© 2003 IXYS All rights reserved
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 1 M1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C50A
IC110 TC= 110°C28A
ICM TC= 25°C, 1 ms 150 A
SSOA VGE = 15 V, TJ = 125°C, RG = 10 ICM = 60 A
(RBSOA) Clamped inductive load @0.8 VCES
PCTC= 25°C 250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
Weight 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC= 250 µA, VCE = VGE 2.5 5.0 V
ICES VCE = VCES TJ = 25°C 28N120B 25 µA
VGE = 0 V 28N120BD1 50 µA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC = 28A, VGE = 15 V 2.9 3.5 V
Note 2 T=125°C 2.8
Features
zInternational standard package
zIGBT and anti-parallel FRED for
resonant power supplies
- Induction heating
- Rice cookers
zMOS Gate turn-on
- drive simplicity
zFast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Advantages
zSaves space (two devices in one
package)
zEasy to mount with 1 screw
(isolated mounting screw hole)
zReduces assembly time and cost
DS99135(12/03)
High Voltage IGBT with Diode
IXGQ 28N120B
IXGQ 28N120BD1
VCES = 1200 V
IC25 =50A
VCE(sat) = 3.5 V
tfi(typ) = 160 ns
D1
TO-3P (IXGQ)
GCE(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 28A; VCE = 10 V, Note 2 20 30 S
Cies 2700 pF
28N120B 170 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 28N120BD1 180 pF
Cres 60 pF
Qg92 nC
Qge IC = 28A, VGE = 15 V, VCE = 0.5 VCES 17 nC
Qgc 37 nC
td(on) 30 ns
tri 20 ns
td(off) 180 280 ns
tf i 160 320 ns
Eoff 2.0 5.0 mJ
td(on) 35 ns
tri 28 ns
Eon 2.5 mJ
td(off) 250 ns
tf i 300 ns
Eoff 8.0 mJ
RthJC 0.5 K/W
RthCK 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IFTC = 90°C10A
VFIF = 10 A, VGE = 0 V 2.95 V
IF = 10 A, VGE = 0 V, TJ = 125°C 2.0 V
IRM IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V 14 A
trr VGE = 0 V; TJ = 125°C 120 ns
trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 40 ns
RthJC 2.5 K/W
Inductive load, TJ = 125°°
°°
°C
IC = 28A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 5
Note 1
Inductive load, TJ = 25°°
°°
°C
IC = 28 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 5
Note 1.
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG.
2. Pulse test, t 300 µs, duty cycle d 2 %
IXGQ 28N120B
IXGQ 28N120BD1
TO-3P (IXTQ) Outline
© 2003 IXYS All rights reserved
IXGQ28N120B
IXGQ 28N120BD1
Fig. 2. Extended Output Characte ristics
@ 25 deg. C
0
30
60
90
120
150
180
210
240
270
02468101214161820
V
C E
- Volts
I
C
- Amperes
V
GE
= 17V
7V
9V
11V
13V
15V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
7
14
21
28
35
42
49
56
0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
9V
Fig. 1. Output Characte ristics
@ 25 Deg. C
0
7
14
21
28
35
42
49
56
0.5 1 1.5 2 2.5 3 3.5 4
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E (s at)
- Normalize
d
I
C
= 28A
I
C
= 14A
V
GE
= 15V
I
C
= 56A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Emitter voltage
2
3
4
5
6
7
6 7 8 9 10 11 12 13 14 15 16 17
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 56A
28A
14A
Fig. 6. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
45678910
V
G E
- Volts
I
C
- Amperes
T
J
= 125ºC
2C
-40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXGQ28N120B
IXGQ 28N120BD1
Fig. 7. Transconductance
0
5
10
15
20
25
30
35
0 102030405060708090100
I
C
- Amperes
g
f s
- Siemens
T
J
= -40ºC
2C
125ºC
Fig. 8. Dependence of Turn-off
Energy Loss on R
G
2
4
6
8
10
12
14
16
18
20
22
0 102030405060708090100
R
G
- Ohms
E
off
- milliJoules
I
C
= 14A
T
J
= 125ºC
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 56A
Fig. 9. Dependence of Turn-Off
Energy Loss on I
C
0
2
4
6
8
10
12
14
16
18
20
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
E
off
- MilliJoules
R
G
= 5
R
G
= 47 - - - -
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
0
2
4
6
8
10
12
14
16
18
20
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
off
- milliJoules
I
C
= 56A
R
G
= 5
R
G
= 47 - - - -
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 14A
Fig. 11. Dependence of Turn-off
Sw itching Time on R
G
200
400
600
800
1000
1200
1400
0 102030405060708090100
R
G
- Ohms
Switching Time - nanoseconds
I
C
= 14A
t
d(off)
t
fi
- - - - - -
T
J
= 125ºC
V
GE
= 15V
V
CE
= 960V
I
C
= 28A I
C
= 56A
Fig. 12. Dependence of Turn-off
Sw itching Time
on I
C
0
100
200
300
400
500
600
700
10 15 20 25 30 35 40 45 50 55 60
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
© 2003 IXYS All rights reserved
IXGQ 28N120B
IXGQ28N120BD1
Fig. 16. Maximum Transient Therm al Resistance
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
(th) J C
-
(ºC/W)
0.50
Fig. 14. Gate Charge
0
3
6
9
12
15
0 102030405060708090100
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 600V
I
C
= 28A
I
G
= 10mA
Fig. 15. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - p F
Cies
Coes
Cres
f = 1 MHz
Fig. 13. Dependence of Turn-off
Sw itching Time on Temperature
50
100
150
200
250
300
350
400
450
500
550
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
I
C
= 14A
t
d(off)
t
fi
- - - - - -
R
G
= 5
V
GE
= 15V
V
CE
= 960V
I
C
= 28A
I
C
= 14A
I
C
= 56A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
IXGQ 28N120B
IXGQ28N120BD1
200 600 10000 400 800
90
100
110
120
130
140
150
0.00001 0.0001 0.001 0.01 0.1 1
0.001
0.01
0.1
1
10
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
Kf
TVJ
°C
-diF/dt
t
s
K/W
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
VFR
diF/dt
V
200 600 10000 400 800
0
10
20
30
40
100 1000
0
500
1000
1500
2000
01234
0
5
10
15
20
25
30
IRM
Qr
IF
A
VF-diF/dt -diF/dt
A/µs
A
V
nC
A/µsA/µs
trr
ns
tfr
ZthJC
A/µs
µs
DSEP 8-12A
IF= 20A
IF= 10A
IF= 5A
TVJ= 100°C
VR = 600V TVJ= 100°C
IF = 10A
Fig. 19 Peak reverse current IRM
versus -diF/dt
Fig. 18 Reverse recovery charge Qr
versus -diF/dt
Fig. 17 Forward current IF versus VF
TVJ= 100°C
VR = 600V
TVJ= 100°C
VR = 600V
IF= 20A
IF= 10A
IF= 5A
Qr
IRM
Fig. 20 Dynamic parameters Qr, IRM
versus TVJ
Fig. 21 Recovery time trr versus -diF/dt Fig. 22 Peak forward voltage VFR and
tfr
versus diF/dt
IF= 20A
IF= 10A
IF= 5A
tfr VFR
Fig. 23 Transient thermal resistance junction to case
Constants for ZthJC calculation:
iR
thi (K/W) ti (s)
1 1.449 0.0052
2 0.558 0.0003
3 0.493 0.017
TVJ= 25°C
TVJ=100°C
TVJ=150°C