Tyco/Electronics
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PolySwitch®
SiBar
Thyristor Surge Protector s
PRODUCT: TVB270SA
DOCUMENT: 24305
PCN: 574139
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 1 OF 2
Specification Status: RELEASED
PHYSICAL DESCRIPTION
A
B
C D* H J K P S
MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX REF MIN MAX
mm:
in: 4.06
.160 4.57
.180 3.30
.130 3.81
.150 1.90
.075 2.41
.095 1.96
.077 2.11
.083 .051
.002 .152
.006 0.15
.006 0.30
.012 0.76
.030 1.27
.050 0.51
.020 5.21
.205 5.59
.220
* D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P
Other Physical Characteristics
Form Factor: SMB (Surface Mount DO-214 Package)
Lead Material: Tin/lead finish
Encapsulation Material: Epoxy, meets UL94 V-0 requirements
Solderability: per MIL-STD-750, Method 2026
Solder Heat Withstand: per MIL-STD-750, Method 2031
Solvent Resistance: per MIL-STD-750, Method 1022
Mechanical Shock: per MIL-STD-750, Method 2016
Tape and Reel packaging per EIA 481-1
Tyco/Electronics
Raychem Corporation
308 Constitution Drive
Menlo Park, CA 94025
800-227-4856
FAX 800-227-4866
PolySwitch®
SiBar
Thyristor Surge Pr otectors
PRODUCT: TVB270SA
DOCUMENT: 24305
PCN: 574139
REV LETTER: B
REV DATE: AUGUST 16, 2001
PAGE NO.: 2 OF 2
DEVICE RATINGS @ 25º C (Both Polarities)
Parameter Symbol Value Units
Off-State Voltage, Maximum at ID = 5 µA VDM 270 V
Non-Repetitive Peak Impulse Current 10x1000 µsec
Double exponential waveform (Notes 1 and 2) 10/560 µsec
10/160 µsec
IPP1
IPP2
IPP3
50
70
100
A
A
A
Critical Rate of Rise of On-State Current
Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak
di/dt
150
A/µs
DEVICE THERMAL RATINGS
Storage Temperature Range TSTG -65 to 150 ºC
Operating Temperature Range
Blocking or conducting state TA -40 to 125 ºC
Overload Junction Temperature
Maximum; Conducting state only TJ +175 ºC
ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted)
Characteristics Symbol Min Typ Max Units
Breakover Voltage (+25ºC)
dV/dt = 100V/µsec, Isc=1.0A, VDC = 1000V VBO
----
310
370
V
Breakover Voltage (+25ºC)
f=60Hz, ISC=1.0Arms, VOC = 1000Vrms,
R=1.0 kΩ, t = 0.5 cycle (Note 2)
VBO
----
310
370
V
Breakover Voltage Temperature Coefficient dVBO/dTJ ---- 0.08 ----- %/ºC
Off-State Current (VD1= 50V)
(VD2= VDM) ID1
ID2 ----
---- -----
----- 2.0
5.0 µA
µA
On-State Voltage (IT=1A)
PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2) VT ---- ----- 5.0 V
Breakover Current IBO ---- 230 ----- mA
Holding Current (Note 2) IH 175 350 ---- mA
Critical Rate of Rise of Off-State Voltage
(Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC) dv/dt 2000 ---- ---- V/µs
Capacitance (f=1.0 Mhz, 50VDC bias, 1 Vrms)
(f=1.0 Mhz, 2VDC bias, 15mVrms) C1
C2 ----
---- 20
50 ----
pF
pF
Note 1. Al l ow cool i ng bef ore test second polarity
Note 2. Measured under pulse condit i ons to reduce heating
VOLTAGE-CURRENT CHARACTERISTIC
