POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated.
Thyristor Modules
Thyristor/Diode Modules
PSKT 312
PSKH 312
Preliminary Data Sheet
VRSM VRRM Type
VDSM VDRM
VV
1300 1200 PSKT 312-12io1 PSKH 312-12io1
1500 1400 PSKT 312-14io1 PSKH 312-14io1
1700 1600 PSKT 312-16io1 PSKH 312-16io1
1900 1800 PSKT 312-18io1 PSKH 312-18io1
Features
●International standard package
●Direct copper bonded Al2O3-ceramic
with copper base plate
●Planar passivated chips
●Isolation voltage 3600 V~
●UL registered E 148688
●Keyed gate/cathode twin pins
Applications
●Motor control, softstarter
●Power converter
●Heat and temperature control for
industrial furnaces and chemical
processes
●Lighting control
●Solid state switches
Advantages
●Simple mounting
●Improved temperature and power
cycling capability
●Reduced protection circuits
1
2
37654
PSKH
PSKT
3671 542
31542
ITRMS = 2x 520 A
ITAVM = 2x 320 A
VRRM = 1200-1800 V
Symbol Test Conditions Maximum Ratings
ITRMS, IFRMS TVJ = TVJM 520 A
ITAVM, IFAVM TC = 85°C; 180° sine 320 A
ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz) 9200 A
VR = 0 t = 8.3 ms (60 Hz) 10100 A
TVJ = TVJM t = 10 ms (50 Hz) 8000 A
VR = 0 t = 8.3 ms (60 Hz) 8800 A
∫∫
∫∫
∫i2dt TVJ = 45°C t = 10 ms (50 Hz) 423 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 423 000 A2s
TVJ = TVJM t = 10 ms (50 Hz) 320 000 A2s
VR = 0 t = 8.3 ms (60 Hz) 321 000 A2s
(di/dt)cr TVJ = TVJM repetitive, IT = 960 A 100 A/µs
f =50 Hz, tP =200 µs
VD = 2/3 VDRM
IG = 1 A, non repetitive, IT = ITAVM 500 A/µs
diG/dt = 1 A/µs
(dv/dt)cr TVJ = TVJM; VDR = 2/3 VDRM 1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
PGM TVJ = TVJM tP = 30 µs 120 W
IT = ITAVM tP = 500 µs 60 W
PGAV 20 W
VRGM 10 V
TVJ -40...+140 °C
TVJM 140 °C
Tstg -40...+125 °C
VISOL 50/60 Hz, RMS t = 1 min 3000 V~
IISOL ≤ 1 mA t = 1 s 3600 V~
MdMounting torque (M6) 4.5-7/40-62 Nm/lb.in.
Terminal connection torque (M8) 11-13/97-115 Nm/lb.in.
Weight Typical including screws 750 g
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Symbol Test Conditions Characteristic Values
IRRM, IDRM TVJ = TVJM; VR = VRRM; VD = VDRM 40 mA
VT, VFIT, IF = 600 A; TVJ = 25°C 1.32 V
VT0 For power-loss calculations only (TVJ = 140°C) 0.8 V
rT0.68 m Ω
VGT VD = 6 V; TVJ = 25°C 2 V
TVJ = -40°C 3 V
IGT VD = 6 V; TVJ = 25°C 150 mA
TVJ = -40°C 220 mA
VGD TVJ = TVJM;V
D = 2/3 VDRM 0.25 V
IGD TVJ = TVJM;V
D = 2/3 VDRM 10 mA
ILTVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA
IG = 0.45 A; diG/dt = 0.45 A/µs
IHTVJ = 25°C; VD = 6 V; RGK = ∞150 mA
tgd TVJ = 25°C; VD = 1/2 VDRM 2µs
IG = 1 A; diG/dt = 1 A/µs
tqTVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 20 0 µ s
VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM
QSTVJ = 125°C; IT, IF = 300 A; -di/dt = 50 A/µs 760 µC
IRM 275 A
RthJC per thyristor (diode); DC current 0.12 K/W
per module other values 0.06 K/W
RthJK per thyristor (diode); DC current see Fig. 8/9 0.16 K/W
per module 0.08 K/W
dSCreeping distance on surface 12.7 m m
dACreepage distance in air 9.6 m m
aMaximum allowable acceleration 50 m/s2
Fig. 1 Gate trigger characteristics
Fig. 2 Gate trigger delay time
0.01 0.1 1 10
1
10
100
10-3 10-2 10-1 100101102
0.1
1
10
IG
VG
A
A
IG
1: IGT, TVJ = 140°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
µs
tgd
V
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
IGD, TVJ = 140°C
4
2
1
56
Limit
typ.
TVJ = 25°C
3
Dimensions in mm (1 mm = 0.0394")
PSKT PSKH
M8x20 M8x20
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POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
0 100 200 300 400 500
0
100
200
300
400
500
600
0 25 50 75 100 125 150
110
104
105
106
0 25 50 75 100 125 150
0.001 0.01 0.1 1
0
2000
4000
6000
8000
10000
0 200 400 600 800
0
500
1000
1500
2000
2500
3000
I2t
ITAVM / IFAVM
IdAVM
A
Ptot W
TA
TC
s
t
ms
t
A2s
0 25 50 75 100 125 150
0
100
200
300
400
500
600
ITSM A
A
°C
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 140°C
TVJ = 140°C
TVJ = 45°C
ITAVM
IFAVM
W
Ptot
A°C
0.6
0.8
0.1
0.2
0.3
0.4
RthKA K/W
0.06
0.2
0.15
0.1
0.07
0.04
0.02
0.3
°C
3xMCC312 or
3xMCD312
Circuit
B6
TA
RthKA K/W
180° sin
120°
60°
30°
DC
180° sin
120°
60°
30°
DC
VR = 0V
Fig. 5 Power dissipation versus on-
state current and ambient
temperature (per thyristor or
diode)
Fig. 3 Surge overload current
ITSM, IFSM: Crest value, t: duration
Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward current
at case temperature
Fig. 6 Three phase rectifier bridge:
Power dissipation versus direct
output current and ambient
temperature
3xPSKH 312 or
3xPSKT 312
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2003 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
RthJC for various conduction angles d:
d RthJC (K/W)
DC 0.120
180° 0.128
120° 0.135
60° 0.153
30° 0.185
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 0.0058 0.00054
2 0.031 0.098
3 0.072 0.54
4 0.0112 12
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
RthJK for various conduction angles d:
d RthJK (K/W)
DC 0.160
180° 0.168
120° 0.175
60° 0.193
30° 0.225
Constants for ZthJK calculation:
iR
thi (K/W) ti (s)
1 0.0058 0.00054
2 0.031 0.098
3 0.072 0.54
4 0.0112 12
5 0.04 12
t
ZthJK
s
t
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
K/W
ZthJC
IRMS
Ptot
0 25 50 75 100 125 1500 200 400 600
0
500
1000
1500
2000
2500
3000
0A
3xMCC312 or
3xMCD312
Circuit
W3
0.2
0.15
0.1
0.07
0.04
0.02
RthKA K/W
0.3
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
DC
180°
120°
60°
30°
DC
180°
120°
60°
30°
°C
TA
W
K/W
s
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3xPSKH 312 or
3xPSKT 312
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