JFET VHF Amplifier
N–Channel — Depletion
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain–Source Voltage VDS 25 Vdc
Drain–Gate Voltage VDG 25 Vdc
Gate–Source Voltage VGS –25 Vdc
Gate Current IG10 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD350
2.8 mW
mW/°C
Junction Temperature Range TJ125 °C
Storage Temperature Range Tstg –65 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10 µAdc, VDS = 0) V(BR)GSS –25 — Vdc
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
IGSS —
—–2.0
–2.0 nAdc
µAdc
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc) VGS(off) — –8.0 Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc) VGS –0.5 –7.5 Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc) IDSS 2.0 20 mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
yfs2000
1600 7500
—
mhos
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yis) — 800 mhos
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz) Re(yos) — 200 mhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Ciss — 7.0 pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz) Crss — 3.0 pF
1. Pulse Test; Pulse Width 630 ms, Duty Cycle 10%.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1 1Publication Order Number:
MPF102/D
MPF102
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
123
1 DRAIN
2 SOURCE
3
GATE
MPF102
http://onsemi.com
2
PG, POWER GAIN (dB)
POWER GAIN
2.0
ID, DRAIN CURRENT (mA)
Figure 1. Effects of Drain Current
4.0
24
8.0
12
16
20
0 4.0 6.0 8.0 10 12 14
f = 100 MHz
400 MHz
Tchannel = 25°C
VDS = 15 Vdc
VGS = 0 V
Figure 2. 100 MHz and 400 MHz Neutralized Test Circuit
*L1 17 turns, (approx. — depends upon circuit layout) AWG #28
enameled copper wire, close wound on 9/32″ ceramic coil
form. Tuning provided by a powdered iron slug.
*L2 4–1/2 turns, AWG #18 enameled copper wire, 5/16″ long,
3/8″ I.D. (AIR CORE).
*L3 3–1/2 turns, AWG #18 enameled copper wire, 1/4″ long,
3/8″ I.D. (AIR CORE).
**L1 6 turns, (approx. — depends upon circuit layout) AWG #24
enameled copper wire, close wound on 7/32″ ceramic coil
form. Tuning provided by an aluminum slug.
**L2 1 turn, AWG #16 enameled copper wire, 3/8″ I.D.
(AIR CORE).
**L3 1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D.
(AIR CORE).
Adjust VGS for
ID = 50 mA
VGS < 0 Volts
NOTE: The noise source is a hot–cold body
(AIL type 70 or equivalent) with a
test receiver (AIL type 136 or equivalent).
Reference
Designation VALUE
100 MHz 400 MHz
C1 7.0 pF 1.8 pF
C2 1000 pF 17 pF
C3 3.0 pF 1.0 pF
C4 1–12 pF 0.8–8.0 pF
C5 1–12 pF 0.8–8.0 pF
C6 0.0015 µF 0.001 µF
C7 0.0015 µF 0.001 µF
L1 3.0 µH* 0.2 µH**
L2 0.15 µH* 0.03 µH**
L3 0.14 µH* 0.022 µH**
INPUT
TO 50 Ω
SOURCE
NEUTRALIZING
COIL L1
C5
L3Rg′
C1
C6
C4 L2
C3
TO 500 Ω
LOAD
CASE
C7
COMMON ID = 5.0 mA
VGS VDS
+15 V
C2
MPF102
http://onsemi.com
3
NF, NOISE FIGURE (dB)
2.0
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
0
10
2.0
4.0
6.0
8.0
0 4.0 6.0 8.0 10 12 14
ID = 5.0 mA
100 MHz
VDS = 15 Vdc
f1 = 399 MHz
f2 = 400 MHz
NF, NOISE FIGURE (dB)
2.0
ID, DRAIN CURRENT (mA)
1.5
6.5
2.5
3.5
4.5
5.5
0 4.0 6.0 8.0 10 12 14
Figure 3. Effects of Drain–Source Voltage Figure 4. Effects of Drain Current
NOISE FIGURE
(Tchannel = 25°C)
Pin, INPUT POWER PER TONE (dB)
+40
Figure 5. Third Order Intermodulation Distortion
P , OUTPUT POWER PER TONE (dB)
out
16 18 20
f = 400 MHz f = 400 MHz
100 MHz
VDS = 15 V
VGS = 0 V
+20
0
-20
-40
-60
-80
-100
-120
-140
-160
-120 -100 -80 -60 -40 -20 0 +20
3RD ORDER INTERCEPT
FUNDAMENTAL
OUTPUT @ IDSS,
0.25 IDSS
3RD ORDER IMD
OUTPUT @ IDSS,
0.25 IDSS
INTERMODULATION CHARACTERISTICS
MPF102
http://onsemi.com
4
f, FREQUENCY (MHz)
30
10
bis @ IDSS
f, FREQUENCY (MHz)
5.0
Figure 6. Input Admittance (yis) Figure 7. Reverse Transfer Admittance (yrs)
COMMON SOURCE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz)
20
f, FREQUENCY (MHz)
10
Figure 8. Forward Transadmittance (yfs) Figure 9. Output Admittance (yos)
gis, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
bis, INPUT SUSCEPTANCE (mmhos)
gfs, FORWARD TRANSCONDUCTANCE (mmhos)
|bfs|, FORWARD SUSCEPTANCE (mmhos)
grs, REVERSE TRANSADMITTANCE (mmhos)
brs, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gos, OUTPUT ADMITTANCE (mhos)
bos, OUTPUT SUSCEPTANCE (mhos)
3.0
0.05
0.07
0.1
0.2
0.3
0.7
0.5
1.0
2.0
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10 20 30 50 70 100 200 300 500 700 1000
bis @ 0.25 IDSS
gis @ IDSS
gis @ 0.25 IDSS
brs @ IDSS
0.25 IDSS
grs @ IDSS, 0.25 IDSS
gfs @ IDSS
|bfs| @ IDSS
|bfs| @ 0.25 IDSS
bos @ IDSS and 0.25 IDSS
gos @ IDSS
gos @ 0.25 IDSS
gfs @ 0.25 IDSS
MPF102
http://onsemi.com
5
Figure 10. S11s Figure 11. S12s
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
1.0
0.9
0.8
0.7
0.6
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.6
0.5
0.4
0.3
0.3
0.4
0.5
0.6
900 900
800
700
600
500
400
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100
200
300
400
600 700
800
900
500
ID = IDSS, 0.25 IDSS
900
500
800
700
600
500
400
300 200
100
ID = 0.25 IDSS
ID = IDSS 100
200
300
400
900
600
700
800
900
800
600
400
300
200
200
100 ID = 0.25 IDSS
ID = IDSS
900
100 500
700
300
400
500
600
700
800
Fi S Fi S
COMMON SOURCE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MPF102
http://onsemi.com
6
f, FREQUENCY (MHz)
10
gig @ IDSS
f, FREQUENCY (MHz)
0.5
Figure 14. Input Admittance (yig) Figure 15. Reverse Transfer Admittance (yrg)
COMMON GATE CHARACTERISTICS
ADMITTANCE PARAMETERS
(VDG = 15 Vdc, Tchannel = 25°C)
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
Figure 16. Forward Transfer Admittance (yfg) Figure 17. Output Admittance (yog)
gig, INPUT CONDUCTANCE (mmhos)
20
10
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
20 30 50 70 100 200 300 500 700 1000
big, INPUT SUSCEPTANCE (mmhos)
gfg, FORWARD TRANSCONDUCTANCE (mmhos)
bfg, FORWARD SUSCEPTANCE (mmhos)
grg, REVERSE TRANSADMITTANCE (mmhos)
brg, REVERSE SUSCEPTANCE (mmhos)
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
gog, OUTPUT ADMITTANCE (mmhos)
bog, OUTPUT SUSCEPTANCE (mmhos)
0.3
0.01
0.1
0.2
10 20 30 50 70 100 200 300 500 700 1000
10 20 30 50 70 100 200 300 500 700 1000 0.01
0.02
0.03
0.3
10 20 30 50 70 100 200 300 500 700 1000
big @ 0.25 IDSS
big @ IDSS
grg @ 0.25 IDSS
gfg @ IDSS
gfg @ 0.25 IDSS
brg @ 0.25 IDSS
bog @ IDSS, 0.25 IDSS
gog @ IDSS
gog @ 0.25 IDSS
0.2 0.005
0.007
0.02
0.03
0.05
0.07
0.1
0.05
0.07
0.1
0.2
0.5
0.7
1.0
brg @ IDSS
0.25 IDSS
gig @ IDSS, 0.25 IDSS
bfg @ IDSS
MPF102
http://onsemi.com
7
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
0°350°340°330°10°20°30°
180°190°200°210°170°160°150°
320°
310°
300°
290°
280°
270°
260°
250°
240°
230°
220°
40°
50°
60°
70°
80°
90°
100°
110°
120°
130°
140°
Figure 18. S11g Figure 19. S12g
0.7
0.6
0.5
0.4
0.3
0.04
0.5
0.4
0.3
0.2
1.0
0.9
0.8
0.7
0.6
0.03
0.02
0.01
0.0
0.01
0.02
0.03
0.04
0.1
900
900
800
700
600
500
300
200
100
800
700
600
500
400
300
200
100
ID = 0.25 IDSS
ID = IDSS
100 200 300 400
500
600
700
800
900
900
600
700
800
ID = 0.25 IDSS
ID = IDSS
100
900
100
900
ID = 0.25 IDSS
ID = IDSS
1.5
100 400
500
600 700
800 900
ID = IDSS, 0.25 IDSS
COMMON GATE CHARACTERISTICS
S–PARAMETERS
(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)
MPF102
http://onsemi.com
8
PACKAGE DIMENSIONS
CASE 29–11
ISSUE AL
TO–92 (TO–226AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
B
K
G
H
SECTION X–X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 --- 12.70 ---
L0.250 --- 6.35 ---
N0.080 0.105 2.04 2.66
P--- 0.100 --- 2.54
R0.115 --- 2.93 ---
V0.135 --- 3.43 ---
1
YLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
CENTRAL/SOUTH AMERICA:
Spanish Phone: 303–308–7143 (Mon–Fri 8:00am to 5:00pm MST)
Email: ONlit–spanish@hibbertco.com
Toll–Free from Mexico: Dial 01–800–288–2872 for Access –
then Dial 866–297–9322
ASIA/PACIFIC: LDC for ON Semiconductor – Asia Support
Phone: 1–303–675–2121 (Tue–Fri 9:00am to 1:00pm, Hong Kong Time)
Toll Free from Hong Kong & Singapore:
001–800–4422–3781
Email: ONlit–asia@hibbertco.com
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
MPF102/D
NORTH AMERICA Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
Fax Response Line: 303–675–2167 or 800–344–3810 Toll Free USA/Canada
N. American Technical Support: 800–282–9855 Toll Free USA/Canada
EUROPE: LDC for ON Semiconductor – European Support
German Phone: (+1) 303–308–7140 (Mon–Fri 2:30pm to 7:00pm CET)
Email: ONlit–german@hibbertco.com
French Phone: (+1) 303–308–7141 (Mon–Fri 2:00pm to 7:00pm CET)
Email: ONlit–french@hibbertco.com
English Phone: (+1) 303–308–7142 (Mon–Fri 12:00pm to 5:00pm GMT)
Email: ONlit@hibbertco.com
EUROPEAN TOLL–FREE ACCESS*: 00–800–4422–3781
*Available from Germany, France, Italy, UK, Ireland
