Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -40V
▼ Fast Switching Characteristic RDS(ON) 38mΩ
▼ RoHS Compliant ID-6.5A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Thermal Resistance Junction-ambient3Max. 50 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Total Power Dissipation 2.5
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.02
Storage Temperature Range
Continuous Drain Current3-5.2
Pulsed Drain Current1-30
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Pb Free Plating Product
200503061-1/4
AP9565GEM
Rating
-40
±16
-6.5
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -40 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA - -0.02 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-6A - - 38 mΩ
VGS=-4.5V, ID=-4A - - 48 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -0.8 - -2.5 V
gfs Forward Transconductance VDS=-10V, ID=-6A - 6 - S
IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA
Drain-Source Leakage Current (Tj=70oC) VDS=-32V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=± 16V - - ±30 uA
QgTotal Gate Charge2ID=-6A - 12.8 20 nC
Qgs Gate-Source Charge VDS=-30V - 2.1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6.3 - nC
td(on) Turn-on Delay Time2VDS=-20V - 8.9 - ns
trRise Time ID=-1A - 6 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26.9 - ns
tfFall Time RD=20Ω- 36.9 - ns
Ciss Input Capacitance VGS=0V - 980 1570 pF
Coss Output Capacitance VDS=-25V - 160 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
RgGate Resistance f=1.0MHz - 6 9 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-1.9A, VGS=0V - - -1.3 V
trr Reverse Recovery Time IS=-6A, VGS=0V, - 25 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 19 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 ℃/W when mounted on Min. copper pad.
2/4
AP9565GEM
AP9565GEM
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. On-Resistance vs.
Reverse Diode Drain Current
3/4
0
10
20
30
0246810
-V DS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=150 oC -10V
-7.0V
-5.0V
-4.5V
VG= -3.0V
20
40
60
80
100
120
246810
-V GS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=-4A
TA=25 oC
0.6
1.0
1.4
1.8
25 50 75 100 125 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-6A
VG= -10V
0
10
20
30
02468
-V DS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25 oC
-10V
-7.0V
-5.0V
-4.5V
VG= -3.0V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCT j=150 oC
20.0
30.0
40.0
50.0
60.0
010203040
-I D , Drain Current (A)
RDS(ON) (mΩ)
VGS = -4.5V
VGS = -10V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4
AP9565GEM
0
4
8
12
16
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
ID= -6A
VDS = -30V
10
100
1000
10000
1 5 9 1317212529
-V DS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
Ciss
Coss
Crss
Q
VG
-4.5V
QGS QGD
QG
Charge
0.01
0.1
1
10
100
0.1 1 10 100
-V DS , Drain-to-Source Voltage (V)
-ID (A)
100us
1ms
10ms
100ms
1s
DC
TA=25 oC
Single Pulse
0
10
20
30
40
0246
-V GS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150 oCT j=25 oC
VDS = -5V
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Thermal Response (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
