2SA1252 / 2SC3134 Ordering number : EN1048D SANYO Semiconductors DATA SHEET 2SA1252 / 2SC3134 PNP / NPN Epitaxial Planar Silicon Transistors High VEBO, AF Amp Applications Features * * High VEBO. Wide ASO and high durability against breakdown. Specifications ( ) : 2SA1252 Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)15 V IC (--)150 mA Collector Current (Pulse) ICP (--)300 mA Collector Dissipation PC 200 mW Collector Current Junction Temperature Tj Storage Temperature Tstg 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Conditions Ratings min typ VCB=(--)40V, IE=0A VEB=(--)10V, IC=0A VCE=(--)6V, IC=(--)1mA VCE=(--)6V, IC=(--)1mA VCB=(--)6V, f=1MHz IC=(--)50mA, IB=(--)5mA IC=(--)10A, IE=0A IC=(--)1mA, RBE= IE=(--)10A, IC=0A 90* max Unit (--)0.1 A (--)0.1 A 600* 100 MHz (3.5)2.2 pF (--)0.5 (--)60 V V (--)50 V (--)15 V Marking: 2SA1252:D 2SC3134: H * : The 2SA1252 / 2SC3134 are classified by 1mA hFE as follws: Rank 4 5 6 hFE 90 to 180 135 to 270 200 to 400 7 300 to 600 Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 31006CA MS IM 8-4698 / 70502TN (KT) / 71598HA (KT) / 3187AT / 3155MW, TS No.1048-1/4 2SA1252 / 2SC3134 Package Dimensions unit : mm 7013A-009 0.1 1.5 3 1 2 0.95 1 : Base 2 : Emitter 3 : Collector SANYO : CP 0.3 1.1 0.4 0.05 0.5 --40 --30 50 A --250 --200A --150A --100A --20 --50A --10 0 0 --20 Collector Current, IC -- mA IC -- VCE 2SA1252 From top --500A --450A --400A --350A --300A --16 --12 --8 --4 0 0 IB=0A --0.2 --0.4 --0.6 --0.8 --1.0 Collector-to-Emitter Voltage, VCE -- V ITR03076 --30 A --20 A --10A IB=0A --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V --50 ITR03078 A 250 A 0 20 A 150 100A 20 50A 10 20 2SA1252 A 0 --4 30 IC -- VCE 2SC3134 From top 500A 450A 400A 350A 300A IB=0A 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, VCE -- V IC -- VCE A 0 --7 A 0 --6 A 0 --5 40 0 0 Collector Current, IC -- mA Collector Current, IC -- mA --50 Collector Current, IC -- mA 2.5 0.5 2.9 16 ITR03077 IC -- VCE 70A 2SC3134 60A 50A 40A 12 30A 8 20A 4 0 0 10A IB=0A 10 20 30 40 50 Collector-to-Emitter Voltage, VCE -- V ITR03079 No.1048-2/4 2SA1252 / 2SC3134 IC -- VBE 2SA1252 VCE= --6V Pulse --80 --60 --40 --20 0 0 --0.4 --0.8 --1.2 Base-to-Emitter Voltage, VBE -- V 20 7 2 100 7 3 3 2 0.1 2 --100 2 1.0 3 2 100 7 5 3 2 5 2 10 5 Collector Current, IC -- mA Gain-Bandwidth Product, f T -- MHz 5 5 10 2 100 ITR03083 f T -- IC 1000 2SA1252 VCE= --6V Pulse 7 2 ITR03082 f T -- IC 1000 2SC3134 VCE=6V Pulse 3 5 5 1.6 ITR03081 hFE -- IC 5 5 --1.0 2 --10 2 Collector Current, IC -- mA 1.2 5 100 5 0.8 7 2 2 0.4 Base-to-Emitter Voltage, VBE -- V 2 Gain-Bandwidth Product, f T -- MHz 40 1000 3 --0.1 2SC3134 VCE=6V Pulse 7 5 3 2 100 7 5 3 2 10 7 --1.0 2 3 2 3 5 --10 Collector Current, IC -- mA 5 7 7 7 2 --100 7 5 3 2 5 7 2 10 3 5 7 100 2 ITR03085 Cob -- VCB 3 2SC3134 f=1MHz 2 Output Capacitance, Cob -- pF 10 3 Collector Current, IC -- mA 2SA1252 f=1MHz 2 2 0.1 ITR03084 Cob -- VCB 3 Output Capacitance, Cob -- pF 60 0 DC Current Gain, hFE DC Current Gain, hFE 5 80 ITR03080 2SA1252 VCE= --6V Pulse 7 2SC3134 VCE=6V Pulse 0 --1.6 hFE -- IC 1000 IC -- VBE 100 Collector Current, IC -- mA Collector Current, IC -- mA --100 10 7 5 3 2 1.0 1.0 5 7 --1.0 2 3 5 7 2 3 --10 Collector-to-Base Voltage, VCB -- V 5 7 --100 ITR03086 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 ITR03087 No.1048-3/4 2SA1252 / 2SC3134 VCE(sat) -- IC 3 2SA1252 IC / IB=10 2SC3134 IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V VCE(sat) -- IC 3 --1.0 7 5 3 2 --0.1 7 1.0 7 5 3 2 0.1 7 5 5 3 --1.0 2 3 5 7 2 3 5 --10 Collector Current, IC -- mA 7 2 --100 ITR03088 PC -- Ta 240 3 1.0 2 3 5 7 10 2 3 5 Collector Current, IC -- mA 7 2 100 ITR03089 Collector Dissipation, PC -- mW 2SA1252 / 2SC3134 200 160 120 80 40 0 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 ITR03090 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No.1048-4/4