2N4402
PNP General Purpose Amplifier
2N4402
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 500 mA.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collector-Emitter Vo ltage 40 V
VCBO Collector-Base Voltage 40 V
VEBOEmitter-Base Voltage5.0V
ICCollector Current - Continuous600mA
TJ, T stg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
2N4402
PDTo ta l De vice Dissip at i on
Derate above 25°C625
5.0 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 °C/W
CBETO-92
2001 Fairchild Semiconductor Corporation 2N4402, Rev A
2N4402
PNP General Purpose Amplifier
(continued)
Electrical Characteristics TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Sy mb ol Pa rameter Test Condition s Min Max Un its
V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 1 00 µA, I E = 0 40 V
V(BR)EBO Em it ter - Bas e B r e akdown Voltag e IE = 100 µA, IC = 0 5.0 V
ICEX Collector Cutoff Current VCE = 3 5 V, V EB = 0.4 V 0.1 µA
IBL Ba se Cutoff Curre nt VCE = 3 5 V, V EB = 0.4 V 0.1 µA
ON CHARACTERISTICS*
hFE DC Cu rr en t G ain VCE = 1.0 V, IC = 1.0 mA
VCE = 1.0 V, IC = 1 0 mA
VCE = 2.0 V, IC = 1 50 m A
VCE = 2.0 V, IC = 5 00 m A
30
50
50
20 150
VCE(sat)Co ll ecto r-Emitter Sa t uratio n Voltag e IC = 1 50 m A, IB = 1 5 mA
IC = 5 00 m A, IB = 5 0 mA 0.40
0.75 V
V
VBE(sat)B ase-Em itt er S aturat ion Voltage IC = 1 50 m A, IB = 1 5 mA
IC = 5 00 m A, IB = 5 0 mA 0.75 0.95
1.30 V
V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacita nce VCB = 1 0 V, f = 140 kHz 8.5 pF
Cib Input Capacitance VEB = 0.5 V, f = 140 kHz 30 pF
hfe Small-Signal Current Gain IC = 20 mA, VCE = 1 0 V,
f = 100 MHz 1.5
hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 1 0 V, 30 250
hie Input Impedance f = 1.0 kHz 0.75 7.5 kΩ
hre Voltage Feedback Ratio 0.10 8.0 x10-4
hoe Ou tput Adm i ttance 1. 0 100 µmhos
SWITCHING CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
tdDelay Time VCC = 30 V, IC = 150 m A, 15 ns
trRise Time IB1 = 15 mA, VBE ( o ff ) = 2.0 V 20 ns
tsStor age T i m e VCC = 30 V, IC = 150 m A, 225 ns
tfFall Time IB1 = IB2 = 1 5 m A 30 ns
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICA L PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 4 0 °C
V = 5V
CE
Input and Output Capacitance
vs Reverse Bias V oltage
0.1 1 10 50
0
4
8
12
16
20
REV ERSE BIAS VOLTAGE (V)
CAPACIT ANCE (p F)
Cob
C
ib
C o llector -C u toff Cu r rent
vs A mb ient Temp eratu re
25 50 75 100 125
0.01
0.1
1
10
100
T - AM BIE NT TEMP ERATURE ( C)
I - C OLLECTOR CU RREN T (nA)
A
CBO
°
V = 3 5V
CB
C o ll ecto r -Emitter Satur ati o n
Vo ltag e vs C ollector Cu rrent
110100500
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR C UR RENT (mA)
V - COLLEC TOR EMITTER VOLTA GE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
B ase-Emitter Satur atio n
Vo ltag e vs C ollector Cu rrent
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CUR RE NT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 10
Base Emitter ON Vol tage vs
C o ll ector Cur rent
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTA GE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40 °C
125°C
PNP General Purpose Amplifier
(continued)
2N4402
Typical Characteristics (continued)
S witching Tim es
vs Collector Current
10 100 1000
0
50
100
150
200
250
I - CO LL ECTOR CU RRENT ( mA)
TIME ( nS)
I = I =
tr
t
s
B1
C
B2 Ic
10
V = 15 V
cc
tf
td
Tu r n On and Turn O f f Tim es
vs Col lecto r C urre n t
10 100 1000
0
100
200
300
400
500
I - COLLECTO R CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2 Ic
10
V = 15 V
cc
Po we r Dis si pat i o n vs
Am bient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMP ERATUR E ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
Ri se Time vs Coll ect or
and Turn On Base Currents
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (m A)
I - TU RN 0N BAS E CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
PNP General Purpose Amplifier
(continued)
2N4402
Typical Common Emitter Characteristics (f = 1.0kHz)
Common Emitte r Characteri st ics
12 51020 50
0.1
0.2
0.5
1
2
5
I - CO LLE C TOR CURR EN T (mA )
CHAR. RE LATIVE TO VALUES AT I = -10 m A
V = -10 V
CE
C
C
T = 25 C
A o
hoe
h re
hfe
hie
_ _ _ _ _ _
Commo n Emitte r Charact eri s t ics
-20-16-12-8-4
0.8
0.9
1
1.1
1.2
1.3
V - CO LLECTOR VOLT AGE (V)
CHAR. RELATIVE TO VALUES AT V = -10V
I = -1 0 m A
C
CE
CE
T = 25 C
A o
hoe
h an d h
re
hfe
hie
oe hfe
hie
h re
Commo n Emitter Characte ri st ics
-40-200 20406080100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIENT TEMP ERATU RE ( C)
CHAR. RE LATIVE TO VA LUES AT T = 25 C
V = -10 V
CE
A
A
hoe
h re
hfe
hie
o
o
I = -10mA
C hfe
hie
h re
hoe
PNP General Purpose Amplifier
(continued)
2N4402
Test Circuits
FIGURE 1: Saturated Turn-On Switching Time Test Circuit
FIGURE 2: Saturated T urn-Off Switching T ime T est Circuit
1.0 KΩΩ
ΩΩ
Ω
- 6.0 V
1.5 V
1.0 KΩΩ
ΩΩ
Ω
- 30 V
0
≤≤
≤≤
≤ 200ns
≤≤
≤≤
≤ 200ns
- 16 V
0
50 ΩΩ
ΩΩ
Ω
200 ΩΩ
ΩΩ
Ω
1 KΩΩ
ΩΩ
Ω37 ΩΩ
ΩΩ
Ω
50 ΩΩ
ΩΩ
Ω
- 30 V
NOTE: BVEBO = 5.0 V
PNP General Purpose Amplifier
(continued)
2N4402
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF FAIRCHILD SEMICONDUCTOR CORPORA TION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
DISCLAIMER
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NOTICE TO ANY PRODUCTS HEREIN T O IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PA TENT
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