DIL CMBD1204, CMBD1205, CMBD4148 SILICON PLANAR EPITAXIAL HIGH SPEED DIODES CMBD1201, 1202, CMBD4148 are all single diodes CMBI)1204 is a dual diode, common cathode CMBD1203 is a dual diode, in series CMBD1205 is a dual diode, common anode Marking PACKAGE OUTLINE DETAILS CMBD1i201--24 CMBD120427 ALL DIMENSIONS IN mm CMBD1202-25 CMBD1205~28 CMBD1203-26 CMBD41485H 3.0 0.48 . CMBD1201 cMBD4148 0.38 [0.05 113 0.70 1 po 0.50 cmep1202 | 2.6 iP 2.4 1.2 RO.1 | 2 ' (004) a 1 | all 0.05 cmepi203 | 1.02 | art 2) 0.89 0.02 0.60 2.00 a 7 0.40 1.80 . ompp1204 | cmap1205 | ABSOLUTE MAXIMUM RATINGS (per diode) Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage VRRM max. 100 V Repetitive peak forward current TeRM max. 500 mA Forward current Ip max. 215 mA Junction temperature Tj max. 150 C Forward voltage at Ip = 10 mA VE < 0.855 V 92DIL CMBD1204, CMBD1205, CMBD4148 Reverse recovery time when switched from Ip = 10 mA to Ip = 10 mA; Ry, = 100 9; measured at Ip = 1 mA ter < 4 ns RATINGS (per diode) (at Ta = 25C unless otherwise specified) Limiting values Continuous reverse voltage VR max. 75 V Repetitive peak reverse voltage VRRM max. 100 V Repetitive peak forward current IFRM max. 500 mA Forward current Ig max. 215 mA Non-repetitive peak forward current (per crystal) t=1 ps Igsm max. 4A t=1ms Ipsm max. 10 A t=1s IfsM max. 05 A Storage temperature Tstg -55 to +150 C Junction temperature Tj max. 150 C THERMAL RESISTANCE From junction to ambient Rth j-a = 500 K/W CHARACTERISTICS (per diode) Tj = 25 C unless otherwise specified Forward voltage Ip = 10 mA VE < 0.855 V Ip = 200 mA VF < 1.00 V Reverse currents VR =20V Ir < 25 nA VR=75V Ir < 5 pA VR = 25 V; T; = 150 C IR < 30 pA Forward recovery voltage Ip = 10 mA; tp = 20 ns Ver < 1.75 V Recovery charge Ip = 10 mA to Vp = 5V; RK = 1002 Qs < 45 pC Diode capacitance Vr = 0; f = 1 MHz Ca < 2 pF Reverse recovery time when switched from Ig = 10 mA to IR = 10 mA; Ry = 100 Q; measured at IR = 1 mA ter < 4 ns 93