AlGaAs Beamlead PIN Diode
Rev. V5
MA4AGBL912
1
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Features
Low Series Resistance
Low Capacitance
5 Nanosecond Switching Speed
Can be Driven by a Buffered +5V TTL
Silicon Nitride Passivation
Polyimide Scratch Protection
RoHS Compliant
Description
M/A-COM Technology Solutions MA4AGBLP912 is
an Aluminum-Gallium-Arsenide anode enhanced,
beam lead PIN diode. AlGaAs anodes, which utilize
M/A-COM Tech’s patented hetero-junction
technology, produce less diode “On” resistance than
conventional GaAs or silicon devices. This device is
fabricated in a OMCVD system using a process
optimized for high device uniformity and extremely
low parasitics. The result is a diode with low series
resistance, 4Ω, low capacitance, 28fF, and an
extremely fast switching speed of 5nS. It is fully
passivated with silicon nitride and has an additional
polymer coating for scratch protection. The
protective coating prevents damage to the junction
and the anode air bridges during handling and as-
sembly.
Applications
The ultra low capacitance of the MA4AGBLP912
device makes it ideally suited for use up to 40GHz
when used in a shunt configuration. The low RC
product and low profile of the beamlead PIN diode
allows for use in microwave switch designs, where
low insertion loss and high isolation are required.
The operating bias conditions of +10mA for the low
loss state, and 0V, for the isolation state permits the
use of a simple +5V TTL gate driver. AlGaAs,
beamlead diodes, can be used in switching arrays
on radar systems, high speed ECM circuits, optical
switching networks, instrumentation, and other
wideband multi-throw switch assemblies.
Absolute Maximum Ratings @ TAMB = 25°C
(unless otherwise specified)
Parameter Absolute Maximum
Reverse Voltage -50V
Operating Temperature -65°C to +125°C
Storage Temperature -65°C to +150°C
Junction Temperature +175°C
Forward DC Current 40mA
C.W. Incident Power +23dBm
Mounting Temperature +235°C for 10 seconds
Topside
Bottom
AlGaAs Beamlead PIN Diode
Rev. V5
MA4AGBL912
2
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M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Electrical Specifications at TAMB = 25°C
DIM
INCHES MM
MIN. MAX. MIN. MAX.
A 0.009 0.013 0.2286 0.3302
B 0.0049 0.0089 0.1245 0.2261
C 0.0037 0.0057 0.0940 0.1448
D 0.0049 0.0089 0.1245 0.2261
E 0.002 0.006 0.0508 0.1524
F 0.0218 0.0278 0.5537 0.70612
Test Conditions Parameters Units Min Typical Max.
Total Capacitance @ –5V/1 MHz Ct fF – 26 30
Forward Resistance @ +20mA/1 GHz Rs Ohms – 4 4.9
Forward Voltage at +10mA Vf Volts 1.2 1.36 1.5
Leakage Current at –40 V Ir nA – 50 300
Minority Carrier Lifetime TL nS – 5 10
AlGaAs Beamlead PIN Diode
Rev. V5
MA4AGBL912
3
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
3
MA4AGBLP912 SPICE Model
Ffe= 1.0
Af=1.0
Imax= 0.04 A
Fc= 0.5
M= 0.5
Vj= 1.35 V
Cj0= 0.022 pF
Tau= 10 nsec
Cjmin= 0.020 pF
Rr= 10 K Ohms
Wi= 3.0 um
e-= 8600 cm^2/V-sec
Vi=0.0 V
Is=1.0E-14 A
wPmax= 100 mW
wBv= 50 V
Kf= 0.0
Rs
Ct
Ls = 0.5
Diode Model
AlGaAs Beamlead PIN Diode
Rev. V5
MA4AGBL912
4
4
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
4
Handling and Assembly Procedures
The following precautions should be observed to avoid damaging these devices.
Cleanliness
These devices should be handled in a clean environment.
Static Sensitivity
Aluminum Gallium Arsenide PIN diodes are Class 0, HBM, ESD sensitive and can be damaged by
static electricity. Proper ESD techniques should be used when handling these devices.
General Handling
These devices have a polymer layer which provides scratch protection for the junction area and the
anode air bridge. Beam lead devices must, however, be handled with extreme care since the leads
may easily be distorted or broken by the normal pressures exerted when handled with tweezers. A
vacuum pencil with a #27 tip is recommended for picking and placing.
Attachment
These devices were designed to be inserted onto hard or soft substrates. Recommended methods
of attachment include thermo-compression bonding, parallel-gap welding and electrically conductive
silver epoxy.
Ordering Information
Part Number Packaging
MA4AGBLP912 Gel Pak
AlGaAs Beamlead PIN Diode
Rev. V5
MA4AGBL912
5
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5
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