EC3A02T - Sanyo Semiconductor

EC3A02T

No.7621-1/4

Electret Condenser Microphone Applications

Features

•Ultrasmall (1006 size) and thin (0.35mm)

leadless package.

•Especially suited for use in electret condenser

microphone for audio equipments and telephones.

•Excellent voltage characteristics.

•Excellent transient characteristics.

•Adoption of FBET process.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Gate-to-Drain Voltage VGDO --20 V

Gate Current IG10 mA

Drain Current ID1mA

Allowable Power Dissipation PD100 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100µA --20 V

Cutoff Voltage VGS(off) VDS=2V, ID=1µA --0.1 --1.0 V

Drain Current IDSS VDS=2V, VGS=0 140* 350* µA

Continued on next page.

*The EC3A02T is classified by IDSS as follows.(unit : µA)

Rank 4 5

IDSS 140 to 240 210 to 350

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

EC3A02T

Package Dimensions

unit : mm

2223

[EC3A02T]

33004 TS IM TA-100656

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

N-Channel Silicon Junction FET

Ordering number : ENN7621

1 : Gate

2 : Drain

3 : Source

SANYO : ECSP1006-3(T)

Top View

Bottom View

Marking

0.15 0.15

0.35

0.65

0.05

0.25

0.05

1.0

0.25

0.05

3232

0.6

0.35

EC3A02T

No.7621-2/4

Continued from preceding page. Ratings

Parameter Symbol Conditions min typ max Unit

Forward T ransfer Admittance yfsVDS=2V, VGS=0, f=1kHz 0.5 mS

Input Capacitance Ciss VDS=2V, VGS=0, f=1MHz 5.0 pF

Reverse Transfer Capacitance Crss VDS=2V, VGS=0, f=1MHz 1.1 pF

[Ta=25°C, VCC=2.0V, RL=2.2kΩ, Cin=5pF, See Specified Test Circuit]

Ratings

Parameter Symbol Conditions min typ max Unit

Voltage Gain GVf=1kHz, VIN=10mV --2.0 dB

Reduced Voltage Characteristic ∆GVV f=1kHz, VIN=10mV, VCC=2→1.5V --0.6 --2.0 dB

Frequency Characteristic ∆Gvf f=1kHz to 110Hz --1.0 dB

Total Harmonic Distortion THD f=1kHz, VIN=30mV 0.7 %

Output Noise Voltage VNO VIN=0, A Curve --102 dB

Type No. Indication (Top view) Electrical Connection (Top view)

Test Circuit

Polarity mark (On the top)

Drain

Source Gate

*Electrodes : On the bottom

Polarity mark

Drain

Source

Gate

VCC=2V

33µF

2.2kΩ

OSC

5pF

VCC=1.5V

~VBA

THD

VTVM

Voltage Gain

Frequency Characteristic

Distortion

Reduced Voltage Characteristic

Output Impedance

012345

400

300

200

100

IT04743

--0.2V

VGS=0

--0.1V

--0.3V

--0.4V

0 0.5 1.0 1.5 2.0

400

300

200

100

IT04744

--0.2V

VGS=0

--0.1V

--0.3V

--0.4V

ID -- VDS

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- µA

ID -- VDS

Drain-to-Source Voltage, VDS -- V

Drain Current, ID -- µA

EC3A02T

No.7621-3/4

0 100 200 300 400 500

--1.4

--1.2

--1.0

--0.8

--0.6

--0.2

--0.4

0∆GVV -- IDSS

Reduced Voltage Characteristic, ∆GVV -- dB

IT04752

VGS(off) -- IDSS

Cutoff Voltage, VGS(off) -- V

IT04747

∆GVV :VCC=2V→1.5V

VIN=10mV

f=1kHz

IDSS : VDS=2V

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0 100 200 300 400 500

VDS=2V

ID=1µA

0.6

0.8

1.0

1.4

1.2

2.0

1.8

1.6

0 100 200 300 400 500

IT04748

VDS=2V

VGS=0

f=1kHz

1.0 1.0 10

23 57

0.1 23 57

Ciss -- VDS

Drain-to-Source Voltage, VDS -- V Drain-to-Source Voltage, VDS -- V

Input Capacitance, Ciss -- pF

IT04749

1.0

Crss -- VDS

Reverse Transfer Capacitance, Crss -- pF

IT04750

GV -- IDSS

Voltage Gain, GV -- dB

IT04751

--4.5

--4.0

--3.5

--2.5

--3.0

--2.0

--1.5

--0.5

--1.0

0 100 200 300 400 500

GV : VCC=2V

VIN=10mV

f=1kHz

RL=2.2kΩ

Cin=5pF

IDSS : VDS=2V

1.0 10

23 57

0.1 23 57

yfs -- IDSS

Drain Current, IDSS -- µA

Forward T ransfer Admittance, yfs -- mS

Drain Current, IDSS -- µA Drain Current, IDSS -- µA

500

400

300

200

100

IT04745

--1.0 --0.8 --0.6 --0.4 --0.2 0

IDSS=350µA

250µA

150µA

VDS=2V

500

400

300

200

100

IT04746

--1.0 --0.8 --0.6 --0.4 --0.2 0

VDS=2V

Ta=75°C

--25°C

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- µA

ID -- VGS

Gate-to-Source Voltage, VGS -- V

Drain Current, ID -- µA

EC3A02T

No.7621-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance,

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be exported without obtaining the export license from the authorities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of March, 2004. Specifications and information herein are subject

to change without notice.

0.2

0.4

0.6

0.8

1.0

1.2

THD -- IDSS

Total Harmonic Distortion, THD -- %

IT04753

0 100 200 300 400 500

100

120

00 20 40 60 80 100 120 140 160

PD -- Ta

ITR02650

Ambient Temperature, Ta -- °C

Allowable Power Dissipation, PD -- mW

Drain Current, IDSS -- µA