMEN will be reset in following situations: Power-up, Reset# pin driven low, BE command completion, and
Softreset command completion.
Figure 43. Factory Mode Block Erase Flow
WREN Command
64KB Block Erase Command*
Start
Factory Mode
BE Completed
FMEN Command
Yes
Factory Status Bit
[7:0]=FFh?
No
Read Factory
Status Command
RDSR Command
WEL=1?
No
Yes
Note: * Please reference Program/Erase flow chart in datasheet.
P/N: PM2164
67 Rev. 1.6, October 27, 2017
MX25R8035F
10-40. Factory Mode Chip Erase
To apply Factory Mode Chip Erase, customers need to follow the operation below:
Factory Mode Enable (FMEN): The Factory Mode Enable (FMEN) instruction is for enhancing Chip Erase
performance, which increase factory production throughput. The FMEN instruction will need to be combined with the
CE instruction when user intends to change the device content.
A valid factory mode operation need to include three sequences: WREN instruction → FMEN instruction→ CE
instruction. The sequence of issuing FMEN instruction is: CS# goes low→send FMEN instruction code→ CS# goes
high. Please note that Suspend command is not acceptable during factory mode.
The FMEN will be reset in following situations: Power-up, Reset# pin driven low, CE command completion, and
Softreset command completion.
Figure 44. Factory Mode Chip Erase Flow
WREN Command
Chip Erase Command*
Start
Factory Mode
CE Completed
FMEN Command
Yes
Factory Status Bit
[7:0]=FFh?
No
Read Factory
Status Command
RDSR Command
WEL=1?
No
Yes
Note: * Please reference Program/Erase flow chart in datasheet.
P/N: PM2164
68 Rev. 1.6, October 27, 2017
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P/N: PM2164
10-41. Read Factory Status
• Read Factory Status command is used to read chip status and check it is at factory mode or not.
• Like RDSR (Read Status Register, 05h), factory status will be outputted to the SO pin following this Read Factory
Status command.
• Factory status bit [7:0] shows Factory mode indicators. FMEN command can set them to 1, and the bits will
automatically be reset after the end of erase operation.
21 3456789 10 11 12 13 14 15
command
0
76543210
Factory Status Register Out
High-Z
MSB
76543210
MSB
7
SCLK
SI
CS#
SO
44h
Mode 3
Mode 0
Factory Status Register Out
Figure 45. Read Factory Status Register
BIT7 BIT6 BIT5 BIT4 BIT3 BIT2 BIT1 BIT0
FACTORY_
MODE
FACTORY_
MODE
FACTORY_
MODE
FACTORY_
MODE
FACTORY_
MODE
FACTORY_
MODE
FACTORY_
MODE
FACTORY_
MODE
69 Rev. 1.6, October 27, 2017
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P/N: PM2164
11. RESET
Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at
the following states:
- Standby mode
- All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on.
If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data
could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to
minimum.
Figure 46. RESET Timing
tRHSL
tRS
tRH
tRLRH
tREADY1 / tREADY2
SCLK
RESET#
CS#
Symbol Parameter Min. Typ. Max. Unit
tRHSL Reset# high before CS# low 10 us
tRS Reset# setup time 15 ns
tRH Reset# hold time 15 ns
tRLRH Reset# low pulse width 10 us
tREADY1 Reset Recovery time 35 us
Table 12. Reset Timing-(Power On)
Symbol Parameter Min. Typ. Max. Unit
tRHSL Reset# high before CS# low 10 us
tRS Reset# setup time 15 ns
tRH Reset# hold time 15 ns
tRLRH Reset# low pulse width 10 us
tREADY2
Reset Recovery time (During instruction decoding) 30 us
Reset Recovery time (for read operation) 30 us
Reset Recovery time (for program operation) 80 us
Reset Recovery time(for SE4KB operation) 12 ms
Reset Recovery time (for BE32K/64K operation) 12 ms
Reset Recovery time (for Chip Erase operation) 12 ms
Reset Recovery time (for WRSR operation) 0.1 ms
Table 13. Reset Timing-(Other Operation)
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12. POWER-ON STATE
The device is at the following states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage until the VCC reaches the following levels:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the ash device has no response to any command.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
The device can accept read command after VCC reached VCC minimum and a time delay of tVSL.
Please refer to the "Figure 54. Power-up Timing".
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is
recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response to
any command. The data corruption might occur during this stage if a write, program, erase cycle is in progress.
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13. ELECTRICAL SPECIFICATIONS
Figure 47. Maximum Negative Overshoot Waveform Figure 48. Maximum Positive Overshoot Waveform
0V
-1.0V
20ns
VCC+1.0V
VCC
20ns
NOTICE:
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to
the device. This is stress rating only and functional operational sections of this specication is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot to VCC+1.0V or -1.0V for period up to 20ns.
Table 14. Absolute Maximum Ratings
Rating Value
Ambient Operating Temperature Industrial grade -40°C to 85°C
Storage Temperature -65°C to 150°C
Applied Input Voltage -0.5V to VCC+0.5V
Applied Output Voltage -0.5V to VCC+0.5V
VCC to Ground Potential MX25R (1.65V-3.6V) -0.5V to 4.0V
Table 15. Capacitance
TA = 25°C, f = 1.0 MHz
Symbol Parameter Min. Typ. Max. Unit Conditions
CIN Input Capacitance 6 pF VIN = 0V
COUT Output Capacitance 8 pF VOUT = 0V
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Figure 49. Input Test Waveforms and Measurement Level
Figure 50. Output Loading
AC
Measurement
Level
Input timing reference level Output timing reference level
0.8VCC 0.7VCC
0.3VCC
0.5VCC
0.2VCC
Note: Input pulse rise and fall time are <5ns
DEVICE UNDER
TEST
CL 25K ohm
25K ohm
VCC
CL=15/30pF Including jig capacitance
Figure 51. SCLK TIMING DEFINITION
VIH (Min.)
0.5VCC
VIL (Max.)
tCHCL
tCH
1/fSCLK
tCL
tCLCH
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Table 16. DC Characteristics
Notes :
1. Device operation range: 1.65V-3.6V, Typical values at VCC = 1.8V, T = 25°C.
These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
Symbol Parameter Notes Min. Typ. Max. Units Test Conditions
ILI Input Load Current 1 ±2 uA VCC = VCC Max,
VIN = VCC or GND
ILO Output Leakage Current 1 ±2 uA VCC = VCC Max,
VOUT = VCC or GND
ISB1 VCC Standby Current 1 5 24 uA VIN = VCC or GND,
CS# = VCC
ISB2 Deep Power-down
Current 0.007 0.35 uA VIN = VCC or GND,
CS# = VCC
ICC1 VCC Read 1
2.8 4.5 mA
f=16MHz (4x I/O)
SCLK=0.1VCC/0.9VCC,
SO=Open
2.2 4 mA
f=33MHz
SCLK=0.1VCC/0.9VCC,
SO=Open
2.2 4 mA
f=16MHz (2x I/O)
SCLK=0.1VCC/0.9VCC,
SO=Open
ICC2 VCC Program Current
(PP) 1 3.5 6 mA Program in Progress,
CS# = VCC
ICC3 VCC Write Status
Register (WRSR) Current 3.1 6 mA Program status register in
progress, CS#=VCC
ICC4
VCC Sector/Block (64K)
Erase Current
(SE/BE)
1 3.1 6 mA Erase in Progress,
CS#=VCC
ICC5 VCC Chip Erase Current
(CE) 1 3.1 6 mA Erase in Progress,
CS#=VCC
Vhv High Voltage Applied at
WP# pin 7 8 V Test Condition, VCC=2.0V
VIL Input Low Voltage -0.5 0.2VCC V
VIH Input High Voltage 0.8VCC VCC+0.4 V
VOL Output Low Voltage 0.2 V IOL = 100uA
VOH Output High Voltage VCC-0.2 V IOH = -100uA
Ultra Low Power Mode (Conguration Register-2 bit1= 0):
74 Rev. 1.6, October 27, 2017
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Notes :
1. Device operation range: 1.65V-3.6V, Typical values at VCC = 1.8V, T = 25°C.
These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
Symbol Parameter Notes Min. Typ. Max. Units Test Conditions
ILI Input Load Current 1 ±2 uA VCC = VCC Max,
VIN = VCC or GND
ILO Output Leakage Current 1 ±2 uA VCC = VCC Max,
VOUT = VCC or GND
Iwph Leakage Current while
WP# at Vhv 30 uA VCC < 2.1V
ISB1 VCC Standby Current 1 9 40 uA VIN = VCC or GND,
CS# = VCC
ISB2 Deep Power-down
Current 0.007 0.35 uA VIN = VCC or GND,
CS# = VCC
ICC1 VCC Read 1
4.2 6.7 mA
f=108MHz
SCLK=0.1VCC/0.9VCC,
SO=Open
5 8 mA
f=104MHz (2x I/O)
SCLK=0.1VCC/0.9VCC,
SO=Open
3.9 6.5 mA
f=33MHz (4x I/O)
SCLK=0.1VCC/0.9VCC,
SO=Open
6.5 9.5 mA
f=104MHz (4x I/O)
SCLK=0.1VCC/0.9VCC,
SO=Open
ICC2 VCC Program Current
(PP) 1 5.8 10 mA Program in Progress,
CS# = VCC
ICC3 VCC Write Status
Register (WRSR) Current 3.5 10 mA Program status register in
progress, CS#=VCC
ICC4
VCC Sector/Block (64K)
Erase Current
(SE/BE)
1 3.5 10 mA Erase in Progress,
CS#=VCC
ICC5 VCC Chip Erase Current
(CE) 1 4 10 mA Erase in Progress,
CS#=VCC
Vhv High Voltage Applied at
WP# pin 7 8 V Test Condition, VCC=2.0V
VIL Input Low Voltage -0.5 0.2VCC V
VIH Input High Voltage 0.8VCC VCC+0.4 V
VOL Output Low Voltage 0.2 V IOL = 100uA
VOH Output High Voltage VCC-0.2 V IOH = -100uA
High Performance Mode (Conguration Register-2 bit1= 1):
75 Rev. 1.6, October 27, 2017
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Table 17. AC Characteristics
Symbol Alt. Parameter Min. Typ.(2) Max. Unit
fSCLK fC
Clock Frequency for the following instructions:
FAST_READ, RDSFDP, PP, SE, BE32K, BE, CE, DP, RES,
WREN, WRDI, RDID, RDSR, WRSR(7) D.C. 33 MHz
fRSCLK fR Clock Frequency for READ instructions 33 MHz
fTSCLK fT Clock Frequency for 2READ/DREAD instructions 16 MHz
fQ Clock Frequency for 4READ/QREAD instructions 16 MHz
f4PP Clock Frequency for 4PP (Quad page program) 33 MHz
tCH(1) tCLH Clock High Time Others (fSCLK) 45% x (1/fSCLK) ns
Normal Read (fRSCLK) 13 ns
tCL(1) tCLL Clock Low Time Others (fSCLK) 45% x (1/fSCLK) ns
Normal Read (fRSCLK) 13 ns
tCLCH(9) Clock Rise Time (peak to peak) 0.1 V/ns
tCHCL(9) Clock Fall Time (peak to peak) 0.1 V/ns
tSLCH tCSS CS# Active Setup Time (relative to SCLK) 5 ns
tCHSL CS# Not Active Hold Time (relative to SCLK) 5 ns
tDVCH tDSU Data In Setup Time 2 ns
tCHDX tDH Data In Hold Time 3 ns
tCHSH CS# Active Hold Time (relative to SCLK) 5 ns
tSHCH CS# Not Active Setup Time (relative to SCLK) 5 ns
tSHSL tCSH CS# Deselect Time
From Read to next Read 15 ns
From Write/Erase/Program
to Read Status Register 30 ns
tSHQZ(9) tDIS Output Disable Time 8 ns
tCLQV tV Clock Low to Output Valid
Loading: 30pF/15pF
Loading: 30pF 12 ns
Loading: 15pF 10 ns
tCLQX tHO Output Hold Time 0 ns
tHLCH*HOLD# Active Setup Time (relative to SCLK) 8 ns
tCHHH*HOLD# Active Hold Time (relative to SCLK) 8 ns
tHHCH* HOLD# Not Active Setup Time (relative to SCLK) 8 ns
tCHHL*HOLD# Not Active Hold Time (relative to SCLK) 8 ns
tHHQX*tLZ HOLD# to Output Low-Z 10 ns
tHLQZ *tHZ HOLD# to Output High-Z 10 ns
tWHSL(3) Write Protect Setup Time 10 ns
tSHWL(3) Write Protect Hold Time 10 ns
tDP CS# High to Deep Power-down Mode 10 us
tDPDD Delay Time for Release from Deep Power-Down Mode
once entering Deep Power-Down Mode 30 us
tCRDP CS# Toggling Time before Release from Deep Power-Down
Mode 20 ns
tRDP Recovery Time for Release from deep power down mode 35 us
tW Write Status Register Cycle Time 10 30 ms
tWMS Write Status Register Cycle Time for Mode Switching 20 us
Ultra Low Power Mode (Conguration Register-2 bit1= 0):
* Depends on part number options.
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Symbol Alt. Parameter Min. Typ.(2) Max. Unit
tESL(8) Erase Suspend Latency 60 us
tPSL(8) Program Suspend Latency 60 us
tPRS (4) Latency between Program Resume and next Suspend 0.3 us
tERS (5) Latency between Erase Resume and next Suspend 0.3 us
tBP Byte-Program 40 100 us
Byte-Program (Applied Vhv at WP# pin) 32 100 us
tPP Page Program Cycle Time 3.2 10 ms
Page Program Cycle Time (Applied Vhv at WP# pin) 0.6 3.6 ms
tSE Sector Erase Cycle Time 58 240 ms
Sector Erase Cycle Time (Applied Vhv at WP# pin) 36 210 ms
tBE32K Block Erase (32KB) Cycle Time 0.4 1.75 s
Block Erase (32KB) Cycle Time (Applied Vhv at WP# pin) 0.22 1.05 s
tBE Block Erase (64KB) Cycle Time 0.8 3.5 s
Block Erase (64KB) Cycle Time (Applied Vhv at WP# pin) 0.43 2.1 s
tCE Chip Erase Cycle Time 15 30 s
Chip Erase Cycle Time (Applied Vhv at WP# pin) 5.4 16 s
Ultra Low Power Mode - Continued:
77 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Symbol Alt. Parameter Min. Typ.(2) Max. Unit
fSCLK fC
Clock Frequency for the following instructions:
FAST_READ, RDSFDP, PP, SE, BE32K, BE, CE, DP,
RES, WREN, WRDI, RDID, RDSR, WRSR(7)
D.C. 108 MHz
fRSCLK fR Clock Frequency for READ instructions 50 MHz
fTSCLK fT Clock Frequency for 2READ/DREAD instructions 104 MHz
fQ Clock Frequency for 4READ/QREAD instructions 104 MHz
f4PP Clock Frequency for 4PP (Quad page program) 104 MHz
tCH(1) tCLH Clock High Time Others (fSCLK) 45% x (1/fSCLK) ns
Normal Read (fRSCLK) 9 ns
tCL(1) tCLL Clock Low Time Others (fSCLK) 45% x (1/fSCLK) ns
Normal Read (fRSCLK) 9 ns
tCLCH(9) Clock Rise Time (peak to peak) 0.1 V/ns
tCHCL(9) Clock Fall Time (peak to peak) 0.1 V/ns
tSLCH tCSS CS# Active Setup Time (relative to SCLK) 5 ns
tCHSL CS# Not Active Hold Time (relative to SCLK) 5 ns
tDVCH tDSU Data In Setup Time 2 ns
tCHDX tDH Data In Hold Time 3 ns
tCHSH CS# Active Hold Time (relative to SCLK) 5 ns
tSHCH CS# Not Active Setup Time (relative to SCLK) 5 ns
tSHSL tCSH CS# Deselect Time
From Read to next Read 15 ns
From Write/Erase/Program
to Read Status Register 30 ns
tSHQZ(9) tDIS Output Disable Time 8 ns
tCLQV tV Clock Low to Output Valid
Loading: 30pF/15pF
Loading: 30pF 8 ns
Loading: 15pF 6 ns
tCLQX tHO Output Hold Time 0 ns
tHLCH*HOLD# Active Setup Time (relative to SCLK) 8 ns
tCHHH*HOLD# Active Hold Time (relative to SCLK) 8 ns
tHHCH* HOLD# Not Active Setup Time (relative to SCLK) 8 ns
tCHHL*HOLD# Not Active Hold Time (relative to SCLK) 8 ns
tHHQX*tLZ HOLD# to Output Low-Z 10 ns
tHLQZ *tHZ HOLD# to Output High-Z 10 ns
tWHSL (3) Write Protect Setup Time 10 ns
tSHWL (3) Write Protect Hold Time 10 ns
tDP CS# High to Deep Power-down Mode 10 us
tDPDD Delay Time for Release from Deep Power-Down Mode
once entering Deep Power-Down Mode 30 us
tCRDP CS# Toggling Time before Release from Deep Power-
Down Mode 20 ns
tRDP Recovery Time for Release from deep power down
mode 35 us
tW Write Status Register Cycle Time 9.5 20 ms
tWMS Write Status Register Cycle Time for Mode Switching 20 us
High Performance Mode (Conguration Register-2 bit1= 1):
* Depends on part number options.
78 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25°C. Not 100% tested.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Program operation may be interrupted as often as system request. The minimum timing of tPRS must be
observed before issuing the next program suspend command. However, in order for an Program operation to
make progress, tPRS ≥ 100us must be included in resume-to-suspend loop(s). Not 100% tested.
5. Erase operation may be interrupted as often as system request. The minimum timing of tERS must be observed
before issuing the next erase suspend command. However, in order for an Erase operation to make progress,
tERS ≥ 200us must be included in resume-to-suspend loop(s). The details are described in Macronix application
notes. Not 100% tested.
6. Test condition is shown as "Figure 49. Input Test Waveforms and Measurement Level", "Figure 50. Output
Loading".
7. WRSR speed max. is 33MHz when issuing WRSR for performance mode switch no matter High Performance
Mode to Ultra Low Power Mode or Ultra Low Power Mode to High Performance Mode.
8. Latency time is required to complete Erase/Program Suspend operation until WIP bit is "0".
9. The value guaranteed by characterization, not 100% tested in production.
Symbol Alt. Parameter Min. Typ.(2) Max. Unit
tESL(8) Erase Suspend Latency 40 us
tPSL(8) Program Suspend Latency 40 us
tPRS (4) Latency between Program Resume and next Suspend 0.3 us
tERS (5) Latency between Erase Resume and next Suspend 0.3 us
tBP Byte-Program 32 100 us
Byte-Program (Applied Vhv at WP# pin) 32 100 us
tPP Page Program Cycle Time 0.85 4 ms
Page Program Cycle Time (Applied Vhv at WP# pin) 0.6 3.6 ms
tSE Sector Erase Cycle Time 40 240 ms
Sector Erase Cycle Time (Applied Vhv at WP# pin) 36 210 ms
tBE32K Block Erase (32KB) Cycle Time 0.24 1.5 s
Block Erase (32KB) Cycle Time (Applied Vhv at WP# pin) 0.22 1.05 s
tBE Block Erase (64KB) Cycle Time 0.48 3 s
Block Erase (64KB) Cycle Time (Applied Vhv at WP# pin) 0.43 2.1 s
tCE Chip Erase Cycle Time 6 18 s
Chip Erase Cycle Time (Applied Vhv at WP# pin) 5.4 16 s
High Performance Mode - Continued:
79 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Notes :
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the gure, please refer to
"Table 17. AC Characteristics".
Symbol Parameter Notes Min. Max. Unit
tVR VCC Rise Time 1 500000 us/V
14. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in "Figure 52. AC Timing at Device Power-Up" and "Figure 53. Power-Down Sequence" are
for the supply voltages and the control signals at device power-up and power-down. If the timing in the gures is
ignored, the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 52. AC Timing at Device Power-Up
SCLK
SI
CS#
VCC
MSB IN
SO
tDVCH
High Impedance
LSB IN
tSLCH
tCHDX
tCHCL
tCLCH
tSHCH
tSHSL
tCHSHtCHSL
tVR
VCC(min)
GND
80 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Figure 53. Power-Down Sequence
CS#
SCLK
VCC
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
Figure 54. Power-up Timing
VCC
VCC(min)
Chip Selection is Not Allowed
tVSL
time
Device is fully accessible
VCC(max)
VWI
81 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
14-1. Initial Delivery State
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
Figure 55. Power Up/Down and Voltage Drop
Table 18. Power-Up/Down Voltage and Timing
VCC
Time
VCC (max.)
VCC (min.)
V
tPWD
tVSL
Chip Select is not allowed
Full Device
Access
Allowed
PWD
(max.)
Note: These parameters are characterized only.
Symbol Parameter Min. Max. Unit
tVSL VCC(min.) to device operation 800 us
VWI Write Inhibit Voltage MX25R (1.65V-3.6V) 1.1 1.5 V
VPWD
VCC voltage needed to below VPWD for
ensuring initialization will occur
Deep Power Mode 0.4 V
others 0.9 V
tPWD The minimum duration for ensuring initialization will occur 300 us
When powering down the device, VCC must drop below VPWD for at least tPWD to ensure the device will initialize
correctly during power up. Please refer to "Figure 55. Power Up/Down and Voltage Drop" and "Table 18. Power-
Up/Down Voltage and Timing" below for more details.
82 Rev. 1.6, October 27, 2017
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P/N: PM2164
15. ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical erase assumes the following conditions: 25°C, typical operation voltage and all zero pattern.
2. Under worst conditions of 85°C and minimum operation voltage.
3. System-level overhead is the time required to execute the rst-bus-cycle sequence for the programming
command.
4. Typical program assumes the following conditions: 25°C, typical VCC, and checkerboard pattern.
Parameter Min. Typ. (1) Max. (2) Unit
Write Status Register Cycle Time 10 30 ms
Sector Erase Cycle Time (4KB) 58 240 ms
Sector Erase Cycle Time (4KB) (Applied Vhv at WP# pin) 36 210 ms
Block Erase Cycle Time (32KB) 0.4 1.75 s
Block Erase Cycle Time (32KB) (Applied Vhv at WP# pin) 0.22 1.05 s
Block Erase Cycle Time (64KB) 0.8 3.5 s
Block Erase Cycle Time (64KB) (Applied Vhv at WP# pin) 0.43 2.1 s
Chip Erase Cycle Time 15 30 s
Chip Erase Cycle Time (Applied Vhv at WP# pin) 5.4 16 s
Byte Program Time 40(4) 100 us
Byte Program Time (Applied Vhv at WP# pin) 32 100 us
Page Program Time 3.2(4) 10 ms
Page Program Time (Applied Vhv at WP# pin) 0.6 3.6 ms
Erase/Program Cycle 100,000 cycles
Ultra Low Power Mode (Conguration Register-2 bit1= 0):
Parameter Min. Typ. (1) Max. (2) Unit
Write Status Register Cycle Time 9.5 20 ms
Sector Erase Cycle Time (4KB) 40 240 ms
Sector Erase Cycle Time (4KB) (Applied Vhv at WP# pin) 36 210 ms
Block Erase Cycle Time (32KB) 0.24 1.5 s
Block Erase Cycle Time (32KB) (Applied Vhv at WP# pin) 0.22 1.05 s
Block Erase Cycle Time (64KB) 0.48 3 s
Block Erase Cycle Time (64KB) (Applied Vhv at WP# pin) 0.43 2.1 s
Chip Erase Cycle Time 6 18 s
Chip Erase Cycle Time (Applied Vhv at WP# pin) 5.4 16 s
Byte Program Time 32(4) 100 us
Byte Program Time (Applied Vhv at WP# pin) 32 100 us
Page Program Time 0.85(4) 4 ms
Page Program Time (Applied Vhv at WP# pin) 0.6 3.6 ms
Erase/Program Cycle 100,000 cycles
High Performance Mode (Conguration Register-2 bit1= 1):
83 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Parameter Min. Typ. Max. Unit
Sector Erase Cycle Time (4KB) 19 ms
Block Erase Cycle Time (32KB) 154 ms
Block Erase Cycle Time (64KB) 295 ms
Chip Erase Cycle Time 1.4 s
Page Program Time 760 us
Erase/Program Cycle 50 cycles
16. ERASE AND PROGRAMMING PERFORMANCE (Factory Mode)
Notice:
1. Factory Mode must be operated in 20°C to 45°C and VCC 3.0V-3.6V.
2. In Factory mode, the Erase/Program operation should not exceed 50 cycles, and "ERASE AND PROGRAMMING
PERFORMANCE" 100k cycles will not be affected.
3. During factory mode, Suspend command (B0) cannot be executed.
17. LATCH-UP CHARACTERISTICS
Min. Max.
Input Voltage with respect to GND on all power pins, SI, CS# -1.0V 2 VCCmax
Input Voltage with respect to GND on SO -1.0V VCC + 1.0V
Current -100mA +100mA
Includes all pins except VCC. Test conditions: VCC = typical operation voltage, one pin at a time.
84 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
18. ORDERING INFORMATION
PART NO. Voltage Package Temperature RESET# /
HOLD# pin Default Mode
MX25R8035FM1IL0 1.65V-3.6V 8-SOP (150mil) -40°C to 85°CRESET# Ultra Low Power Mode
MX25R8035FM2IL0 1.65V-3.6V 8-SOP (200mil) -40°C to 85°CRESET# Ultra Low Power Mode
MX25R8035FZUIL0 1.65V-3.6V 8-USON (2x3mm) -40°C to 85°CRESET# Ultra Low Power Mode
MX25R8035FBDIL0 1.65V-3.6V 3-2-3 8-BALL WLCSP -40°C to 85°CRESET# Ultra Low Power Mode
MX25R8035FBEIL0 1.65V-3.6V 2x4 8-BALL WLCSP
(height: 0.48mm) -40°C to 85°CRESET# Ultra Low Power Mode
MX25R8035FM2IH0 1.65V-3.6V 8-SOP (200mil) -40°C to 85°CRESET# High Performance Mode
MX25R8035FZUIH0 1.65V-3.6V 8-USON (2x3mm) -40°C to 85°CRESET# High Performance Mode
MX25R8035FZUIH1 1.65V-3.6V 8-USON (2x3mm) -40°C to 85°CHOLD# High Performance Mode
MX25R8035FM1IH1 1.65V-3.6V 8-SOP (150mil) -40°C to 85°CHOLD# High Performance Mode
MX25R8035FM2IH1 1.65V-3.6V 8-SOP (200mil) -40°C to 85°CHOLD# High Performance Mode
MX25R8035FZUIH2 1.65V-3.6V 8-USON (2x3mm) -40°C to 85°CRESET# High Performance Mode
MX25R8035FZUIH3 1.65V-3.6V 8-USON (2x3mm) -40°C to 85°CHOLD# High Performance Mode
MX25R8035FBHIH2 1.65V-3.6V 2x4 8-BALL WLCSP
(height: 0.33mm) -40°C to 85°CRESET# High Performance Mode
Please contact Macronix regional sales for the latest product selection and available form factors.
85 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
19. PART NAME DESCRIPTION
MX 25R LM2 I
OPTION 1:
L: Ultra Low Power Mode (Default)
H: High Performance Mode (Default)
OPTION 2:
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M1: 8-SOP(150mil)
M2: 8-SOP(200mil)
ZN: 8-WSON (6x5mm)
ZU: 8-USON (2x3mm)
BD: 3-2-3 8-WLCSP
BE: 2x4 8-WLCSP (height: 0.48mm)
BH: 2x4 8-WLCSP (height: 0.33mm)
DENSITY & MODE:
8035F: 8Mb
DEVICE:
25R: Wide Range VCC Serial NOR Flash (1.65V-3.6V)
8035F 0
0: RESET#, Manufacturing Location
1: HOLD#, Manufacturing Location
2: RESET#, Manufacturing Location
3: HOLD#, Manufacturing Location
86 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
20. PACKAGE INFORMATION
20-1. 8 PIN SOP (150mil)
87 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
20-2. 8 PIN SOP (200mil)
88 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
20-3. 8 Land WSON (6x5mm)
89 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
20-4. 8 Land USON (2x3mm)
90 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
SCLKWP#/SIO2
RESET#
/SIO3*
SO/SIO1
CS#
SI/SIO0
GND
VCC
* RESET#/SIO3 or HOLD#/SIO3
Depends on part number options
Please contact local Macronix sales channel for complete package dimensions.
20-5. 3-2-3 Ball Array 8-BALL BGA (WLCSP)
91 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Please contact local Macronix sales channel for complete package dimensions.
SCLKWP#/SIO2
RESET#/SIO3*
SO/SIO1
CS#
SI/SIO0GND
VCC
* RESET#/SIO3 or HOLD#/SIO3
Depends on part number options
20-6. 2x4 Ball Array 8-BALL BGA (WLCSP) (Height: 0.48mm)
92 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
20-7. 2x4 Ball Array 8-BALL BGA (WLCSP) (Height: 0.33mm)
SCLKWP#/SIO2
RESET#/SIO3*
SO/SIO1
CS#
SI/SIO0GND
VCC
* RESET#/SIO3 or HOLD#/SIO3
Depends on part number options
Please contact local Macronix sales channel for complete package dimensions.
93 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
21. REVISION HISTORY
Revision No. Description Page Date
0.01 1. Added 32K byte block descriptions. P4,6,13,14,16, JAN/06/2015
P19-20,28,47,67
2. Added 200mil 8-SOP package. P5,8,82-83,85
3. Spec tightened. P4,7,40
4. Revised Security OTP function. P12,54-55
5. Updated suspend/resume descriptions. P56-59
6. Updated part name. P82-83
7. Update SFDP table P63
8. Updated parameters for DC/AC Characteristics. P71-76,80
9. Added notes 9-10 of "Table 17. AC Characteristics". P76
10. Revised the Conguration Register-2 bit 1 L/H Switch values. P7,29,71-75,80
11. Modied Block Diagram P9
0.02 1. Added WLCSP package and Part No. P5,8,62-65, MAR/19/2015
P82,83,88
2. Removed the AC table note of 4READ/QREAD clock rate P73-76
within 4Mb address
3. Removed the AC Parameter tLH/tHL/tRES1 P73,75
4. Updated parameters for DC/AC Characteristics P71-76
5. Updated Erase and Programming Performance P80
0.03 1. Added 2.3V-3.6V and 1.65V-2.0V option All APR/30/2015
2. Added HOLD# option All
3. Removed L/H Switch bit descriptions (defualt value) P30
0.04 1. Updated SFDP table to JEDEC SFDP Rev. B Table P61 MAY/14/2015
2. Content correction P70,75
1.0 1. Removed "Advanced Information" to align with the All AUG/07/2015
product status
2. Optimized Fast Read Clock Frequency in High Performance P4,7,67,70
Mode
3. Revised Deep Power-down (DP) descriptions and gure. P52
4. Added "Figure 39. High Voltage Operation Diagram" P60
5. Removed tRES2 P23,68,70
6. Modied VWI (2.3V-3.6V option) P74
7. Modied REMS description P24
8. Optimized typical tPRS/tERS values and descriptions P69,71
9. Modied ISB1 value P66,67
10. Removed Performance Enhance Mode Reset
1.1 1. Removed 2.3V-3.6V and 1.65V-2.0V option All SEP/23/2015
2. Modied ISB1 value (High Performance Mode) P67
3. Updated Erase/Program Cycle value denition P4,75
4. Modied tPRS/tERS descriptions P71
5. Updated Ordering Information P77
1.2 1. Optimized Fast fSCLK in High Performance Mode P4,7,67,70 FEB/24/2016
2. Optimized fRSCLK in High Performance Mode P70
3. Added a statement for product ordering information P77
4. Added bit6 information P30
5. Content modication P19,29,40,52,68,70
1.3 1. Optimized tREADY2/ISB2/tW values P62,66-68,70,75 JUL/28/2016
2. Updated tVR values P72,74
3. Updated package outline for 8-land USON (2x3mm) P82
94 Rev. 1.6, October 27, 2017
MX25R8035F
P/N: PM2164
Revision No. Description Page Date
1.4 1. Added Part No. : MX25R8035FZUIH3 P77,78 JAN/06/2017
2. Optimized tCH/tCL values (Normal Read) P70
3. Updated the note for the internal pull up status of P8
RESET#/SIO3, HOLD#/SIO3 and WP#/SIO2
4. Content correction. P29
1.5 1. Added "Quad Input Page Program (QPP)" information P14,17,20,21, JUN/16/2017
P52,57
2. Added "Figure 51. SCLK TIMING DEFINITION" P72
3. Added Factory Mode information P18,23,64-68,83
4. Added Part No. : MX25R8035FBEIL0 & MX25R8035FBHIH2 P84,92
1.6 1. Added Part No. : MX25R8035FZUIH2 P84 OCT/27/2017
2. Content and format modications for 8-WSON package outline P88
3. Format modications for package outline P86,87,89
4. Added Page Program Time (factory mode) values (typ.) P83
MX25R8035F
95
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specications without notice.
Except for customized products which have been expressly identied in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
personal injury, or severe property damages. In the event Macronix products are used in contradicted to their target
usage above, the buyer shall take any and all actions to ensure said Macronix's product qualied for its actual use
in accordance with the applicable laws and regulations; and Macronix as well as it’s suppliers and/or distributors
shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2014~2017. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, Nbit, Macronix
NBit, eLiteFlash, HybridNVM, HybridFlash, HybridXFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Book, Rich TV, OctaRAM, OctaBus, OctaFlash and
FitCAM. The names and brands of third party referred thereto (if any) are for identication purposes only.
For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
