This document is a general product description and is subject to change without notice. Hynix semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.4/May. 02 1
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
3rd 128M DDR SDRAM
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
Rev. 0.4/May. 02 2
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
Revision History
1. Revision 0.2 (Nov.01)
1) Device operation and timing diagram removed
2) tHZ / tLZ SPEC defined
2. Revision 0.3 (Feb.02)
1) “Preliminary” removed
3. Revision 0.4 (May. 02)
1) Input leakage current changed from +/-5uA to +/-2uA
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
DESCRIPTION
The Hynix HY5DU28422A(L)T and HY5DU28822A(L)T and HY5DU281622A(L)T are a 134,217,728-bit CMOS Double
Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory
density and high bandwidth.
The Hynix 128Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
•VDD, VDDQ = 2.5V +/- 0.2V
• All inputs and outputs are compatible with SSTL_2
interface
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous - data transaction aligned to
bidirectional data strobe (DQS)
• Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
• On chip DLL align DQ and DQS transition with CK
transition
• DM mask write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges
of the clock
• Programmable /CAS latency 2 and 2.5 supported
• Programmable burst length 2 / 4 / 8 with both
sequential and interleave mode
• Internal four bank operations with single pulsed
/RAS
• Auto refresh and self refresh supported
• 4096 refresh cycles / 64ms
• JEDEC standard 400mil 66pin TSOP-II with 0.65mm
pin pitch
• Full and Half strength driver option controlled by
EMRS
ORDERING INFORMATION
Part No. Configuration Power
HY5DU28422AT-X* 32Mx4 Standard
HY5DU28422ALT-X* 32Mx4 Low Power
HY5DU28822AT-X* 16Mx8 Standard
HY5DU28822ALT-X* 16Mx8 Low Power
HY5DU281622AT-X* 8Mx16 Standard
HY5DU281622ALT-X* 8Mx16 Low Power
Rev. 0.4/May. 02 3
OPERATING FREQUENCY
* X means speed grade
** JEDEC specification compliant
Grade CL2 CL2.5 Remark**
- K 133MHz 133MHz DDR266A
- H 125MHz 133MHz DDR266B
- L 100MHz 125MHz DDR200
Rev. 0.4/May. 02 4
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
PIN CONFIGURATION
ROW AND COLUMN ADDRESS TABLE
ITEMS 32Mx4 16Mx8 8Mx16
Organization 8M x 4 x 4banks 4M x 8 x 4banks 2M x 16 x 4banks
Row Address A0 - A11 A0 - A11 A0 - A11
Column Address A0-A9, A11 A0-A9 A0-A8
Bank Address BA0, BA1 BA0, BA1 BA0, BA1
Auto Precharge Flag A10 A10 A10
Refresh 4K 4K 4K
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
VDD
DQ0
VDDQ
DQ1
DQ2
VSSQ
DQ3
DQ4
VDDQ
DQ5
DQ6
VSSQ
DQ7
NC
VDDQ
LDQS
NC
VDD
NC
LDM
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VSS
DQ15
VSSQ
DQ14
DQ13
VDDQ
DQ12
DQ11
VSSQ
DQ10
DQ9
VDDQ
DQ8
NC
VSSQ
UDQS
NC
VREF
VSS
UDM
/CK
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
DQ0
VDDQ
NC
DQ1
VSSQ
NC
DQ2
VDDQ
NC
DQ3
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VSS
DQ7
VSSQ
NC
DQ6
VDDQ
NC
DQ5
VSSQ
NC
DQ4
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
VDD
NC
VDDQ
NC
DQ0
VSSQ
NC
NC
VDDQ
NC
DQ1
VSSQ
NC
NC
VDDQ
NC
NC
VDD
NC
NC
/WE
/CAS
/RAS
/CS
NC
BA0
BA1
A10/AP
A0
A1
A2
A3
VDD
VSS
NC
VSSQ
NC
DQ3
VDDQ
NC
NC
VSSQ
NC
DQ2
VDDQ
NC
NC
VSSQ
DQS
NC
VREF
VSS
DM
/CK
CK
CKE
NC
NC
A11
A9
A8
A7
A6
A5
A4
VSS
x16 x8 x4x4 x8 x16
400mil X 875mil
66pin TSOP -II
0.65mm pin pitch
Rev. 0.4/May. 02 5
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
PIN DESCRIPTION
PIN TYPE DESCRIPTION
CK, /CK Input
Clock: CK and /CK are differential clock inputs. All address and control input signals are
sampled on the crossing of the positive edge of CK and negative edge of /CK. Output
(read) data is referenced to the crossings of CK and /CK (both directions of crossing).
CKE Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Taking CKE LOW provides PRECHARGE POWER
DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER DOWN (row
ACTIVE in any bank). CKE is synchronous for POWER DOWN entry and exit, and for SELF
REFRESH entry. CKE is asynchronous for SELF REFRESH exit, and for output disable. CKE
must be maintained high throughout READ and WRITE accesses. Input buffers, excluding
CK, /CK and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are
disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVCMOS LOW
level after Vdd is applied.
/CS Input
Chip Select : Enables or disables all inputs except CK, /CK, CKE, DQS and DM. All com-
mands are masked when CS is registered high. CS provides for external bank selection on
systems with multiple banks. CS is considered part of the command code.
BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read, Write or PRE-
CHARGE command is being applied.
A0 ~ A11 Input
Address Inputs: Provide the row address for ACTIVE commands, and the column address
and AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the
memory array in the respective bank. A10 is sampled during a precharge command to
determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10
HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The
address inputs also provide the op code during a MODE REGISTER SET command. BA0
and BA1 define which mode register is loaded during the MODE REGISTER SET command
(MRS or EMRS).
/RAS, /CAS, /WE Input Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command being
entered.
DM
(LDM, UDM) Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when
DM is sampled HIGH along with that input data during a WRITE access. DM is sampled
on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ
and DQS loading. For the x16, LDM corresponds to the data on DQ0-Q7; UDM corre-
sponds to the data on DQ8-Q15.
DQS
(LDQS, UDQS) I/O
Data Strobe: Output with read data, input with write data. Edge aligned with read data,
centered in write data. Used to capture write data. For the x16, LDQS corresponds to the
data on DQ0-Q7; UDQS corresponds to the data on DQ8-Q15.
DQ I/O Data input / output pin : Data bus
VDD/VSS Supply Power supply for internal circuits and input buffers.
VDDQ/VSSQ Supply Power supply for output buffers for noise immunity.
VREF Supply Reference voltage for inputs for SSTL interface.
NC NC No connection.
Rev. 0.4/May. 02 6
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
DM
Address
Buffer
ADD
Bank
Control 8Mx4/Bank0
Column Decoder
Column Address
Counter
Sense AMP
2-bit Prefetch Unit
8Mx4/Bank1
8Mx4/Bank2
8Mx4/Bank3
Mode
Register
Row
Decoder
Input Buffer Output Buffer
DLL
Block
Mode
Register
Data Strobe
Transmitter
Data Strobe
Receiver
DQS
CLK
/CLK
DS
Write Data Register
2-bit Prefetch Unit DS
DQ [0:3]
84
4
8
CLK_DLL
BA0, BA1
FUNCTIONAL BLOCK DIAGRAM (32Mx4)
4Banks x 8Mbit x 4 I/O Double Data Rate Synchronous DRAM
Rev. 0.4/May. 02 7
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
DM
Address
Buffer
ADD
Bank
Control 4Mx8/Bank0
Column Decoder
Column Address
Counter
Sense AMP
2-bit Prefetch Unit
4Mx8/Bank1
4Mx8/Bank2
4Mx8/Bank3
Mode
Register
Row
Decoder
Input Buffer Output Buffer
DLL
Block
Mode
Register
Data Strobe
Transmitter
Data Strobe
Receiver
DQS
CLK
/CLK
DS
Write Data Register
2-bit Prefetch Unit DS
DQ [0:7]
16 8
8
16
CLK_DLL
BA0,BA1
FUNCTIONAL BLOCK DIAGRAM (16Mx8)
4Banks x 4Mbit x 8 I/O Double Data Rate Synchronous DRAM
Rev. 0.4/May. 02 8
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
LDM
Address
Buffer
ADD
Bank
Control 2Mx16/Bank0
Column Decoder
Column Address
Counter
Sense AMP
2-bit Prefetch Unit
2Mx16/Bank1
2Mx16/Bank2
2Mx16/Bank3
Mode
Register
Row
Decoder
Input Buffer Output Buffer
DLL
Block
Mode
Register
Data Strobe
Transmitter
Data Strobe
Receiver
LDQS, UDQS
CLK
/CLK
LDQS
UDQS
Write Data Register
2-bit Prefetch Unit DS
DQ[0:15]
32 16
16
32
CLK_DLL
BA0, BA1
UDM
FUNCTIONAL BLOCK DIAGRAM (8Mx16)
4Banks x 2Mbit x 16 I/O Double Data Rate Synchronous DRAM
Rev. 0.4/May. 02 9
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
SIMPLIFIED COMMAND TRUTH TABLE
Command CKEn-1 CKEn CS RAS CAS WE ADDR A10/
AP BA Note
Extended Mode Register SetH X LLLL OP code 1,2
Mode Register Set H X LLLL OP code 1,2
Device Deselect
HX
HXXX
X1
No Operation LHHH
Bank Active H X L L H H RA V 1
Read
H X LHLHCA
L
V
1
Read with Autoprecharge H1,3
Write
HXLHLLCA
L
V
1
Write with Autoprecharge H1,4
Precharge All Banks
HXLLHLX
HX1,5
Precharge selected Bank LV1
Read Burst Stop H X L H H L X 1
Auto Refresh H HLLLH X 1
Self Refresh
EntryH L LLLH
X
1
Exit L H
HXXX
1
LHHH
Precharge Power
Down Mode
Entry H L
HXXX
X
1
LHHH 1
Exit L H
HXXX 1
LHHH 1
Active Power
Down Mode
Entry H L
HXXX
X
1
LVVV 1
Exit L H X 1
Note :
1. LDM/UDM states are Don’t Care. Refer to below Write Mask Truth Table.
2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting duing Extended MRS or MRS.
Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP
period from Prechagre command.
3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+tRP).
4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time
(tWR) is needed to guarantee that the last data has been completely written.
5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be
precharged.
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
Rev. 0.4/May. 02 10
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
WRITE MASK TRUTH TABLE
Function CKEn-1 CKEn /CS, /RAS,
/CAS, /WE DM ADDR A10/
AP BA Note
Data Write H X X L X 1
Data-In Mask H X X H X 1
Note :
1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related
with read data. In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15)
respectively.
Rev. 0.4/May. 02 11
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
OPERATION COMMAND TRUTH TABLE-I
Current
State /CS /RAS /CAS /WE Address Command Action
IDLE
HXXX X DSEL NOP or power down3
LHHH X NOP NOP or power down3
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4
L L H H BA, RA ACT Row Activation
LLHL BA, AP PRE/PALL NOP
LLLH X AREF/SREF Auto Refresh or Self Refresh5
L L L L OPCODE MRS Mode Register Set
ROW
ACTIVE
HXXX X DSEL NOP
LHHH X NOP NOP
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP Begin read : optional AP6
L H L L BA, CA, AP WRITE/WRITEAP Begin write : optional AP6
LLHHBA, RA ACT ILLEGAL4
LLHL BA, AP PRE/PALL Precharge7
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
READ
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
LHHL X BST Terminate burst
L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL
LLHHBA, RA ACT ILLEGAL4
L L H L BA, AP PRE/PALL Term burst, precharge
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP Term burst, new read:optional AP8
L H L L BA, CA, AP WRITE/WRITEAP Term burst, new write:optional AP
Rev. 0.4/May. 02 12
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
OPERATION COMMAND TRUTH TABLE-II
Current
State /CS /RAS /CAS /WE Address Command Action
WRITE
LLHHBA, RA ACT ILLEGAL4
L L H L BA, AP PRE/PALL Term burst, precharge
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
READ
WITH
AUTOPRE-
CHARGE
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
LHHL X BST ILLEGAL
L H L H BA, CA, AP READ/READAP ILLEGAL10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,10
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
AUTOPRE-
CHARGE
H X X X X DSEL Continue burst to end
L H H H X NOP Continue burst to end
LHHL X BST ILLEGAL
L H L H BA, CA, AP READ/READAP ILLEGAL10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL10
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,10
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
PRE-
CHARGE
HXXX X DSEL NOP-Enter IDLE after tRP
L H H H X NOP NOP-Enter IDLE after tRP
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4,10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
LLHHBA, RA ACT ILLEGAL4,10
L L H L BA, AP PRE/PALL NOP-Enter IDLE after tRP
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
Rev. 0.4/May. 02 13
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
OPERATION COMMAND TRUTH TABLE-III
Current
State /CS /RAS /CAS /WE Address Command Action
ROW
ACTIVATING
H X X X X DSEL NOP - Enter ROW ACT after tRCD
L H H H X NOP NOP - Enter ROW ACT after tRCD
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4,10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
LLHHBA, RA ACT ILLEGAL4,9,10
LLHL BA, AP PRE/PALL ILLEGAL4,10
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
RECOVERING
H X X X X DSEL NOP - Enter ROW ACT after tWR
L H H H X NOP NOP - Enter ROW ACT after tWR
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
H X X X X DSEL NOP - Enter precharge after tDPL
L H H H X NOP NOP - Enter precharge after tDPL
LHHL X BST ILLEGAL4
L H L H BA, CA, AP READ/READAP ILLEGAL4,8,10
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL4,10
LLHHBA, RA ACT ILLEGAL4,10
LLHL BA, AP PRE/PALL ILLEGAL4,11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
REFRESHING
H X X X X DSEL NOP - Enter IDLE after tRC
L H H H X NOP NOP - Enter IDLE after tRC
LHHL X BST ILLEGAL11
L H L H BA, CA, AP READ/READAP ILLEGAL11
Rev. 0.4/May. 02 14
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
OPERATION COMMAND TRUTH TABLE-IV
Note :
1. H - Logic High Level, L - Logic Low Level, X - Don’t Care, V - Valid Data Input,
BA - Bank Address, AP - AutoPrecharge Address, CA - Column Address, RA - Row Address, NOP - NO Operation.
2. All entries assume that CKE was active(high level) during the preceding clock cycle.
3. If both banks are idle and CKE is inactive(low level), then in power down mode.
4. Illegal to bank in specified state. Function may be legal in the bank indicated by Bank Address(BA) depending on the state of
that bank.
5. If both banks are idle and CKE is inactive(low level), then self refresh mode.
6. Illegal if tRCD is not met.
7. Illegal if tRAS is not met.
8. Must satisfy bus contention, bus turn around, and/or write recovery requirements.
9. Illegal if tRRD is not met.
10. Illegal for single bank, but legal for other banks in multi-bank devices.
11. Illegal for all banks.
Current
State /CS /RAS /CAS /WE Address Command Action
WRITE
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11
LLHHBA, RA ACT ILLEGAL11
LLHL BA, AP PRE/PALL ILLEGAL11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
MODE
REGISTER
ACCESSING
H X X X X DSEL NOP - Enter IDLE after tMRD
L H H H X NOP NOP - Enter IDLE after tMRD
LHHL X BST ILLEGAL11
L H L H BA, CA, AP READ/READAP ILLEGAL11
L H L L BA, CA, AP WRITE/WRITEAP ILLEGAL11
LLHHBA, RA ACT ILLEGAL11
LLHL BA, AP PRE/PALL ILLEGAL11
LLLH X AREF/SREF ILLEGAL11
LLLLOPCODE MRS ILLEGAL11
Rev. 0.4/May. 02 15
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
CKE FUNCTION TRUTH TABLE
Note :
When CKE=L, all DQ and DQS must be in Hi-Z state.
1. CKE and /CS must be kept high for a minimum of 200 stable input clocks before issuing any command.
2. All command can be stored after 2 clocks from low to high transition of CKE.
3. Illegal if CLK is suspended or stopped during the power down mode.
4. Self refresh can be entered only from the all banks idle state.
5. Disabling CLK may cause malfunction of any bank which is in active state.
Current
State
CKEn-
1CKEn /CS /RAS /CAS /WE /ADD Action
SELF
REFRESH1
H XXXXXX INVALID
L H H X X X X Exit self refresh, enter idle after tSREX
L H L H H H X Exit self refresh, enter idle after tSREX
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
L LXXXXX NOP, continue self refresh
POWER
DOWN2
H XXXXXX INVALID
L H H X X X X Exit power down, enter idle
L H L H H H X Exit power down, enter idle
L H L H H L X ILLEGAL
L H L H L X X ILLEGAL
L H L L X X X ILLEGAL
L L X X X X X NOP, continue power down mode
ALL BANKS
IDLE4
H H X X X X X See operation command truth table
HLLLLHX Enter self refresh
H L H X X X X Exit power down
H L L H H H X Exit power down
H L L H H L X ILLEGAL
H L L H L X X ILLEGAL
H L L L H X X ILLEGAL
HLLLLLX ILLEGAL
L LXXXXX NOP
ANY STATE
OTHER
THAN
ABOVE
H H X X X X X See operation command truth table
H LXXXXX ILLEGAL5
L HXXXXX INVALID
L LXXXXX INVALID
Rev. 0.4/May. 02 16
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
SIMPLIFIED STATE DIAGRAM
MRS SREF
SREX
PDEN
PDEX
ACT
AREF
PDEX
PDEN
BST
READWRITE
WRITE
WRITEAP
WRITEAP
READ
READAP
READAP
PRE(PALL)
PRE(PALL)
PRE(PALL)
Command Input
Automatic Sequence
IDLE
AUTO
REFRESH
PRE-
CHARGE
POWER-UP
POWER APPLIED
MODE
REGISTER
SET
POWER
DOWN
WRITE
WITH
AUTOPRE-
CHARGE
POWER
DOWN
WRITE
READ
WITH
AUTOPRE-
CHARGE
BANK
ACTIVE
READ
SELF
REFRESH
Rev. 0.4/May. 02 17
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
POWER-UP SEQUENCE AND DEVICE INITIALIZATION
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation. Power must first be applied to VDD, then to VDDQ, and finally to VREF
(and to the system VTT). VTT must be applied after VDDQ to avoid device latch-up, which may cause permanent dam-
age to the device. VREF can be applied anytime after VDDQ, but is expected to be nominally coincident with VTT.
Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect
an LVCMOS LOW level after VDD is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to
guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal oper-
ation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR
SDRAM requires a 200us delay prior to applying an executable command.
Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED
MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE
REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. 200 clock cycles are required between the DLL reset and any command. During the 200 cycles of CK, for
DLL locking, executable commands are disallowed (a DESELECT or NOP command must be applied). After the 200
clock cycles, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command
for the Mode Register, with the reset DLL bit deactivated (i.e. to program operating parameters without resetting the
DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
1. Apply power - VDD, VDDQ, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVC-
MOS low state. (All the other input pins may be undefined.)
• VDD and VDDQ are driven from a single power converter output.
• VTT is limited to 1.44V (reflecting VDDQ(max)/2 + 50mV VREF variation + 40mV VTT variation.
• VREF tracks VDDQ/2.
• A minimum resistance of 42 Ohms (22 ohm series resistor + 22 ohm parallel resistor - 5% tolerance) limits the
input current from the VTT supply into any pin.
• If the above criteria cannot be met by the system design, then the following sequencing and voltage relation-
ship must be adhered to during power up.
2. Start clock and maintain stable clock for a minimum of 200usec.
3. After stable power and clock, apply NOP condition and take CKE high.
4. Issue Extended Mode Register Set (EMRS) to enable DLL.
5. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200
cycles of clock are required for locking DLL)
6. Issue Precharge commands for all banks of the device.
Voltage description Sequencing Voltage relationship to avoid latch-up
VDDQ After or with VDD < VDD + 0.3V
VTT After or with VDDQ < VDDQ + 0.3V
VREF After or with VDDQ < VDDQ + 0.3V
Rev. 0.4/May. 02 18
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HY5DU28822A(L)T
HY5DU281622A(L)T
7. Issue 2 or more Auto Refresh commands.
8. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low.
Power-Up Sequence
/CLK
CLK
VDD
DQS
DQ’s
MRSAREFPRENOPMRSEMRSPRENOP
CODE CODE CODE
CODE CODE CODE
CODE CODE CODE
VDDQ
VREF
CKE
CMD
BA0,BA1
A10
ADDR
DM
≈≈ ≈≈≈≈≈≈≈
≈≈ ≈≈≈ ≈≈≈≈
≈≈ ≈≈≈ ≈≈≈≈
≈≈≈≈≈ ≈≈≈≈
≈≈≈≈≈ ≈≈≈≈
tVTD
T=200usec tMRD 200 cycles of CK* tRP tRFC
Power up
VDD and CK stable Precharge All
EMRS Set MRS Set
Reset DLL
(with A8=H)
Precharge All
2 or more
Auto Refresh
MRS Set
(with A8=L)
*200 cycles of CK are required (for DLL locking) before any executable command can be applied.
VTT
tRP
tIS tIH
Rev. 0.4/May. 02 19
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
MODE REGISTER SET (MRS)
The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is programed via MRS command. This command is issued by the
low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and
CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to
write the data in mode register. During the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until resetted by another MRS command.
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 0 RFU DR TM CAS Latency BT Burst Length
A2 A1 A0
Burst Length
Sequential Interleave
0 0 0 Reserved Reserved
001 2 2
010 4 4
011 8 8
1 0 0 Reserved Reserved
1 0 1 Reserved Reserved
1 1 0 Reserved Reserved
1 1 1 Reserved Reserved
A3 Burst Type
0 Sequential
1 Interleave
A6 A5 A4 CAS Latency
000 Reserved
001 Reserved
010 2
011 Reserved
100 Reserved
101 Reserved
110 2.5
111 Reserved
A7 Tes t Mo de
0Normal
1Vendor
Tes t Mo de
A8 DLL Reset
0No
1Yes
BA0 MRS Type
0MRS
1EMRS
Rev. 0.4/May. 02 20
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BURST DEFINITION
BURST LENGTH & TYPE
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst
length determines the maximum number of column locations that can be accessed for a given Read or Write com-
mand. Burst lengths of 2, 4, or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2-Ai when the burst length is
set to four and by A3-Ai when the burst length is set to eight (where Ai is the most significant column address bit for a
given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location within
the block. The programmed burst length applies to both Read and Write bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definitionon Table
Burst Length Starting Address (A2,A1,A0) Sequential Interleave
2
XX0 0, 1 0, 1
XX1 1, 0 1, 0
4
X00 0, 1, 2, 3 0, 1, 2, 3
X01 1, 2, 3, 0 1, 0, 3, 2
X10 2, 3, 0, 1 2, 3, 0, 1
X11 3, 0, 1, 2 3, 2, 1, 0
8
000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6
010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5
011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2
110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1
111 0, 1, 2, 3, 4, 5, 6, 7 7, 6, 5, 4, 3, 2, 1, 0
Rev. 0.4/May. 02 21
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
CAS LATENCY
The Read latency, or CAS latency, is the delay, in clock cycles, between the registration of a Read command and the
availability of the first burst of output data. The latency can be programmed 2 or 2.5 clocks.
If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident
with clock edge n + m.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
DLL RESET
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon return-
ing to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically
disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any
time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally
applied clock before an any command can be issued.
OUTPUT DRIVER IMPEDANCE CONTROL
The normal drive strength for all outputs is specified to be SSTL_2, Class II. Hynix also supports a half strength driver
option, intended for lighter load and/or point-to-point environments. Selection of the half strength driver option will
reduce the output drive strength by 50% of that of the full strength driver. I-V curves for both the full strength driver
and the half strength driver are included in this document.
Rev. 0.4/May. 02 22
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HY5DU28822A(L)T
HY5DU281622A(L)T
EXTENDED MODE REGISTER SET (EMRS)
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional func-
tions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits
shown below. The Extended Mode Register is programmed via the Mode Register Set command ( BA0=1 and BA1=0)
and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller
must wait the specified time before initiating any subsequent operation. Violating either of these requirements will
result in unspecified operation.
BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
01 RFU* 0**DSDLL
A0 DLL enable
0Enable
1Diable
BA0 MRS Type
0MRS
1EMRS
A1 Output Driver
Impedance Control
0 Full Strength Driver
1 Half Strength Driver
* All bits in RFU address fields must be programmed to Zero, all other states are reserved for future usage
** This part do not support /QFC function, A2 must be programmed to Zero.
Rev. 0.4/May. 02 23
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Note :
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed +/- 2% of the DC value.
DC CHARACTERISTICS I (TA=0 to 70°C, Voltage referenced to VSS = 0V)
Note : 1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to 2.7V
Parameter Symbol Rating Unit
Ambient Temperature TA0 ~ 70 oC
Storage Temperature TSTG -55 ~ 125 oC
Voltage on Any Pin relative to VSS VIN, VOUT -0.5 ~ 3.6 V
Voltage on VDD relative to VSS VDD -0.5 ~ 3.6 V
Voltage on VDDQ relative to VSS VDDQ -0.5 ~ 3.6 V
Output Short Circuit Current IOS 50 mA
Power Dissipation PD1W
Soldering Temperature ⋅ Time TSOLDER 260 ⋅ 10 oC ⋅ sec
Parameter Symbol Min Typ. Max Unit Note
Power Supply Voltage VDD 2.3 2.5 2.7 V
Power Supply Voltage VDDQ 2.3 2.5 2.7 V 1
Input High Voltage VIH VREF + 0.15 - VDDQ + 0.3 V
Input Low Voltage VIL -0.3 - VREF - 0.15 V 2
Termination Voltage VTT VREF - 0.04 VREF VREF + 0.04 V
Reference Voltage VREF 0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V 3
Parameter Symbol Min. Max Unit Note
Input Leakage Current ILI -2 2 uA 1
Output Leakage Current ILO -5 5 uA 2
Output High Voltage VOH VTT + 0.76 - V IOH = -15.2mA
Output Low Voltage VOL -VTT - 0.76 V IOL = +15.2mA
Rev. 0.4/May. 02 24
HY5DU28422A(L)T
HY5DU28822A(L)T
HY5DU281622A(L)T
DC CHARACTERISTICS II (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
32Mx4
Parameter Symbol Test Condition
Speed
Unit Note
-K -H -L
Operating Current IDD0
One bank; Active - Precharge ;tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
130 130 120 mA
Operating Current IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
clock cycle
130 130 120 mA
Precharge Power Down
Standby Current IDD2P All banks idle; Power down mode ;CKE=Low,
tCK=tCK(min) 20 mA
Idle Standby Current IDD2F
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN=VREF for DQ, DQS and DM
40 40 35 mA
Active Power Down
Standby Current IDD3P One bank active; Power down mode ; CKE=Low,
tCK=tCK(min) 25 mA
Active Standby Current IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing
once per clock cycle
70 70 50 mA
Operating Current IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
180 180 160
mA
Operating Current IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
230 230 210
Auto Refresh Current IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
220 220 200
Self Refresh Current IDD6 CKE=<0.2V; External clock on;
tCK=tCK(min)
Normal 2
mA
Low Power 1
Operating Current - Four
Bank Operation IDD7 Four bank interleaving with BL=4, Refer to the
following page for detailed test condition 270 270 240 mA
Rev. 0.4/May. 02 25
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DC CHARACTERISTICS II (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
16Mx8
Parameter Symbol Test Condition
Speed
Unit Note
-K -H -L
Operating Current IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
140 140 130 mA
Operating Current IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
clock cycle
140 140 130 mA
Precharge Power Down
Standby Current IDD2P All banks idle; Power down mode; CKE=Low,
tCK=tCK(min) 20 mA
Idle Standby Current IDD2F
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN =VREF for DQ, DQS and DM
40 40 35 mA
Active Power Down
Standby Current IDD3P One bank active; Power down mode; CKE=Low,
tCK=tCK(min) 25 mA
Active Standby Current IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing
once per clock cycle
70 70 50 mA
Operating Current IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
200 200 180
mA
Operating Current IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
250 250 230
Auto Refresh Current IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
220 220 200
Self Refresh Current IDD6 CKE=<0.2V; External clock on;
tCK=tCK(min)
Normal 2
mA
Low Power 1
Operating Current - Four
Bank Operation IDD7 Four bank interleaving with BL=4, Refer to the
following page for detailed test condition 280 280 250 mA
Rev. 0.4/May. 02 26
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DC CHARACTERISTICS II (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
8Mx16
Parameter Symbol Test Condition
Speed
Unit Note
-K -H -L
Operating Current IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min) ; DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
150 150 140 mA
Operating Current IDD1
One bank; Active - Read - Precharge; Burst
Length=2 ; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
clock cycle
150 150 140 mA
Precharge Power Down
Standby Current IDD2P All banks idle; Power down mode ; CKE=Low,
tCK=tCK(min) 20 mA
Idle Standby Current IDD2F
/CS=High, All banks idle; tCK=tCK min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN=VREF for DQ, DQ, and DM
40 40 35 mA
Active Power Down
Standby Current IDD3P One bank active; Power down mode; CKE=Low,
tCK=tCK(min) 25 mA
Active Standby Current IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS (max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per clock
cycle; Address and other control inputs changing
once per clock cycle
70 70 50 mA
Operating Current IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
200 200 180
mA
Operating Current IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
250 250 230
Auto Refresh Current IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
220 220 200
Self Refresh Current IDD6 CKE=< 0.2V; External clock on;
tCK=tCK(min)
Normal 2
mA
Low Power 1
Operating Current - Four
Bank Operation IDD7 Four bank interleaving with BL=4, Refer to the
following page for detailed test condition 325 325 300 mA
Rev. 0.4/May. 02 27
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DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7
IDD1 : Operating current: One bank operation
1. Typical Case : VDD = 2.5V, T=25 oC
2. Worst Case : VDD = 2.7V, T= 10 oC
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are
changing once per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL = 4, tRCD = 2*tCK, tRAS = 5*tCK
Read : A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read : A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
IDD7 : Operating current: Four bank operation
1. Typical Case : VDD = 2.5V, T=25 oC
2. Worst Case : VDD = 2.7V, T= 10 oC
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2) : tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5) : tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266A (133Mhz, CL=2) : tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Rev. 0.4/May. 02 28
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AC OPERATING CONDITIONS (TA=0 to 70 oC, Voltage referenced to VSS = 0V)
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of VIX is expected to equal 0.5*V DDQ of the transmitting device and must track variations in the DC level of the same.
AC OPERATING TEST CONDITIONS (TA=0 to 70oC, Voltage referenced to VSS = 0V)
Parameter Symbol Min Max Unit Note
Input High (Logic 1) Voltage, DQ, DQS and DM signals VIH(AC) VREF + 0.31 V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals VIL(AC) VREF - 0.31 V
Input Differential Voltage, CK and /CK inputs VID(AC) 0.7 VDDQ + 0.6 V 1
Input Crossing Point Voltage, CK and /CK inputs VIX(AC) 0.5*VDDQ-0.2 0.5*VDDQ+0.2 V 2
Parameter Value Unit
Reference Voltage VDDQ x 0.5 V
Termination Voltage VDDQ x 0.5 V
AC Input High Level Voltage (VIH, min) VREF + 0.31 V
AC Input Low Level Voltage (VIL, max) VREF - 0.31 V
Input Timing Measurement Reference Level Voltage VREF V
Output Timing Measurement Reference Level Voltage VTT V
Input Signal maximum peak swing 1.5 V
Input minimum Signal Slew Rate 1 V/ns
Termination Resistor (RT)50Ω
Series Resistor (RS)25Ω
Output Load Capacitance for Access Time Measurement (CL)30 pF
Rev. 0.4/May. 02 29
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AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
Parameter Symbol
-K(DDR266A) -H(DDR266B) -L(DDR200)
Unit Note
Min Max Min Max Min Max
Row Cycle Time tRC 65 - 65 - 70 - ns
Auto Refresh Row Cycle Time tRFC 75 - 75 - 80 - ns
Row Active Time tRAS 45 120K 45 120K 50 120K ns
Active to Read with Auto Precharge Delay tRAP 20 - 20 - 20 - ns 16
Row Address to Column Address Delay tRCD 20 - 20 - 20 - ns
Row Active to Row Active Delay tRRD 15 - 15 - 15 - ns
Column Address to Column Address Delay tCCD 1-1-1-CK
Row Precharge Time tRP 20 - 20 - 20 - ns
Write Recovery Time tWR 15 - 15 - 20 - ns
Last Data-In to Read Command tDRL 1-1-1-CK
Auto Precharge Write Recovery + Precharge
Time tDAL 5-5-4-CK15
System Clock Cycle Time
CL = 2.5
tCK
7.5157.51510 15ns
CL = 2 7.5 15 10 15 10 15 ns
Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 CK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 CK
Data-Out edge to Clock edge Skew tAC -0.75 0.75 -0.75 0.75 -0.8 0.8 ns
DQS-Out edge to Clock edge Skew tDQSCK -0.75 0.75 -0.75 0.75 -0.8 0.8 ns
DQS-Out edge to Data-Out edge Skew tDQSQ - 0.5 - 0.5 - 0.6 ns
Data-Out hold time from DQS tQH tHPmin
-tQHS -tHPmin
-tQHS -tHPmin
-tQHS -ns1, 10
Clock Half Period tHP tCH/L
min -tCH/L
min -tCH/L
min -ns1,9
Data Hold Skew Factor tQHS - 0.75 - 0.75 - 1 ns 10
Valid Data Output Window tDV tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns
Data-out high-impedance window from CK, /CK tHZ -0.7 0.75 -0.7 0.75 -0.8 0.8 ns
Data-out low-impedance window from CK, /CK tLZ -0.7 0.75 -0.7 0.75 -0.8 0.8 ns
Input Setup Time (fast slew rate) tIS 0.9 - 0.9 - 1.2 - ns 2,3,5,6
Input Hold Time (fast slew rate) tIH 0.9 - 0.9 - 1.2 - ns 2,3,5,6
Input Setup Time (slow slew rate) tIS 1.0 - 1.0 - 1.2 - ns 2,4,5,6
Rev. 0.4/May. 02 30
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Note :
1. This calculation accounts for tDQSQ(max), the pulse width distortion of on-chip circuit and jitter.
2. Data sampled at the rising edges of the clock : A0~A11, BA0~BA1, CKE, /CS, /RAS, /CAS, /WE.
3. For command/address input slew rate >=1.0V/ns
4. For command/address input slew rate >=0.5V/ns and <1.0V/ns
This derating table is used to increase tIS/tIH in case where the input slew-rate is below 0.5V/ns.
Input Setup / Hold Slew-rate Derating Table.
5. CK, /CK slew rates are >=1.0V/ns
6. These parameters guarantee device timing, but they are not necessarily tested on each device, and they may be guaranteed by
design or tester correlation.
7. Data latched at both rising and falling edges of Data Strobes(LDQS/UDQS) : DQ, LDM/UDM.
8. Minimum of 200 cycles of stable input clocks after Self Refresh Exit command, where CKE is held high, is required to complete
Self Refresh Exit and lock the internal DLL circuit of DDR SDRAM.
Input Hold Time (slow slew rate) tIH 1.0 - 1.0 - 1.2 - ns 2,4,5,6
Input Pulse Width tIPW 2.2 2.2 - ns 6
Write DQS High Level Width tDQSH 0.35 - 0.35 - 0.35 - CK
Write DQS Low Level Width tDQSL 0.35 - 0.35 - 0.35 - CK
Clock to First Rising edge of DQS-In tDQSS 0.75 1.25 0.75 1.25 0.75 1.25 CK
Data-In Setup Time to DQS-In (DQ & DM) tDS 0.5-0.5-0.6-ns
6,7,
11~13
Data-in Hold Time to DQS-In (DQ & DM) tDH 0.5-0.5-0.6-ns
6,7,
11~13
DQ & DM Input Pulse Width tDIPW 1.75 - 1.75 - 2 - ns
Read DQS Preamble Time tRPRE 0.91.10.91.10.91.1CK
Read DQS Postamble Time tRPST 0.40.60.40.60.40.6CK
Write DQS Preamble Setup Time tWPRES 0-0-0-CK
Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - CK
Write DQS Postamble Time tWPST 0.40.60.40.60.40.6CK
Mode Register Set Delay tMRD 2-2-2-CK
Exit Self Refresh to Any Execute Command tXSC 200 - 200 - 200 - CK 8
Average Periodic Refresh Interval tREFI - 15.6 - 15.6 - 15.6 us
Input Setup / Hold Slew-rate Delta tIS Delta tIH
V/ns ps ps
0.5 0 0
0.4 +50 0
0.3 +100 0
Parameter Symbol
-K(DDR266A) -H(DDR266B) -L(DDR200)
Unit Note
Min Max Min Max Min Max
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9. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
10. tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS consists of
tDQSQmax, the pulse width distortion of on-chip clock circuits, data pin to pin skew and output pattern effects and p-channel to
n-channel variation of the output drivers.
11. This derating table is used to increase tDS/tDH in case where the input slew-rate is below 0.5V/ns.
Input Setup / Hold Slew-rate Derating Table.
12. I/O Setup/Hold Plateau Derating. This derating table is used to increase tDS/tDH in case where the input level is flat below VREF
+/-310mV for a duration of up to 2ns.
13. I/O Setup/Hold Delta Inverse Slew Rate Derating. This derating table is used to increase tDS/tDH in case where the DQ and
DQS slew rates differ. The Delta Inverse Slew Rate is calculated as (1/SlewRate1)-(1/SlewRate2). For example, if slew rate 1 =
0.5V/ns and Slew Rate2 = 0.4V/n then the Delta Inverse Slew Rate = -0.5ns/V.
14. DQS, DM and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal tran-
sitions through the DC region must be monotonic.
15. tDAL = (tDPL / tCK ) + (tRP / tCK ). For each of the terms above, if not already an integer, round to the next highest integer.
tCK is equal to the actual system clock cycle time.
Example: For DDR266B at CL=2.5 and tCK = 7.5 ns,
tDAL = (15 ns / 7.5 ns) + (20 ns / 7.5 ns) = (2.00) + (2.67)
Round up each non-integer to the next highest integer: = (2) + (3), tDAL = 5 clocks
16. For the parts which do not has internal RAS lockout circuit, Active to Read with Auto precharge delay should be tRAS-(BL/2) x
tCK.
Input Setup / Hold Slew-rate Delta tDS Delta tDH
V/ns ps ps
0.5 0 0
0.4 +75 +75
0.3 +150 +150
I/O Input Level Delta tDS Delta tDH
mV ps ps
+280 +50 +50
(1/SlewRate1)-(1/SlewRate2) Delta tDS Delta tDH
ns/V ps ps
000
+/-0.25 +50 +50
+/- 0.5 +100 +100
Rev. 0.4/May. 02 32
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CAPACITANCE (TA=25oC, f=100MHz )
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Parameter Pin Symbol Min Max Unit
Input Clock Capacitance CK, /CK CI1 2.0 3.0 pF
Delta Input Clock Capacitance CK, /CK Delta CI1 -0.25pF
Input Capacitance All other input-only pins CI1 2.0 3.0 pF
Delta Input Capacitance All other input-only pins Delta CI2 -0.5pF
Input / Output Capacitance DQ, DQS, DM CIO 4.0 5.0 pF
Delta Input / Output Capacitance DQ, DQS, DM Delta CIO -0.5pF
VREF
VTT
RT=50Ω
Zo=50Ω
CL=30pF
Output
Rev. 0.4/May. 02 33
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OUTPUT DRIVE CHARACTERISTICS (FULL STRENGTH DRIVER)
Evaluation conditions:
Typical 25 oC (TAmbient), VDDQ=2.5V, typical process
Minimum 70 oC (TAmbient), VDDQ=2.3V, slow slow process
Maximum 0 oC (TAmbient), VDDQ=2.7V, fast fast process
Voltage
Pull Down Current (mA) Pull Up Current (mA)
Nominal
Low
Nominal
High Minimum Maximum Nominal
Low
Nominal
High Minimum Maximum
0.1 6.0 6.8 4.6 9.6 -6.1 -7.6 -4.6 -10
0.2 12.2 13.5 9.2 18.2 -12.2 -14.5 -9.2 -20
0.3 18.1 20.1 13.8 26.0 -18.1 -21.2 -13.8 -29.8
0.4 24.1 26.6 18.4 33.9 -24.0 -27.7 -18.4 -38.8
0.5 29.8 33.0 23.0 41.8 -29.8 -34.1 -23.0 -46.8
0.6 34.6 39.1 27.7 49.4 -34.3 -40.5 -27.7 -54.4
0.7 39.4 44.2 32.2 56.8 -38.1 -46.9 -32.2 -61.8
0.8 43.7 49.8 36.8 63.2 -41.1 -53.1 -36.0 -69.5
0.9 47.5 55.2 39.6 69.9 -43.8 -59.4 -38.2 -77.3
1.0 51.3 60.3 42.6 76.3 -46.0 -65.5 -38.7 -85.2
1.1 54.1 65.2 44.8 82.5 -47.8 -71.6 -39.0 -93.0
1.2 56.2 69.9 46.2 88.3 -49.2 -77.6 -39.2 -100.6
1.3 57.9 74.2 47.1 93.8 -50.0 -83.6 -39.4 -108.1
1.4 59.3 78.4 47.4 99.1 -50.5 -89.7 -39.6 -115.5
1.5 60.1 82.3 47.7 103.8 -50.7 -95.5 -39.9 -123.0
1.6 60.5 85.9 48.0 108.4 -51.0 -101.3 -40.1 -130.4
1.7 61.0 89.1 48.4 112.1 -51.1 -107.1 -40.2 -136.7
1.8 61.5 92.2 48.9 115.9 -51.3 -112.4 -40.3 -144.2
1.9 62.0 95.3 49.1 119.6 -51.5 -118.7 -40.4 -150.5
2.0 62.5 97.2 49.4 123.3 -51.6 -124.0 -40.5 -156.9
2.1 62.8 99.1 49.6 126.5 -51.8 -129.3 -40.6 -163.2
2.2 63.3 100.9 49.8 129.5 -52.0 -134.6 -40.7 -169.6
2.3 63.8 101.9 49.9 132.4 -52.2 -139.9 -40.8 -176.0
2.4 64.1 102.8 50.0 135.0 -52.3 -145.2 -40.9 -181.3
2.5 64.6 103.8 50.2 137.3 -52.5 -150.5 -41.0 -187.6
2.6 64.8 104.6 50.4 139.2 -52.7 -155.3 -41.1 -192.9
2.7 65.0 105.4 50.5 140.8 -52.8 -160.1 -41.2 -198.2
Rev. 0.4/May. 02 34
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OUTPUT DRIVE CHARACTERISTICS (FULL STRENGTH DRIVER )
0
20
40
60
80
100
120
140
160
00.511.522.5
Maxi mum
Nominal High
Nominal Low
Mini mum
Pull Down Characteristics
Iout (mA)
Vout to VSSQ (V)
-220
-200
-180
-160
-140
-120
-100
-80
-60
-40
-20
0
0 0.5 1 1.5 2 2.5
Maxi mum
Nominal High
Nominal Low
Mini mum
Pull Up Characteristics
Iout (mA)
VDDQ to Vout (V)
Rev. 0.4/May. 02 35
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OUTPUT DRIVE CHARACTERISTICS (HALF STRENGTH DRIVER)
Evaluation conditions:
Typical 25 oC (TAmbient), VDDQ=2.5V, typical process
Minimum 70 oC (TAmbient), VDDQ=2.3V, slow slow process
Maximum 0 oC (TAmbient), VDDQ=2.7V, fast fast process
Voltage
Pull Down Current (mA) Pull Up Current (mA)
Nominal
Low
Nominal
High Minimum Maximum Nominal
Low
Nominal
High Minimum Maximum
0.1 3.4 3.8 2.6 5.0 -3.5 -4.3 -2.6 -5.0
0.2 6.9 7.6 5.2 9.9 -6.9 -7.8 -5.2 -9.9
0.3 10.3 11.4 7.8 14.6 -10.3 -12.0 -7.8 -14.6
0.4 13.6 15.1 10.4 19.2 -13.6 -15.7 -10.4 -19.2
0.5 16.9 18.7 13.0 23.6 -16.9 -19.3 -13.0 -23.6
0.6 19.9 22.1 15.7 28.0 -19.4 -22.9 -15.7 -28.0
0.7 22.3 25.0 18.2 32.2 -21.5 -26.5 -18.2 -32.2
0.8 24.7 28.2 20.8 35.8 -23.3 -30.1 -20.4 -35.8
0.9 26.9 31.3 22.4 39.5 -24.8 -33.6 -21.6 -39.5
1.0 29.0 34.1 24.1 43.2 -26.0 -37.1 -21.9 -43.2
1.1 30.6 36.9 25.4 46.7 -27.1 -40.3 -22.1 -46.7
1.2 31.8 39.5 26.2 50.0 -27.8 -43.1 -22.2 -50.0
1.3 32.8 42.0 26.6 53.1 -28.3 -45.8 -22.3 -53.1
1.4 33.5 44.4 26.8 56.1 -28.6 -48.4 -22.4 -56.1
1.5 34.0 46.6 27.0 58.7 -28.7 -50.7 -22.6 -58.7
1.6 34.3 48.6 27.2 61.4 -28.9 -52.9 -22.7 -61.4
1.7 34.5 50.5 27.4 63.5 -28.9 -55.0 -22.7 -63.5
1.8 34.8 52.2 27.7 65.6 -29.0 -56.8 -22.8 -65.6
1.9 35.1 53.9 27.8 67.7 -29.2 -58.7 -22.9 -67.7
2.0 35.4 55.0 28.0 69.8 -29.2 -60.0 -22.9 -69.8
2.1 35.6 56.1 28.1 71.6 -29.3 -61.2 -23.0 -71.6
2.2 35.8 57.1 28.2 73.3 -29.5 -62.4 -23.0 -73.3
2.3 36.1 57.7 28.3 74.9 -29.5 -63.1 -23.1 -74.9
2.4 36.3 58.2 28.3 76.4 -29.6 -63.8 -23.2 -76.4
2.5 36.5 58.7 28.4 77.7 -29.7 -64.4 -23.2 -77.7
2.6 36.7 59.2 28.5 78.8 -29.8 -65.1 -23.3 -78.8
2.7 36.8 59.6 28.6 79.7 -29.9 -65.8 -23.3 -79.7
Rev. 0.4/May. 02 36
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HY5DU28822A(L)T
HY5DU281622A(L)T
OUTPUT DRIVE CHARACTERISTICS (HALF STRENGTH DRIVER)
0
20
40
60
80
100
00.511.522.5
Maxi mum
Nominal High
Nominal Low
Mini mum
Pull Down Characteristics
Iout (mA)
Vout to VSSQ (V)
-100
-80
-60
-40
-20
0
0 0.5 1 1.5 2 2.5
Maxi mum
Nominal High
Nominal Low
Mini mum
Pull Up Characteristics
Iout (mA)
VDDQ to Vout (V)
Rev. 0.4/May. 02 37
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PACKAGE INFORMATION
400mil 66pin Thin Small Outline Package
10.26 (0.404)
10.05 (0.396)
11.94 (0.470)
11.79 (0.462)
22.33 (0.879)
22.12 (0.871)
1.194 (0.0470)
0.991 (0.0390)
0.65 (0.0256) BSC 0.35 (0.0138)
0.25 (0.0098)
0.15 (0.0059)
0.05 (0.0020)
BASE PLANE
SEATING PLANE
0.597 (0.0235)
0.406 (0.0160)
0.210 (0.0083)
0.120 (0.0047)
0 ~ 5 Deg.
Unit : mm(Inch)
Note) Package do not include mold protrusion. Allowable protrusion of both sides is 0.4mm.
