OPTOELECTAOQHICS 420 (10.67) 328 (8.33) (Ah ~~, 062 (1.57) R (K) es NOM REFLECTIVE SURFACE 226 (5.74) MIN #26 AWG 300 (7.62) | {E) PX i =] .150 (3.81) | 4.5 (114.30) NOM 200 (5.08} --] | 380 ta CO) 703 117.86) oO (0} k || OPB703W OPB705W OPB704W FUNCTION WIRE COLOR (C) COLLECTOR WHITE (E) EMITTER BLUE (K) CATHOOE GREEN (A} ANODE ORANGE NOTES 1, DIMENSIONS ARE IN INCHES (mm). 2. TOLERANCE IS +.010 {.25) OPB703W - IR TRANSPARENT DUST COVER OPB704W - IR TRANSPARENT OUST COVER OPB705W - OFFSET LENS $T4018 REFLECTIVE OBJECT SENSORS OPB703W/OPB704W/OPB705W The OPB703W, OPB704W, and OPB705W consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field ot view. The area of the optimum response approximates a circle .200 in diameter. Leads are 26 AWG, PVC insulation, 4.5 (114.3 mm) minimum length, stripped and tinned. Phototransistor output. High Sensitivity. Low cost plastic housing. Pre wired with 4.5 inch, 26 gauge leads. OPB703W/OPB704W, dust cover; lens. OBP705W, offset lens.REFLECTIVE OBJECT SENSORS OPTOELECTRONICS Storage Temperature . 1... nt erent neta een ent tenner ae 40C to + 85C Operating Temperature 0.6. ene eee e nee een eae 40C to + 85C Soldering: Lead Temperature (Iron)... 0. eect e etn n eet n rete renee 240C for 5 sec. #9" Lead Temperature (Flow) 0... tne nee 260C for 10 sec. ?*) INPUT DIODE Continuous Forward Current... 6. nee Ene en ene een ene e eee 50 mA Reverse Voltage 6.6... en Ee ee tenn ened nent e tenet enna 5.0 Volts Power Dissipation 2.0... eee beeen eee ees 100 mW OUTPUT TRANSISTOR Collector-Emitter Voltage 000... nee teeter erent etna 30 Volts Emitter-Collector Voltage 2.00.0. 00 cece ene nee te tenn tented een eee 5.0 Volts Collector Current... EEE EERE DEEN TREE eee nena 25 mA Power Dissipation... 0.00.00 en nner dnt e eens 100 mw" PARAM ETER TEST CONDITIONS INPUT DIODE Forward Voltage VE _ 1.70 Vv r=40mA Reverse Leakage Current Ia _ 100 BA Va = 2.0V OUTPUT TRANSISTOR Emitter-Collector Breakdown BVeco 5 _ Vv lr = 100 vA, Ee=0 Collector-Emitter Breakdown BV ceo 30 _ Vv |, = 100 vA, Ee = 0 Collector-Emitter Leakage loco _ 100 nA Vee = 10.0V, Ee = 0 COUPLED On-State Collector Current OPB703W lewon 200 _ pA = 40 mA, Vo = 5 V, D = .150" OPB704W lerony 200 _ pA I; = 40 mA, Vee = 5 V, D = .150" 6 OPB70SW leroy 100 uA ; = 40 mA, Vor = SV, D = 150" 69 Crosstalk lex 20 pA jr = 40 MA, Vee = 5 V . Derate power dissipation linearly 1.67 mW/C above 25C. . RMA flux is recommended. 1 2. 3. Methanol or isopropyl! alcohols are recommended as cleaning agents. 4. Soldering iron tip Vie" (1.6 mm) from housing. 5. 6. 7, . Dis the distance from the assembly face to the reflective surface. . Measured using Eastman Kodak neutral test card with 90% diffused reflecting surface. . Cross talk is the photocurrent measured with current to the input diode and no reflective surface.