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NXP Semiconductors
BFQ18A
NPN 4 GHz wideband transistor
Rev. 03 — 28 September 2007 Product data sheet
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ18A
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN DESCRIPTION
Code: FF
1 emitter
2 collector
3 base
Fig.1 SOT89.
321
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Tsis the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCBO collector-base voltage open emitter −25 V
VCEO collector-emitter voltage open base −18 V
ICDC collector current −150 mA
Ptot total power dissipation up to Ts = 155 °C (note 1) −1W
fTtransition frequency IC= 100 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C4−GHz
Cre feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz 1.2 −pF
dim intermodulation distortion IC= 80 mA; VCE = 10 V; RL=75Ω;
Vo= 700 mV; measured at
f(p+q-r) = 793.25 MHz
−−60 dB
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −25 V
VCEO collector-emitter voltage open base −18 V
VEBO emitter-base voltage open collector −2V
ICDC collector current −150 mA
Ptot total power dissipation up to Ts= 155 °C (note 1) −1W
Tstg storage temperature −65 150 °C
Tjjunction temperature −175 °C
Rev. 03 - 28 September 2007
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NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ18A
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Note
1. Ic= 80 mA; VCE = 10 V; RL=75Ω;
V
p=V
o= 700 mV; fp=795.25 MHz;
Vq=V
o−6 dB; fq= 803.25 MHz;
Vr=V
o−6 dB; fr= 805.25 MHz;
measured at f(p+q-r) = 793.25 MHz.
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to
soldering point up to Ts = 155 °C (note 1) 20 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
hFE DC current gain IC = 100 mA; VCE = 10 V 25 −
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −2pF
C
eemitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz −11 pF
Cre feedback capacitance IC = 0; VCE = 10 V; f = 10.7 MHz −1.2 pF
fTtransition frequency IC = 100 mA; VCE = 10 V; f = 500 MHz −4 GHz
dim intermodulation distortion (see Fig.2) note 1 −−60 dB
Rev. 03 - 28 September 2007
3 of 7
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ18A
Fig.2 Intermodulation distortion MATV test circuit.
f = 40 −860 MHz.
handbook, halfpage
MBB829
12 Ω
10 nF
0.68
pF
DUT
VCC
VBB
RL
1.5 nF
2.2 nF
5 µH
5 µH
200 Ω
10 kΩ L1
4.7 nF
2.2 nF
0.68 pF
10 nF
Fig.3 DC current gain as a function of collector
current.
VCE = 10 V; Tj=25°C.
handbook, halfpage
0
120
80
40
040 80 160
MBB361
120 I (mA)
C
FE
h
Fig.4 Transition frequency as a function of
collector current.
VCE = 10 V; f = 500 MHz; Tj=25°C.
handbook, halfpage
0 40 80 160
8
6
2
0
4
MBB357
120 I (mA)
C
(GHz)
T
f
Rev. 03 - 28 September 2007
4 of 7
NXP Semiconductors Product specification
NPN 4 GHz wideband transistor BFQ18A
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
DIMENSIONS (mm are the original dimensions)
SOT89 TO-243 SC-62 06-03-16
06-08-29
wM
e1
e
EHE
B
B
0 2 4 mm
scale
bp3
bp2
bp1
c
D
Lp
A
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.23
D
4.6
4.4
E
2.6
2.4
HELp
4.25
3.75
e
3.0
w
0.13
e1
1.5 1.2
0.8
bp2
bp1
0.53
0.40
bp3
1.8
1.4
Rev. 03 - 28 September 2007
5 of 7
NXP Semiconductors BFQ18A
NPN 4 GHz wideband transistor
Legal information
Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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NXP Semiconductors accepts no liability for inclusion and/or use of NXP
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Applications — Applications that are described herein for any of these
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
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Trademarks
Notice: All referenced brands, product names, service names and trademarks
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Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
Rev. 03 - 28 September 2007
6 of 7
NXP Semiconductors BFQ18A
NPN 4 GHz wideband transistor
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 September 2007
Document identifier: BFQ18A_N_3
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
Revision history
Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFQ18A_N_3 20070928 Product data sheet - BFQ18A_CNV_2
Modifications: •Fig. 1 and package outline updated
BFQ18A_CNV_2 19950901 Product specification - -
