Thyristors Surface Mount - 100V - 600V > MCR72-3, MCR72-6, MCR72-8 MCR72-3, MCR72-6, MCR72-8 Pb Description Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Features * Center Gate Geometry for Uniform Current Density * All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability * Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability * Low Trigger Currents, 200 A Maximum for Direct Driving from Integrated Circuits * These are Pb-Free Devices Pin Out Functional Diagram G A K CASE 221A STYLE 4 1 2 Additional Information Datasheet Resources Samples (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 100V - 600V > MCR72-3, MCR72-6, MCR72-8 Maximum Ratings (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off-State Voltage (Note 1) (- 40 to 110C, Sine Wave, 50 to 60 Hz, Gate Open) VDRM, V VRRM 100 400 600 ITM (RMS) 8.0 A ITSM 100 A IT(AV) 8.0 A I 2t 40 As Forward Peak Gate Voltage (Pulse Width 10 sec, TC= 83C) VGM 5.0 V Forward Peak Gate Current (Pulse Width 10 sec, TC= 83C) IGM 2.0 A Forward Peak Gate Power (Pulse Width 10 sec, TC= 83C) IGM 20 W PG(AV) 0.75 W Operating Junction Temperature Range TJ -40 to +110 C Storage Temperature Range Tstg -40 to +150 C - 8.0 in. lb. MCR72-3 MCR72-6 MCR72-8 On-State RMS Current (180 Conduction Angles; TC = 83C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 110C Average On-State Current (180 Conduction Angles; TC = 83C) Circuit Fusing Consideration (t = 8.3 ms) Average Gate Power (t = 8.3 ms, TC = 83C) Mounting Torque Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol Value Thermal Resistance, Junction-to-Case R8JC 2.2 Thermal Resistance, Junction-to-Ambient R8JA 60 TL 260 Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds Unit C/W C (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 100V - 600V > MCR72-3, MCR72-6, MCR72-8 Electrical Characteristics - OFF (TJ = 25C unless otherwise noted) Characteristic Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, RGK = 1 k) Symbol Min Typ Max TJ = 25C IDRM, - - 10 TJ = 110C IRRM - - 500 ICCH 4 4 A High Logic Level Supply Current from VCC Unit A Electrical Characteristics - ON (TJ = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (ITM = 16 A Peak, Pulse Width 1 ms, Duty Cycle 2%) VTM _ _ 2.0 V Gate Trigger Current (Continuous dc) (Note 3) (VD = 12 V; RL = 100 ) IGT _ 30 200 A Gate Trigger Voltage (Continuous dc) (Note 3) (VD = 12 V; RL = 100 ) VGT _ 0.5 1.5 V Gate Trigger Non-Trigger Voltage (VD = 12 Vdc, RL = 100 , TJ = 110C) VGD 0.1 _ _ V Holding Current (VD = 12 V, Initiating Current = 200 mA, RGK = 1k) IH _ _ 6.0 mA Gate Controlled Turn-On Time (Note 5) (VD = Rated VDRM, ITM = 16 A, IG = 2 mA) tgt _ 1.0 _ s Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, RGK = 1 k, Exponential Waveform, Gate Open, TJ = 110C) dv/dt _ 10 - V/s Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Ratings apply for negative gate voltage or RGK = 1 . Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 3. RGK current not included in measurement. (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 Thyristors Surface Mount - 100V - 600V > MCR72-3, MCR72-6, MCR72-8 Voltage Current Characteristic of SCR Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current Anode + VTM VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH +C urrent Holding Current Figure 1. Average Current Derating on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode IH +V oltage IDRM at VDRM Forward Blocking Region (off state) Figure 2. On-State Power Dissipation 16 dc 12 180 = Conduction Angle 8.0 90 = 30 60 AV 4.0 0 0 2.0 4.0 6.0 IT(AV) Figure 3. Normalized Gate Current Figure 4. Gate Voltage (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17 8.0 Thyristors Surface Mount - 100V - 600V > MCR72-3, MCR72-6, MCR72-8 Part Marking System Dimensions ISSUE O ISSUE AH SEATING PLANE 4 1 12 Dim A 3 Inches Millimeters Min Max Min Max 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A= Y= WW 2 3 AY WW AY WW AKA AKA A= Y= WW Assembly Location Year =W ork Week G AKA= x = 3, 6, 8, or 8T AKA= Assembly Location Year = Work Week Device Code Diode Polarity Diode Polarity Pin Assignment 1 Cathode 2 Anode 3 Gate 4 Anode Ordering Information Device Package Shipping MCR72-3G 500 Units / Box MCR72-6G MCR72-6TG TO-220AB (Pb-Free) 50 Units / Box MCR72-8G 500 Units / Box MCR72-8TG 50 Units / Box 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: www.littelfuse.com/disclaimer-electronics (c) 2017 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 08/30/17