© 2008 IXYS All rights reserved 1 - 3
DSEC 16-12AS
IXYS reserves the right to change limits, test conditions and dimensions. 20080811a
IFAV = 2x10 A
VRRM = 1200 V
trr = 40 ns
VRSM VRRM Type
V V
1200 1200 DSEC 16-12AS
Symbol Conditions Maximum Ratings
IFRMS 14 A
IFAVM TC = 115°C; rectangular, d = 0.5 10 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 40 A
EAS TVJ = 25°C; non-repetitive 6.9 mJ
IAS = 8 A; L = 180 µH
IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.8 A
TVJ -55...+175 °C
TVJM 175 °C
Tstg -55...+150 °C
Ptot TC = 25°C 60 W
FCmounting force 20...60 N
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
IRTVJ = 25°C VR= VRRM 60 µA
TVJ = 150°C VR= VRRM 0.25 mA
VFIF = 10 A; TVJ = 150°C 1.96 V
TVJ = 25°C 2.94 V
RthJC 2.5 K/W
RthCH 0.5 K/W
trr IF = 1 A; -di/dt = 50 A/µs; 40 ns
VR = 30 V; TVJ = 25°C
IRM VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs 8.5 A
TVJ = 100°C
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low IRM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0%
Pulse Width = 300 µs, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
TO-263 AB
A = Anode, C/TAB = Cathode
AC A
A
A
C (TAB)
© 2008 IXYS All rights reserved 2 - 3
DSEC 16-12AS
IXYS reserves the right to change limits, test conditions and dimensions. 20080811a
© 2008 IXYS All rights reserved 3 - 3
DSEC 16-12AS
IXYS reserves the right to change limits, test conditions and dimensions. 20080811a
200 600 10000 400 800
90
100
110
120
130
140
150
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0
500
1000
1500
2000
01234
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/μs
A
V
nC
A/μsA/μs
trr
ns
tfr
ZthJC
A/μs
μs
DSEP 8-12A / DSEC 16-12A
IF= 20A
IF= 10A
IF= 5A
TVJ= 100°C
VR = 600V TVJ= 100°C
IF = 10A
Fig. 3 Peak reverse current IRM
versus -diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
Fig. 1 Forward current IF versus VF
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
IF= 20A
IF= 10A
IF= 5A
Qr
IRM
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
IF= 20A
IF= 10A
IF= 5A
tfr VFR
Fig. 7 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 1.449 0.0052
2 0.558 0.0003
3 0.493 0.017
TVJ= 25°C
TVJ=100°C
TVJ=150°C
