IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 28A; VCE = 10 V, Note 2 20 30 S
Cies 2700 pF
28N120B 170 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 28N120BD1 180 pF
Cres 60 pF
Qg92 nC
Qge IC = 28A, VGE = 15 V, VCE = 0.5 VCES 17 nC
Qgc 37 nC
td(on) 30 ns
tri 20 ns
td(off) 180 280 ns
tf i 160 320 ns
Eoff 2.0 5.0 mJ
td(on) 35 ns
tri 28 ns
Eon 2.5 mJ
td(off) 250 ns
tf i 300 ns
Eoff 8.0 mJ
RthJC 0.5 K/W
RthCK 0.25 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
IFTC = 90°C10A
VFIF = 10 A, VGE = 0 V 2.95 V
IF = 10 A, VGE = 0 V, TJ = 125°C 2.0 V
IRM IF = 10 A; -diF/dt = 400 A/µs, VR = 600 V 14 A
trr VGE = 0 V; TJ = 125°C 120 ns
trr IF = 1 A; -diF/dt = 100 A/µs; VR = 30 V, VGE = 0 V 40 ns
RthJC 2.5 K/W
Inductive load, TJ = 125°°
°°
°C
IC = 28A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 5 Ω
Note 1
Inductive load, TJ = 25°°
°°
°C
IC = 28 A; VGE = 15 V
VCE = 0.8 VCES; RG = Roff = 5 Ω
Note 1.
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG.
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXGQ 28N120B
IXGQ 28N120BD1
TO-3P (IXTQ) Outline