1CGD15FB45P1 Rev - , 10/2015
Six Channel SiC MOSFET Driver
Gate Driver for 1200V SiC MOSFET Power Module
Features
6 output channels
Isolated power supply
Direct mount low inductance design
Short circuit protection
Over temperature protection
Under voltage protection
For use with Cree Module
45mm, six-pack CCS020M12CM2
45mm, six-pack CCS050M12CM2
Applications
Driver for SiC MOSFET modules in two-level,
three-phase inverter applications
DC Bus voltage up to 1000VDC
Absolute Maximum Ratings
Symbol Parameter Value Unit Test Conditions
Vs Power Supply Voltage 16 V Vs ramp rate >50V/sec
ViH Input signal voltage HIGH 5 V
ViL Input signal voltage LOW 0 V
IO.pk Output peak current ±9 (±2) A Rg limited
PO_AVG Ouput power per gate 1.2 W
FMax Max. Switching frequency 250 kHz Vg=+20/-5, Rg=10Ω
VDS Max. Drain to source voltage 1200 V
Visol Input to output isolation
±1200 V
dv/dt
Rate of change of output to
input voltage
50,000 V/μs
W Weight 223 g
MTBF Mean time between failure 1.5 106h
Top Operating temperature -35 to 85 ºC
Tstg Storage temperature -40 to 85 ºC
Part Number Package Marking
CGD15FB45P1 PCBA CGD15FB45P1