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MRF19030LR3 MRF19030LSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement - Mode Lateral MOSFETs
Designed for class AB PCN and PCS base station applications with
frequencies from 1800 to 2000 MHz. Suitable for FM, TDMA, CDMA and
multicarrier amplifier applications.
•CDMA Performance @ 1990 MHz, 26 Volts
IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13
885 kHz — -47 dBc in 30 kHz BW
1.25 MHz — -55 dBc in 12.5 kHz BW
2.25 MHz — -55 dBc in 1 MHz BW
Output Power — 4.5 Watts Avg.
Power Gain — 13.5 dB
Efficiency — 17%
•Capable of Handling 10:1 VSWR, @ 26 Vdc, 1960 MHz, 30 Watts CW
Output Power
Features
•Internally Matched for Ease of Use
•High Gain, High Efficiency and High Linearity
•Integrated ESD Protection
•Designed for Maximum Gain and Insertion Phase Flatness
•Excellent Thermal Stability
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD83.3
0.48
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
Table 2. Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 2.1 °C/W
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M3 (Minimum)
Document Number: MRF19030
Rev. 12, 5/2006
Freescale Semiconductor
Technical Data
MRF19030LR3
MRF19030LSR3
1930 - 1990 MHz, 30 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E- 04, STYLE 1
NI- 400
MRF19030LR3
CASE 465F- 04, STYLE 1
NI- 400S
MRF19030LSR3
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
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RF Device Data
Freescale Semiconductor
MRF19030LR3 MRF19030LSR3
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Drain- Source Breakdown Voltage
(VGS = 0 Vdc, ID = 20 µA)
V(BR)DSS 65 — — Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th) 2 3 4 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 300 mA)
VGS(Q) 2 3.3 4.5 Vdc
Drain- Source On- Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on) — 0.29 0.4 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 1 Adc)
gfs — 2 — S
Dynamic Characteristics
Input Capacitance (Including Input Matching Capacitor in Package) (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss — 98.5 — pF
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss — 37 — pF
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss — 1.3 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system)
Two- Tone Common -Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
Gps — 13 — dB
Two- Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
η— 36 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IMD — -31 — dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA,
f1 = 1960.0 MHz, f2 = 1960.1 MHz)
IRL — -13 — dB
Two- Tone Common -Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
Gps 12 13 — dB
Two- Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
η33 36 — %
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IMD — -31 -28 dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz,
f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz)
IRL — -13 -9 dB
1. Part is internally matched both on input and output.
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MRF19030LR3 MRF19030LSR3
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RF Device Data
Freescale Semiconductor
Figure 1. MRF19030LR3(SR3) Test Circuit Schematic
B1 - B5 Short Ferrite Beads
C1, C7 10 pF Chip Capacitors
C2, C8 470 µF, 35 V Electrolytic Capacitors
C3, C5 0.1 µF Chip Capacitors
C4, C6 5.1 pF Chip Capacitors
C9 22 µF Tantalum Chip Capacitor
C10 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
L1 - L4 12.5 nH Inductors
R1 - R7 12 Ω Chip Resistors (0805)
Z1 0.080″ x 0.595″ Microstrip
Z2 0.080″ x 0.600″ Microstrip
Z3 0.080″ x 0.480″ Microstrip
Z4 0.325″ x 0.280″ Microstrip
Z5 0.510″ x 0.200″ Microstrip
Z6 0.510″ x 0.200″ Microstrip
Z7 0.325″ x 0.280″ Microstrip
Z8 0.080″ x 0.480″ Microstrip
Z9 0.080″ x 0.530″ Microstrip
Z10 0.080″ x 0.671″ Microstrip
Substrate 0.030″ x 3.00″ x 5.00″ Glass Teflon,
Arlon
RF
INPUT
RF
OUTPUT
Z1 Z2
VBIAS
C1
C7
C2
+
L2
DUT
VSUPPLY
C6
Z9 Z10
L1
Z3
C8
+
C5
Z7 Z8
Z6
C3
B1
R1
B2
R2 C4
Z4
Z5
C9
L3
B3
R5
B4
R6
B5
R7
L4
+
R3
R4
C10
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RF Device Data
Freescale Semiconductor
MRF19030LR3 MRF19030LSR3
Figure 2. MRF19030LR3(SR3) Test Circuit Component Layout
R2
B3
C2 C8
C10
C4
L4
L2
B2
B4
R6
B5
R7
C1 C7
R5
C5
C6
C9
L3
L1
R1
B1
R3
C3
R4
MRF19030
Rev. 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)
ADJACENT CHANNEL POWER RATION (dB)
Figure 3. Class AB Broadband Circuit Performance
f, FREQUENCY (MHz)
01940
Figure 4. CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
5
Pout, OUTPUT POWER (WATTS Avg.) CDMA
45
20
1920 2000
35
41900 −35
Figure 5. Intermodulation Distortion
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
−55
Figure 6. Intermodulation Distortion Products
versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEP
100
1.0 1.0
13
15
VDD = 26 Vdc
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
50
−45
−35
−15
−3010
20
10
12
1960 1980 810
100
101.0
11
2020
100
30
40
−10
−25
−20
η
IRL
IMD 10
30
40
3rd Order
5th Order
−25
−50
−40
−30
−80
−20
−50
−70
−60
−40
−30
14
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
, DRAIN EFFICIENCY (%), ηGps , POWER GAIN (dB)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
VDD, DRAIN VOLTAGE (VOLTS)
3424
13
14
IMD, INTERMODULATION DISTORTION (dBc)
2820
12.5
12
13.5
15
25
−100
−30
−50
−80
−90
−20
−40
−70
−60
12
885 kHz
2.25 MHz
1.25 MHz
VDD = 26 Vdc
IDQ = 350 mA, f = 1960 MHz, Channel Spacing
(Channel Bandwidth): 885 kHz (30 kHz),
1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz)
CDMA 9 Channels Forward
PILOT:0, PAGING:1, TRAFFIC:8−13, SYNC:32
IMD, INTERMODULATION DISTORTION (dBc)
10
200 mA
300 mA
400 mA
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
Gps , POWER GAIN (dB)
VDD = 26 Vdc, f = 1960 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
Gps , POWER GAIN (dB)
−38
−24
−28
−34
−36
−22
−26
−32
−30
26 30
f = 1960 MHz
IDQ = 300 mA, Pout = 30 W (PEP)
Two−Tone Measurement, 100 kHz Tone Spacing
Gps
η
Gps
Gps
IMD
02 6
350 mA
300 mA
200 mA
300 mA
400 mA
350 mA
300 mA
22 32
7th Order
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RF Device Data
Freescale Semiconductor
MRF19030LR3 MRF19030LSR3
f
MHz
Zsource
Ω
Zload
Ω
1930
1960
1990
10.57 - j7.69
10.47 - j7.21
10.54 - j7.43
5.81 - j5.01
5.84 - j4.67
5.84 - j4.35
VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP
Figure 9. Series Equivalent Source and Load Impedance
f = 1990 MHz
Zo = 25 Ω
f = 1930 MHz
f = 1990 MHz
f = 1930 MHz
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
Zsource
Zload
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MRF19030LR3 MRF19030LSR3
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RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465E- 04
ISSUE F
NI-400
MRF19030LR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION H IS MEASURED 0.030 (0.762)
AWAY FROM PACKAGE BODY.
4. INFORMATION ONLY: CORNER BREAK (4X) TO
BE .060±.005 (1.52±0.13) RADIUS OR .06±.005
(1.52±0.13) x 45° CHAMFER.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
2X D
N (LID)
E
R (LID)
F
2X K
A
T
C
M
B
M
bbb A M
T
H
B
B
G
A
M
A
M
ccc B M
T
M
A
M
bbb B M
T
1
2
3
2X Q
M
(INSULATOR)
S
(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
M
A
M
aaa B M
T
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.795 .805 20.19 20.44
INCHES
B.380 .390 9.65 9.9
C.125 .163 3.17 4.14
D.275 .285 6.98 7.24
E.035 .045 0.89 1.14
F.004 .006 0.10 0.15
G
H.057 .067 1.45 1.7
K.092 .122 2.33 3.1
M.395 .405 10 10.3
N.395 .405 10 10.3
Q.120 .130 3.05 3.3
R.395 .405 10 10.3
S.395 .405 10 10.3
aaa
bbb
ccc
.600 BSC 15.24 BSC
.005 BSC 0.127 BSC
.010 BSC 0.254 BSC
.015 BSC 0.381 BSC
SEE NOTE 4
CASE 465F- 04
ISSUE E
NI-400S
MRF19030LSR3
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
EF
2X K
M
A
M
bbb B M
T
AT
C
H
B
A
DIM
A
MIN MAX MIN MAX
MILLIMETERS
.395 .405 10.03 10.29
INCHES
B.395 .405 10.03 10.29
C.125 .163 3.18 4.14
D.275 .285 6.98 7.24
E.035 .045 0.89 1.14
F.004 .006 0.10 0.15
H.057 .067 1.45 1.70
K.092 .122 2.34 3.10
M.395 .405 10.03 10.29
S.395 .405 10.03 10.29
aaa .005 REF 0.127 REF
2X D
M
A
M
ccc B M
T
bbb .010 REF 0.254 REF
ccc .015 REF 0.38 REF
N.395 .405 10.03 10.29
R.395 .405 10.03 10.29
M
A
M
ccc B M
T
M
A
M
aaa B M
T
N(LID)
M(INSULATOR)
(FLANGE)
3
B
(FLANGE)
R(LID)
S(INSULATOR)
M
A
M
aaa B M
T
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RF Device Data
Freescale Semiconductor
MRF19030LR3 MRF19030LSR3
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Document Number: MRF19030
Rev. 12, 5/2006
