Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMOD™
NF-Series Module
200 Amperes/600 Volts
CM200TL-12NF
1
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration,
with each transistor having a
reverse-connected super-fast
recovery free-wheel diode. All
components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ UPS
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM200TL-12NF is a 600V (VCES),
200 Ampere Six-IGBTMOD™
Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 200 12
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 5.32 135.0
B 4.33±0.02 110.0±0.5
C 3.07±0.02 78.0±0.5
D 4.33±0.02 110.0±0.5
E 0.24 6.05
F 0.69 17.5
G 0.41 10.5
H 1.02 26.0
J 1.92 48.75
K 0.51 13.0
L 0.71 18.0
M 0.46 11.7
Dimensions Inches Millimeters
N 0.74 18.7
P 0.54 13.75
Q 0.22 5.5 Dia.
R 1.20 30.5
S 0.98 25.0
T 1.82 46.3
U 0.43 11.0
V M5 M5
W 0.65 16.5
X 0.78 20.0
Y 1.04 26.5
Z 0.16 4.0
AA 0.95+0.04/-0.02 24.1+1.0/-0.5
Housing Types (J.S.T. Mfg. Co. Ltd.)
AB – B8P-VH-FB-B
AC – B2P-VH-FB-B
CM200TL-12NF
Six IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Characteristics Symbol CM200TL-12NF Units
Power Device Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 88°C)* IC 200 Amperes
Peak Collector Current (Tj ≤ 150°C) ICM 400** Amperes
Emitter Current*** IE 200 Amperes
Peak Emitter Current*** IEM 400** Amperes
Maximum Collector Dissipation (TC = 25°C, Tj < 150°C) PC 890 Watts
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M5 Main Terminal Screws — 31 in-lb
Module Weight (Typical) — 750 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 6 7 8 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 1.7 2.2 Volts
IC = 200A, VGE = 15V, Tj = 125°C — 1.7 — Volts
Input Capacitance Cies — — 30.0 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 3.7 nf
Reverse Transfer Capacitance Cres — — 1.2 nf
Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 800 — nC
Inductive Turn-on Delay Time td(on) — — 120 ns
Load Turn-on Rise Time tr VCC = 300V, IC = 200A, — — 100 ns
Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, — — 300 ns
Time Turn-off Fall Time tf RG = 3.1Ω, IE = 200A, — — 300 ns
Reverse Recovery Time*** trr Inductive Load Switching Operation — — 150 ns
Reverse Recovery Charge*** Qrr — 4.8 — µC
Emitter-Collector Voltage*** VEC IE = 200A, VGE = 0V — — 2.8 Volts
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
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CM200TL-12NF
Six IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/6 Module — — 0.14 °C/W
Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/6 Module — — 0.22 °C/W
Contact Thermal Resistance Rth(c-f) Per 1/6 Module, Thermal Grease Applied — 0.051 — °C/W
External Gate Resistance RG 3.1 — 31 Ω
*TC, Tf measured point is just under the chips.
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CM200TL-12NF
Six IGBTMOD™ NF-Series Module
200 Amperes/600 Volts
4
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
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