ZXMP6A13FQTA - Diodes Incorporated

ZXMP6A13FQ

Document Number DS36684 Rev. 2 - 2

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ZXMP6A13FQ

60V P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

V(BR)DSS Max RDS(on) Max ID

= +25°C

-60V 400mΩ @ VGS = -10V -1.1A

600mΩ @ VGS = -4.5V -0.9A

Description

This MOSFET utilizes a unique structure that combines the benefits

of low on-resistance with fast switching speed, making it ideal for

high-efficiency power management applications.

Applications

 DC - DC converters

 Power management functions

 Relay and solenoid driving

 Motor control

Features

 Fast switching speed

 Low input capacitance

 Low gate charge

 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Available

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, UL Flammability Classification

Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish – Matte Tin Plated Leads, Solderable per

MIL-STD-202, Method 208

 Weight: 0.008 grams (approximate)

Ordering Information (Notes 4 & 5)

Product Compliance Case Quantity per reel

ZXMP6A13FQTA Automotive SOT23 3,000 Units

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally

the same, except where specified.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Top View Equivalent Circuit

7P6 = Product Type Marking Code

Top View

Pin Out

7P6

SOT23

ZXMP6A13FQ

Document Number DS36684 Rev. 2 - 2

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ZXMP6A13FQ

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage VDSS -60 V

Gate-Source Voltage VGS ±20 V

Continuous Drain Current VGS = 10V

(Note 7)

TA = +70°C (Note 7)

(Note 6)

-1.1

-0.8

-0.9

Pulsed Drain Current (Note 8) IDM -4.0 A

Continuous Source Current (Body Diode) (Note 7) IS -1.2 A

Pulsed Source Current (Body Diode) (Note 8) ISM -4.0 A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Power Dissipation (Note 6)

Linear Derating Factor PD 625

mW/°C

Power Dissipation (Note 7)

Linear Derating Factor PD 806

6.5

mW/°C

Thermal Resistance, Junction to Ambient (Note 6) RθJA 200 °C/W

Thermal Resistance, Junction to Ambient (Note 7) RθJA 155 °C/W

Thermal Resistance, Junction to Leads (Note 9) RθJL 194 °C/W

Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Notes: 6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

7. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.

8. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05 pulse width = 10μs - pulse current limited by maximum junction temperature.

9. Thermal resistance from junction to solder-point (at the end of the collector lead).

ZXMP6A13FQ

Document Number DS36684 Rev. 2 - 2

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ZXMP6A13FQ

Thermal Characteristics

110100

10m

100m

Single Pulse

Tamb=25°C

RDS(on)

Limited

100µs

1ms

10ms

100ms

Safe Operating Area

-ID Drain Current (A)

-VDS Drain-Source Voltage (V)

0 20 40 60 80 100 120 140 160

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

Derating Curve

Temperature (°C)

Max Power Dissipation (W)

100µ 1m 10m 100m 1 10 100 1k

100

150

200 Tamb=25°C

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal Resistance (°C/W)

Pulse Width (s)

100µ 1m 10m 100m 1 10 100 1k

Single Pulse

Tamb=25°C

Pulse Power Dissipation

Pulse Width (s)

Maximum Power (W)

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage BVDSS -60   V ID = -250μA, VGS = 0V

Zero Gate Voltage Drain Current IDSS   -0.5 μA VDS = -60V, VGS = 0V

Gate-Source Leakage IGSS   ±100 nA

VGS = 20V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage VGS

(

)

-1.0  -3.0 V

ID = -250μA, VDS = VGS

Static Drain-Source On-Resistance (Note 10) RDS (ON)   0.4 Ω VGS = -10V, ID = -0.9A

0.6 VGS = -4.5V, ID = -0.8A

Forward Transconductance (Notes 10 and 12) gfs  1.8  S VDS = -15V, ID = -0.9A

Diode Forward Voltage (Note 10) VSD  -0.85 -0.95 V

TJ = +25°C, IS = -0.8A, VGS = 0V

Reverse Recovery Time (Note 12) tr

 21.1  ns TJ = +25°C, IF = -0.9A,

di/dt = 100A/μs

Reverse Recovery Charge (Note 12) Qr

 19.3  nC

DYNAMIC CHARACTERISTICS (Note 12)

Input Capacitance Ciss  219 

pF VDS = -30V, VGS = 0V

f = 1.0MHz

Output Capacitance Coss  25.7 

Reverse Transfer Capacitance Crss  20.5 

Turn-On Delay Time (Note 11) tD

(

)

 1.6 

ns VDD = -30V, ID = -1A,

RG  6.0Ω VGS = -10V

Turn-On Rise Time (Note 11) t

 2.2 

Turn-Off Delay Time (Note 11) tD

(

off

)

 11.2 

Turn-Off Fall Time (Note 11) tf  5.7 

Total Gate Charge (Note 11) Qg  2.9  nC VDS = -30V, VGS = -4.5V,

ID = -0.9A

Total Gate Charge (Note 11) Q

 5.9 

nC VDS = -30V, VGS = -10V,

ID = -0.9A

Gate-Source Charge (Note 11) Q

s  0.74 

Gate-Drain Charge (Note 11) Q

d  1.5 

Notes: 10. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.

11. Switching characteristics are independent of operating junction temperature.

12. For design aid only, not subject to production testing

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Typical Characteristics

0.1 1 10

0.1

0.1 1 10

0.01

0.1

12345

0.1

-50 0 50 100 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

0.1 1 10

0.4 0.6 0.8 1.0 1.2 1.4

0.01

0.1

10V

4.5V

3.5V

-VGS

2.5V

Output Characteristics

T = 25°C

-VGS

-ID Drain Current (A)

-VDS Drain-Source Voltage (V)

5V 4.5V

3.5V

1.5V

10V

2.5V

Output Characteristics

T = 150°C

-ID Drain Current (A)

-VDS Drain-Source Voltage (V)

Typical Transfer Characteristics

-VDS = 10V

T = 25°C

T = 150°C

-ID Drain Current (A)

-VGS Gate-Source Voltage (V)

Normalised Curves v Temperature

RDS(on)

VGS = -10V

ID = -0.9A

VGS(th)

VGS = VDS

ID = -250uA

Normalised RDS(on) and VGS(th)

Tj Junction Temperature (°C)

1.5V

10V

3.5V

2.5V

On-Resistance v Drain Current

T = 25°C

-VGS

RDS(on) Drain-Source On-Resistance 

-ID Drain Current (A)

T = 150°C

T = 25°C

Source-Drain Diode Forward Voltage

-VSD Source-Drain Voltage (V)

-ISD Reverse Drain Current (A)

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Typical Characteristics - continued

0.1 1 10

100

200

300

CRSS

COSS

CISS

VGS = 0V

f = 1MHz

C Capacitance (pF)

-VDS - Drain - Source Voltage (V)

0123456

VDS = -30V

ID = -0.9A

Gate-Source Voltage v Gate Charge

Capacitance v Drain-Source Voltage

Q - Charge (nC)

-VGS Gate-Source Voltage (V)

Test Circuits

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ZXMP6A13FQ

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

SOT23

Dim Min Max Typ

A 0.37 0.51 0.40

B 1.20 1.40 1.30

C 2.30 2.50 2.40

D 0.89 1.03 0.915

F 0.45 0.60 0.535

G 1.78 2.05 1.83

H 2.80 3.00 2.90

J 0.013 0.10 0.05

K 0.890 1.00 0.975

K1 0.903 1.10 1.025

L 0.45 0.61 0.55

L1 0.25 0.55 0.40

M 0.085 0.150 0.110



8°

All Dimensions in mm

Dimensions Value (in mm)

Z 2.9

X 0.8

Y 0.9

C 2.0

E 1.35

K1K

All 7°

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

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failure of the life support device or to affect its safety or effectiveness.

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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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