VS-ST223C..C Series
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Inverter Grade Thyristors
(Hockey PUK Version), 390 A
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case A-PUK (TO-200AB)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
Package A-PUK (TO-200AB)
Circuit configuration Single SCR
IT(AV) 390 A
VDRM/VRRM 400 V, 800 V
VTM 1.58 V
ITSM at 50 Hz 5260 A
ITSM at 60 Hz 5510 A
IGT 200 mA
TC/Ths 55 °C
A-PUK (TO-200AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
390 A
Ths 55 °C
IT(RMS)
745 A
Ths 25 °C
ITSM
50 Hz 5850 A
60 Hz 6130
I2t50 Hz 171 kA2s
60 Hz 156
VDRM/VRRM 400 to 800 V
tq Range 10 to 30 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VDRM/VRRM, MAXIMUM
REPETITIVE PEAK VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST223C..C 04 400 500 40
08 800 900
VS-ST223C..C Series
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CURRENT CARRYING CAPABILITY
FREQUENCY UNITS
50 Hz 930 800 1430 1220 5870 5240
A
400 Hz 910 770 1490 1300 3120 2740
1000 Hz 780 650 1430 1260 1880 1640
2500 Hz 490 400 1070 920 1000 860
Recovery voltage Vr50 50 50 V
Voltage before turn-on VdVDRM VDRM VDRM
Rise of on-state current dI/dt 50 - - A/μs
Heatsink temperature 405540554055°C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 μF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at heatsink temperature IT(AV) 180° conduction, half sine wave
Double side (single side) cooled
390 (150) A
55 (85) °C
Maximum RMS on-state current IT(RMS) DC at 25 °C heatsink temperature double side cooled 745
A
Maximum peak, one half cycle,
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5850
t = 8.3 ms 6130
t = 10 ms 100 % VRRM
reapplied
4920
t = 8.3 ms 5150
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
171
kA2s
t = 8.3 ms 156
t = 10 ms 100 % VRRM
reapplied
121
t = 8.3 ms 110
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1710 kA2s
Maximum peak on-state voltage VTM ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.58
VLow level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.05
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.09
Low level value of forward slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.88
m
High level value of forward slope
resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.82
Maximum holding current IHTJ = 25 °C, IT > 30 A 600 mA
Typical latching current ILTJ = 25 °C, VA = 12 V, Ra = 6 , IG = 1 A 1000
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
MIN. MAX.
Maximum non-repetitive rate
of rise of turned on current dI/dt TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt 1000 A/μs
Typical delay time tdTJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 μs
Resistive load, gate pulse: 10 V, 5 source 0.78
μs
Maximum turn-off time tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/μs
VR = 50 V, tp = 500 μs, dV/dt: See table in device code
10 30
180° el
ITM
180° el
ITM
100 µs
ITM
VS-ST223C..C Series
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request 500 V/μs
Maximum peak reverse and off-state leakage
current
IRRM,
IDRM TJ = TJ maximum, rated VDRM/VRRM applied 40 mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM TJ = TJ maximum, f = 50 Hz, d% = 50 60 W
Maximum average gate power PG(AV) 10
Maximum peak positive gate current IGM
TJ = TJ maximum, tp 5 ms
10 A
Maximum peak positive gate voltage +VGM 20 V
Maximum peak negative gate voltage -VGM 5
Maximum DC gate current required to trigger IGT TJ = 25 °C, VA = 12 V, Ra = 6 200 mA
Maximum DC gate voltage required to trigger VGT 3V
Maximum DC gate current not to trigger IGD TJ = TJ maximum, rated VDRM applied 20 mA
Maximum DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ-40 to +125 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance, junction to heatsink RthJ-hs
DC operation single side cooled 0.17
K/W
DC operation double side cooled 0.08
Maximum thermal resistance, case to heatsink RthC-hs
DC operation single side cooled 0.033
DC operation double side cooled 0.017
Mounting force, ± 10 % 4900
(500)
N
(kg)
Approximate weight 50 g
Case style See dimensions - link at the end of datasheet A-PUK (TO-200AB)
RthJ-hs CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.015 0.017 0.011 0.011
TJ = TJ maximum K/W
120° 0.019 0.019 0.019 0.019
90° 0.024 0.024 0.026 0.026
60° 0.035 0.035 0.036 0.037
30° 0.060 0.060 0.060 0.061
VS-ST223C..C Series
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - On-State Power Loss Characteristics
Fig. 6 - On-State Power Loss Characteristics
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30° 60° 90°
120° 180°
Average O n-state C urren t (A)
Conduction Angle
Maximum Allowable Heatsink Temperature (°C)
ST223C ..C Series
(Single Side Cooled)
R (DC) = 0.1 7 K/W
thJ- hs
20
30
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400 450
DC
30° 60°
90°
120°
180°
Average O n-state C urren t (A)
Conduction Period
M axim um Allowable Heatsink Temperature (°C)
ST223 C..C Series
(Single Side C oo led)
R (D C) = 0 .17 K/W
thJ-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500
30° 60° 90° 120° 180°
Average O n-state C urren t (A)
Conduction Angle
M aximum Allow able Heatsink Tem perature (°C)
ST223C ..C Series
(D ouble Side C o oled)
R ( D C ) = 0 .0 8 K / W
th J-hs
20
30
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600 700 800
DC
30° 60°
90°
120°
180°
A ve ra g e O n -sta te C u rre nt (A )
Conduction Period
Maximum Allowable Heatsink Temperature (°C)
ST 223C ..C Se ries
(D ouble Side C ooled)
R (D C ) = 0.08 K/W
thJ- hs
0
200
400
600
800
1000
0 100 200 300 400 500
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST223C..C Series
T = 125°C
J
0
200
400
600
800
1000
1200
1400
0 100 200 300 400 500 600 700 800
DC
180°
120°
90°
60°
30° RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST22 3C ..C Series
T = 125°C
J
VS-ST223C..C Series
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Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - On-State Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
Fig. 11 - Reverse Recovered Charge Characteristics
Fig. 12 - Reverse Recovered Current Characteristics
2500
3000
3500
4000
4500
5000
5500
001011
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
ST223C..C S eries
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.01 0.1 1
Pulse Train Duration (s)
M a x im u m N on R e p etitive S urg e Curre n t
V ersus P ulse Tra in D ura tion . C o ntro l
Of Conduction May Not Be Maintained.
Peak Half Sine W ave On -state C urrent (A)
In it i a l T = 1 2 5° C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST223C ..C Series
100
1000
10000
0246810
T = 25°C
J
In st a n ta n eo u s On -s ta t e C u rre nt ( A )
Instantaneous On-state Voltage (V)
T = 125°C
J
ST223C..C Series
0.00 1
0.01
0.1
1
0.00 1 0.01 0.1 1 10
Sq uare W a ve P ulse D u ration (s)
thJ-hs
Tr a n sie n t Th erm a l Im p e d a n c e Z (K/W )
ST22 3C ..C Series
Steady State Value
R = 0 .1 7 K/ W
(Sin g le Side C oo le d)
R = 0 .0 8 K/ W
(Double Side Cooled)
(D C O p e ration)
thJ-h s
thJ-hs
0
20
40
60
80
100
120
140
160
0 20406080100
M a xim um Reve rse Rec ove ry C u rrent - Irr (A)
Ra te O f Fa ll O f F orw a rd C urre n t - d i/d t (A /µs)
I = 50 0 A
300 A
200 A
100 A
50 A
TM
ST2 23C ..C Se rie s
T = 125 °C
J
VS-ST223C..C Series
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Fig. 13 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
Peak On-state Current (A)
1000
1500
3000
200
500
5000
ST223C..C Series
Sinusoidal pulse
T = 40°C
C
Snubb er circuit
R = 47 ohms
C = 0.22 µF
V = 80% V
s
s
DDRM
tp
10000
1E11E21E31E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
1000
1500
3000
200
500
5000 ST223C..C Series
Sinusoidal pulse
T = 55°C
C
Snubber circuit
R = 47 ohms
C = 0.22 µF
V = 80% V
s
s
DDRM
tp
10000
1E1
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
3000
200
500
Pulse Base w idth (µs)
Peak On-state Current (A)
ST22 3C ..C Series
Trapezoidal pulse
T = 40°C
di/dt = 50A/µs
C
Snu b b e r c irc uit
R = 47 ohms
C = 0.22 µF
V = 80% V
s
s
DDRM
5000
tp
10000
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
1000
1500
200
500
ST2 23 C..C S er ies
Trapezoidal pulse
T = 55°C
di/dt = 50A/µs
C
Snubber circuit
R = 47 ohms
C = 0.22 µF
V = 80% V
s
s
D
DRM
3000
tp
5000
10000
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
1000
1500
3000
200
500
Pulse B ase w idth (µs)
Pea k O n -state C u rre nt (A )
Snubb er circuit
R = 47 ohms
C = 0.22 µF
V = 80% V
s
s
DDRM
ST223C..C Series
Trapezoidal pulse
T = 40°C
di/d t = 100A/µs
5000
C
tp
10000
1E1 1E2 1E3 1E4
50 Hz
400
2500
100
Pulse Basewidth (µs)
1000
1500
200
500
ST223C..C Series
Trap ezoid al p ulse
T = 55°C
di/dt = 10 0A /µs
C
Snubber circuit
R = 47 ohms
C = 0.22 µF
V = 80% V
s
s
DDRM
3000
tp
5000
10000
VS-ST223C..C Series
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Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E1
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E4
Pulse Ba sew idth (µs)
20 joules per pulse
2
1
0.5
0.3
0.2
0.1
10
Peak On-state Current (A)
ST223C..C Series
Sinu s o id a l p ulse
4
tp
1E1 1E2 1E3 1E4
Pulse Basewidth (µs)
20 jo ules p er pulse
2
1
0.5
0.3
0.2
0.1
ST22 3C..C Se ries
Recta ngular pulse
di/d t = 50A/µs
10
5
tp
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IG D
(b)
(a)
Tj=25 °C
Tj=125 °C
Tj=-40 °C
(1) (2)
Instanta ne ous G ate C urrent (A )
Instanta neo us Gate V olta ge (V )
Rectangular gate pulse
a ) R e c o m m e n d e d lo a d li n e f o r
b ) Re c o m m e n d e d lo a d lin e f o r
<=30% rated di/dt : 10V, 10ohm s
rated di/dt : 20V , 10ohm s; tr<=1 µs
tr<=1 µs
(1) PGM = 10W , tp = 20m s
(2) PGM = 20W , tp = 10m s
(3) PGM = 40W , tp = 5m s
(4) PGM = 60W, tp = 3.3ms
(3 )
De vice : ST223C ..C Se rie s Frequen cy Limited by PG(AV )
(4)
VS-ST223C..C Series
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ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95074
3 = fast-on term.
(gate and aux. cathode soldered leads)
2- Thyristor
3-Essential part number
4- 3 = fast turn off
5- C = ceramic PUK
6- Voltage code x 100 = VRRM (see Voltage Ratings table)
11
7- C = PUK case A-PUK (TO-200AB)
8- Reapplied dV/dt code (for tq test condition)
9-t
q code
10 - 0 = eyelet term.
(gate and aux. cathode unsoldered leads)
1 = fast-on term.
(gate and aux. cathode unsoldered leads)
2 = eyelet term.
(gate and aux. cathode soldered leads)
- Critical dV/dt:
None = 500 V/μs (standard value)
L = 1000 V/μs (special selection)
* Standard part number.
All other types available only on request.
tq (µs)
dV/dt - tq combinations available
dV/dt (V/µs) 20 50 100 200 400
10 CN DN EN FN* --
12 CM DM EM FM --
15 CL DL EL FL* HL
18 CP DP EP FP HP
20 CK DK EK FK HK
25 -- -- -- -- HJ
30 -- -- -- -- HH
Device code
51 32 4 6 7 8 9 10 11
STVS-223C08C H K 1 -
1-Vishay Semiconductors product
Outline Dimensions
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A-PUK (TO-200AB)
DIMENSIONS in millimeters (inches)
4.75 (0.19)
28 (1.10)
6.5 (0.26)
19 (0.75)
DIA. MAX. 0.3 (0.01) MIN.
0.3 (0.01) MIN.
13.7/14.4
(0.54/0.57)
25° ± 5°
Gate terminal for
1.47 (0.06) DIA.
pin receptacle
19 (0.75)
DIA. MAX.
38 (1.50) DIA MAX.
2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep
42 (1.65) MAX.
Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)
C
A
G
Note:
A = Anode
C = Cathode
G = Gate
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