1
TO-220F
VGS=-30V
Tch 150°C
L=1.25mH
VCC=50V *2
VDS 500V
*3
Ta=25°C
Tc=25°C
t=60sec,f=60Hz
Item Symbol Ratings Unit Remarks
Drain-source voltage V DS 500
VDSX 500
Continuous drain current ID±19
Pulsed drain current ID(puls] ±76
Gate-source voltage VGS ±30
Non-Repetitive IAS 19
Maximum avalanche current
Non-Repetitive EAS 245.3
Maximum avalanche energy
Maximum Drain-Source dV/dt dVDS/dt 20
Peak diode recovery dV/dt dV/dt 5
Max. power dissipation PD2.16
97
Operating and storage Tch +150
temperature range Tstg
Isolation voltage VISO 2 kVrms
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3683-01MR
FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Symbol Test Conditions
Zero gate voltage drain current IDSS VDS=500V VGS=0V
VDS=400V VGS=0V
VGS=±30V
ID=9.5A VGS=10V
ID=9.5A VDS=25V
VCC=300V ID=9.5A
VGS=10V
RGS=10 Ω
Min. Typ. Max. Units
V
V
µA
nA
Ω
S
pF
nC
A
V
µs
µC
ns
Min. Typ. Max. Units
Thermal resistance Rth(ch-c) channel to case
Rth(ch-a) channel to ambient 1.289
58.0 °C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA VGS=0V
ID= 250µA VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=250V
ID=19A
VGS=10V
L=1.25mH Tch=25°C
IF=19A VGS=0V Tch=25°C
IF=19A VGS=0V
-di/dt=100A/µs Tch=25°C
V
V
A
A
V
A
mJ
kV/s
kV/µs
W
°C
°C
500
3.0 5.0
25
250
10 100
0.29 0.38
7.5 15
1560 2340
230 345
812
29 43.5
13 19.5
56 84
812
34 51
13 19.5
10 15
19 1.20 1.50
0.57
7.0
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super F AP-G Series
200309
<
=
<
=
*2 See to Avalanche Energy Graph
*3 IF -ID, -di/dt=50A/µs, VCC BVDSS, Tch 150°C
<
=
<
=<
=
2
Characteristics
2SK3683-01MR FUJI POWER MOSFET
04812162024
0
10
20
30
40
50
7V
20V
10V
8V
6.5V
VGS=6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID= f(VDS):80 µs pul se test,T ch=25 °C
012345678910
0.1
1
10
100
ID[A]
VGS[V]
Ty pical Tran sfer Characteristic
ID= f(VGS):80 µs pu lse test,VDS=25V,Tch=25 °C
0.1 1 10 100
0.1
1
10
100
gfs [S]
ID [A]
Typ ical Tran sconductance
gfs=f(ID):80 µs pulse test,VDS= 25V,Tch=25 °C
0 10203040
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on) [ Ω ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 µs p u lse test ,Tch= 2 5 °C
10V
20V
8V
7V
6.5V
VGS=6V
-50 -25 0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RDS(on) [ Ω ]
Tch [°C]
typ.
max.
Drai n- Sou rce O n -sta te Resi stan ce
RDS(on)=f(Tch):ID=9.5A,VGS=10V
0 25 50 75 100 125 150
0
20
40
60
80
100
120
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [ °C]
3
2SK3683-01MR FUJI POWER MOSFET
-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Volt age vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250µA
VGS(th) [V]
Tch [°C] 0 102030405060
0
2
4
6
8
10
12
14
Qg [nC]
Typical G ate Charg e Characteristics
VGS=f(Qg):ID=19A,Tch=25 °C
VGS [V]
400V
250V
Vcc= 100V
100101102103
100
101
102
103
104
C [pF]
VDS [V ]
Ty p i cal Cap acitan c e
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.1
1
10
100
IF [A]
VSD [V]
Typ ical Forward Characteristics of Reverse Diode
IF=f( VSD):80 µs pulse t est,Tch=25 °C
10-1 100101102
100
101
102
103
Typical Switchin g Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10 Ω
td(on)
tr tf
td(off)
t [ns]
ID [A]
0 255075100125150
0
100
200
300
400
500
600
700
IAS=8A
IAS=12A
IAS=19A
EAV [mJ]
starting Tch [°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V,I (AV)< =19A
4
2SK3683-01MR FUJI POWER MOSFET
http://www.fujielectric.co.jp/denshi/scd/
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Singl e Puls e
Maxim um Avalanche Current Pulsewidth
IAV=f(tAV) :starting Tc h=25°C,Vcc=50V
Avalanche Cu r r ent I AV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximu m Transient Thermal Im p edance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [°C/W]
t [sec]
