Data Sheet 1 of 10 Rev. 03, 2007-11-19
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA210601E
PTFA210601F
Description
The PTFA210601E and PTFA210601F are 60-watt LDMOS FETs
designed for single- and two-carrier WCDMA power amplifier
applications in the 2110 to 2170 MHz band. Features include input
and output matching, and thermally-enhanced packages with slotted
or earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFA210601E
Package H-36265-2
Thermally-Enhanced High Power RF LDMOS FETs
60 W, 2110 – 2170 MHz
2-Carrier WCDMA Drive-up
VDD = 28 V, IDQ
= 550 mA, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
31 33 35 37 39 41 43
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR
Efficiency
IM3
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 12 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 15.0 16.0 —dB
Drain Efficiency ηD26.0 27.0 —%
Intermodulation Distortion IMD —–38 –37 dBc
PTFA210601F
Package H-37265-2
Features
•Thermally-enhanced packages, Pb-free and
RoHS-compliant
•Broadband internal matching
•Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 12 W
- Linear Gain = 16 dB
- Efficiency = 27.0%
- Intermodulation distortion = –38 dBc
- Adjacent channel power = –44 dBc
•Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 68 W
- Efficiency = 58.5%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 10:1 VSWR @ 28 V,
60 W (CW) output power
*See Infineon distributor for future availability.
PTFA210601E
PTFA210601F
Data Sheet 2 of 10 Rev. 03, 2007-11-19
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 550 mA, POUT = 60 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —16 —dB
Drain Efficiency ηD—42 —%
Intermodulation Distortion IMD —–28 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.15 —Ω
Operating Gate Voltage VDS = 28 V, IDQ = 550 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD196 W
Above 25°C derate by 1.12 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 60 W CW) RθJC 0.89 °C/W
Ordering Information
Type and Version Package Type Package Description Marking
PTFA210601E V4 H-36265-2 Thermally-enhanced slotted flange, single-ended PTFA210601E
PTFA210601F V4 H-37265-2 Thermally-enhanced earless flange, single-ended PTFA210601F
*See Infineon distributor for future availability.
PTFA210601E
PTFA210601F
Data Sheet 3 of 10 Rev. 03, 2007-11-19
Broadband Performance
VDD = 28 V, IDQ = 550 mA, POUT = 41 dBm
10
15
20
25
30
35
40
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return Loss
2-Tone Drive-up
VDD = 28 V, IDQ = 550 mA,
f = 2140 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
35 37 39 41 43 45 47 49
Output Power, PEP (dBm)
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
IM5
Efficiency
IM7
IM3
Intermodulation Distortion (dBc)
Typical Performance (data taken in a production test fixture)
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 550 mA, f = 2170 MHz
12
13
14
15
16
17
010 20 30 40 50 60 70
Output Power (W)
Gain (dB)
15
25
35
45
55
65
Drain Efficiency (%)
Gain
Efficiency
TCASE = 25°C
TCASE = 90°C
Two-carrier WCDMA at Selected Biases
VDD = 28 V, f = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
-55
-50
-45
-40
-35
-30
31 33 35 37 39 41 43
Output Power, PEP (dBm)
3rd Order IMD (dBc)
550 mA
600 mA
500 mA
450 mA
650 mA
PTFA210601E
PTFA210601F
Data Sheet 4 of 10 Rev. 03, 2007-11-19
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 28 V, IDQ = 550 mA, f = 2140 MHz,
POUT = 47.8 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd Order
5th
7th
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.56 A
1.11 A
1.67 A
2.22 A
2.78 A
3.33 A
3.89 A
4.44 A
5.00 A
IM3, Drain Efficiency and Gain
vs. Supply Voltage
IDQ = 550 mA, f = 2140 MHz, POUT
(PEP) = 47.8 dBm,
tone spacing = 1 MHz
-45
-40
-35
-30
-25
-20
-15
-10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
3rd Order Intermodulation
Distortion (dBc)
10
15
20
25
30
35
40
45
50
55
Gain (dB), Drain Efficiency (%)
Gain
Efficiency
IM3 Up
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 550 mA, f = 2140 MHz,
P/A R = 8.5 dB, 3.84 MHz BW
-55
-50
-45
-40
-35
-30
-25
32 34 36 38 40 42 44
Average Output Power (dBm)
5
10
15
20
25
30
35
Drain Efficiency (%)
ACPR Up
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR Low
Typical Performance (cont.)
PTFA210601E
PTFA210601F
Data Sheet 5 of 10 Rev. 03, 2007-11-19
Broadband Circuit Impedance
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
2070 10.29 –5.79 4.91 1.57
2110 9.46 –6.02 4.83 1.75
2140 8.79 –5.95 4.85 2.12
2170 8.14 –5.91 4.76 2.38
2210 7.19 –5.72 4.66 2.55
0.1
0.3
0.2
0.4
0.1
0.2
0.1
0
.2
-
W
A
V
E
L
E
N
G
T
H
S T
O
W
AR
D
G
E
NE
R
AT
O
R
--->
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
2210 MHz
2070 MHz
2070 MHz
Z Load
Z Source
2210 MHz
Z0 = 50 Ω
See next page for reference circuit information
PTFA210601E
PTFA210601F
Data Sheet 6 of 10 Rev. 03, 2007-11-19
a210601ef_sch
R3
2KVR4
2KV
C3
0.001µF
C2
0.001µF
BCP56
R2
1.3K VR1
1.2K V
LM7805
C1
0.001µF
QQ1
Q1
R5
10 V
10pF
1.5pF
10pF .02µF
l1
l6
R9
DUT
C11 C12
C10
.1µF
C6
.1µF
C5
10µF
35V
C4 .01µF
C7
R8
1KV
10pF
C8
C9
10 V
R6
1KV
R7
1KV
l2l3l5l9l11
l7
l10
l4l8
10pF
0.7pF
22µF1µF
C13 C16
C17
C18
50V
.1µF
C15C14
1µF
l12 l13
VDD
VDD
RF_IN RF_OUT
Reference Circuit
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT PTFA210601E or PTFA210601F LDMOS Transistor
PCB 0.76 mm [.030"] thick, εr = 3.48 Rogers 4350 1 oz. copper
Microstrip Electrical Characteristics at 2140 MHz1Dimensions: L x W (mm) Dimensions: L x W (in.)
l10.030 λ, 50.0 Ω2.54 x 1.52 0.100 x 0.060
l20.038 λ, 50.0 Ω3.15 x 1.52 0.124 x 0.060
l30.146 λ, 50.0 Ω12.32 x 1.52 0.485 x 0.060
l40.049 λ, 6.2 Ω3.81 x 22.78 0.150 x 0.897
l50.016 λ, 6.2 Ω1.17 x 22.78 0.046 x 0.897
l60.009 λ, 80.0 Ω0.74 x 0.69 0.029 x 0.027
l70.112 λ, 80.0 Ω9.78 x 0.69 0.385 x 0.027
l80.018 λ, 8.5 Ω1.35 x 16.26 0.053 x 0.640
l90.105 λ, 8.5 Ω8.08 x 16.26 0.318 x 0.640
l10 0.173 λ, 67.0 Ω14.83 x 1.02 0.584 x 0.040
l11 0.051 λ, 41.0 Ω4.11 x 2.29 0.162 x 0.090
l12 0.077 λ, 41.0 Ω6.35 x 2.29 0.250 x 0.090
l13 0.032 λ, 50.0 Ω2.79 x 1.52 0.110 x 0.060
1Electrical characteristics are rounded.
PTFA210601E
PTFA210601F
Data Sheet 7 of 10 Rev. 03, 2007-11-19
Reference circuit assembly diagram (not to scale)*
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4 Tantalum capacitor, 10 µF, 35 V Digi-Key PCS6106TR-ND
C5, C6, C15 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C7 Capacitor, 0.01 µF ATC 100B 103
C8, C9, C11, C18 Ceramic capacitor, 10 pF ATC 100B 100
C10 Ceramic capacitor, 1.5 pF ATC 100B 1R5
C12 Capacitor, 0.02 µF ATC 200B 203
C13, C14 Capacitor, 1.0 µF Digi-Key 445-1411-1-ND
C16 Electrolytic capacitor, 22 µF, 50 VDigi-Key PCE3374CT-ND
C17 Ceramic capacitor, 0.7 pF ATC 100B 0R7
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor, 1.2k ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor, 1.3k ohms Digi-Key P1.3KGCT-ND
R3 Chip resistor, 2k ohms Digi-Key P2KECT-ND
R4 Potentiometer, 2k ohms Digi-Key 3224W-202ETR-ND
R5, R9 Chip resistor, 10 ohms Digi-Key P10ECT-ND
R6, R7, R8 Chip resistor, 1k ohms Digi-Key P1KECT-ND
*Gerber Files for this circuit available on request
a2 1060 1ef_assy
R4
Q1
QQ1
C3
C1
R1
C2
R2
R5
R3
C4
C5
C6
C7 C8
C9 C10 C17 C18
C12
C11
C14
C13
C16
C15
R7
R6
R8 R9
LM
10
35V
+
2 2
HHD
4V6
Q1
VDD
RF_IN RF_OUT
PTFA210601E
PTFA210601F
Data Sheet 8 of 10 Rev. 03, 2007-11-19
Package Outline Specifications
Package H-36265-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
20.31
[.800]
10.16±0.25
[.400±.010]
FLANGE 9.78
[.385]
2x 7.11
[.280]
2X 7.11
[.280]
15.23
[.600]
4X R1.52
[R.060]
C
L
C
L
(45° X 2.03
[.080])
S
D
G
LID 10.16±0.25
[.400±.010]
0.0381 [.0015] -A-
3.56±0.38
[.140±.015
1.02
[.040]
SPH 1.57
[.062]
2007-11-16_h-36+37265_POs.vsd_h-36265-2
2X R1.60
[R.063]
15.34±0.51
[.604±.020]
2.59±0.51
[.102±.020]
PTFA210601E
PTFA210601F
Data Sheet 9 of 10 Rev. 03, 2007-11-19
Package Outline Specifications (cont.)
Package H-37265-2
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
071119_h-36+37265_POs_h-37265-2
(45° X 2.03
[.080])
2.59±0.51
[.102±.020]
S
D
G
LID 10.16±0.25
[.400±.010]
FLANGE 10.16
[.400]
2X 7.11
[.280]
LID
10.16±0.25
[.400±.010]
10.16
[.400]
1.02
[.040]
3.56±.38
[.140±.015]
SPH 1.57
[.062]
10.16
[.400]
15.34±.51
[.604±.020]
FLANGE
4X R0.63
[R.025] MAX
|0.025 [.001]|-A-
C
L
C
L
Data Sheet 10 of 10 Rev. 03, 2007-11-19
PTFA210601E/F
Confidential, Limited Internal Distribution
Revision History: 2007-11-19 Data Sheet
Previous Version: 2007-03-02, Data Sheet
Page Subjects (major changes since last revision)
1, 2, 8, 9 Update to product V4, with new package technologies. Update package outline diagrams.
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2007-11-19
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2005.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
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