•1D VCSEL ARRAYS
•850nm
WAVELENGTH
RANGE
•SINGLE-MODE
EMISSION
•HIGH WAVELENGTH
UNIFORMITY
•VARIOUS CONFIGURA-
TIONS AVAILABLE ON
REQUEST
•>20dB SIDE MODE
SUPPRESSION
850nm
Single-Mode
VCSEL Arrays
AP850
Features
Preliminary data-
sheet - not released
for production
125 µm
125 µm
250 µm
250 µm
250 µm
2.5 mm
500 µm
125 µm
100 µm
200 µm
500 µm
175 µm
•Ordering information
Part Number Description
APA1301020000 850nm single-
mode array 1x2
APA1301100000 850nm single-
mode array 1x10
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com
Electro-optical characteristics (for individual lasers)
Parameter Symbol Conditions Ratings Units
Min Typ Max
Threshold current Ith 2.0 2.5 3.5 mA
Threshold voltage Vth 1.8 V
Operating current Iop Pout = 0.5 mW 3 4 5 mA
Operating voltage Vop 2V
Emission wavelength* λlop = 1.5 x Ith 840 850 860 nm
Wavelength uniformity* ∆λ 2nm
Optical output power (MM) Pmax Iop = 10mA 1.5 2 4 mW
Slope efficiency ηlop = 1.5 x Ith 0.3 mW/mA
Beam divergence θFWHM 12 °
Bandwidth f3dB >3 GHz
MM = multi-mode; FWHM = full width half-maximum *Tighter wavelength specifications available on request (T=25°C)
The above specifications are subject to change
without notice
Parameter Symbol Ratings Units
Min Typ Max
Temperature tuning coefficient δλ/δT 0.06 nm/K
Threshold current variation 0 to +70°C
∆Ith 1.8 mA
Current tuning coefficient δλ/δI 0.3 nm/mA
Thermal characteristics
Parameter Symbol Rating Units
Optical output power Pmax 4mW
Peak forward current Imax 10 mA
Electrical power dissipation Ptot 30 mW/laser
Reverse voltage VR11 V
Operating temperature Top 0 to +70 °C
Storage temperature Tstg -40 to +100 °C
Absolute maximum ratings
850nm Single-
Mode VCSEL
Arrays
AP850
INVISIBLE LASER RADIATION
- AVOID DIRECT EXPOSURE
PEAK POWER : 3 mW
WAVELENGTH : 850 nm
CLASS IIIb LASER PRODUCT
(T=25°C)
