KST-2003-000 1
BC817
NPN Silicon Transistor
Descriptions
• High current application
• Switching application
Features
• Suitable for AF-Driv er stage and low power output stages
• Complementary pair with BC807
Ordering Information
Type NO. Marking Package Code
BC817 NA SOT-23
: hFE rank
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne cti ons
1. Bas e
2. Emitter
3. Collector
2.4±0.1
1.30±0.1
0.45~0.60
0.4 Typ.
2.9±0.1
1.12 Max.
0.38
0~0.1
0.124 -0.03
+0.05
3
1
2
1.90 Typ.
0.2 Min.
KST-2003-000 2
BC817
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 50 V
Collector-Emitter voltage VCEO 35 V
Emitter-Base voltage VEBO 5V
Collector current IC800 mA
Collector dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=1mA, IE=0 35 - - V
Base-Emitter tu r n on voltage VBE(ON) VCE=1V, IC=300mA - - 1.2 V
Collec tor -Emitter s a turation voltage VCE(sat) IC=500mA, IB=50mA - - 700 mV
Collector cut-off current ICBO VCB=25V, IE=0 - - 100 nA
DC current gain hFE*VCE=1V, IC=100mA 100 - 630 -
Transition frequency fTVCB=5V, IC=10mA - 100 - MHz
Collec tor output capac itance Cob VCB=10V, IE=0, f=1MHz - 16 - pF
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
KST-2003-000 3
2SC5344SF
BC817
Electrical Characteristic Curves
Fig. 2 IC - VBE
Fig. 3 IC - VCE Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
Fig. 1 PC - Ta
