MIC28303 50V, 3A Power Module Features General Description * Easy to Use - Stable with low-Equivalent Series Resistance (ESR) ceramic output capacitor - No Inductor and No Compensation to Choose * 4.5V to 50V Input Voltage * Single-Supply Operation * Power Good (PG) Output * Low Radiated Emission (EMI) per EN55022, Class B * Adjustable Current Limit * Adjustable Output Voltage from 0.9V to 24V (Also Limited by Duty Cycle) * 200 kHz to 600 kHz, Programmable Switching Frequency * Supports Safe Start-Up into a Prebiased Output * -40C to +125C Junction Temperature Range * Available in 64-pin, 12 mm x 12 mm x 3 mm QFN Package MIC28303 is synchronous step-down regulator module, featuring a unique adaptive ON-time control architecture. The module incorporates a DC/DC controller, power MOSFETs, bootstrap diode, bootstrap capacitor and an inductor in a single package. The MIC28303 operates over an input supply range from 4.5V to 50V and can be used to supply up to 3A of output current. The output voltage is adjustable down to 0.8V with an accuracy of 1%. The device operates with programmable switching frequency from 200 kHz to 600 kHz. The MIC28303-1 uses HyperLight Load(R) architecture for improved efficiency at light loads. The MIC28303-2 uses Hyper Speed Control(R) for ultra-fast transient response. The MIC28303 offers a full suite of protection features. These include undervoltage lockout, internal soft-start, foldback current limit, "hiccup" mode short-circuit protection, and thermal shutdown. Applications * * * * * Distributed Power Systems Industrial Medical Telecom Automotive Typical Application Circuit MIC28303 12x12 QFN VIN 4.5V to 50V PVDD ANODE BSTC BSTR PVIN VIN EN C2,C3 2.2F VOUT 5V/3A EN VOUT MIC28303 R3 16.5k SW FREQ ILIM R19 75k PG C1 100F R1 10k R15 3.57k C10 0.1F C12 2.2nF C14 47F FB C6 10pF PGOOD R11 1.91k GND PGND GND 2016 Microchip Technology Inc. DS20005464A-page 1 MIC28303 Functional Block Diagram 100F 2x2.2F CIN CVIN PVDD BST DH CVDD CONTROLLER CBST LIN VOUT ILIM-ADJ DL EN N1 SW 2.2nF 16.5k COUT 0.1F 47F C10 FREQ FB FB PGOOD PGOOD VOUT 5V/3A C12 R3 FREQ PVDD R1 R15 2.7k 10k ILIM EN R19 DNP N2 SW RFREQ 100k ANODE RBST PVDD 49.9k BSTC DBST VIN VIN VIN PVIN BSTR VIN 4.5V to 50V GND PGND R11 1.91k PGND GND DS20005464A-page 2 2016 Microchip Technology Inc. MIC28303 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings PVIN, VIN to PGND ...................................................................................................................................... -0.3V to +56V PVDD, VANODE to PGND ................................................................................................................................ -0.3V to +6V VSW, VFREQ, VILIM, VEN ................................................................................................................. -0.3V to (PVIN +0.3V) VBSTC/BSTR to VSW......................................................................................................................................... -0.3V to 6V VBSTC/BSTR to PGND ..................................................................................................................................... -0.3V to 56V VFB, VPG to PGND ......................................................................................................................... -0.3V to (PVDD + 0.3V) PGND to AGND ........................................................................................................................................... -0.3V to +0.3V ESD Rating(1) ............................................................................................................................................. ESD Sensitive Operating Ratings Supply Voltage (PVIN, VIN)............................................................................................................................. 4.5V to 50V Enable Input (VEN) ..............................................................................................................................................0V to VIN VSW, VFREQ, VILIM, VEN ......................................................................................................................................0V to VIN Power Good (VPGOOD).................................................................................................................................... 0V to PVDD Notice: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. Notice: The device is not guaranteed to function outside its operating ratings. Note 1: Devices are ESD sensitive. Handling precautions are recommended. Human body model, 1.5 k in series with 100 pF. 2016 Microchip Technology Inc. DS20005464A-page 3 MIC28303 TABLE 1-1: ELECTRICAL CHARACTERISTICS Electrical Characteristics: PVIN = VIN = 12V, VOUT = 5V, VBST - VSW = 5V; TA = 25C, unless noted. Bold values indicate -40C TJ +125C. (Note 1). Parameters Min. Typ. Max. Units Conditions Input Voltage Range (PVIN, VIN) 4.5 -- 50 V Controller Supply Current -- 0.4 0.75 mA -- 2.1 3.0 -- 0.1 10 A Current into Pin 60; VEN = 0V -- 0.7 -- mA IOUT = 0A (MIC28303-1) -- 27 -- -- 4.0 -- A PVIN = VIN = 12V, VEN = 0V PVDD Output Voltage 4.8 5.2 5.4 V VIN = 7V to 50V, IPVDD = 10mA PVDD UVLO Threshold 3.8 4.2 4.7 PVDD UVLO Hysteresis -- 400 -- mV -- Load Regulation 0.6 2.0 3.6 % IPVDD = 0 to 40mA V TJ = 25C (1.0%) Power Supply Input Operating Current Shutdown Supply Current -- Current into Pin 60; VFB = 1.5V (MIC28303-1) Current into Pin 60; VFB = 1.5V (MIC28303-2) IOUT = 0A (MIC28303-2) PVDD Supply PVDD rising Reference Feedback Reference Voltage 0.792 0.8 0.808 0.784 0.8 0.816 -- 5 500 nA VFB = 0.8V EN Logic Level High 1.8 -- -- V -- EN Logic Level Low -- -- 0.6 EN Hysteresis -- 200 -- mV -- EN Bias Current -- 5 20 A VEN = 12V 400 600 750 kHz FREQ pin = open -- 300 -- -- 85 -- FB Bias Current -40C TJ 125C (2%) Enable Control -- Oscillator Switching Frequency Maximum Duty Cycle Minimum Duty Cycle RFREQ = 100 k (FREQ pin-to-GND) % -- -- 0 -- 140 200 260 ns -- -- 5 -- ms -- Current Limit Protection (VCL) -30 -14 0 mV VFB = 0.79V Short-Circuit Threshold -23 -7 9 mV VFB = 0V Minimum Off-Time VFB > 0.8V Soft-Start Soft-Start Time Short-Circuit Protection Note 1: Specification for packaged product only. DS20005464A-page 4 2016 Microchip Technology Inc. MIC28303 TABLE 1-1: ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: PVIN = VIN = 12V, VOUT = 5V, VBST - VSW = 5V; TA = 25C, unless noted. Bold values indicate -40C TJ +125C. (Note 1). Parameters Min. Typ. Max. Units Conditions Current-Limit Source Current 60 80 100 A Short-Circuit Source Current 27 36 47 -- -- 50 A Power Good Threshold Voltage 85 90 95 %VOUT Power Good Hysteresis -- 6 -- Power Good Delay Time -- 100 -- s Sweep VFB from low-to-high Power Good Low Voltage -- 70 200 mV VFB < 90% x VNOM, IPG = 1 mA Overtemperature Shutdown -- 160 -- C TJ rising Overtemperature Shutdown Hysteresis -- 4 -- Output Voltage Ripple -- 16 -- mV IOUT = 3A Line Regulation -- 0.36 -- % PVIN = VIN = 7V to 50V, IOUT = 3A Load Regulation -- 0.75 -- % IOUT = 0A to 3A PVIN= VIN =12V (MIC28303-1) -- 0.05 -- -- 400 -- -- 500 -- IOUT from 3A to 0A at 5 A/s (MIC28303-1) -- 400 -- IOUT from 0A to 3A at 5 A/s (MIC28303-2) -- 500 -- IOUT from 3A to 0A at 5 A/s (MIC28303-2) VFB = 0.79V VFB = 0V Leakage SW, BSTR Leakage Current -- Power Good Sweep VFB from low-to-high Sweep VFB from high-to-low Thermal Protection -- Output Characteristic Output Voltage Deviation from Load Step Note 1: IOUT = 0A to 3A PVIN= VIN =12V (MIC28303-2) mV IOUT from 0A to 3A at 5 A/s (MIC28303-1) Specification for packaged product only. 2016 Microchip Technology Inc. DS20005464A-page 5 MIC28303 TEMPERATURE SPECIFICATIONS Parameters Sym. Min. Typ. Max. Units Conditions Junction Operating Temperature TJ -40 -- +125 C Note 1 Temperature Ranges Storage Temperature Range TS -65 -- +150 C -- Junction Temperature TJ -- -- +150 C -- Lead Temperature -- -- -- +260 C Soldering, 10s JA -- 20 -- C/W -- JC -- 5 -- C/W -- Package Thermal Resistances Thermal Resistance 12 mm x 12 mm QFN-64LD Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation will cause the device operating junction temperature to exceed the maximum +125C rating. Sustained junction temperatures above +125C can impact the device reliability. DS20005464A-page 6 2016 Microchip Technology Inc. MIC28303 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. FIGURE 2-3: (MIC28303-2). FIGURE 2-1: Efficiency vs. Output Current (MIC28303-1). Thermal Derating FIGURE 2-2: Efficiency vs. Output Current (MIC28303-2). TABLE 2-1: VOUT RECOMMENDED COMPONENT VALUES FOR 275KHZ SWITCHING FREQUENCY VIN R3 (Rinj) R19 R15 R1 (Top Feedback Resistor) R11 (Bottom Feedback Resistor) C10 (Cinj) C12 (Cff) COUT 5V 7V to 18V 16.5 k 75 k 3.57 k 10 k 1.9 k 0.1 F 2.2 nF 2 x 47 F/6.3V 5V 18V to 50V 39.2 k 75 k 3.57 k 10 k 1.9 k 0.1 F 2.2 nF 2 x 47 F/6.3V 3.3V 5V to 18V 16.5 k 75 k 3.57 k 10 k 3.24 k 0.1 F 2.2 nF 2 x 47 F/6.3V 3.3V 18V to 50V 39.2 k 75 k 3.57 k 10 k 3.24 k 0.1 F 2.2 nF 2 x 47 F/6.3V 2016 Microchip Technology Inc. DS20005464A-page 7 MIC28303 FIGURE 2-4: VIN Operating Supply vs. Input Voltage (MIC28303-1). FIGURE 2-7: VIN Operating Supply Current vs. Temperature (MIC28303-1). FIGURE 2-5: Output Regulation vs. Input Voltage (MIC28303-1). FIGURE 2-8: Load Regulation vs. Temperature (MIC28303-1). FIGURE 2-6: Output Voltage vs. Input Voltage (MIC28303-1). FIGURE 2-9: Line Regulation vs. Temperature (MIC28303-1). DS20005464A-page 8 2016 Microchip Technology Inc. MIC28303 . FIGURE 2-10: Line Regulation vs. Temperature (MIC28303-1). FIGURE 2-13: FIGURE 2-11: Line Regulation vs. Output Current (MIC28303-1). FIGURE 2-14: Efficiency vs. Output Current (MIC28303-1). FIGURE 2-12: Efficiency (VIN = 12V) vs. Output Current (MIC28303-1). FIGURE 2-15: VIN Operating Supply Current vs. Input Voltage (MIC28303-2). 2016 Microchip Technology Inc. Efficiency (VIN = 24V) vs. Output Current (MIC28303-1). DS20005464A-page 9 MIC28303 FIGURE 2-16: Output Regulation vs. Input Voltage (MIC28303-2). FIGURE 2-19: Input Voltage. ENABLE THRESHOLD (V) 1.50 Switching Frequency vs. Rising 1.20 Falling 0.90 0.60 Hyst 0.30 0.00 10 15 20 25 30 35 40 45 50 55 60 65 70 75 INPUT VOLTAGE (V) FIGURE 2-17: Input Voltage. VIN Shutdown Current vs. FIGURE 2-20: Voltage. Enable Threshold vs. Input FIGURE 2-18: vs. Input Voltage. Output Peak Current Limit FIGURE 2-21: Temperature. VIN Shutdown Current vs. DS20005464A-page 10 2016 Microchip Technology Inc. MIC28303 FIGURE 2-22: vs. Temperature. Output Peak Current Limit FIGURE 2-25: VIN Operating Supply Current vs. Temperature (MIC28303-2). FIGURE 2-23: Temperature. EN Bias Current vs. FIGURE 2-26: Load Regulation vs. Temperature (MIC28303-2). FIGURE 2-24: Temperature. Enable Threshold vs. FIGURE 2-27: Line Regulation vs. Temperature (MIC28303-2). 2016 Microchip Technology Inc. DS20005464A-page 11 MIC28303 FIGURE 2-28: Line Regulation vs. Temperature (MIC28303-2). FIGURE 2-31: Efficiency (VIN = 12V) vs. Output Current (MIC28303-2). FIGURE 2-29: Switching Frequency vs. Temperature (MIC28303-2). FIGURE 2-32: Efficiency (VIN = 24V) vs. Output Current (MIC28303-2). FIGURE 2-30: Line Regulation vs. Output Current (MIC28303-2). FIGURE 2-33: Efficiency (VIN = 38V) vs. Output Current (MIC28303-2). DS20005464A-page 12 2016 Microchip Technology Inc. MIC28303 FIGURE 2-34: Switching Frequency. FIGURE 2-37: (MIC28303-2). Thermal Derating FIGURE 2-35: (MIC28303-2). Thermal Derating FIGURE 2-38: (MIC28303-2) Thermal Derating FIGURE 2-36: (MIC28303-2). Thermal Derating 2016 Microchip Technology Inc. DS20005464A-page 13 MIC28303 T. TABLE 2-2: RECOMMENDED COMPONENT VALUES FOR 600 KHZ SWITCHING FREQUENCY R1 R11 (Top (Bottom Feedback Feedback Resistor) Resistor) VOUT VIN R3 (Rinj) R19 C10 (Cinj) C12 (Cff) 0.9V 5V to 50V 16.5 k 10 k 80.6 k DNP 0.1 F 2.2 nF 47 F/6.3V or 2 x 22 F 1.2V 5V to 50V 16.5 k 10 k 20 k DNP 0.1 F 2.2 nF 47 F/6.3V or 2 x 22 F 1.8V 5V to 50V 16.5 k 10 k 8.06 k DNP 0.1 F 2.2 nF 47 F/6.3V or 2 x 22 F 2.5V 5V to 50V 16.5 k 10 k 4.75 k DNP 0.1 F 2.2 nF 47 F/6.3V or 2 x 22 F 3.3V 5V to 50V 16.5 k 10 k 3.24 k DNP 0.1 F 2.2 nF 47 F/6.3V or 2 x 22 F 5V 7V to 50V 16.5 k 10 k 1.9 k DNP 0.1 F 2.2 nF 47 F/6.3V or 2 x 22 F 12V 18V to 50V 23.2 k 10 k 715 k DNP 0.1 F 2.2 nF 47 F/16V or 2 x 22 F VEN (2V/div) VIN (10V/div) VIN = 12V VOUT = 5V IOUT = 3A VOUT (2V/div) VSW (10V/div) VOUT (2V/div) Time (4.0ms/div) Enable Turn-On Delay and FIGURE 2-41: MIC28303-2 VIN Start-Up with Pre-Biased Output. VIN (10V/div) VEN (2V/div) VIN = 12V VOUT = 5V IOUT = 3A VOUT (2V/div) VOUT (2V/div) VSW (10V/div) VSW (10V/div) Time (1.0ms/div) FIGURE 2-40: Fall Time. DS20005464A-page 14 VIN = 12V VOUT = 5V IOUT = 0A VPRE-BIAS = 1.5V VSW (10V/div) Time (2.0ms/div) FIGURE 2-39: Rise Time. COUT Enable Turn-Off Delay and VIN = 12V VOUT = 5V IOUT = 0A VPRE-BIAS = 1.5V Time (4.0ms/div) FIGURE 2-42: MIC28303-1 VIN Start-Up with Pre-Biased Output. 2016 Microchip Technology Inc. MIC28303 VEN (2V/div) VIN = 12V VOUT = 5V IOUT = SHORT VIN (10V/div) VIN = 12V VOUT = 5V IOUT = 3A VOUT (20mV/div) VOUT (2V/div) VSW (10V/div) VSW (10V/div) Time (10ms/div) FIGURE 2-43: Time (2.0ms/div) Enable Turn-On/Turn-Off. FIGURE 2-46: Power-Up into Short-Circuit. VEN (2V/div) VEN (1V/div) VIN = 12V VOUT = 5V IOUT = SHORT VOUT (20mV/div) VIN = 12V VOUT = 5V IOUT = 3A VOUT (2V/div) VSW (10V/div) Time (10ms/div) FIGURE 2-44: Time (400s/div) Enable Thresholds. VOUT = 3.3V IOUT = 1.0A FIGURE 2-47: Enabled into Short. VOUT (5V/div) VIN = 12V VOUT = 5V VIN (1V/div) VOUT (2V/div) IOUT (5A/div) Time (20ms/div) FIGURE 2-45: UVLO Thresholds. 2016 Microchip Technology Inc. Time (40ms/div) FIGURE 2-48: Threshold. Output Peak Current-Limit DS20005464A-page 15 MIC28303 VIN = 12V VOUT = 5V VOUT (AC-COUPLED) (100mV/div) VOUT (2V/div) VIN = 12V VOUT = 5V IOUT = 10mA TO 500mA IOUT (5A/div) IOUT (500mA/div) Time (100s/div) Time (100s/div) FIGURE 2-49: Short Circuit. FIGURE 2-52: Response. MIC28303-2 Transient FIGURE 2-53: Response. MIC28303-2 Transient VIN = 12V VOUT = 5V IOUT = 1A VOUT (2V/div) VSW (10V/div) Time (2.0ms/div) FIGURE 2-50: Output Recovery from Thermal Shutdown. VOUT (AC-COUPLED) (20mV/div) VIN = 12V VOUT = 5V IOUT = 3A VSW (10V/div) VOUT (AC-COUPLED) (100mV/div) VIN = 12V VOUT = 5V IOUT = 10mA TO 500mA IOUT (500mA/div) Time (1.0s/div) FIGURE 2-51: MIC28303-2 Switching Waveforms (IOUT = 3A). DS20005464A-page 16 Time (100s/div) FIGURE 2-54: Response. MIC28303-1 Transient 2016 Microchip Technology Inc. MIC28303 VOUT (AC-COUPLED) (200mV/div) VOUT (AC-COUPLED) (500mV/div) VIN = 12V VOUT = 5V IOUT = 500mA TO 2A IOUT (1A/div) VIN = 12V VOUT = 5V IOUT = 1A TO 3A IOUT (2A/div) Time (100s/div) FIGURE 2-55: Response. MIC28303-2 Transient VOUT (AC-COUPLED) (200mV/div) Time (100s/div) FIGURE 2-58: Response. VIN (10V/div) VIN = 12V VOUT = 5V IOUT = 500mA TO 2A IOUT (1A/div) VIN = 12V VOUT = 5V IOUT = 0A VOUT (5V/div) VPG (5V/div) Time (2.0ms/div) Time (100s/div) FIGURE 2-56: Response. MIC28303-1 Transient MIC28303-1 Transient VOUT (AC-COUPLED) (500mV/div) FIGURE 2-59: Turn-On. Power Good at VIN Soft VIN (10V/div) VIN = 12V VOUT = 5V IOUT = 1A TO 3A VIN = 12V VOUT = 5V IOUT = 0A VOUT (5V/div) IOUT (2A/div) VPG (5V/div) Time (100s/div) FIGURE 2-57: Response. MIC28303-2 Transient 2016 Microchip Technology Inc. Time (20ms/div) FIGURE 2-60: Turn-Off. Power Good at VIN Soft DS20005464A-page 17 MIC28303 FIGURE 2-61: Radiated Emissions - 30 MHz to 1000 MHz (VIN = 12V/IOUT = 2A). FIGURE 2-62: Radiated Emissions - 30 MHz to 1000 MHz (VIN = 36V/IOUT = 2A). FIGURE 2-63: Radiated Emissions - 30 MHz to 1000 MHz (VIN = 12V/IOUT = 3A). DS20005464A-page 18 2016 Microchip Technology Inc. MIC28303 3.0 PIN DESCRIPTIONS Package Type BSTC SW BSTR 56 51 FB 57 BSTC PGOOD 58 53 EN 59 52 VIN 60 BSTR PVDD 61 GND PVDD 62 54 NC 63 55 GND 64 MIC28303 64-Pin 12 mm x 12 mm QFN (MP) 39 NC PGND 13 38 VOUT PVIN 14 37 VOUT PVIN 15 36 VOUT PVIN 16 35 VOUT PVIN 17 34 VOUT PVIN 18 33 VOUT 32 12 VOUT SW PGND 31 40 30 11 VOUT SW PGND VOUT 41 29 10 VOUT SW PGND 28 42 VOUT 9 27 SW PGND VOUT 43 26 8 VOUT SW FREQ 25 44 VOUT 7 24 SW FREQ VOUT 45 23 6 VOUT SW SW 22 46 PVIN 5 21 SW VIN PVIN SW 47 20 48 4 GND ILIM 19 3 2 PVIN ANODE ANODE 1 GND PVIN 49 GND 50 The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin Number Symbol Description 1, 2, 3, 54, 64 GND Analog Ground. Ground for internal controller and feedback resistor network. The analog ground return path should be separate from the power ground (PGND) return path. 4 ILIM Current Limit Setting. Connect a resistor from SW (Pin 6) to ILIM to set the overcurrent threshold for the converter. 5, 60 VIN Supply Voltage for Controller. The VIN operating voltage range is from 4.5V to 50V. A 0.47 F ceramic capacitor from VIN (pin 60) to GND is required for decoupling. Pin 5 should be externally connected to either PVIN or Pin 60 on PCB. 6, 40 to 48, 51 SW Switch Node and Current-Sense Input. High current output driver return. The SW pin connects directly to the switch node. Due to the high-speed switching on this pin, the SW pin should be routed away from sensitive nodes. The SW pin also senses the current by monitoring the voltage across the low-side MOSFET during OFF time. 7, 8 FREQ Switching Frequency Adjust Input. Leaving this pin open will set the switching frequency to 600 kHz. Alternatively, a resistor from this pin to ground can be used to lower the switching frequency. 9 to 13 PGND Power Ground. PGND is the return path for the buck converter power stage. The PGND pin connects to the sources of low-side N-Channel external MOSFET, the negative terminals of input capacitors, and the negative terminals of output capacitors. The return path for the power ground should be as small as possible and separate from the analog ground (GND) return path. 14 to 22 PVIN Power Input Voltage. Connection to the drain of the internal high-side power MOSFET. 23 to 38 VOUT Output Voltage. Connection with the internal inductor, the output capacitor should be connected from this pin to PGND as close to the module as possible. 39 NC 2016 Microchip Technology Inc. No Connection. Leave it floating. DS20005464A-page 19 MIC28303 TABLE 3-1: PIN FUNCTION TABLE (CONTINUED) Pin Number Symbol 49, 50 ANODE 52, 53 BSTC Bootstrap Capacitor. Connection to the internal bootstrap capacitor. Leave floating, no connect. 55, 56 BSTR Bootstrap Resistor. Connection to the internal bootstrap resistor and high-side power MOSFET drive circuitry. Leave floating, no connect. 57 FB 58 PGOOD 59 EN Enable Input. A logic signal to enable or disable the buck converter operation. The EN pin is CMOS compatible. Logic high enables the device, logic low shuts down the regulator. In the disable mode, the input supply current for the device is minimized to 4 A typically. Do not pull EN to PVDD. 61, 62 PVDD Internal +5V Linear Regulator Output. PVDD is the internal supply bus for the device. In the applications with VIN < +5.5V, PVDD should be tied to VIN to bypass the linear regulator. 63 NC DS20005464A-page 20 Description Anode Bootstrap Diode Input. Anode connection of internal bootstrap diode. This pin should be connected to the PVDD pin. Feedback Input. Input to the transconductance amplifier of the control loop. The FB pin is regulated to 0.8V. A resistor divider connecting the feedback to the output is used to set the desired output voltage. Power Good Output. Open-drain output. An external pull-up resistor to external power rails is required. No Connection. Leave it floating. 2016 Microchip Technology Inc. MIC28303 4.0 FUNCTIONAL DESCRIPTION The MIC28303 is an adaptive on-time synchronous buck regulator module built for high-input voltage to low-output voltage conversion applications. The MIC28303 is designed to operate over a wide input voltage range, from 4.5V to 50V, and the output is adjustable with an external resistor divider. An adaptive on-time control scheme is employed to obtain a constant switching frequency and to simplify the control compensation. Hiccup mode over-current protection is implemented by sensing low-side MOSFET's RDS(ON). The device features internal soft-start, enable, UVLO, and thermal shutdown. The module has integrated switching FETs, inductor, bootstrap diode, resistor and capacitor. 4.1 Theory of Operation Per the Functional Diagram of the MIC28303 module, the output voltage is sensed by the MIC28303 feedback pin FB via the voltage divider R1 and R11, and compared to a 0.8V reference voltage VREF at the error comparator through a low-gain transconductance (gm) amplifier. If the feedback voltage decreases and the amplifier output is below 0.8V, then the error comparator will trigger the control logic and generate an ON-time period. The ON-time period length is predetermined by the "Fixed tON Estimator" circuitry: EQUATION 4-1: V OUT t ON ESTIMATED = ---------------------V IN f SW Where: VOUT Output Voltage VIN Power Stage Input Voltage fSW Switching Frequency At the end of the ON-time period, the internal high-side driver turns off the high-side MOSFET and the low-side driver turns on the low-side MOSFET. The OFF-time period length depends upon the feedback voltage in most cases. When the feedback voltage decreases and the output of the gm amplifier is below 0.8V, the ON-time period is triggered and the OFF-time period ends. If the OFF-time period determined by the feedback voltage is less than the minimum OFF-time tOFF(MIN), which is about 200 ns, the MIC28303 control logic will apply the tOFF(MIN) instead. tOFF(MIN) is required to maintain enough energy in the boost capacitor (CBST) to drive the high-side MOSFET. The maximum duty cycle is obtained from the 200 ns tOFF(MIN): 2016 Microchip Technology Inc. EQUATION 4-2: Where: t S - t OFF MIN D MAX = ---------------------------------- = 1 - 200ns --------------tS tS 1/fSW tS It is not recommended to use MIC28303 with an OFF-time close to tOFF(MIN) during steady-state operation. The adaptive ON-time control scheme results in a constant switching frequency in the MIC28303. The actual ON-time and resulting switching frequency will vary with the different rising and falling times of the external MOSFETs. Also, the minimum tON results in a lower switching frequency in high VIN to VOUT applications. During load transients, the switching frequency is changed due to the varying OFF-time. To illustrate the control loop operation, both the steady-state and load transient scenarios were analyzed. For easy analysis, the gain of the gm amplifier is assumed to be 1. With this assumption, the inverting input of the error comparator is the same as the feedback voltage. Figure 4-1 shows the MIC28303 control loop timing during steady-state operation. During steady-state, the gm amplifier senses the feedback voltage ripple, which is proportional to the output voltage ripple plus injected voltage ripple, to trigger the ON-time period. The ON-time is predetermined by the tON estimator. The termination of the OFF-time is controlled by the feedback voltage. At the valley of the feedback voltage ripple, which occurs when VFB falls below VREF, the OFF period ends and the next ON-time period is triggered through the control logic circuitry. IL IL(PP) IOUT VOUT VOUT(PP) = ESRCOUT x IL(PP) VFB VFB(PP) = VOUT(PP) x VREF R2 R1+R2 TRIGGER ON-TIME IF VFB IS BELOW VREF DH ESTIMATED ON-TIME FIGURE 4-1: Timing MIC28303 Control Loop Figure 4-2 shows the operation of the MIC28303 during a load transient. The output voltage drops due to the sudden load increase, which causes the VFB to be less than VREF. This will cause the error comparator to trigger an ON-time period. At the end of the ON-time period, a minimum OFF-time tOFF(MIN) is generated to DS20005464A-page 21 MIC28303 charge the bootstrap capacitor (CBST) because the feedback voltage is still below VREF. Then, the next ON-time period is triggered due to the low feedback voltage. Therefore, the switching frequency changes during the load transient, but returns to the nominal fixed frequency once the output has stabilized at the new load current level. With the varying duty cycle and switching frequency, the output recovery time is fast and the output voltage deviation is small. FULL LOAD IOUT NO LOAD VOUT VREF VFB DH TOFF(min) FIGURE 4-2: Response MIC28303 Load Transient Unlike true current-mode control, the MIC28303 uses the output voltage ripple to trigger an ON-time period. The output voltage ripple is proportional to the inductor current ripple if the ESR of the output capacitor is large enough. In order to meet the stability requirements, the MIC28303 feedback voltage ripple should be in phase with the inductor current ripple and are large enough to be sensed by the gm amplifier and the error comparator. The recommended feedback voltage ripple is 20 mV ~ 100 mV over the full input voltage range. If a low ESR output capacitor is selected, then the feedback voltage ripple may be too small to be sensed by the gm amplifier and the error comparator. Also, the output voltage ripple and the feedback voltage ripple are not necessarily in phase with the inductor current ripple if the ESR of the output capacitor is very low. In these cases, ripple injection is required to ensure proper operation. Please refer to "Section 5.6, Ripple Injection" for more details about the ripple injection technique. 4.2 Discontinuous Mode (MIC28303-1 Only) In continuous mode, the inductor current is always greater than zero; however, at light loads, the MIC28303-1 is able to force the inductor current to operate in discontinuous mode. Discontinuous mode is where the inductor current falls to zero, as indicated by trace (IL) shown in Figure 4-3. During this period, the efficiency is optimized by shutting down all the non-essential circuits and minimizing the supply current. The MIC28303-1 wakes up and turns on the high-side MOSFET when the feedback voltage VFB drops below 0.8V. The MIC28303-1 has a zero crossing comparator (ZC) that monitors the inductor current by sensing the voltage drop across the low-side MOSFET during its ON-time. If the VFB > 0.8V and the inductor current goes slightly negative, then the MIC28303-1 automatically powers down most of the IC's circuitry and goes into a low-power mode. Once the MIC28303-1 goes into discontinuous mode, both DL and DH are low, which turns off the high-side and low-side MOSFETs. The load current is supplied by the output capacitors and VOUT drops. If the drop of VOUT causes VFB to go below VREF, then all the circuits will wake up into normal continuous mode. First, the bias currents of most circuits reduced during the discontinuous mode are restored, and then a tON pulse is triggered before the drivers are turned on to avoid any possible glitches. Finally, the high-side driver is turned on. Figure 4-3 shows the control loop timing in discontinuous mode. IL CROSSES 0 and VFB > 0.8 DISCONTINUOUS MODE STARTS VFB < 0.8. WAKE UP FROM DISCONTINUOUS MODE DH DL ESTIMATED ON-TIME FIGURE 4-3: MIC28303-1 Control Loop Timing (Discontinuous Mode) DS20005464A-page 22 2016 Microchip Technology Inc. MIC28303 During discontinuous mode, the bias current of most circuits is substantially reduced. As a result, the total power supply current during discontinuous mode is only about 400 A, allowing the MIC28303-1 to achieve high efficiency in light load applications. 4.3 Soft-Start Soft-start reduces the input power supply surge current at startup by controlling the output voltage rise time. The input surge appears while the output capacitor is charged up. A slower output rise time will draw a lower input surge current. The MIC28303 implements an internal digital soft-start by making the 0.8V reference voltage VREF ramp from 0 to 100% in about 5 ms with 9.7 mV steps. Therefore, the output voltage is controlled to increase slowly by a stair-case VFB ramp. Once the soft-start cycle ends, the related circuitry is disabled to reduce current consumption. PVDD must be powered up at the same time or after VIN to make the soft-start function correctly. 4.4 Current Limit The MIC28303 uses the RDS(ON) of the low side MOSFET and external resistor connected from ILIM pin to SW node to decide the current limit. The VCL drop allows programming of short limit through the value of the resistor (R15), If the absolute value of the voltage drop on the bottom FET is greater than VCL. In that case the V(ILIM) is lower than PGND and a short circuit event is triggered. A hiccup cycle to treat the short event is generated. The hiccup sequence including the soft start reduces the stress on the switching FETs and protects the load and supply for severe short conditions. The short-circuit current limit can be programmed by using Equation 4-3. EQUATION 4-3: I CLIM - I L PP 0.5 R DS ON + V CL R15 = ---------------------------------------------------------------------------------------------------I CL Where: ICLIM Desired Current Limit RDS(ON) On-Resistance of Low-Side Power MOSFET, 57 m Typically VCL Current-Limit Threshold (Typical Absolute Value is 14 mV per Table 1-1) ICL Current-Limit Source Current (Typical Value is 80 A, per Table 1-1) IL(PP) Inductor Current Peak-to-Peak. Because the inductor is integrated, use Equation 4-4 to calculate the peak-to-peak inductor ripple current. MIC28303 VIN EQUATION 4-4: VIN BST 2.2F x3 V OUT V IN MAX - V OUT I L PP = ------------------------------------------------------------------V IN MAX f SW L SW SW CS R15 ILIM C6 FB PGND FIGURE 4-4: Current-Limiting Circuit In each switching cycle of the MIC28303, the inductor current is sensed by monitoring the low-side MOSFET in the OFF period. The sensed voltage V(ILIM) is compared with the power ground (PGND) after a blanking time of 150 ns. In this way the drop voltage over the resistor R15 (VCL) is compared with the drop over the bottom FET generating the short current limit. The small capacitor (C6) connected from the ILIM pin to PGND filters the switching node ringing during the off-time allowing a better short limit measurement. The time constant created by R15 and C6 should be much less than the minimum off time. 2016 Microchip Technology Inc. The MIC28303 has 4.7 H inductor integrated into the module. The typical value of RWINDING(DCR) of this particular inductor is in the range of 45 m. In case of hard short, the short limit is folded down to allow an indefinite hard short on the output without any destructive effect. It is mandatory to make sure that the inductor current used to charge the output capacitance during soft start is under the folded short limit; otherwise the supply will go in hiccup mode and may not be finishing the soft start successfully. The MOSFET RDS(ON) varies 30% to 40% with temperature; therefore, it is recommended to add a 50% margin to ICLIM in Equation 4-3 to avoid false current limiting due to increased MOSFET junction temperature rise. Table 4-1 shows typical output current limit value for a given R15 with C6 = 10 pF. TABLE 4-1: TYPICAL OUTPUT CURRENT-LIMIT VALUES R15 Typical Output Current-Limit 1.81 k 3A 2.7 k 6.3A DS20005464A-page 23 MIC28303 5.0 APPLICATION INFORMATION 5.1 Simplified Input Transient Circuitry EQUATION 5-1: R19 f SW ADJ = f O --------------------------------R19 + 100k Where: The 56V absolute maximum rating of the MIC28303 allows simplifying the transient voltage suppressor on the input supply side which is very common in industrial applications. The input supply voltage VIN (Figure 5-1) may be operating at 12V input rail most of the time, but can encounter noise spike of 50V for a short duration. By using MIC28303, which has 56V absolute maximum voltage rating, the input transient suppressor is not needed. This saves on component count, form factor, and ultimately the system becomes less expensive. Switching Frequency When R19 is Open fO For more precise setting, it is recommended to use Figure 5-3: 50V 12V VIN FIGURE 5-1: Circuitry. 5.2 MIC28303 MODULE VOUT Simplified Input Transient Setting the Switching Frequency The MIC28303 switching frequency can be adjusted by changing the value of resistor R19. The top resistor of 100 k is internal to module and is connected between VIN and FREQ pin, so the value of R19 sets the switching frequency. The switching frequency also depends upon VIN, VOUT, and load conditions. MIC28303 BST VIN VIN 2.2F x3 RFREQ FREQ 100k R19 SW CS FB PGND FIGURE 5-2: Adjustment. Switching Frequency FIGURE 5-3: R19 5.3 Switching Frequency vs. Output Capacitor Selection The type of the output capacitor is usually determined by the application and its equivalent series resistance (ESR). Voltage and RMS current capability are two other important factors for selecting the output capacitor. Recommended capacitor types are MLCC, tantalum, low-ESR aluminum electrolytic, OS-CON and POSCAP. The output capacitor's ESR is usually the main cause of the output ripple. The MIC28303 requires ripple injection and the output capacitor ESR effects the control loop from a stability point of view. The maximum value of ESR is calculated as in Equation 5-2: EQUATION 5-2: ESR C Equation 5-1 gives the estimated switching frequency: OUT V OUT PP --------------------------I L PP Where: DS20005464A-page 24 VOUT(PP) Peak-to-Peak Output Voltage Ripple IL(PP) Peak-to-Peak Inductor Current Ripple 2016 Microchip Technology Inc. MIC28303 The total output ripple is a combination of the ESR and output capacitance. The total ripple is calculated in Equation 5-3: de-rating. The input voltage ripple will primarily depend on the input capacitor's ESR. The peak input current is equal to the peak inductor current, so: EQUATION 5-3: EQUATION 5-6: V IN = I L pk ESR CIN V OUT PP = 2 I L PP 2 ------------------------------------- C OUT f SW 8 + I L PP ESR C OUT Where: D Duty Cycle COUT Output Capacitance Value fSW Switching Frequency As described in Section 4.1, Theory of Operation, the MIC28303 requires at least 20 mV peak-to-peak ripple at the FB pin to make the gm amplifier and the error comparator behave properly. Also, the output voltage ripple should be in phase with the inductor current. Therefore, the output voltage ripple caused by the output capacitors value should be much smaller than the ripple caused by the output capacitor ESR. If low-ESR capacitors, such as ceramic capacitors, are selected as the output capacitors, a ripple injection method should be applied to provide enough feedback voltage ripple. Please refer to Section 5.6, Ripple Injection for more details. The voltage rating of the capacitor should be twice the output voltage for a tantalum and 20% greater for aluminum electrolytic or OS-CON. The output capacitor RMS current is calculated in Equation 5-4: The input capacitor must be rated for the input current ripple. The RMS value of input capacitor current is determined at the maximum output current. Assuming the peak-to-peak inductor current ripple is low: EQUATION 5-7: I CIN RMS I OUT MAX D 1 - D The power dissipated in the input capacitor is: EQUATION 5-8: 2 P DISS CIN = I CIN RMS ESR CIN The general rule is to pick the capacitor with a ripple current rating equal to or greater than the calculated worst (VIN_MAX) case RMS capacitor current. Its voltage rating should be 20% to 50% higher than the maximum input voltage. Typically the input ripple (dV) needs to be kept down to less than 10% of input voltage. The ESR also increases the input ripple. Equation 5-9 should be used to calculate the input capacitor. Also it is recommended to keep some margin on the calculated value: EQUATION 5-9: I OUT MAX 1 - D C IN --------------------------------------------------f SW dV EQUATION 5-4: IC OUT RMS I L PP = ----------------12 Where: The power dissipated in the output capacitor is: dV Input Ripple fSW Switching Frequency EQUATION 5-5: P DISS C 5.4 OUT = IC 2 OUT RMS ESR C OUT Input Capacitor Selection The input capacitor for the power stage input PVIN should be selected for ripple current rating and voltage rating. Tantalum input capacitors may fail when subjected to high inrush currents, caused by turning the input supply on. A tantalum input capacitor's voltage rating should be at least two times the maximum input voltage to maximize reliability. Aluminum electrolytic, OS-CON, and multilayer polymer film capacitors can handle the higher inrush currents without voltage 2016 Microchip Technology Inc. DS20005464A-page 25 MIC28303 5.5 Output Voltage Setting Components The MIC28303 requires two resistors to set the output voltage, as shown in Figure 5-4: injection method is applied for low output voltage ripple applications. Table 2-2 summarizes the ripple injection component values for ceramic output capacitor. The applications are divided into three situations according to the amount of the feedback voltage ripple: * Enough ripple at the feedback voltage due to the large ESR of the output capacitors (Figure 5-5): R1 VOUT FB gm Amp R11 MIC28303 R1 COUT FB R11 ESR VREF FIGURE 5-5: Enough Ripple at FB. As shown in Figure 5-6, the converter is stable without any ripple injection. FIGURE 5-4: Configuration. Voltage-Divider VOUT The output voltage is determined by Equation 5-10: MIC28303 EQUATION 5-10: R1 FB Cff R11 R1- V OUT = V FB 1 + -------- R11 COUT ESR Where: VFB 0.8V A typical value of R1 used on the standard evaluation board is 10 k. If R1 is too large, it may allow noise to be introduced into the voltage feedback loop. If R1 is too small in value, it will decrease the efficiency of the power supply, especially at light loads. Once R1 is selected, R11 can be calculated using Equation 5-11: EQUATION 5-11: V FB R1 R11 = ----------------------------V OUT - V FB 5.6 Ripple Injection The VFB ripple required for proper operation of the MIC28303 gm amplifier and error comparator is 20 mV to 100 mV. However, the output voltage ripple is generally designed as 1% to 2% of the output voltage. For a low output voltage, such as a 1V, the output voltage ripple is only 10 mV to 20 mV, and the feedback voltage ripple is less than 20 mV. If the feedback voltage ripple is so small that the gm amplifier and error comparator cannot sense it, then the MIC28303 will lose control and the output voltage is not regulated. In order to have some amount of VFB ripple, a ripple DS20005464A-page 26 FIGURE 5-6: Inadequate Ripple at FB. The feedback voltage ripple is: EQUATION 5-12: R11 V FB PP = ----------------------- ESR C I L PP OUT R1 + R11 Where: IL(PP) Peak-to-Peak Value of the Inductor Current Ripple * Inadequate ripple at the feedback voltage due to the small ESR of the output capacitors, such is the case with ceramic output capacitor. The output voltage ripple is fed into the FB pin through a feed-forward capacitor, Cff in this situation, as shown in Figure 5-7. The typical Cff value is between 1 nF and 100 nF. 2016 Microchip Technology Inc. MIC28303 1. VOUT SW MIC28303 Cinj Rinj R1 Cff COUT FB R11 FIGURE 5-7: ESR Invisible Ripple at FB. 2. EQUATION 5-17: With the feed-forward capacitor, the feedback voltage ripple is very close to the output voltage ripple. f SW V FB PP K div = ----------------------- ---------------------------V IN D 1 - D Then the value of Rinj is obtained as: EQUATION 5-13: V FB PP ESR I L PP EQUATION 5-18: 1 - - 1 R inj = R1 R11 --------K div * Virtually no ripple at the FB pin voltage due to the very-low ESR of the output capacitors. In this situation, the output voltage ripple is less than 20 mV. Therefore, additional ripple is injected into the FB pin from the switching node SW via a resistor Rinj and a capacitor Cinj, as shown in Figure 5-7. The injected ripple is: EQUATION 5-14: V FB PP Select Cff to feed all output ripples into the feedback pin and make sure the large time constant assumption is satisfied. Typical choice of Cff is 1 nF to 100 nF if R1 and R11 are in the k range. Select Rinj according to the expected feedback voltage ripple using Equation 5-17: 3. Table 2-2 summarizes the typical value of components for particular input and output voltage, and 600 kHz switching frequency design. 5.7 1 = V IN K div D 1 - D ----------------f SW EQUATION 5-15: R1 R11 K div = ------------------------------------R inj + R1 R11 Where: VIN Power Stage Input Voltage D Duty Cycle fSW Switching Frequency (R1||R11||Rinj) x Cff In Equation 5-14 and Equation 5-15, it is assumed that the time constant associated with Cff must be much greater than the switching period: EQUATION 5-16: 1 - = T ------------------ 1 f SW If the voltage divider resistors R1 and R11 are in the k range, then a Cff of 1 nF to 100 nF can easily satisfy the large time constant requirements. Also, a 100 nF injection capacitor Cinj is used in order to be considered as short for a wide range of the frequencies. The process of sizing the ripple injection resistor and capacitors is: 2016 Microchip Technology Inc. Select Cinj as 100 nF, which could be considered as short for a wide range of the frequencies. Thermal Measurements and Safe Operating Area Measuring the IC's case temperature is recommended to ensure it is within its operating limits. Although this might seem like a very elementary task, it is easy to get erroneous results. The most common mistake is to use the standard thermal couple that comes with a thermal meter. This thermal couple wire gauge is large, typically 22 gauge, and behaves like a heat sink, resulting in a lower case measurement. Two methods of temperature measurement use a smaller thermal couple wire or an infrared thermometer. If a thermal couple wire is used, it must be constructed of 36 gauge wire or higher (smaller wire size) to minimize the wire heat-sinking effect. In addition, the thermal couple tip must be covered in either thermal grease or thermal glue to make sure that the thermal couple junction makes good contact with the case of the IC. Omega brand thermal couple (5SC-TT-K-36-36) is adequate for most applications. Wherever possible, an infrared thermometer is recommended. The measurement spot size of most infrared thermometers is too large for an accurate reading on small form factor ICs. However, an IR thermometer from Optris has a 1 mm spot size, which makes it a good choice for measuring the hottest point on the case. An optional stand makes it easy to hold the beam on the IC for long periods of time. DS20005464A-page 27 MIC28303 The safe operating area (SOA) of the MIC28303 is shown in the first three graphs of the Typical Characteristics section. These thermal measurements were taken on the MIC28303 evaluation board. Because the MIC28303 is an entire system comprised of switching regulator controller, MOSFETs and inductor, the part needs to be considered a system. The SOA curves will provide guidance for reasonable use of the MIC28303. 5.8 Emission Characteristics of MIC28303 The MIC28303 integrates switching components in a single package, so the MIC28303 has reduced emission compared to a standard buck regulator with external MOSFETS and inductors. The radiated EMI scans for MIC28303 are shown in Section 2.0, Typical Performance Curves. The limit on the graph is per EN55022 Class B standard. DS20005464A-page 28 2016 Microchip Technology Inc. MIC28303 6.0 PCB LAYOUT GUIDELINES To minimize EMI and output noise, follow these layout recommendations. PCB layout is critical to achieve reliable, stable and efficient performance. A ground plane is required to control EMI and minimize the inductance in power, signal and return paths. The following figures optimized from small form factor point of view show top and bottom layers of a four-layer PCB. It is recommended to use mid layer 1 as a continuous ground plane. The following guidelines should be followed to ensure proper operation of the MIC28303 converter: 6.1 6.3 RC Snubber * Place the RC snubber on the same side of the board and as close to the SW pin as possible. IC * The analog ground pin (GND) must be connected directly to the ground planes. Do not route the GND pin to the PGND pin on the top layer. * Place the IC close to the point-of-load (POL). * Use fat traces to route the input and output power lines. * Analog and power grounds should be kept separate and connected at only one location. 6.2 * Do not replace the ceramic input capacitor with any other type of capacitor. Any type of capacitor can be placed in parallel with the input capacitor. * If a Tantalum input capacitor is placed in parallel with the input capacitor, it must be recommended for switching regulator applications and the operating voltage must be derated by 50%. * In "Hot-Plug" applications, a Tantalum or Electrolytic bypass capacitor must be used to limit the over-voltage spike seen on the input supply with power is suddenly applied. Input Capacitor * Place the input capacitors on the same side of the board and as close to the IC as possible. * Place several vias to the ground plane close to the input capacitor ground terminal. * Use either X7R or X5R dielectric input capacitors. Do not use Y5V or Z5U type capacitors. FIGURE 6-1: 6.4 SW Node * Do not route any digital lines underneath or close to the SW node. * Keep the switch node (SW) away from the feedback (FB) pin. 6.5 Output Capacitor * Use a wide trace to connect the output capacitor ground terminal to the input capacitor ground terminal. * Phase margin will change as the output capacitor value and ESR changes. * The feedback trace should be separate from the power trace and connected as close as possible to the output capacitor. Sensing a long high-current load trace can degrade the DC load regulation. Top and Bottom Layer of a Four-Layer Board. 2016 Microchip Technology Inc. DS20005464A-page 29 MIC28303 7.0 PACKAGING INFORMATION 64-Lead H3QFN 12 mm x 12 mm Package Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging DS20005464A-page 30 2016 Microchip Technology Inc. MIC28303 Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2016 Microchip Technology Inc. DS20005464A-page 31 MIC28303 DS20005464A-page 32 2016 Microchip Technology Inc. MIC28303 APPENDIX A: REVISION HISTORY Revision A (June 2016) * Converted Micrel document MIC28303 to Microchip data sheet DS2005464A. * Minor text changes throughout. 2015 Microchip Technology Inc. DS2005464A-page 33 MIC28303 NOTES: DS2005464A-page 34 2015 Microchip Technology Inc. MIC28303 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, contact your local Microchip representative or sales office. PART NO. -X X XX Examples: a) MIC28303-1YMP: b) MIC28303-2YMP: Device Features Temperature Package Device: MIC28303: Features: 1 2 = = Temperature: Y = Package: MP = 50V, 3A Power Module HyperLight Load Hyper Speed Control 50V 3A Power Module, HyperLight Load, -40C to +125C junction temperature range, 64LD QFN 50V 3A Power Module, Hyper Speed Control, -40C to +125C junction temperature range, 64LD QFN -40C to +125C 64-Pin 12 mm x 12 mm QFN 2015 Microchip Technology Inc. DS20005464A-page 35 MIC28303 NOTES: DS20005464A-page 36 2015 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: * Microchip products meet the specification contained in their particular Microchip Data Sheet. * Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. * There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip's Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. * Microchip is willing to work with the customer who is concerned about the integrity of their code. * Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as "unbreakable." Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip's code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. 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Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company's quality system processes and procedures are for its PIC(R) MCUs and dsPIC(R) DSCs, KEELOQ(R) code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip's quality system for the design and manufacture of development systems is ISO 9001:2000 certified. QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2016 Microchip Technology Inc. Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries. GestIC is a registered trademarks of Microchip Technology Germany II GmbH & Co. KG, a subsidiary of Microchip Technology Inc., in other countries. All other trademarks mentioned herein are property of their respective companies. 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