PSD Two-dimensional PSD S5990-01, S5991-01 Improved tetra-lateral type for surface mounting Features Applications l Large active area S5990-01: 4 x 4 mm S5991-01: 9 x 9 mm l Chip carrier package for surface mounting (automatic mounting with solder reflow) thin package: 1.26 mmt l Improved tetra-lateral type (pin-cushion type) delivers superior position detection l Evaluation circuit boards provided C4674 (DC signal processing circuit) C7563 (AC signal processing circuit) l Spot light detection l Pointing device (computer mouse, track-ball) l Position measurement Absolute maximum ratings (Ta=25 C) Parameter Reverse voltage Operating temperature Storage temperature Symbol VR Max. Topr Tstg Value 20 -20 to +60 -20 to +80 Unit V C C Electrical and optical characteristics (Ta=25 C) Parameter Spectral response range Peak sensitivity wavelength Photo sensitivity Interelectrode resistance Symbol p S Rie Condition Min. - S5990-01 Typ. 320 to 1100 960 0.6 7 Max. Min. - - S5991-01 Typ. Max. 320 to 1100 960 0.6 7 15 nm A/W k 250 m - A 50 nA - s 1000 - pF m =p Vb=0.1 V 5 15 5 =900 nm Position detection error E VR=5 V, spot light 70 150 150 size: 0.2 mm * =900 nm, VR=5 V Saturation photocurrent Ist 500 500 RL=1 k Dark current ID VR=5 V 0.5 10 1 VR=5 V, RL=1 k Rise time tr 1 2 =900 nm Terminal capacitance Ct VR=5 V, f=10 kHz 150 300 500 Position resolution 0.7 1.5 Io=1 A, B=1 kHz * R * In the range that is 80 % from the center to the edge. Recommended spot light size is larger than 0.2 mm. Unit nm Two-dimensional PSD S5990-01, S5991-01 Dark current vs. reverse voltage Spectral response (Typ. Ta=25 C) Terminal capacitance vs. reverse voltage (Typ. Ta=25 C) (Typ. Ta=25 C) 10 nA 0.8 10 nF TERMINAL CAPACITANCE S5991-01 1 nA 0.6 DARK CURRENT PHOTO SENSITIVITY (A/W) 0.7 0.5 0.4 0.3 S5990-01 100 pA 10 pA 0.2 S5991-01 1 nF 100 pF S5990-01 0.1 800 1 pA 0.1 900 1000 1100 1 WAVELENGTH (nm) (Ta=25 C, =830 nm, Spot light size: 0.2 mm) 100 10 pF 0.1 1 KPSDB0073EA Dimensional outlines (unit: mm) S5990-01 S5990-01 10.6 0.2 (4 x) R0.3 S5991-01 14.5 0.2 (4 x) R0.3 Y2 ACTIVE AREA 4.0 PHOTOSENSITIVE SURFACE Y2 o X1 INDEX MARK ACTIVE AREA X2 Y1 SILICONE RESIN o9.0 X1 (10 x) 0.6 1.27 (SCAN INTERVAL: 1 mm) 1.8 3.0 KPSDC0064EA ANODE X1 (I1) NC NC NC ANODE Y1 (I3) ANODE X2 (I2) NC CATHODE NC ANODE Y2 (I4) Burrs shall protrude no more than 0.3 mm on any side of package. 1.8 2.5 SILICONE RESIN Burrs shall protrude no more than 0.3 mm on any side of package. 1.5 1.5 X2 Y1 PHOTOSENSITIVE SURFACE S5991-01 100 KPSDB0068EA 8.8 0.15 (SCAN INTERVAL: 0.4 mm) 10 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) KPSDB0026EA Example of position detectability 10 1.26 0.15 700 0.46 600 16.5 0.2 500 0.46 400 1.26 0.15 0 300 10 (10 x) 1.2 2.54 pin should be open-circuited ANODE X1 (I1) NC NC NC ANODE Y1 (I3) ANODE X2 (I2) NC CATHODE NC ANODE Y2 (I4) pin should be open-circuited KPSDA0044EB KPSDA0045EA Conversion formula (I2 + I3) - (I1 + I4) 2x = I1 + I2 + I3 + I4 L KPSDC0065EA (I2 + I4) - (I1 + I3) 2y = I1 + I2 + I3 + I4 L x, y: position coordinate of spot light S5990-01: L=4.5 mm S5991-01: L=10 mm Precautions for use The light input window of this product uses soft silicone resin. Avoid touching the window to keep it from grime and damage that can decrease sensitivity. External force applied to the resin surface may deform or cut off the wires, so do not touch the window to prevent such troubles. Use rosin flux when soldering, to prevent the terminal lead corrosion. Reflow oven temperature should be at 260 C maximum for 5 seconds maximum time under the conditions that no moisture absorption occurs. Reflow soldering conditions differ depending on the type of PC board and reflow oven. Carefully check these conditions before use. Silicone resin swells when it absorbs organic solvent, so do not use any solvent other than alcohol. Avoid unpacking until you actually use this product to prevent the terminals from oxidation and dust deposits or the coated resin from absorbing moisture. When the product is stored for 3 months while not unpacked or 24 hours have elapsed after unpacking, perform baking in nitrogen atmosphere at 150 C for 3 to 5 hours or at 120 C for 12 to 15 hours before use. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2007 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Cat. No. KPSD1010E04 Dec. 2007 DN