AP9565GEM Pb Free Plating Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Fast Switching Characteristic D D D RoHS Compliant S SO-8 S S BVDSS -40V RDS(ON) 38m ID -6.5A G D Description G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=70 Rating Units -40 V 16 V 3 -6.5 A 3 -5.2 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -30 A PD@TA=25 Total Power Dissipation 2.5 W Linear Derating Factor 0.02 W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient Data and specifications subject to change without notice 3 Max. Value Unit 50 /W 200503061-1/4 AP9565GEM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -40 - - V - -0.02 - V/ VGS=-10V, ID=-6A - - 38 m VGS=-4.5V, ID=-4A - - 48 m -0.8 - -2.5 V BVDSS Drain-Source Breakdown Voltage BVDSS/Tj Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) Static Drain-Source On-Resistance VGS=0V, ID=-250uA 2 Max. Units Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-6A - 6 - S IDSS Drain-Source Leakage Current (Tj=25oC) VDS=-40V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70 C) VDS=-32V, VGS=0V - - -25 uA Gate-Source Leakage VGS= 16V - - 30 uA ID=-6A - 12.8 20 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-30V - 2.1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6.3 - nC VDS=-20V - 8.9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3,VGS=-10V - 26.9 - ns tf Fall Time RD=20 - 36.9 - ns Ciss Input Capacitance VGS=0V - 980 1570 pF Coss Output Capacitance VDS=-25V - 160 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 6 9 Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-1.9A, VGS=0V - - -1.3 V trr Reverse Recovery Time IS=-6A, VGS=0V, - 25 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 19 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 125 /W when mounted on Min. copper pad. 2/4 AP9565GEM 30 -10V -7.0V T A =25 o C -5.0V -4.5V V G = -3.0V 20 T A =150 o C -ID , Drain Current (A) -ID , Drain Current (A) 30 10 20 10 0 0 0 2 4 6 0 8 2 4 6 8 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.8 I D =-6A V G = -10V I D =-4A 100 o T A =25 C Normalized RDS(ON) RDS(ON) (m) -10V -7.0V -5.0V -4.5V V G = -3.0V 80 60 1.4 1.0 40 20 0.6 2 4 6 8 10 25 Fig 3. On-Resistance v.s. Gate Voltage 75 100 125 150 Fig 4. Normalized On-Resistance v.s. Junction Temperature 60.0 8 6 50.0 T j =25 o C RDS(ON) (m) T j =150 o C -IS(A) 50 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) 4 V GS = -4.5V 40.0 V GS = -10V 2 30.0 0 20.0 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 0 10 20 30 40 -I D , Drain Current (A) Fig 6. On-Resistance vs. Drain Current 3/4 AP9565GEM f=1.0MH 10000 12 I D = -6A V DS = -30V 1000 C iss 100 C oss C rss C (pF) -VGS , Gate to Source Voltage (V) 16 8 4 0 10 0 5 10 15 20 25 30 1 5 Q G , Total Gate Charge (nC) 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthjc) 100 100us 10 1ms -ID (A) 9 10ms 1 100ms 1s T A =25 o C Single Pulse 0.1 DC Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t T 0.02 Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Rthja=125 oC/W Single Pulse 0.01 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 V DS = -5V VG -ID , Drain Current (A) 30 T j =25 o C QG T j =150 o C -4.5V QGS 20 QGD 10 Charge Q 0 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4