IMAGE SENSOR CCD area image sensor S7960/S7961-1008 Back-thinned FFT-CCD for high-speed application S7960/S7961-1008 are FFT-CCD area image sensors specifically designed for high speed operation. A high frame rate is attained by employing a wide band width on-chip amplifier. In binning operation, S7960/S7961-1008 can be used as a linear image sensor having a long aperture in the direction of the device length. The binning operation offers significant improvement in signal-to-noise ratio and signal processing speed compared to conventional methods by which signals are digitally added by an external circuit. In area scan operation, S7960/S7961-1008 can be used as a high frame rate camera. S7960/S7961-1008 also feature low dark signal (MPP mode operation). S7960/S7961-1008 have an effective pixel size of 24 x 24 m and is available in image areas of 24.576 (H) x 6.000 (V) mm. One-stage peltier cooler is built into the package for thermoelectric cooling (S7961-1008). At room temperature operation, the device can be cooled down to -10 C (Typ.) without using any other cooling technique. In addition, since both the CCD chip and the peltier cooler are hermetically sealed, no dry air is required, thus allowing easy handling. Features Applications High-speed on-chip amplifier Greater than 90 % quantum efficiency Wide spectral response range Built-in TE-cooler MPP operation Non-cooled type: S7960-1008 One-stage TE-cooled type: S7961-1008 (Two-stage TE-cooled type is optional) High-speed spectrometer High-speed UV imaging Optical and spectrophotometric analyzer Selection and order guide Type No. Cooling Number of total pixels S7960-1008 Non-cooled 1044 x 256 S7961-1008 One-stage TE-cooled A window material can be selected upon need, and the following is available. AR-coated sapphire (standard): expressed by S # Quart: expressed by Q # Temporary window: expressed by N # # This should be added at the end of a type No. when ordered. ex. S7960-1008S: AR-coated sapphire General ratings Parameter CCD structure Fill factor Number of active pixels Pixel size Active area Vertical clock phase Horizontal clock phase Output circuit Package Window Number of active pixels Active area [mm (H) x mm (V)] 1024 x 250 24.576 x 6.000 Specification Full frame transfer 100 % 1024 (H) x 250 (V) 24 (H) x 24 (V) m 24.576 (H) x 6.000 (V) mm 2 phase 2 phase Two-stage MOSFET source follower 24 pin ceramic package AR coated sapphire Quartz, temporary window are available upon request 1 CCD area image sensor S7960/S7961-1008 Absolute maximum ratings (Ta=25 C) Parameter Operating temperature Storage temperature OD voltage RD voltage ISV voltage ISH voltage IGV voltage IGH voltage SG voltage OG voltage RG voltage TG voltage Vertical clock voltage Horizontal clock voltage Operating conditions (MPP mode, Ta=25 C) Parameter Output transistor drain voltage Reset drain voltage Output gate voltage Substrate voltage Test point (vertical input source) Test point (horizontal input source) Test point (vertical input gate) Test point (horizontal input gate) Vertical shift register clock voltage Horizontal shift register clock voltage Summing gate voltage Reset gate voltage Transfer gate voltage High Low High Low High Low High Low High Low Electrical characteristics (Ta=25 C) Parameter Signal output frequency Reset clock frequency Vertical shift register capacitance Horizontal shift register capacitance Summing gate capacitance Reset gate capacitance Transfer gate capacitance Transfer efficiency DC output level Output impedance Symbol Topr Tstg VOD VRD VISV VISH VIG1V, VIG2V VIG1H, VIG2H VSG VOG VRG VTG VP1V, VP2V VP1H, VP2H Min. -50 -50 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -10 -10 -10 Typ. - Max. +30 +70 +25 +18 +18 +18 +15 +15 +15 +15 +15 +15 +15 +15 Unit C C V V V V V V V V V V V V Symbol VOD VRD VOG VSS VISV VISH VIG1V, VIG2V VIG1H, VIG2H VP1VH, VP2VH VP1VL, VP2VL VP1HH, VP2HH VP1HL, VP2HL VSGH VSGL VRGH VRGL VTGH VTGL Min. 12 11.5 1 -8 -8 4 -9 4 -9 4 -9 4 -9 4 -9 Typ. 15 12 3 0 VRD VRD 0 0 6 -8 6 -8 6 -8 6 -8 6 -8 Max. 18 12.5 5 8 -7 8 -7 8 -7 8 -7 8 -7 Unit V V V V V V V V V V V V Symbol fc frg CP1V, CP2V CP1H, CP2H CSG CRG CTG CTE Remark *1 Min. 0.99995 Typ. 1 1 6,400 300 7 7 150 0.99999 Max. 10 10 - Unit MHz MHz pF pF pF pF pF - Vout *2 7 10 13 V *2 - 500 - - 100 - W mW Zo *2, *3 Power dissipation P *1: Charge transfer efficiency per pixel, measured at half of the full well capacity. *2: VOD=15 V, Load resistance=2.2 kW *3: Power dissipation of the on-chip amplifier. 2 V CCD area image sensor Electrical and optical characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol Remark Min. Saturation output voltage Vsat Vertical 150 Full well *4 Fw capacity Horizontal 150 *5 CCD node sensitivity Sv 1.8 25 C Dark current 6 * DS (MPP mode) 0 C *7 Readout noise Nr Line binning 1,250 8 * Dynamic range DR Area scanning 1,250 Spectral response range l 9 * Photo response non-uniformity PRNU *4: Large horizontal full well for line binning operation. *5: VOD=15 V , Load resistance=2.2 kW *6: Dark current nearly doubles for every 5 to7 C increase in temperature. *7: -40 C, operating frequency is 1 MHz. *8: DR = Fw / Nr *9: Measured at half of the full well capacity. PRNU (%) = noise / signal x 100 Noise: fixed pattern noise (peak to peak) S7960/S7961-1008 Typ. Fw x Sv 300 300 2.2 4,000 200 60 5,000 5,000 200 to 1,100 - Max. 12,000 600 120 10 Unit V keV/ee-/pixel/s e-rms nm % Pin connections Pin S7960 series S7961 series No. Symbol Description Symbol Description 1 RD Reset drain RD Reset drain 2 OS Output transistor source OS Output transistor source 3 OD OD Output transistor drain Output transistor drain 4 OG OG Output gate Output gate 5 SG Summing gate SG Summing gate 6 NC NC 7 NC NC 8 P2H P2H CCD horizontal register clock-2 CCD horizontal register clock-2 9 P1H P1H CCD horizontal register clock-1 CCD horizontal register clock-1 10 IG2H Test point (horizontal input gate-2) IG2H Test point (horizontal input gate-2) 11 IG1H Test point (horizontal input gate-1) IG1H Test point (horizontal input gate-1) 12 ISH ISH Test point (horizontal input source) Test point (horizontal input source) 13 TG TG Transfer gate Transfer gate 14 P2V P2V CCD vertical register clock-2 CCD vertical register clock-2 15 P1V P1V CCD vertical register clock-1 CCD vertical register clock-1 16 NC Th1 Thermistor 17 NC Th2 Thermistor 18 NC PTE-cooler19 NC P+ TE-cooler+ 20 SS Substrate (GND) SS Substrate (GND) 21 ISV ISV Test point (vertical input source) Test point (vertical input source) 22 IG2V Test point (vertical input gate-2) IG2V Test point (vertical input gate-2) 23 IG1V Test point (vertical input gate-1) IG1V Test point (vertical input gate-1) 24 RG Reset gate RG Reset gate *10: TG is an isolation gate between vertical register and horizontal resister. In standard operation, the same pulse of P2V should be applied to the TG. Remark Same timing as P2H Shorted to 0 V Shorted to 0 V Shorted to RD Same timing as P2V *10 Shorted to RD Shorted to 0 V Shorted to 0 V 3 S7960/S7961-1008 CCD area image sensor Spectral response without window Spectral transmittance characteristic of window material (Typ. Ta=25 C) 100 90 BACK-THINNED 80 80 TRANSMITTANCE (%) QUANTUM EFFICIENCY (%) 90 70 60 50 40 30 20 (Typ. Ta=25 C) 100 FRONT-SIDED (UV COAT) 50 40 30 10 10 400 AR COATED SAPPHIRE 60 20 FRONT-SIDED 0 200 QUARTZ WINDOW 70 600 800 1000 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1200 WAVELENGTH (nm) WAVELENGTH (nm) KMPDB0058EA KMPDB0110EA Dimensional outlines (unit: mm) S7960-1008 S7961-1008 WINDOW 28.6 WINDOW 28.6 ACTIVE AREA 24.576 ACTIVE AREA 24.576 22.4 22.9 6.9 19.0 4.0 8.2 6.000 22.9 22.4 8.2 6.000 6.3 24 23 24 23 1 2 1 2 INDEX MARK INDEX MARK 2.54 2.54 44.0 44.0 52.0 60.0 PHOTOSENSITIVE SURFACE 4.8 (24 x) 0.5 KMPDA0105EA 4 1.0 3.0 TE-COOLER 7.7 4.8 1st PIN INDEX MARK 2.4 3.0 (24 x) 0.5 4.0 PHOTOSENSITIVE SURFACE 3.4 1st PIN INDEX MARK KMPDA0106EA CCD area image sensor S7960/S7961-1008 Device structure, line output format 22 21 15 20 14 13 2 BEVEL 23 250 SIGNAL OUT THINNING ... ... ... THINNING 5 4 3 2 12345 24 4 BEVEL ... V ... H ... 1 12 3 11 V=250 H=1024 2 4 8 5 9 1024 SIGNAL OUT 4 BLANK 6 BEVEL 10 4 BLANK 6 BEVEL Pixel format KMPDC0096EA Blank 4 Left Horizontal direction (R) Right Effective 1024 Bevel 6 Top Vertical direction (R) Bottom Effective 250 Bevel 2 Bevel 6 Blank 4 Bevel 4 Timing chart Area scanning 1 (low dark current mode) INTEGRATION PERIOD (Shutter must be opened) 1 HORIZONTAL-SCANNING READOUT PERIOD READOUT PERIOD (Shutter must be closed) Tpwv P1V P2V TG 1 2 3 P1H P2H, SG RG Vos Tovr P2V TG EXPANDED VIEW Tpwh, Tpws P1H P2H, SG RG Tpwr Vos D1 D2 DARK SIGNAL PHOTO GENERATED SIGNAL KMPDC0097EA 5 S7960/S7961-1008 CCD area image sensor Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *11: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. Remark * * - Min. 11 20 50 10 50 10 15 5 3 Typ. 50 50 - Max. - Unit s ns ns ns % ns ns % ns ns s Area scanning 2 (large full well mode) Timing Chart: Area Scanning 2 (S7960/S7961 Serie ) INTEGRATION PERIOD (Shutter must be opened) 1 HORIZONTAL-SCANNING READOUT PERIOD READOUT PERIOD (Shutter must be closed) Tpwv P1V P2V TG 1 2 3 P1H P2H, SG RG Vos Tovr P2V TG EXPANDED VIEW Tpwh, Tpws P1H P2H, SG RG Tpwr Vos D1 D2 DARK SIGNAL PHOTO GENERATED SIGNAL KMPDC0104EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *12: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. 6 Remark * * - Min. 11 20 50 10 50 10 15 5 3 Typ. 50 50 - Max. - Unit s ns ns ns % ns ns % ns ns s S7960/S7961-1008 CCD area image sensor Line binning Tpwv P1V P2V TG READOUT PERIOD LINE BINNING PERIOD Tpwh, Tpws P1H P2H, SG Tpwr RG Vos D1 D2 KMPDC0017EA Parameter Symbol Pulse width Tpwv P1V, P2V, TG Rise and fall time Tprv, Tpfv Pulse width Tpwh P1H, P2H Rise and fall time Tprh, Tpfh Duty ratio Pulse width Tpws SG Rise and fall time Tprs, Tpfs Duty ratio Pulse width Tpwr RG Rise and fall time Tprr, Tpfr TG P1H Overlap time Tovr *13: Symmetrical pulses should be overlapped at 50 % of maximum amplitude. Remark *! *! - Min. 11 20 50 10 50 10 15 5 3 Typ. 50 50 - Max. - Unit s ns ns ns % ns ns % ns ns s Specifications of built-in TE-cooler (S7961-1008) Parameter Internal resistance Symbol Rint Maximum current *" Imax Maximum voltage Vmax Maximum heat absorption *% Qmax Condition Ta=27 C Th *#=27 C DT *$= DTmax Th *#=27 C DT = DTmax I = Imax Tc *&=Th *#=27 C I=Imax Min. - Typ. 1.2 Max. - Unit W - - 3.0 A - - 3.6 V - - 5.0 W Maximum temperature at hot side 70 C CCD temperature Ta=25 C -10 0 C *14: If the current is greater than Imax, the heat absorption begins to decrease due to the Joule heat. It should be noted that this value is not a damage threshold. To protect the thermoelectric cooler and maintain stable operation, the supply current should be less than 60 % of this maximum current. *15: Temperature at hot side of thermoelectric cooler. *16: DT = Th - Tc *17:This is a theoretical heat absorption level that offsets the temperature difference in the TE-cooler element when the maximum current is supplied to the unit. *18: Temperature at cool side of thermoelectric cooler. 7 CCD area image sensor (Typ. Ta=25 C) VOLTAGE vs. CURRENT CCD TEMPERATURE vs. CURRENT VOLTAGE (V) 6 30 20 5 10 4 0 3 -10 2 -20 1 -30 0 0 1 2 3 4 CCD TEMPERATURE (C) 7 S7960/S7961-1008 -40 CURRENT (A) KMPDB0179EA Specifications of built-in temperature sensor (S7961-1008) A chip thermistor is built in the same package with a CCD chip, and the CCD chip temperature can be monitored with it. A relation between the thermistor resistance and absolute temperature is expressed by the following equation. R1 = R2 x expB (1 / T1 - 1 / T2) where R1 is the resistance at absolute temperature T1 (K) R2 is the resistance at absolute temperature T2 (K) B is so-called the B constant (K) RESISTANCE The characteristics of the thermistor used are as follows. R (298K) = 10 kW B (298K / 323K) = 3450 K (Typ. Ta=25 C) 1 M 100 k 10 k 220 240 260 280 300 TEMPERATURE (K) KMPDB0111EA Precaution for use (Electrostatic countermeasures) Handle these sensors with bare hands or wearing cotton gloves. In addition, wear anti-static clothing or use a wrist band with an earth ring, in order to prevent electrostatic damage due to electrical charges from friction. Avoid directly placing these sensors on a work-desk or work-bench that may carry an electrostatic charge. Provide ground lines or ground connection with the work-floor, work-desk and work-bench to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Heating/cooling rate The heating/cooling rate should be set at less than 5 K/min. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1034E07 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Feb. 2003 DN 8