CMHSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMHSH-3 is a
silicon Schottky diode, epoxy molded in a SOD-123
surface mount package, designed for fast switching
applications requiring a low forward voltage drop.
MARKING CODE: CH3
SOD-123 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 30 V
Continuous Forward Current IF 200 mA
Peak Repetitive Forward Current IFRM 300 mA
Peak Forward Surge Current, tp<1.0s IFSM 600 mA
Power Dissipation PD 400 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 312.5 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR V
R=25V 2.0 μA
BVR I
R=100μA 30 V
VF I
F=100μA 240 mV
VF I
F=1.0mA 320 mV
VF I
F=10mA 400 mV
VF I
F=30mA 500 mV
VF I
F=100mA 1.0 V
CJ V
R=1.0V, f=1.0MHz 7.0 pF
trr I
F=IR=10mA, Irr=1.0mA, RL=100Ω 7.0 ns
R7 (16-February 2016)
www.centralsemi.com
CMHSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
LEAD CODE
1) Cathode
2) Anode
MARKING CODE: CH3
SOD-123 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R7 (16-February 2016)
R7 (16-February 2016)
www.centralsemi.com
CMHSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
TYPICAL ELECTRICAL CHARACTERISTICS
R7 (16-February 2016)
www.centralsemi.com
TYPICAL ELECTRICAL CHARACTERISTICS
CMHSH-3
SURFACE MOUNT SILICON
SCHOTTKY DIODE
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