TLP731,TLP732
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TOSHIB A P hot ocoupler GaAs Ired & Photo-Transistor
TLP731, TLP732
Office Machine
Househol d Use Equipmen t
Solid State Relay
Switching Power Supply
The TOSHIBA TLP731 and T LP 732 con sist of a photo-transistor
optically coupled to a gallium arsenide infrared emitting diode in a six
lead plastic DIP pac ka ge.
TLP732 is no-base internal connection for high-EMI environments.
• Collector-emitter volt age: 55V ( min)
• Current transfer ratio: 50% (min)
Rank GB: 100% (min)
• UL recognized: UL1577, file No. E67349
• Isolation voltage: 4000 Vrms (min)
• c-UL recognized: CSA Component Acceptance Service No. 5A
File No.E67349
• Option (D4) ty pe
VDE approved: EN 60747-5-5,
Certificate No. 40009302
Maximum operating insul atio n v oltage: 630VPK
Highest permissible over voltage: 6000VPK
Note: When a EN 60747-5-5 approved type is needed,
please designate the “Option (D4)”
• Creepage distance : 7.0mm (min)
Clearance : 7.0 mm (min)
Insulation thickness : 0.5 mm (min)
Pin Configurations (top view)
Unit:
mm
TOSHIBA
11-7A8
Weight : 0.35 g (typ.)
Start of commercial production
1985-02
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Current Transfer Ratio
Classification
(Note 1)
Current Transf er Ratio (%)
(IC / IF)
Marking Of Classification
IF = 5 mA, VCE = 5 V, Ta = 25°C
Min Max
Blank 50 600 Blank, Y■, YE, G , G ■, GR, B, BL, GB
Rank Y 50 150 YE, Y■
Rank GR 100 300 GR, G, G■
Rank BL 200 600 BL, B
Rank GB 100 600 GB, GR, G, G■, BL, B,
Note: The product with the Rank Y and BL are limited in production.
For details, please contact your nearest Toshiba sales representative.
Note 1: Ex. rank GB: TLP731 (GB)
Note: Application type name for certification test,
please use standard product type name, i.e.
TLP731(GB): TLP731
TLP732(GB): TLP732
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
LED
Forward current IF 60 mA
Forward current derati ng (Ta ≥ 39°C) ΔIF / °C -0.7 mA / °C
Peak forward current (100μs pulse, 100pps) IFP 1 A
Power dissipation PD 70 mW
Power dissipation derat i ng (Ta ≥ 39°C) ΔPD / °C -0.82 mW / °C
Reverse voltage VR 5 V
Junction temperature Tj 125 °C
Detector
Collector-emitt er voltage VCEO 55 V
Collector-base voltage (TLP731) VCBO 80 V
Emitter-collector voltage VECO 7 V
Emitter-base voltage (TLP731) VEBO 7 V
Collector current IC 50 mA
Power dissipation PC 150 mW
Power dissipation derat i ng (Ta ≥ 25°C) ΔPC / °C -1.5 mW / °C
Junction temperature Tj 125 °C
Storage temperature range Tstg -55 to 125 °C
Operating tem perature range Topr -55 to 100 °C
Lead soldering temperat ure (10 s) Tsol 260 °C
Total package power dissi pation PT 250 mW
Total package power dissi pation derating (Ta ≥ 25°C) ΔPT / °C -2.5 mW / °C
Isolation voltage (AC, 60 s, R.H. ≤ 60%) (Note 1) BVS 4000 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted
together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating tem perature Topr -25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage VF IF = 1 0mA 1.0 1.15 1.3 V
Reverse current IR VR = 5V ― ― 10 μA
Capacitance CT V = 0 V, f = 1MHz ― 30 ― pF
Detector
Collector-emitter
breakdown voltage V(BR)CEO IC = 0.5mA 55 ― ― V
Emitter-collector
breakdown voltage V(BR)ECO IE = 0.1mA 7 ― ― V
Collector-base
breakdown voltage (TLP731) V(BR)CBO IC = 0.1mA 80 ― ― V
Emitter-base
breakdown voltage (TLP731) V(BR)EBO IE = 0. 1mA 7 ― ― V
Collector dark current ICEO VCE = 24V ― 10 100 nA
VCE = 24V, Ta = 85°C ― 2 50 μA
Collector dark current
(TLP731) ICER VCE = 24V, Ta = 85°C
RBE = 1MΩ ― 0.5 10 μA
Collector dark current
(TLP731) ICBO VCB = 10V ― 0.1 ― nA
DC forward current gain
(TLP731) hFE VCE = 5V, IC = 0.5m A ― 400 ― ―
Capacitance collector to emitter CCE V = 0 V, f = 1MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Conditi on Min Typ. Max Unit
Current transf er ratio IC / IF IF = 5m A, VCE = 5V Rank GB
50 ― 600 %
100 ― 600
Saturated CTR IC / IF (sat) IF = 1mA, VCE = 0.4V Rank GB
― 60 ― %
30 ― ―
Base photo-current (TLP731)
IPB IF = 5mA, VCB = 5V ― 10 ― μA
Collector-emitter saturation voltage VCE (sat)
IC = 2.4mA, IF = 8mA ― ― 0.4
V
IC = 0.2mA, IF = 1mA Rank GB
― 0.2 ―
― ― 0.4
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Isolation Characteristics (Ta = 25° C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance (input to output) CS VS = 0 V, f = 1MHz ― 0.8 ― pF
Isolation resist ance RS VS = 500V, R.H.≤60% 1×1012 1014 ― Ω
Isolation voltage BVS
AC, 60 s 4000 ― ― Vrms
AC, 1 s, in oil ― 10000 ―
DC, 60 s, in oi l ― 10000 ― Vdc
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Rise time tr
VCC = 1 0V, IC = 2mA
RL = 100Ω
― 2 ―
μs
Fall time tf ― 3 ―
Turn-on time ton ― 3 10
Turn-off time toff ― 3 10
Turn-on time tON RL = 1.9kΩ (Fig.1)
RBE = open
VCC = 5V, I F = 16mA
― 2 ―
μs
Storage time ts ― 15 ―
Turn-off time tOFF ― 25 ―
Turn-on time tON RL = 1.9kΩ (Fig.1)
RBE = 220kΩ (TLP731)
VCC = 5V, I F = 16m A
― 2 ―
μs
Storage time ts ― 12 ―
Turn-off time tOFF ― 20 ―
Fig. 1 Switching time test circuit
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≤
≤
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RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collect i vel y "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, soft ware and systems (coll ect i vel y "Product" ) without not ice.
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TOSHIBA's written permission, reproduct i on is permiss i bl e only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product's qual ity and reliabil i t y, Product can malfunction or fail. Customers are
responsibl e for complyi ng with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimi ze risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product int o their own applicati ons, cust om ers must also ref er to and comply with (a) the latest versions of all
relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for
Product and the precautions and conditions set forth in the " T OSH IBA Semiconductor Reliability Handbook" and (b) the instructions for
the applicati on with which the Product will be used with or for. Customers are solely respons i ble for all aspects of thei r own product
design or applications, i ncludi ng but not limit ed to (a) determini ng the appropriatenes s of the use of this Product in such design or
applicat i ons; (b) evaluati ng and determi ni ng the applic abi l ity of any information contained in this document, or in charts, diagrams,
programs, al gorithms, s ample applic ation circuits, or any other referenced documents; and (c) validating all operat i ng parameters f or
such designs and applications. TOSHIB A ASSUM E S NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS.
• PRODUCT IS NEI THE R INTENDE D NO R WARR ANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTI ON O R FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIO US PROPERTY DAMAGE AND/OR SE RIO US PUBL IC IMPACT
("UNINTENDED USE"). E xcept for s peci f ic applications as expressly stated in this document, Unintended Use includes, without
limitati on, equipm ent used in nucl ear fac ilities, equipment used in the aerospace industry, m edic al equipment, equipm ent us ed for
automobiles, trains, ships and other transport ation, traffic si gnal ing equipment, equipment used to control combustions or explosions,
safety devices, elevators and escalators , devic es rel ated to electric power, and equipment used in finance-rel ated fields. IF YOU USE
PRODUCT FOR UNINTE NDE D USE, TOSHI BA ASSUMES NO LIABILI TY FOR PRODUCT. For details, please contact your
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SALE, USE OF PRODUCT, OR INFORMATION, INCL UDI NG WARRANTIES O R CONDITIONS OF MERCH ANTABILITY, F ITNESS
FOR A PARTICULAR PURPOS E, ACCURACY OF INF O RMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or ab sorbed, w hether in the form o f dust or vapor.
Handle with care and do not break, cut, crush, grind, dissol ve chemicall y or ot herwise expose GaAs i n Product.
• Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation,
for the design, development, use, stock pili ng or manufact uri ng of nuclear, chemical, or bi ol ogical weapons or miss ile t echnol ogy
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compliance with al l applicabl e export laws and regulati ons.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compati bi lit y of Product.
Please use Product in compliance with all appli c able laws and regulations t hat regulate the inclusion or use of controlled substances,
including without limi t ati on, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICAB LE LAWS AND REGULAT IONS.
