High Voltage IGBT with Diode VCES IC25 VCE(sat) IXGQ 28N120B IXGQ 28N120BD1 tfi(typ) = 1200 = 50 = 3.5 = 160 V A V ns D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 M 1200 V VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25C 50 A IC110 TC = 110C 28 A ICM TC = 25C, 1 ms 150 A SSOA (RBSOA) VGE = 15 V, TJ = 125C, RG = 10 Clamped inductive load ICM = 60 @0.8 VCES A PC TC = 25C 250 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C Md Mounting torque 1.13/10 Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s TO-3P (IXGQ) G 6 (TAB) C = Collector TAB = Collector Features z z z z Weight E G = Gate E = Emitter C 300 C g International standard package IGBT and anti-parallel FRED for resonant power supplies - Induction heating - Rice cookers MOS Gate turn-on - drive simplicity Fast Recovery Expitaxial Diode (FRED) - soft recovery with low IRM Advantages Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. = 250 A, VCE = VGE VGE(th) IC ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = 20 V VCE(sat) IC = 28A, VGE = 15 V Note 2 (c) 2003 IXYS All rights reserved TJ = 25C 2.5 5.0 V 28N120B 28N120BD1 25 50 A A 100 nA 3.5 V T=125C 2.9 2.8 z z z Saves space (two devices in one package) Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost DS99135(12/03) IXGQ 28N120B IXGQ 28N120BD1 Symbol Test Conditions gfs IC Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. = 28A; VCE = 10 V, Note 2 30 S 2700 170 pF pF 28N120BD1 180 pF Cres 60 pF Qg 92 nC 17 nC 37 nC 30 ns 20 ns Cies 20 28N120B Coes VCE = 25 V, VGE = 0 V, f = 1 MHz Qge IC = 28A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tf i Eoff td(on) tri Eon td(off) tf i Eoff Inductive load, TJ = 25C IC = 28 A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 5 Note 1. Inductive load, TJ = 125C IC = 28A; VGE = 15 V VCE = 0.8 VCES; RG = Roff = 5 Note 1 RthJC RthCK Reverse Diode (FRED) 180 280 160 2.0 320 n s 5.0 mJ 35 ns 28 ns 2.5 mJ 250 ns 300 8.0 ns mJ 0.25 0.5 K/W K/W ns Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Symbol Test Conditions IF TC = 90C VF IF = 10 A, VGE = 0 V IF = 10 A, VGE = 0 V, TJ = 125C IRM t rr IF = 10 A; -diF/dt = 400 A/s, VR = 600 V VGE = 0 V; TJ = 125C t rr IF = 1 A; -diF/dt = 100 A/s; VR = 30 V, VGE = 0 V 10 A 2.95 2.0 V V 14 120 A ns 40 ns 2.5 K/W RthJC Notes: TO-3P (IXTQ) Outline 1. 2. Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGQ28N120B IXGQ 28N120BD1 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 270 56 VGE = 15V 13V 11V 49 15V 210 35 I C - Amperes 42 I C - Amperes VGE = 17V 240 9V 28 21 7V 14 13V 180 150 11V 120 90 9V 60 7 7V 30 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 0 4 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 56 14 16 18 20 1.3 VGE = 15V I C = 56A 1.2 V C E (sat)- Normalized 42 I C - Amperes 12 Fig. 4. De pende nce of V CE(sat) on Tem perature VGE = 15V 13V 11V 49 10 V C E - Volts V C E - Volts 9V 35 28 7V 21 14 1.1 1.0 I C = 28A 0.9 0.8 I C = 14A 0.7 7 5V 0 0.6 0.5 1 1.5 2 2.5 3 3.5 0 4 25 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 75 100 125 150 9 10 Fig. 6. Input Adm ittance 7 100 TJ = 25C 90 6 80 I C - Amperes VC E - Volts 50 TJ - Degrees Centigrade I C = 56A 28A 14A 5 4 70 60 50 40 TJ = 125C 25C -40C 30 3 20 10 2 0 6 7 8 9 10 11 12 13 V G E - Volts (c) 2003 IXYS All rights reserved 14 15 16 17 4 5 6 7 V G E - Volts 8 IXGQ28N120B IXGQ 28N120BD1 Fig. 8. Dependence of Turn-off Ene rgy Loss on RG Fig. 7. Trans conductance 35 22 30 I C = 56A 18 20 15 TJ = 125C VGE = 15V VCE = 960V 16 E off - milliJoules 25 g f s - Siemens 20 TJ = -40C 25C 125C 14 12 I C = 28A 10 8 10 6 5 I C = 14A 4 0 2 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 I C - Amperes Fig. 9. Dependence of Turn-Off Ene rgy Loss on IC 20 14 16 12 10 TJ = 125C 8 14 80 90 100 I C = 56A 10 I C = 28A 8 6 4 4 2 TJ = 25C 0 I C = 14A 0 10 15 20 25 30 35 40 45 50 55 60 25 35 I C - Amperes 45 55 65 75 TJ = 125C VGE = 15V VCE = 960V 800 600 I C = 56A I C = 28A I C = 14A 400 Switching Time - nanoseconds 700 1000 95 105 115 125 Fig. 12. Depe ndence of Turn-off Sw itching Tim e on IC td(off) tfi - - - - - - 1200 85 TJ - Degrees Centigrade Fig. 11. Dependence of Turn-off Sw itching Tim e on RG 1400 Switching Time - nanoseconds 70 12 6 2 60 R G = 5 R G = 47 - - - VGE = 15V VCE = 960V 18 E off - milliJoules E off - MilliJoules 16 50 Fig. 10. De pende nce of Turn-off Ene rgy Loss on Tem pe rature 20 R G = 5 R G = 47 - - - VGE = 15V VCE = 960V 18 40 R G - Ohms td(off) tfi - - - - - - 600 R G = 5 VGE = 15V VCE = 960V 500 TJ = 125C 400 300 200 TJ = 25C 100 200 0 0 10 20 30 40 50 60 R G - Ohms 70 80 90 10 100 15 20 25 30 35 40 45 50 55 60 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344 IXGQ 28N120B IXGQ28N120BD1 Fig. 13. De pende nce of Turn-off Sw itching Tim e on Te m perature 550 Switching Time - nanoseconds 15 td(off) tfi - - - - - - 500 450 Fig. 14. Gate Charge 12 R G = 5 VGE = 15V VCE = 960V 400 VCE = 600V IC = 28A IG = 10mA I C = 14A 300 VG E - Volts 350 I C = 56A 250 9 6 I C = 28A 200 I C = 14A 150 3 100 50 0 25 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 15. Capacitance 10000 f = 1 MHz Capacitance - p F C ies 1000 C oes 100 C res 10 0 5 10 15 20 25 V C E - Volts 30 35 40 Fig. 16. Maxim um Trans ient Therm al Res istance R (th) J C - (C/W) 1.00 0.50 0.10 1 (c) 2003 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000 IXGQ 28N120B IXGQ28N120BD1 30 2000 A IF 25 nC 20 1500 Qr TVJ= 100C A VR = 600V IRM IF= 20A IF= 10A IF= 5A TVJ=150C 15 40 TVJ= 100C VR = 600V 1000 30 IF= 20A IF= 10A IF= 5A 20 TVJ=100C 10 500 TVJ= 25C 10 5 0 0 1 2 3 VF 0 100 4V Fig. 17 Forward current IF versus VF 0 A/s 1000 -diF/dt Fig. 18 Reverse recovery charge Qr versus -diF/dt 150 2.0 140 Kf VFR 130 1.0 0.0 Qr 0 40 TVJ= 100C IF = 10A V tfr 1.2 s tfr VFR 0.8 IF= 20A IF= 10A IF= 5A 110 0.5 600 A/s 800 1000 -diF/dt 80 120 IRM 400 120 trr 1.5 200 Fig. 19 Peak reverse current IRM versus -diF/dt TVJ= 100C VR = 600V ns 0 40 0.4 100 80 90 120 C 160 0 200 400 600 TVJ 0 800 1000 A/s 0 200 400 -diF/dt Fig. 20 Dynamic parameters Qr, IRM versus TVJ Fig. 21 Recovery time trr versus -diF/dt 10 K/W 0.0 600 A/s 800 1000 diF/dt Fig. 22 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 1 2 3 ZthJC Rthi (K/W) ti (s) 1.449 0.558 0.493 0.0052 0.0003 0.017 0.1 0.01 0.001 0.00001 DSEP 8-12A 0.0001 0.001 0.01 0.1 s t 1 Fig. 23 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 6,306,728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 6,306,728B1 6,683,344